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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
MAX3318CDBR Texas Instruments 2.5-V 460-Kbps RS-232 Transceiver With +/-15 KV ESD Protection 20-SSOP 0 to 70 visit Texas Instruments Buy
MAX3318EIDBG4 Texas Instruments 2.5-V 460-KBPS RS-232 Transceiver with IEC 61000-4-2 ESD-Protection 20-SSOP -40 to 85 visit Texas Instruments
TRS3318CDBRG4 Texas Instruments 2.5-V 460-kbps RS-232 Transceiver With +/-15-kV ESD Protection 20-SSOP 0 to 70 visit Texas Instruments

PK MUR 460 DIODE

Catalog Datasheet MFG & Type PDF Document Tags

U840 diode motorola

Abstract: motorola u860 diode SWITCHMODE Power Rectifier OR'ing Function Diode . . . . . . . . . . 125 25 Amp, 35 Volt SWITCHMODE Power , SUFFIX (DUAL DESIGNATOR) PREFIX KEY MUR MBR MR MSR SUFFIX KEY CT = CENTER TAP (DUAL) TO , ULTRASOFT MUR ULTRAFAST EXAMPLE: MBR SCHOTTKY 30 20 WT 30 AMP 200 V CENTER TAP
ON Semiconductor
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PK MUR 460

Abstract: pk mur460 a large area metal­to­silicon power diode. State­of­the­art geometry features epitaxial construction , IFSM 80 A ORDERING INFORMATION Device TJ, Tstg ­65 to +150 °C MBR340 MBR340P TJ(pk) 150 °C , RESISTIVE LOAD I PK +p (CAPACITIVE LOAD) I AV I PK + 5.0 I AV 10 TJ = 150°C dc 500 400 300 C, CAPACITANCE , H = MEGAHERTZ M = POWERMITE P = POWERTAP (X10 EXCEPT SCHOTTKY) PREFIX KEY MUR MBR MR MSR , WT = CENTER TAP (DUAL) TO­247 MUR ULTRAFAST EXAMPLE: EXAMPLE: 30 30 AMP 20 200 V WT
ON Semiconductor
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PK MUR 460 pk mur460 gi756 diode PK MUR460 1110 carrier 30bq015 0525 Transient Voltage Suppressors UTR30 UTR31 UTR32 UTR3305 UTR3310 UTR3320

transistor U1620R

Abstract: fast recovery diode ses5001 Total Device Peak Repetitive Surge Current (Rated VR, Square Wave, Per Diode 20 kHz, TC = 140 , ) 0.1 0.05 0.01 ZJC(t) = r(t) RJC t1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T1 TJ(pk) - TC = P(pk) ZJC(t) 50 100 200 500 1000 P(pk) t2 DUTY CYCLE, D = t1/t2 0.05 0.1 0.2 0.5 1.0 2.0 , EXCEPT SCHOTTKY) PREFIX KEY MUR MBR MR MSR = = = = ULTRA FAST RECTIFIER (SCHOTTKY) BARRIER , , D2PAK PT = CENTER TAP (DUAL) TO­218 PACKAGE WT = CENTER TAP (DUAL) TO­247 MUR ULTRAFAST EXAMPLE
ON Semiconductor
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transistor U1620R fast recovery diode ses5001 PK MUR 460 DIODE MUR1620CT equivalent transistor mbr4045pt 1N2069 MUR1620CTR MUR1620CT U1620R UTR3340 UTR3350 UTR3360

MUR480E

Abstract: stpr16 0.05 0.02 0.01 0.01 0.02 D = 0.5 0.1 0.05 0.01 SINGLE PULSE P(pk) t2 Duty Cycle, D = t1/t2TJ(pk) - TC = P(pk) ZJC(t) t1 ZJC(t) = r(t) RJC D curves apply for power pulse train shown read , = POWERMITE P = POWERTAP (X10 EXCEPT SCHOTTKY) PREFIX KEY MUR MBR MR MSR = = = = , TAP (DUAL) TO­247 MUR ULTRAFAST EXAMPLE: EXAMPLE: 30 30 AMP 20 200 V WT CENTER TAP , Cathode = Polarity Band CASE 194-04 Plastic Cathode indicated b di by diode d symbol b l CASE
ON Semiconductor
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MBR1545CT MUR480E stpr16 340L-02 SS33 SMB A14F diode STPS2045 MURB1620CT U1620T UTR40 UTR41 UTR42 UTR4305

b2545 transistor

Abstract: TO220 MUR460 Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 130°C) Non­Repetitive Peak Surge Current per Diode Leg , CHARACTERISTICS (Per Diode Leg) Characteristic Maximum Thermal Resistance, Junction to Case Symbol RJC MBR2535CT 1.5 MBR2545CT 1.5 Unit °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous , 28 24 20 16 12 8.0 4.0 0 0 4.0 I (RESISTIVELOAD) PK + p I SQUARE WAVE AV I (CAPACITATIVELOAD) PK + 5.0 I dc AV 10 20 TJ = 125°C 8.0 12 16 20 24 28 32 36 40
ON Semiconductor
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b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode B2535 B2545 220AB UTR4310 UTR4320 UTR4340

NIKKO NR 9600

Abstract: Triac bt 808 600cw  SEMiCON INDEX O' i i< I § VOLUME 2 INTERNATIONAL DIODE and THYRISTOR INDEX 17th Edition , DICKSON ELECTRONICS CORPORATION* DIX ABB-IXYS SEMICONDUCTOR GmbH IXY DIODE TRANSISTOR I NC. DIT ABB , Division AEI CMI, INC.* GENERAL DIODE CORP. GED COLLMER SEMICONDUCTOR INC. COL GE / GENERAL ELECTRIC , INTERNATIONAL COMPONENTS CORPORATION INC INTERNATIONAL DIODE CORPORATION IND INTERNATIONAL RECTIFIER CORP. IRG , MS TRANSISTOR CORP.* MULLARD PHI MURATA ELECTRONICS MUR MURATA ERIE N. AMERICA I NC. ETO M/A-COM
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OCR Scan
NIKKO NR 9600 Triac bt 808 600cw GDS C25/0 BT135 2U12 sony KSM 213 DCP

Transistor MTH8N45

Abstract: PK MUR 460 is offset by two diode drops (1.4 V) and divided by three before it connects to the inverting input , voltage at Pin 5, 12 where: V ­ 1.4 V (Pin 5, 12) I pk 3 R S Abnormal operating conditions occur when the , current is: 0.5 V I pk(max) R S When designing a high power switching regulator it may be desirable to , 20 k The external diode clamp is required if the negative Sync current is greater than ­5.0 mA , ) R2 6 RS I pk(max) [ V Clamp R S Where: 0 VClamp 0.5 V 3­460
ON Semiconductor
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Transistor MTH8N45 MPS 0715 MTH8N45 EA2 SOT23 2N50 MC34065 MC33065

equivalent components of diode 1N5399

Abstract: 6A10 BL diode features: · Dual Diode Construction - Terminals 1 and 3 May Be Connected · 45 Volt Blocking Voltage · , Average Rectified Forward Current (Rated VR, TC = 125°C) Per Diode Per Device Peak Repetitive Forward Current, (Rated VR, Square Wave, Per Diode 20 kHz, TC = 90°C) Non­Repetitive Peak Surge Current (Surge , MARKING DIAGRAM B6045 IFSM 500 A IRRM Tstg TJ TJ(pk) dv/dt 2.0 ­65 to +175 ­65 to +150 175 10,000 , Publication Order Number: MBR6045WT/D MBR6045WT THERMAL CHARACTERISTICS (Per Diode) Rating Thermal
ON Semiconductor
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equivalent components of diode 1N5399 6A10 BL diode diode ses5001 FE8D fe8b diode equivalent for fr302 diode UTR4350 UTR4360 UTR50 UTR51 UTR52 UTR60

MR2835S equivalent

Abstract: 1n5404 diode features: · Dual Diode Construction - Terminals 1 and 3 May Be Connected · 45 Volt Blocking Voltage · , Average Rectified Forward Current (Rated VR, TC = 125°C) Per Diode Per Device Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz @ TC = 90°C) Per Diode Non­Repetitive Peak Surge Current (Surge , MARKING DIAGRAM IFSM 500 A B6045 IRRM Tstg TJ TJ(pk) dv/dt 2.0 ­65 to +175 ­65 to +150 , = POWERMITE P = POWERTAP (X10 EXCEPT SCHOTTKY) PREFIX KEY MUR MBR MR MSR = = = =
ON Semiconductor
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MR2835S equivalent 1n5404 diode fep6dt 1N5401 equivalent MUR860 equivalent STPS2045CT MBR6045PT UTR61 UTR62 UTX105 UTX110 UTX120

MPS 0715

Abstract: a20 tssop-8 is offset by two diode drops (1.4 V) and divided by three before it connects to the inverting input , external diode clamp is required if the negative Sync current is greater than ­5.0 mA. Dmax Drive Output , speed. Schottky diode D1 is required if circuit ringing drives the output pin below ground. Figure 23 , 26. Isolated MOSFET Drive VCC 16 Vin Isolation Boundary Q1 D1 ­ + RS I pk The totem­pole , + L4 0.01 MUR 440 100 L2 MPS + A20 68k 3.3k TL 43A 0.01 51k 100 1.3k RTN + 100V 1.0A 1/2 4N35 10 +
ON Semiconductor
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MC33065-H a20 tssop-8 Amp. mosfet 800 watt MC34065-H

triac zd 607

Abstract: 1n5204 (BR)CES t D Suffix on this device signifies internal C-E Diode 3 3 3 3 3 3 3 2.5 2.5 3
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OCR Scan
triac zd 607 1n5204 CA2820 TRW 2N6823 BF845 bf506 SG73/D

0608, motherboard 845 GV ML

Abstract: 240V AC/TRANSFORMER bck 2801 accurate substitution when used with the diode D.A.T.A. Book. 81F3803.43.00
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0608, motherboard 845 GV ML 240V AC/TRANSFORMER bck 2801 D64dS ABB inverter motor fault code vlt 2900 ABB inverter motor fault code ACS 401

stk 412 -420

Abstract: Ignitron BK 496 Philadelphia Cooper Pkwy.; East Bldg. Airport Hwy.; North Pk. Dr. Pennsauken, NJ 08109 PAâ'"(215) 925-9988 NJâ , 2.77 3.38 4.04 4.60 15 1.36 1.81 2.04 2.41 2.91 3.56 4.26 4.86 16 1.40 1.88 2.12 2.51 3.04 3.73 4.48 , '" MC676L Mur 3.63 â'" MC676P MOT 2.75j â'" MC677L MOT 1.80 â'" MC677P MOT 1.35 â'" MC678L MOT 1.80 â
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OCR Scan
stk 412 -420 Ignitron BK 496 CD4004AE STK 419 150 STK 419 140 STK 412 150 equivalent 2G700 9799-G 018C1

12v dc power supply with sg3526

Abstract: MAC97A6 630 -57 CHAPTER 8 AN-934B The HEXFETs Integral Body Diode â'" Its Characteristics and L im ita tio n , . F-l (Includes SCRs, Rectifiers, Schottkys, Power Modules, Diode Bridges, Semiconductor Fuses , V â'¢TRANSISTOR" CURRENT DIODE CURRENT Figure 1. Basic Structure of a HEXFET Power MOSFET , it; through the MOSFET when it is switched on. and through the clamping diode when the MOSFET is switched off. It is also assumed that stray circuit in­ ductance between the clamping diode and the
ON Semiconductor
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12v dc power supply with sg3526 MAC97A6 630 tl494 inverter 12v 230v LM7580 design smps 500 watt TL494 MRC 433 mosfet SGJ388/D T2800D TCA0372 TIP102 TIP107 TIP112

intel 845 MOTHERBOARD pcb CIRCUIT diagram

Abstract: 200D6 SMD DIP-8 DIODE TRANSISTOR INC. DIT DIODES INC. Dll DIOTEC ELECTRONICS CORP. DIO DIOTEC ELEKTRONISCHE , GEC PLESSEY SEMICONDUCTORS Power Division AEI GENERAL DIODE CORP. GED GE / GENERAL ELECTRIC (USA , INTERFET INF INTERNATIONAL COMPONENTS CORPORATION INC INTERNATIONAL DIODE CORPORATION IND INTERNATIONAL , MUR MU RATA ERIE N. AMERICA INC. ETO M/A-COM SEMICONDUCTOR PRODUCTS M/A N NAN YA TECHNOLOGY NAY , OPTO DIODE CORP. OPD OSHINO LAMPS LTD. OSH OXLEY DEVELOPMENTS Co.Ltd. OXL o Have BS9000/CECC
ON Semiconductor
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intel 845 MOTHERBOARD pcb CIRCUIT diagram 200D6 SMD DIP-8 marking code E5 SMD ic sot23-5 4256 bwp TRANSISTOR SMD 6CW TL494 car charger schematic diagram DL128/D DL128

mps2112

Abstract: UC3842 smps design with TL431 The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The Transistor and Diode , TRANSISTOR QUALITY AND RELIABILITY INFORMATION DIODE PRODUCT SPECTRUM DIODE SELECTION GUIDES DIODE INTERCHANGEABILITY DIODE DATA SHEETS SENSISTORS® TI Worldwide Sales Offices ALABAMA: Huntayille, 4717 University Dr , . Texas Instruments INCORPORATED The Transistor and Diode Data Book for Design Engineers First Edition , DIODE DATA BOOK Since 1954, when Texas Instruments introduced the first silicon transistor to the
ON Semiconductor
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mps2112 UC3842 smps design with TL431 dc motor speed control tl494 MPS2111 TRANSISTOR MPS2112 ic equivalent book ncp1203 SG388/D SG388
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