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Part Manufacturer Description Datasheet BUY
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

PJ-019 diode

Catalog Datasheet MFG & Type PDF Document Tags

PJ-019 diode

Abstract: pj 59 diode Transistor Thermal - Rth a-o Resistance Diode MIN. TYP. MAX. UNIT - - ±10 - - 1.0 mA - V 1200 - 3.0 , 0.25 0.5 - YsV v- V /¿a - - - 0.19 °C/W 0.5 1997 03-03 2/5 - TOSHIBA
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OCR Scan

650x

Abstract: marking PJ 019 options Diode to VPP allows efficient power recovery This device consists of a 32-bit shift register , VOC HV output clamp diode voltage - -1.5 V IOL = -100mA VOH HV output when , .060 REF b b1 D D1 E E1 .017 .026 .685 .630 .685 .630 .019
Supertex
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Abstract: HV5408B 32-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs Features Processed with HVCMOS® technology Low power level shifting SOURCE/SINK current minimum 20mA Shift register speed 8.0MHz Latched data outputs CMOS compatible inputs Forward and reverse shifting options Diode to , leakage, any input HV output clamp diode voltage HV output when sourcing HV output when sinking HV output , .090 .100 .120 A2 .060 REF b .017 .019 .021 b1 .026 .029 .032 D .685 .690 .695 D1 .630 Supertex
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MS-018 DSPD-44PLCCPJ E041309 DSFP-HV5408B A081109

pj 44 diode

Abstract: shifting options Diode to VPP allows efficient power recovery ® General Description The HV5408B is a , output voltage Current leakage, any input Current leakage, any input HV output clamp diode voltage HV , A1 .090 .100 .120 A2 .060 REF b .017 .019 .021 b1 .026 .029 .032 D .685 .690 .695 D1
Supertex
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pj 44 diode F031111 A042811
Abstract: HV5308B 32-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs Features Processed with HVCMOS® technology Low power level shifting Source/sink current minimum 20mA Shift register speed 8.0MHz Latched data outputs CMOS compatible inputs Forward and reverse shifting options Diode to , output clamp diode voltage HV output when sourcing HV output when sinking HV output when sourcing HV , .090 .100 .120 A2 .060 REF b .017 .019 .021 b1 .026 .029 .032 D .685 .690 .695 D1 .630 Supertex
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DSFP-HV5308B A073009

hv5308pj-b

Abstract: options Diode to VPP allows efficient power recovery Th HV5308B consists of a 32-bit shift register , IIL Current leakage, any input - -1.0 µA VIN = 0 VOC HV output clamp diode , .685 .630 .019 .029 .690 .650 .690 .650 .021 .032 .695 .665 .695
Supertex
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hv5308pj-b A092309

HV5408B

Abstract: options Diode to VPP allows efficient power recovery The HV5408B consists of a 32-bit shift register , leakage, any input - -1.0 µA VIN = 0 VOC HV output clamp diode voltage - -1.5 V , .060 REF b b1 D D1 E E1 .017 .026 .685 .630 .685 .630 .019
Supertex
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Abstract: shifting options Diode to VPP allows efficient power recovery HV5308B General Description The , output voltage Current leakage, any input Current leakage, any input HV output clamp diode voltage HV , A1 .090 .100 .120 A2 .060 REF b .017 .019 .021 b1 .026 .029 .032 D .685 .690 .695 D1 Supertex
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C042811

marking PJ 019

Abstract: PJ-019 diode options Diode to VPP allows efficient power recovery This device consists of a 32-bit shift register , VOC HV output clamp diode voltage - -1.5 V IOL = -100mA VOH HV output when , .060 REF b b1 D D1 E E1 .017 .026 .685 .630 .685 .630 .019
Supertex
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marking PJ 019 PJ-019 diode high voltage diodes 125OC D092408 A092508

pj 1189 diode

Abstract: PJ 63 MM diode /dt Peak Diode Recovery dv/dt ® -4.5 V/ns Tj, Tstg Junction and Storage Temperature Range -55 to , Conditions Is Continuous Source Current (Body Diode) â'" â'" -5.1 A MOSFET symbol _iD showing the A I IN integral reverse gjJ pJ/ p-n junction diode. "Is Ism Pulsed Source Current (Body Diode) © â'" - -20 VsD Diode Forward Voltage â'" â'" -5.5 V Tj=25°C, ls=-5.1 A, Vgs=0V ® trr Reverse Recovery Time â'" 80 160 ns Tj=25°C, If=-6.7A di/dt=100A/ns ® Qrr Reverse Recovery Charge â'" ¡0.096 I 0.19 nc
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IRFR9014 pj 1189 diode PJ 63 MM diode PJ 63 diode cd 1191 cb LS51A AN-994 IRFU9014 1RFR9014

pj 54 diode

Abstract: pj 69 diode . Ambient Temperature VIN = 12 V 300 0.22 max 0.21 0.20 0.19 Current Limiter Turn-Off , ) with low on-resistance. Use an inductor with low DC resistance. Use a Schottky barrier diode (SBD , SYNC pin of the HA16114/120. · Diode D prevents reverse current. Always insert a diode here. Use a general-purpose switching diode. · Resistors R1 and R2 form a voltage divider to ensure that the input voltage , transistor can turn off quickly. · R 3: Load resistor for transistor Q. Zener diode for protecting the
Hitachi Semiconductor
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pj 54 diode pj 69 diode pj 83 diode CODE PJ pj 5d diode pwm circuits 1990 HA16114P/PJ/FP/FPJ HA16120FP/FPJ HA16114P/FP/FPJ HA16120 HA16114 D-85622

HA16666

Abstract: ZENER DIODES DZ 6.28 0.19 Current Limiter Turn-Off Time vs. Ambient Temperature Note · HA16114 300 ns max 250 , inductor with low DC resistance. Use a Schottky barrier diode (SBD) with low VF. Use a low-ESR capacitor , the circuit from the secondary side of the transformer to the SYNC pin of the HA16114/120. · Diode D prevents reverse current. Always insert a diode here. Use a general-purpose switching diode. · Resistors , transistor can turn off quickly. · R3: Load resistor for transistor Q. Zener diode for protecting the SYNC
Hitachi Semiconductor
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HA16666 ZENER DIODES DZ 6.28 Circuit switch control unity HA16116 HA17451 functional diagram ic TM 1628 D-85619

pj 899 diode

Abstract: ZVN2110 SEMICONDUCTORS 15D ]> â  ^70570 DDDSbSS 3 â  ZETB '- ' 95tT U DO DO L. ZVN2110 SOURCE-DRAIN DIODE CHARACTERISTICS -T-". ^ Parameter Typ. Unit Conditions Vsd Diode forward voltage (1) 0.82 V VGS=0V, ls = 0.32A , 0.83 I 0.19 0.21 4.85 5.35 J 0.17 0.19 4.32 4.82 K 0.045 0.055 1.14 1.4 L 0.245 0.265 6.23 6.73 M
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ZVN2110A ZVN2110B ZVN2110L pj 899 diode cr 6848 pj 899 g162 T-37- G-155

pj 929 diode

Abstract: 0.19 Current Limiter Turn-Off Time vs. Ambient Temperature Note â'¢ HA16114 300 ns max 250 , diode (SBD) with low VF. Use a low-ESR capacitor designed for switching power supplies. 8 5D 1
Renesas Electronics
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pj 929 diode

pj 929 diode

Abstract: 28 pin ic TM 1628 (°C) 0.21 0.20 0.19 Current Limiter Turn-Off Time vs. Ambient Temperature Note · HA16114 , low on-resistance. Use an inductor with low DC resistance. Use a Schottky barrier diode (SBD) with , SYNC pin of the HA16114/120. · Diode D prevents reverse current. Always insert a diode here. Use a general-purpose switching diode. · Resistors R1 and R2 form a voltage divider to ensure that the input voltage , transistor Q. Zener diode for protecting the SYNC pin. · ZD: Rev.2.0, Sep.18.2003, page 34 of 37
Renesas Technology
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28 pin ic TM 1628 2SJ214 buck-boost chopper npn vdb sawtooth wave generator through transformer 1S2076A REJ03F0055-0200Z ADE-204-020A

pj 929 diode

Abstract: functional diagram ic TM 1628 (°C) 0.21 0.20 0.19 Current Limiter Turn-Off Time vs. Ambient Temperature Note · HA16114 , low on-resistance. Use an inductor with low DC resistance. Use a Schottky barrier diode (SBD) with , SYNC pin of the HA16114/120. · Diode D prevents reverse current. Always insert a diode here. Use a general-purpose switching diode. · Resistors R1 and R2 form
Renesas Technology
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ha1745 HRP24 HA1611 ha16114fp TRANSISTOR PJ 2010 chopper transformer

28 pin ic TM 1628

Abstract: pj 89 diode . Ambient Temperature VIN = 12 V 300 0.22 max 0.21 0.20 0.19 Current Limiter Turn-Off , resistance. Use a Schottky barrier diode (SBD) with low VF. Use a low-ESR capacitor designed for switching , secondary side of the transformer to the SYNC pin of the HA16114/120. · Diode D prevents reverse current. Always insert a diode here. Use a general-purpose switching diode. · Resistors R1 and R2 form a voltage , for transistor Q. Zener diode for protecting the SYNC pin. · ZD: 34 HA16114P/PJ/FP/FPJ
Hitachi Semiconductor
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pj 89 diode TM 1628 IC SOP chopper transformer winding Nippon capacitors transistor 2SC458 DSA003633

HV3922C

Abstract: HV3922 HV3922 High Voltage PIN Diode Driver Features General Description The HV3922 is a monolithic, high voltage quad-output driver that is designed to be used in conjunction with the Supertex VN2222NC, a separate N-channel DMOS FET quad array, whose device characteristics are briefly described below. Together, these devices perform a 220V pushpull function that is especially , .485 .430 .019 .029 .490 .450 .490 .450 .021 .032 .495 .465 .495
Supertex
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HV3922C HV3922DJ DSPD-28PLCCPJ A092408 DSFP-HV3922 A100109
Abstract: HV3922 High Voltage PIN Diode Driver Features Processed with HVCMOS® technology 5.0V CMOS logic - low power dissipation DMOS output voltage up to 220V Low power level shifting -2.5V to 220V Source current 1.7mA Output fault detection Latched data output General Description The HV3922 is a monolithic, high voltage quad-output driver that is designed to be used in conjunction with the Supertex , Dimension (inches) MIN NOM MAX A .155 .172 .190 A1 .090 .100 .120 A2 .060 REF b .017 .019 .021 Supertex
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A103008

HV3922C

Abstract: HV3922 HV3922 High Voltage PIN Diode Driver Features General Description The HV3922 is a monolithic, high voltage quad-output driver that is designed to be used in conjunction with the Supertex VN2222NC, a separate N-channel DMOS FET quad array, whose device characterics are briefly described below. Together, these devices perform a 220V pushpull function that is especially , .019 .029 .490 .450 .490 .450 .021 .032 .495 .465 .495 .465 JEDEC
Supertex
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220V DC TEMPERATURE CONTROL 220v to 5v HV3922PJ D0413 A041509
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