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LTC5582IDD#TRPBF Linear Technology LTC5582 - 40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC5582IDD#PBF Linear Technology LTC5582 - 40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6409IUDB#TRPBF Linear Technology LTC6409 - 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver; Package: QFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6409IUDB#TRMPBF Linear Technology LTC6409 - 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver; Package: QFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6409HUDB#TRPBF Linear Technology LTC6409 - 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver; Package: QFN; Pins: 10; Temperature Range: -40°C to 125°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6409CUDB#TRPBF Linear Technology LTC6409 - 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver; Package: QFN; Pins: 10; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy

PIN Diode Switch for frequencies up to 10 GHz

Catalog Datasheet MFG & Type PDF Document Tags

Solid State Switches

Abstract: pin diode switch up to 10 GHz ) switch offers typically > 100 dB of isolation up to 6 GHz. 0 -2 0 0 10 20 30 40 50 , switches, which have the lowest loss (up to 26.5 GHz), are suitable for these types of applications. Refer , from DC to 26.5 GHz) compared to the solid state switches. The 85331B 50 GHz solid state (PIN) switch , to serve as a platform of comparisons for the technologies explained. The two mainstream switch , from the drain to the source of the FET. The PIN diode consists of a high resistivity intrinsic (I
Agilent Technologies
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Solid State Switches pin diode switch up to 10 GHz N1810TL PIN Diode Switch for frequencies up to 10 GHz Solid State Microwave microwave fet IC 5989-5189EN

UHF Phase Shifter

Abstract: used in broadband designs up to 10 GHz for Outline 60, and 18 GHz for Outline 61. Because of good heat , GHz and for resonated narrow band circuits up to 8 GHz. In addition, they have medium power handling , characteristic to some degree, but the PIN diode is optimized in design to achieve a relatively wide resistance , control circuits. At RF frequencies, the PIN diode with forward bias behaves essentially as a pure resistor. The resistance of the PIN diode is related to the bias current, the geometry of the I-layer and
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UHF Phase Shifter

pin diodes marking AA

Abstract: DEMO-HMPP-389T -389T low inductance wide band shunt switch is well suited for applications up to 6 GHz. · Better , 0.6 dB up to 6 GHz (Figure 23). Applying a reverse bias to the PIN diode has the effect of reducing , attenuators in very large quantities. For over 30 years, designers have looked to the PIN diode for high , frequencies > 10 fC. One can see that the curve of resistance vs. bias current for the bulk diode is much , be used at frequencies which are higher than the upper limit for conventional PIN diodes. · Low
Avago Technologies
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HMPP-389T pin diodes marking AA DEMO-HMPP-389T HMPP-3890 HMPP-3892 HMPP-3895 HMPP-389 HMPP-3893 RS-481 5989-3630EN AV02-0653EN

pin diode

Abstract: DEMO-HMPP-389T -389T low inductance wide band shunt switch is well suited for applications up to 6 GHz. · Better , up to 6 GHz (Figure 23). Applying a reverse bias to the PIN diode has the effect of reducing its , the PIN diode for high performance/low cost solutions to their switching and level control needs , long (400 to 3000 nsec. for bulk diodes). Lifetime has a strong influence over a number of PIN diode , be used at frequencies which are higher than the upper limit for conventional PIN diodes. · Low
Avago Technologies
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pin diode HSMP-3880 HSMP-389T QFN PACKAGE thermal resistance

SK063A

Abstract: sk063 -389T low inductance wide band shunt switch is well suited for applications up to 6 GHz. · Better , up to 6 GHz (Figure 23). Applying a reverse bias to the PIN diode has the effect of reducing its , the PIN diode for high performance/low cost solutions to their switching and level control needs , long (400 to 3000 nsec. for bulk diodes). Lifetime has a strong influence over a number of PIN diode , be used at frequencies which are higher than the upper limit for conventional PIN diodes. · Low
Avago Technologies
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SK063A sk063 spice hmpp-3892 aplac

pin diode microstrip

Abstract: DEMO-HMPP-389T loss was under 0.6 dB up to 6 GHz (Figure 18). Applying a reverse bias to the PIN diode has the , applications up to 6 GHz. Pin Connections and Package Marking 4 3 AA 2 1 Package Lead Code , and attenuators in very large quantities. For over 30 years, designers have looked to the PIN diode , be used at frequencies which are higher than the upper limit for conventional PIN diodes. · , Intercept point will be higher at higher frequencies 105 100 95 90 1 GHz 0.15 0.1 1 10
Agilent Technologies
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pin diode microstrip pin diode agilent crescent frequency products marking 082 5988-4071EN 5988-5733EN
Abstract: was under 0.6 dB up to 6 GHz (Figure 18). Applying a reverse bias to the PIN diode has the effect of , applications up to 6 GHz. · Single and dual versions · Matched diodes for consistent performance · Low , as PIN diode switches and attenuators in very large quantities. For over 30 years, designers have looked to the PIN diode for high performance/low cost solutions to their switching and level control , at frequencies which are higher than the upper limit for conventional PIN diodes. Note that Agilent Agilent Technologies
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5989-3178EN

pin diode microstrip

Abstract: 125 diode loss was under 0.6 dB up to 6 GHz (Figure 18). Applying a reverse bias to the PIN diode has the , suited for applications up to 6 GHz. Package Lead Code Identification (Top View) Single , quantities. For over 30 years, designers have looked to the PIN diode for high performance/low cost , (400 to 3000 nsec. for bulk diodes). Lifetime has a strong influence over a number of PIN diode , used at frequencies which are higher than the upper limit for conventional PIN diodes. · Low
Avago Technologies
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125 diode 63 marking code diode diode led ir diode MARKING CODE 930 marking code 17 surface mount diode pn junction diode structure

DSA0043308

Abstract: was under 0.6 dB up to 6 GHz (Figure 18). Applying a reverse bias to the PIN diode has the effect of , applications up to 6 GHz. · Single and dual versions · Matched diodes for consistent performance · Low , as PIN diode switches and attenuators in very large quantities. For over 30 years, designers have looked to the PIN diode for high performance/low cost solutions to their switching and level control , at frequencies which are higher than the upper limit for conventional PIN diodes. Note that Agilent
Agilent Technologies
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DSA0043308
Abstract: service. An example device is a GaAs monolithic PIN diode SP4T switch that operates from DC to 20 GHz , . One limitation of a PIN diode switch is its lower frequency limit of a few kHz to about a MHz , switch to work up to the desired frequency. Shunt diode switches have limited bandwidth arising from the , . Work has been done that shows graphene flakes that can operate as a switch up to 60 GHz with , GaAs MMICs at frequencies up to a few GHz and they offer cost and integration advantages. SOI and SOS -
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Abstract: 50 Ohm 2.92mm SP8T PIN Diode Switch Operating From 500 MHz to 40 GHz Up To +20 dBm TECHNICAL DATA , , inventory and certifications: 50 Ohm 2.92mm SP8T PIN Diode Switch Operating From 500 MHz to 40 GHz Up To +20 dBm PE7173 PE7173 REV NC 1 50 Ohm 2.92mm SP8T PIN Diode Switch Operating From 500 MHz to , °C, sea level 50 Ohm 2.92mm SP8T PIN Diode Switch Operating From 500 MHz to 40 GHz Up To +20 dBm , '¢ â'¢ â'¢ â'¢ Designs with Operating Frequencies from 0.5 GHz up to 18 GHz or 40 GHz Pasternack Enterprises
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anzac switches

Abstract: anzac configuration for PIN diode switches. Shown in Figure 2a, the shunt switch has excellent isolation properties , features of PIN diode RF switches is the ability to switch quickly and reliably. The all-solidstate , insertion loss RF perfor The PIN diode switch proves to be an excellent mance. A benefit of the intrinsic , totally solid state in operation. PIN diode RF switches are typically used in small signal (less than +10 , more detailed treatm ent avail able in the literature.4 6 The series PIN diode switch is shown in
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anzac switches anzac SIGNAL PATH designer designers handbook PD-500
Abstract: isolation up to 30 dB from a single diode. However, the behaviour of a PIN diode as a switch is affected as , certain diodes. For others, a voltage of 20â'"50 volts will usually be sufficient to switch the diode , Above 1 GHz, the characteristics of PIN diodes are largely independent of frequency up to the level at , applications from less than 1 MHz to millimetric frequencies, and for incorporation into all types of feeder , function of peak r.f. voltage 132 Thermal Limitations Heat will be generated in a PIN diode due to -
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CT3551-1 DC2400A DC2600A DA2000

CMOS Switches Offer High Performance in Low Power, Wideband Applications

Abstract: ADG901 the order of 0.1 ohm for 1 A up to 10 kohm for 1 µA. Accordingly, the first drawback when using PIN , aviation industry that require an operating frequency up to 1 GHz and beyond. Wideband Switch Basics Wideband switches are designed to meet the demands of devices transmitting at frequencies up to 1 GHz and , than 30 dB isolation at higher frequencies when using a single-series or shunt-connected PIN diode. To , up to 1 GHz and beyond. This is the case for RF switches also, as CMOS switches with a 1 GHz, 3 dB
Analog Devices
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ADG901 CMOS Switches Offer High Performance in Low Power, Wideband Applications ADG918 ADG919 Applications of microcontrollers in aviation CMOS switch

phase shifter using lumped elements

Abstract: HSMP-389V series-shunt configuration transmit/receive switch using PIN diodes as shown in Figure 1 has been in use for , grows in importance at higher frequencies as "off " PIN diodes are usually the elements responsible for , . Description In transmit mode bias current is applied to the switch and this current biases both PIN diodes , 0.5 1.0 1.5 2.0 FREQUENCY (GHz) 2.5 3.0 Figure 7. 900 MHz Switch, Rx Mode Simulation 0 S21 -5 -10 (dB) The value of R1 on the demoboard sets the diode bias current for a given
Agilent Technologies
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HSMP-389V phase shifter using lumped elements MCH18 C0035 900MH 5968-2597E

in5411

Abstract: MTT-18 ideal for microstrip circuits operating at frequencies up to or above 6 GHz. 1. To compare the , An SPDT PIN Diode T/R Switch for PCN Applications Application Note 1067 Introduction The PCN , . However, to protect the receiver (Pin < +10 dBm) from being damaged by a 1 transmitter, more than 20 dB , T/R Switch. Diode Limitations PIN diode switches, operating in the frequency ranges of HF , isolation compared to a conventional diode. However, isolation in the PCN band is still less than 10 dB
Avago Technologies
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MTT-18 in5411 loss tangent of FR4 HSMP-3892 HSMP-4890 HT2 material MTT-17 MTT-35 5962-8450E 5966-0164E

High voltage diodes

Abstract: dBm input power, +13 dBm flat leakage power, up to 10 GHz Land mobile radio, military , power, up to 10 GHz Land mobile radio, military, infrastructure, and more CLA4609-086LF Course , 1.0 SMS7630-061 Detector applications up to 40 GHz Lowest barrier height, low inductance 0.15 , , test and measurement equipment, land mobile radio, and more. PIN Diodes for Switch and Attenuator , , +13 dBm flat leakage power, up to 2.5 GHz Land mobile radio, military, infrastructure, and more
Skyworks Solutions
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High voltage diodes SMP1345-040LF SMP1320-040LF SMP1352-079LF SMS7630-040LF SMS3922-079LF SC-79

DECT transmitter siemens

Abstract: BAR63 diodes are starting to replace conventional duplex filters in the transmit/receive switch. For this , isolation performance of a shunt diode at frequencies of 1 GHz and higher is mainly determined by the inductance to ground. The BAR 80 is optimized for use as a shunt diode, so that inductance to ground has been , ) MW-4 package 0.83 nH 0.42 0.95 pF 0.14 nH ON state I = 10mA Valid up to 3 GHz 27 , isolation of up to 39 dB at 1.8 GHz, while loss in the forward direction is only 0.3 dB. Fig. 7 depicts
Siemens
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DECT transmitter siemens BAR63 BAR63-04 SIEMENS MICROWAVE RADIO 8 GHz 6 GHz SMD PIN diode DECT siemens

Microwave Switch Technology: Part 2

Abstract: to 6.25 W. A Practical Design Hint PIN diode circuit performance at RF frequencies is predictable , 1.2 dB at 1.0 GHz. PIN vs. FET Switches â'" Which One to Use? PIN diodes and FETs have relative , I layer to lower its impedance to the required level. The typical bias current for a PIN diode in a switch is 10 to 20 milliamps. Distortion Performance The PIN diodes produce nearly ideal, very , discussed an overview of RF/microwave switch topologies, PIN diode theory of operation, and some simple
Skyworks Solutions
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Microwave Switch Technology: Part 2 APN1002

pin diode microstrip

Abstract: UMX9601 series has been designed and characterized as shunt switch elements at frequencies to 4 GHz in , of PIN diodes was developed for shunt mount applications in microstrip circuits. Good switch performance is demonstrated at frequencies from UHF to 4 GHz and higher. This performance is achieved using , for preparation of microstrip circuit boards to accommodate these PIN diodes. A detailed design for , UM9601 and UM9603 Respectively for peak power handling to 3 kW 1. Low insertion loss switches to 4 GHz
Microsemi
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UM9608 UM9401 UMX9601 UM9601, PIN Diode HIGH POWER ANTENNA SWITCH PIN DIODE UM9602 UM9601-UM9608 UM9601-9608 VJ0805A300KF
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