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TD480H4050RMN GE Critical Power SPD DIN RAIL 480 HI LEG 50KA NG visit GE Critical Power
TD480H4025RMN GE Critical Power SPD DIN RAIL 480 HI LEG 25KA NG visit GE Critical Power
TD240H4050RMN GE Critical Power SPD DIN RAIL 240 HI LEG 50KA NG visit GE Critical Power
TD240H4025RMN GE Critical Power SPD DIN RAIL 240 HI LEG 25KA NG visit GE Critical Power
TIL601 Texas Instruments TIL601 N-P-N Planar Silicon Phototransistors visit Texas Instruments
TIL603 Texas Instruments TIL603 N-P-N Planar Silicon Phototransistors visit Texas Instruments

PHOTOTRANSISTOR 3 LEGS

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PHOTOTRANSISTOR 3 LEGS

Abstract: EE-SX1235-P2 detector element (phototransistor) opposing each other on the same optical axis is housed in a case to , (LED) and detector element (phototransistor) are arranged in the same direction, to sense the presence , , depths, and shapes. Phototransistor output A pair of light source element (LED) and detector element (phototransistor) are housed in a case. When an object to be sensed interrupts the path of light from the LED or reflects the light, the output of the phototransistor changes analogously
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Abstract: //- S 3 HARRIS SEMICOND SECTOR 37E D I M305571 Photon Coupled Isolator , Diode & NPN Silicon Photo-Transistor A C D The GE Solid State GEPS2001 is a gallium arsenide, infrared emit­ ting diode coupled with a silicon phototransistor in a dual-in-line package. This device , N T INFR A R ED EM ITTIN G DIODE 3 1« (TOP VIEW ! *100 60 3 Power , 1 2 3 4 NOTES. 1 IN S T A LL E D PO SITION LE AO CENTERS- " t - ~ t Ftâ'" 2 O V E R A -
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92CS-42662 92CS-429S1
Abstract: type 4N28 196 2703 Dâ'"1 0 4 .t35 270 PHOTO-TRANSISTOR TYP. MAX. 3 - , 3 7E SECTOR 43Q2571 » 0027134 Photon Coupled Isolator 4 N 2 5 -4 N 2 5 A -4 N 2 6 -4 N 2 7 -4 N 2 8 SYMBOL Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor â'¢ â , 1.78 2.28 2 80 2.16 .203 305 2 54 c M Û M IN . T*-ÿ/-S 3 IHAS 7 M IL L IM E , infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. These devices -
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4N25-4N26-4N27-4N28
Abstract: DEVICE PHOTO-TRANSISTOR Power Dissipation *3 0 0 milliwatts 300 300 7 100 volts , HARRIS SEMICOND 3 7E SECTOR D 4305271 â¡0273G0 I HAS = 1 , ilicon High V o ltage Photo-Transistor The G E Solid State CNY33 is a gallium arsenide, infrared , Dissipation Forward Current (Continuous) Forward Current (Peak) (Pulse width 1 jusec 3 0 0 pps) Reverse Voltage *100 60 3 6 milliwatts milliamps ampere » ! « ; . ' . â  â  * â -
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S-42662 S-429S1

PHOTOTRANSISTOR 3 LEGS

Abstract: GFH600-1 -4J-S3 Photon Coupled Isolator GFH600 Ga As Solid State Lamp & NPN Silicon Photo-Transistor The GE Solid State GFH600 consists of a gallium arsenide infrared emitting diode coupled with a silicon photo-transistor in , (Continuous) 60 milliamps Forward Current (Peak) 3 ampere (Pulse width 1/is, 300 PPs) Reverse Voltage 6 volts * Derate 1.33 mW/°C above 25°C PHOTO-TRANSISTOR Power Dissipation - TA *1S0 milliwatts , E _ 6 08 - 200 3 F 1 01 1 78 040 070 G 2 28 2 80 090 110 H - 2 16 - 085 4 J 203 305 008 012
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PHOTOTRANSISTOR 3 LEGS GFH600-1 S3 UM1 340 opto isolator G027322 0Q273S1 92CS-42862 92CS-428M

TRANSISTOR CD 2897

Abstract: k 2897 transistor ff-3 Photon Coupled Isolator GFH601 Ga As Solid State Lamp & NPN Silicon Photo-Transistor The GE , photo-transistor in a dual-in-line package. This device is also available in Surface-Mount packaging. FEATURES: â , (Continuous) 60 milliamps Forward Current (Peak) 3 ampere (Pulse width 1/js, 300 PPs) Reverse Voltage 6 volts â'¢Derate 1.33mW/°C above 2S°C PHOTO-TRANSISTOR Power Dissipation - TA ♦*150 milliwatts , E _ 5 08 - 200 3 F 101 1.78 040 070 G 2 28 2 80 090 110 H - 2 16 - 085 4 J 203 305 008 012 K
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TRANSISTOR CD 2897 k 2897 transistor 100J1 430SS71 DG2732

cq 838

Abstract: S SEMICOND 3 7E SECTOR D 430E271 GG27SÃ"D 7 â  T ^ y /- S 3 Photon Coupled , emitting diode coupled with a silicon photo-transistor in a dual-in-line package. This device is also , INFRARED EMITTING DIODE *100 60 3 5 M IL L IM E T E R S M IN . A Power Dissipation Forward , 2.92 8.10 3 43 6.86 M AX. 330 350 .300 REF. _ .340 .020 .016 .200 .070 .040 .110 .090 085 012 .008 .100 16 * .016 .375 .116 .240 1 2 3 4 >136 .270 NOTES: 1. IN
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cq 838 CQY80 S-429S
Abstract: . PHOTO-TRANSISTOR INFRARED EM ITTIN G DIODE Power Dissipation Forward Current (Continuous) Forward Current (peak, IOOjUs, 1% duty cycle) Reverse Voltage *100 60 1 3 milliwatts milliamps amp Power , . UNITS MIN. PHOTO-TRANSISTOR Reverse Current (V r = 2V) Capacitance , - 005720=* t 3 *H AS ~ - y ,/- 7 3 / / - N3RMAUZE0 TO* Ip -2 0 m A VCE s 5V P V* lOOps , TEMPERATURE-^ Ta *AM8IENT TEMPERATURE-^ 4. LEAKAGE CURRENTS VS. TEMPERATURE 3. VCE(sat ) VS -
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CNY28
Abstract: _ HARRIS SE MI COND SECTOR 37E T > -r-M 1-7 3 I 4302271 0027244 3 HHAS 1m m , Module is agallium arsenide infrared emitting diode coupled to a silicon phototransistor in a plastic , °C T stg ! T i"i k l PHOTOTRANSISTOR IN FRA RED EMITTING DIODE Power Dissipation Forward , If *100 60 mW mA If 3 A Vr 6 V *150 100 mW mA V CEO 55 V , distance from a plane, defined by the end of the three longest legs to the end of the shortest leg -
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Abstract: Specifications_ T -V /-S 3 Photon Coupled Isolator4N38,4N38A MIN. 3 1« tTOPVIEWI 4 , 070 .110 085 040 090 008 100 015 115 240 NOTES 1 INSTALLED POSITION LEAD CENTERS 3 , '" UNITS volts m icroam ps picofarads MIN. TYP. PHOTO-TRANSISTOR MAX. UNITS 80 - , 15 PHOTO-TRANSISTOR fP o w e r D issipation *150 t Forw ard C urrent (C o n tin u o u s) 80 {F o rw ard C urrent (P eak) 3 (Pulse w id th 300jisec, 2% d u ty cycle) t Reverse V oltage 3 â -
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E51868

PHOTOTRANSISTOR 3 LEGS

Abstract: , reference file E5I868 3 0 0 _ 2807 E' 02 .330 1 .350 30 0 REF. .340 ISO 2.16 JOS PHOTO-TRANSISTOR Pow er Dissipation - T A = 25° C 8 33 1 8 89 7.62 REF. 9.33 3 , silicon phototransistor in a dual-in-line package. The GE SL5511 complies with UTE requirements as per , , 300 pps) 3 amperes Reverse Voltage 6 volts ♦Derate 1.33 m\V/°C above 25 , ENSION 3. TH ESE M EASU REM EN TS A R E M AD E FROM TH E SEATING PLANE 4. FOUR PLACES t 01E
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0G2723 SL551I C96-551 92CS-428S1
Abstract: Darlington Connected Phototransistor The GE Solid State MCA series consists of a gallium arsenide infrared , f R i s ! 0.5 3 3 8 150 THESE M EASUR EM ENTS A R E M A D E FR O M THE SE A T IN G , ♦♦Derate 2 .8m W /°C above 25°C ambient. EMITTER 2 3 3 milliamps 10 , TOTAL DEVICE DARLINGTON CONNECTED PHOTO-TRANSISTOR Power Dissipation â'" MCA230/MCA231 - MCA255 V c b o â'" MCA230/MCA231 - MCA255 15 9 53 3 43 6 86 NOTES MAX. 330 350 .3 00 REF -
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M302271 DGE7330 MCA230 MCA231
Abstract: emitting diode coupled with a silicon photo-transistor in a dual-in-line package. This device is also , G D IO D E 15 381 R *200 60 3 Power Dissipation Forward Current (Continuous , ampere 3 MAX. ' 2 92 6 10 953 3 43 6 86 1 INCHES MILLIMETERS vw ax MIN , 008 i to o 15 015 375 115 135 240 270 1 2 3 4 NOTES 1 INSTALLED POSITION LEAD CENTERS 2 OVERALL INSTALLED DIMENSION 3 THESE MEASUREMENTS ARE MAOE FROM THE SEATING PLANE volts -
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D02733 MCT210
Abstract: , MCT2E and MCT26 are gallium arsenide, infrared emitting diodes coupled with a silicon phototransistor , ratings: (25°C) â  SYMJUL -Eâ'"N A 3 C 4 » A J U ^ »â'¢ C O (TOP VIEW , *200 Power Dissipation 60 Forward Current (Continuous) 3 Forward Current (Peak) (Pulse width l/jsec 300 P Ps) 3 Reverse Voltage ♦ erate 2.6mW/°C above 25°C am D bient. milliwatts , 08 101 1 78 2 28 2 80 ' 2 16 203 305 â'˜ 2.54 15 381 9.53 , 2 92 3 43 > 6.10 6 86 1 -
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43D2271 00S733
Abstract: _ HA RR IS S E M I C O N D S E C T O R 37E D â  LiBDSSTl 0 0 2 7 1 ^ 4 3 â  HAS Photon , Phototransistor The GE Solid State H U G series consists of a gallium arsenide, infrared emitting diode coupled with a silicon, darlington con­ nected, phototransistor which has an integral base-emitter resistor , .200 040 070 090 HO â'" 085 008 012 100 15 â'" 015 .375 115 135 240 27à t 2 3 4 2. OVERALL INSTALLED DIMENSION 3. THESE MEASUREMENTS ARE MADE FROM THE SEATING PLANE. 4 FOUR -
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Abstract: Darlington con­ nected phototransistor. The devices are housed in a low-cost plastic package with lead , ANO ThE END OF THE LEAOS. DARLINGTON CONNECTED PHOTOTRANSISTOR (DETECTOR) (EMITTER) IN FR A R , 0 9 0 1 1 ó 2 29 2.7 9 â'" â'" ¿Sô é .ii â'" .3 0 0 1 75 2 .0 9 0 NOM. 1 27 NOM. Ã" 2Ã" 0 3 0 50 1 76 .0 2 0 1 0 3 0 50 1 76 N TE O Steady-State Isolation Voltage (Input to , If 3 A Vr 4 V "Derate t.iTmW^C above 25'*C ambient. Power Dissipation Collector -
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0G27272 H24B1-H24B2
Abstract: -T - W J - à 3 HARRI S SEMI COND SECTOR 3 7E D â  4305571 0057534 0 â , emitting diode coupled with a silicon phototransistor in a dual-in-line package. The GE SL5504 complies , width 1 ¡dsec, 300 pps) 3 amperes Reverse Voltage 6 volts A a C D E F G H J , 3S1 9J3 2 92 3 43 6 86 6 10 INCHES M IN. MAX. .330 .350 .300 REF . 340 020 0.16 , 1 2 3 4 NOTES 1. INSTALLED POSITIO N LEAD CENTERS 2. OVERALL INSTALLED DIM ENSIO N 3 -
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Abstract: /-& 3 HARRIS SEMICOND SECTOR 37E » â  4302271 QD2723Q 3 « H A S Photon Coupled , emitting diode coupled with a silicon phototransistor in a dual-in-line package. They comply with UTE , 4 1L _U 6 Ì -\F 3 \f absolute maximum ratings: (25°C) (unless otherw specified , urrent (Peak) (Pulse width 1 fjsec, 300 pps) 3 amperes Reverse Voltage 6 volts ♦D , JJ 2.92 3 43 6 86 6 10 _ â'" _ _ _ _ INCHES M IN. MAX. 350 J30 300 REF -
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SL5500 SL5501
Abstract: CONNECTED PHOTOTRANSISTOR INFRARED EMITTING DIODE Pe If *100 60 mW mA If 3 A Vr , arsenide, infrared emitting diode and a silicon, darlington connected, phototransistor. The clear epoxy , L Li S 3 .078 N O M .500 1.98 NO M . 12.7 1 40 1.85 OSS .065 83 94 .033 .037 3 NO TES. t. Tw o lead«. L*ad c ro » lection dim tniioni uncontrolled within , trua pom lan 3. A i m easur'd at tha listin g plana. 4. Inert dim int.ons derived from millimeter*. -
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43G2271 H23B1
Abstract: c ific a tio n s -T â'˜- V / 'à 3 Photon Coupled Isolator H11A520-H11A550 -H11A5100. , photo-transistor in a dual in-line package. These devices are also available in surface-mount packaging. SE A T , *100 60 3 S milliwatts milliamps amperes NOTES M AX M IN . 8 38 8 89 7 62 REF , 3 43 6 86 MAX. 330 350 300 REF 340 020 01Ã" 200 070 040 no 090 085 012 008 100 15 015 375 i 15 135 240 270 2 3 4 â \OTES 1 IN S T A L L E D POSITION LE A O -
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4305E71 11A520 11A550
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