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PHOTOTRANSISTOR 3 LEGS

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Abstract: detector element (phototransistor) opposing each other on the same optical axis is housed in a case to , (LED) and detector element (phototransistor) are arranged in the same direction, to sense the presence , , depths, and shapes. Phototransistor output A pair of light source element (LED) and detector element (phototransistor) are housed in a case. When an object to be sensed interrupts the path of light from the LED or reflects the light, the output of the phototransistor changes analogously ... OCR Scan
datasheet

6 pages,
338.41 Kb

welding machine diagram Electric Welding Machine diagram EE-SA401-P IR sensor and photo diode pair EE-SX1235-P2 PHOTOTRANSISTOR 3 LEGS TEXT
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Abstract:  //- S 3 HARRIS SEMICOND SECTOR 37E D I M305571 M305571 Photon Coupled Isolator , Diode & NPN Silicon Photo-Transistor A C D The GE Solid State GEPS2001 GEPS2001 is a gallium arsenide, infrared emit­ ting diode coupled with a silicon phototransistor in a dual-in-line package. This device , N T INFR A R ED EM ITTIN G DIODE 3 1« (TOP VIEW ! *100 60 3 Power , 1 2 3 4 NOTES. 1 IN S T A LL E D PO SITION LE AO CENTERS- " t - ~ t Ft— 2 O V E R A ... OCR Scan
datasheet

3 pages,
105.43 Kb

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Abstract: type 4N28 196 2703 D—1 0 4 .t35 270 PHOTO-TRANSISTOR TYP. MAX. 3 - , 3 7E SECTOR 43Q2571 43Q2571 » 0027134 Photon Coupled Isolator 4 N 2 5 -4 N 2 5 A -4 N 2 6 -4 N 2 7 -4 N 2 8 SYMBOL Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor • â , 1.78 2.28 2 80 2.16 .203 305 2 54 c M Û M IN . T*-ÿ/-S 3 IHAS 7 M IL L IM E , infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. These devices ... OCR Scan
datasheet

3 pages,
109.11 Kb

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Abstract: DEVICE PHOTO-TRANSISTOR Power Dissipation *3 0 0 milliwatts 300 300 7 100 volts , HARRIS SEMICOND 3 7E SECTOR D 4305271 □0273G0 0273G0 I HAS = 1 , ilicon High V o ltage Photo-Transistor The G E Solid State CNY33 CNY33 is a gallium arsenide, infrared , Dissipation Forward Current (Continuous) Forward Current (Peak) (Pulse width 1 jusec 3 0 0 pps) Reverse Voltage *100 60 3 6 milliwatts milliamps ampere » ! « ; . ' . ■ ■ * â ... OCR Scan
datasheet

3 pages,
105.64 Kb

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Abstract: -4J-S3 Photon Coupled Isolator GFH600 GFH600 Ga As Solid State Lamp & NPN Silicon Photo-Transistor The GE Solid State GFH600 GFH600 consists of a gallium arsenide infrared emitting diode coupled with a silicon photo-transistor in , (Continuous) 60 milliamps Forward Current (Peak) 3 ampere (Pulse width 1/is, 300 PPs) Reverse Voltage 6 volts * Derate 1.33 mW/°C above 25°C PHOTO-TRANSISTOR Power Dissipation - TA *1S0 milliwatts , E _ 6 08 - 200 3 F 1 01 1 78 040 070 G 2 28 2 80 090 110 H - 2 16 - 085 4 J 203 305 008 012 ... OCR Scan
datasheet

6 pages,
361.5 Kb

340 opto isolator S3 UM1 GFH600 PHOTOTRANSISTOR 3 LEGS G027322 TEXT
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Abstract: ff-3 Photon Coupled Isolator GFH601 GFH601 Ga As Solid State Lamp & NPN Silicon Photo-Transistor The GE , photo-transistor in a dual-in-line package. This device is also available in Surface-Mount packaging. FEATURES: â , (Continuous) 60 milliamps Forward Current (Peak) 3 ampere (Pulse width 1/js, 300 PPs) Reverse Voltage 6 volts •Derate 1.33mW/°C above 2S°C PHOTO-TRANSISTOR Power Dissipation - TA ♦*150 milliwatts , E _ 5 08 - 200 3 F 101 1.78 040 070 G 2 28 2 80 090 110 H - 2 16 - 085 4 J 203 305 008 012 K ... OCR Scan
datasheet

5 pages,
379.97 Kb

340 opto isolator 100J1 k 2897 transistor GFH601 TRANSISTOR CD 2897 430SS71 TEXT
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Abstract: S SEMICOND 3 7E SECTOR D 430E271 430E271 GG27S GG27SÔD 7 ■ T ^ y /- S 3 Photon Coupled , emitting diode coupled with a silicon photo-transistor in a dual-in-line package. This device is also , INFRARED EMITTING DIODE *100 60 3 5 M IL L IM E T E R S M IN . A Power Dissipation Forward , 2.92 8.10 3 43 6.86 M AX. 330 350 .300 REF. _ .340 .020 .016 .200 .070 .040 .110 .090 085 012 .008 .100 16 * .016 .375 .116 .240 1 2 3 4 >136 .270 NOTES: 1. IN ... OCR Scan
datasheet

3 pages,
106.2 Kb

cq 838 TEXT
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Abstract: . PHOTO-TRANSISTOR INFRARED EM ITTIN G DIODE Power Dissipation Forward Current (Continuous) Forward Current (peak, IOOjUs, 1% duty cycle) Reverse Voltage *100 60 1 3 milliwatts milliamps amp Power , . UNITS MIN. PHOTO-TRANSISTOR Reverse Current (V r = 2V) Capacitance , - 005720=* t 3 *H AS ~ - y ,/- 7 3 / / - N3RMAUZE0 TO* Ip -2 0 m A VCE s 5V P V* lOOps , TEMPERATURE-^ Ta *AM8IENT TEMPERATURE-^ 4. LEAKAGE CURRENTS VS. TEMPERATURE 3. VCE(sat ) VS ... OCR Scan
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3 pages,
100.78 Kb

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Abstract: _ HARRIS SE MI COND SECTOR 37E T > -r-M 1-7 3 I 4302271 0027244 3 HHAS 1m m , Module is agallium arsenide infrared emitting diode coupled to a silicon phototransistor in a plastic , °C T stg ! T i"i k l PHOTOTRANSISTOR IN FRA RED EMITTING DIODE Power Dissipation Forward , If *100 60 mW mA If 3 A Vr 6 V *150 100 mW mA V CEO 55 V , distance from a plane, defined by the end of the three longest legs to the end of the shortest leg ... OCR Scan
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3 pages,
105.34 Kb

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Abstract: Specifications_ T -V /-S 3 Photon Coupled Isolator4N38,4N38A 4N38A MIN. 3 1« tTOPVIEWI 4 , 070 .110 085 040 090 008 100 015 115 240 NOTES 1 INSTALLED POSITION LEAD CENTERS 3 , €” UNITS volts m icroam ps picofarads MIN. TYP. PHOTO-TRANSISTOR MAX. UNITS 80 - , 15 PHOTO-TRANSISTOR fP o w e r D issipation *150 t Forw ard C urrent (C o n tin u o u s) 80 {F o rw ard C urrent (P eak) 3 (Pulse w id th 300jisec, 2% d u ty cycle) t Reverse V oltage 3 â ... OCR Scan
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4 pages,
109.96 Kb

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NEDIS 01/03/2001 2236.65 Kb ZIP price-06.zip