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Part Manufacturer Description Datasheet BUY
TIL601 Texas Instruments TIL601 N-P-N Planar Silicon Phototransistors visit Texas Instruments
TIL604 Texas Instruments TIL604 N-P-N Planar Silicon Phototransistors visit Texas Instruments
TIL603 Texas Instruments TIL603 N-P-N Planar Silicon Phototransistors visit Texas Instruments
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments

PHOTOTRANSISTOR 3 LEGS

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PHOTOTRANSISTOR 3 LEGS

Abstract: EE-SX1235-P2 detector element (phototransistor) opposing each other on the same optical axis is housed in a case to , (LED) and detector element (phototransistor) are arranged in the same direction, to sense the presence , , depths, and shapes. Phototransistor output A pair of light source element (LED) and detector element (phototransistor) are housed in a case. When an object to be sensed interrupts the path of light from the LED or reflects the light, the output of the phototransistor changes analogously
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Abstract: //- S 3 HARRIS SEMICOND SECTOR 37E D I M305571 Photon Coupled Isolator , Diode & NPN Silicon Photo-Transistor A C D The GE Solid State GEPS2001 is a gallium arsenide, infrared emit­ ting diode coupled with a silicon phototransistor in a dual-in-line package. This device , N T INFR A R ED EM ITTIN G DIODE 3 1« (TOP VIEW ! *100 60 3 Power , 1 2 3 4 NOTES. 1 IN S T A LL E D PO SITION LE AO CENTERS- " t - ~ t Ftâ'" 2 O V E R A -
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92CS-42662 92CS-429S1
Abstract: type 4N28 196 2703 Dâ'"1 0 4 .t35 270 PHOTO-TRANSISTOR TYP. MAX. 3 - , 3 7E SECTOR 43Q2571 » 0027134 Photon Coupled Isolator 4 N 2 5 -4 N 2 5 A -4 N 2 6 -4 N 2 7 -4 N 2 8 SYMBOL Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor â'¢ â , 1.78 2.28 2 80 2.16 .203 305 2 54 c M Û M IN . T*-ÿ/-S 3 IHAS 7 M IL L IM E , infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. These devices -
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4N25-4N26-4N27-4N28
Abstract: DEVICE PHOTO-TRANSISTOR Power Dissipation *3 0 0 milliwatts 300 300 7 100 volts , HARRIS SEMICOND 3 7E SECTOR D 4305271 â¡0273G0 I HAS = 1 , ilicon High V o ltage Photo-Transistor The G E Solid State CNY33 is a gallium arsenide, infrared , Dissipation Forward Current (Continuous) Forward Current (Peak) (Pulse width 1 jusec 3 0 0 pps) Reverse Voltage *100 60 3 6 milliwatts milliamps ampere » ! « ; . ' . â  â  * â -
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S-42662 S-429S1

PHOTOTRANSISTOR 3 LEGS

Abstract: GFH600-1 -4J-S3 Photon Coupled Isolator GFH600 Ga As Solid State Lamp & NPN Silicon Photo-Transistor The GE Solid State GFH600 consists of a gallium arsenide infrared emitting diode coupled with a silicon photo-transistor in , (Continuous) 60 milliamps Forward Current (Peak) 3 ampere (Pulse width 1/is, 300 PPs) Reverse Voltage 6 volts * Derate 1.33 mW/°C above 25°C PHOTO-TRANSISTOR Power Dissipation - TA *1S0 milliwatts , E _ 6 08 - 200 3 F 1 01 1 78 040 070 G 2 28 2 80 090 110 H - 2 16 - 085 4 J 203 305 008 012
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PHOTOTRANSISTOR 3 LEGS GFH600-1 S3 UM1 340 opto isolator G027322 0Q273S1 92CS-42862 92CS-428M

TRANSISTOR CD 2897

Abstract: k 2897 transistor ff-3 Photon Coupled Isolator GFH601 Ga As Solid State Lamp & NPN Silicon Photo-Transistor The GE , photo-transistor in a dual-in-line package. This device is also available in Surface-Mount packaging. FEATURES: â , (Continuous) 60 milliamps Forward Current (Peak) 3 ampere (Pulse width 1/js, 300 PPs) Reverse Voltage 6 volts â'¢Derate 1.33mW/°C above 2S°C PHOTO-TRANSISTOR Power Dissipation - TA ♦*150 milliwatts , E _ 5 08 - 200 3 F 101 1.78 040 070 G 2 28 2 80 090 110 H - 2 16 - 085 4 J 203 305 008 012 K
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TRANSISTOR CD 2897 k 2897 transistor 100J1 430SS71 DG2732

cq 838

Abstract: S SEMICOND 3 7E SECTOR D 430E271 GG27SÃ"D 7 â  T ^ y /- S 3 Photon Coupled , emitting diode coupled with a silicon photo-transistor in a dual-in-line package. This device is also , INFRARED EMITTING DIODE *100 60 3 5 M IL L IM E T E R S M IN . A Power Dissipation Forward , 2.92 8.10 3 43 6.86 M AX. 330 350 .300 REF. _ .340 .020 .016 .200 .070 .040 .110 .090 085 012 .008 .100 16 * .016 .375 .116 .240 1 2 3 4 >136 .270 NOTES: 1. IN
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cq 838 CQY80 S-429S
Abstract: . PHOTO-TRANSISTOR INFRARED EM ITTIN G DIODE Power Dissipation Forward Current (Continuous) Forward Current (peak, IOOjUs, 1% duty cycle) Reverse Voltage *100 60 1 3 milliwatts milliamps amp Power , . UNITS MIN. PHOTO-TRANSISTOR Reverse Current (V r = 2V) Capacitance , - 005720=* t 3 *H AS ~ - y ,/- 7 3 / / - N3RMAUZE0 TO* Ip -2 0 m A VCE s 5V P V* lOOps , TEMPERATURE-^ Ta *AM8IENT TEMPERATURE-^ 4. LEAKAGE CURRENTS VS. TEMPERATURE 3. VCE(sat ) VS -
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CNY28
Abstract: _ HARRIS SE MI COND SECTOR 37E T > -r-M 1-7 3 I 4302271 0027244 3 HHAS 1m m , Module is agallium arsenide infrared emitting diode coupled to a silicon phototransistor in a plastic , °C T stg ! T i"i k l PHOTOTRANSISTOR IN FRA RED EMITTING DIODE Power Dissipation Forward , If *100 60 mW mA If 3 A Vr 6 V *150 100 mW mA V CEO 55 V , distance from a plane, defined by the end of the three longest legs to the end of the shortest leg -
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Abstract: Specifications_ T -V /-S 3 Photon Coupled Isolator4N38,4N38A MIN. 3 1« tTOPVIEWI 4 , 070 .110 085 040 090 008 100 015 115 240 NOTES 1 INSTALLED POSITION LEAD CENTERS 3 , '" UNITS volts m icroam ps picofarads MIN. TYP. PHOTO-TRANSISTOR MAX. UNITS 80 - , 15 PHOTO-TRANSISTOR fP o w e r D issipation *150 t Forw ard C urrent (C o n tin u o u s) 80 {F o rw ard C urrent (P eak) 3 (Pulse w id th 300jisec, 2% d u ty cycle) t Reverse V oltage 3 â -
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E51868

PHOTOTRANSISTOR 3 LEGS

Abstract: , reference file E5I868 3 0 0 _ 2807 E' 02 .330 1 .350 30 0 REF. .340 ISO 2.16 JOS PHOTO-TRANSISTOR Pow er Dissipation - T A = 25° C 8 33 1 8 89 7.62 REF. 9.33 3 , silicon phototransistor in a dual-in-line package. The GE SL5511 complies with UTE requirements as per , , 300 pps) 3 amperes Reverse Voltage 6 volts ♦Derate 1.33 m\V/°C above 25 , ENSION 3. TH ESE M EASU REM EN TS A R E M AD E FROM TH E SEATING PLANE 4. FOUR PLACES t 01E
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0G2723 SL551I C96-551 92CS-428S1
Abstract: Darlington Connected Phototransistor The GE Solid State MCA series consists of a gallium arsenide infrared , f R i s ! 0.5 3 3 8 150 THESE M EASUR EM ENTS A R E M A D E FR O M THE SE A T IN G , ♦♦Derate 2 .8m W /°C above 25°C ambient. EMITTER 2 3 3 milliamps 10 , TOTAL DEVICE DARLINGTON CONNECTED PHOTO-TRANSISTOR Power Dissipation â'" MCA230/MCA231 - MCA255 V c b o â'" MCA230/MCA231 - MCA255 15 9 53 3 43 6 86 NOTES MAX. 330 350 .3 00 REF -
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M302271 DGE7330 MCA230 MCA231
Abstract: emitting diode coupled with a silicon photo-transistor in a dual-in-line package. This device is also , G D IO D E 15 381 R *200 60 3 Power Dissipation Forward Current (Continuous , ampere 3 MAX. ' 2 92 6 10 953 3 43 6 86 1 INCHES MILLIMETERS vw ax MIN , 008 i to o 15 015 375 115 135 240 270 1 2 3 4 NOTES 1 INSTALLED POSITION LEAD CENTERS 2 OVERALL INSTALLED DIMENSION 3 THESE MEASUREMENTS ARE MAOE FROM THE SEATING PLANE volts -
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D02733 MCT210
Abstract: , MCT2E and MCT26 are gallium arsenide, infrared emitting diodes coupled with a silicon phototransistor , ratings: (25°C) â  SYMJUL -Eâ'"N A 3 C 4 » A J U ^ »â'¢ C O (TOP VIEW , *200 Power Dissipation 60 Forward Current (Continuous) 3 Forward Current (Peak) (Pulse width l/jsec 300 P Ps) 3 Reverse Voltage ♦ erate 2.6mW/°C above 25°C am D bient. milliwatts , 08 101 1 78 2 28 2 80 ' 2 16 203 305 â'˜ 2.54 15 381 9.53 , 2 92 3 43 > 6.10 6 86 1 -
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43D2271 00S733
Abstract: _ HA RR IS S E M I C O N D S E C T O R 37E D â  LiBDSSTl 0 0 2 7 1 ^ 4 3 â  HAS Photon , Phototransistor The GE Solid State H U G series consists of a gallium arsenide, infrared emitting diode coupled with a silicon, darlington con­ nected, phototransistor which has an integral base-emitter resistor , .200 040 070 090 HO â'" 085 008 012 100 15 â'" 015 .375 115 135 240 27à t 2 3 4 2. OVERALL INSTALLED DIMENSION 3. THESE MEASUREMENTS ARE MADE FROM THE SEATING PLANE. 4 FOUR -
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Abstract: Darlington con­ nected phototransistor. The devices are housed in a low-cost plastic package with lead , ANO ThE END OF THE LEAOS. DARLINGTON CONNECTED PHOTOTRANSISTOR (DETECTOR) (EMITTER) IN FR A R , 0 9 0 1 1 ó 2 29 2.7 9 â'" â'" ¿Sô é .ii â'" .3 0 0 1 75 2 .0 9 0 NOM. 1 27 NOM. Ã" 2Ã" 0 3 0 50 1 76 .0 2 0 1 0 3 0 50 1 76 N TE O Steady-State Isolation Voltage (Input to , If 3 A Vr 4 V "Derate t.iTmW^C above 25'*C ambient. Power Dissipation Collector -
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0G27272 H24B1-H24B2
Abstract: -T - W J - à 3 HARRI S SEMI COND SECTOR 3 7E D â  4305571 0057534 0 â , emitting diode coupled with a silicon phototransistor in a dual-in-line package. The GE SL5504 complies , width 1 ¡dsec, 300 pps) 3 amperes Reverse Voltage 6 volts A a C D E F G H J , 3S1 9J3 2 92 3 43 6 86 6 10 INCHES M IN. MAX. .330 .350 .300 REF . 340 020 0.16 , 1 2 3 4 NOTES 1. INSTALLED POSITIO N LEAD CENTERS 2. OVERALL INSTALLED DIM ENSIO N 3 -
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Abstract: /-& 3 HARRIS SEMICOND SECTOR 37E » â  4302271 QD2723Q 3 « H A S Photon Coupled , emitting diode coupled with a silicon phototransistor in a dual-in-line package. They comply with UTE , 4 1L _U 6 Ì -\F 3 \f absolute maximum ratings: (25°C) (unless otherw specified , urrent (Peak) (Pulse width 1 fjsec, 300 pps) 3 amperes Reverse Voltage 6 volts ♦D , JJ 2.92 3 43 6 86 6 10 _ â'" _ _ _ _ INCHES M IN. MAX. 350 J30 300 REF -
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SL5500 SL5501
Abstract: CONNECTED PHOTOTRANSISTOR INFRARED EMITTING DIODE Pe If *100 60 mW mA If 3 A Vr , arsenide, infrared emitting diode and a silicon, darlington connected, phototransistor. The clear epoxy , L Li S 3 .078 N O M .500 1.98 NO M . 12.7 1 40 1.85 OSS .065 83 94 .033 .037 3 NO TES. t. Tw o lead«. L*ad c ro » lection dim tniioni uncontrolled within , trua pom lan 3. A i m easur'd at tha listin g plana. 4. Inert dim int.ons derived from millimeter*. -
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43G2271 H23B1
Abstract: c ific a tio n s -T â'˜- V / 'à 3 Photon Coupled Isolator H11A520-H11A550 -H11A5100. , photo-transistor in a dual in-line package. These devices are also available in surface-mount packaging. SE A T , *100 60 3 S milliwatts milliamps amperes NOTES M AX M IN . 8 38 8 89 7 62 REF , 3 43 6 86 MAX. 330 350 300 REF 340 020 01Ã" 200 070 040 no 090 085 012 008 100 15 015 375 i 15 135 240 270 2 3 4 â \OTES 1 IN S T A L L E D POSITION LE A O -
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4305E71 11A520 11A550
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