NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| PG1530 | Pirgo Electronics, Inc. | Silicon Planar Power Transistors |
1 pages, |
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| PG1530 | Pirgo Electronics, Inc. | 50-90 Amp Silicon Planar Power Transistors in TO-114 |
1 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: • Linear hFE from 100 mA to 90 amps • High frequency ft = 10 MHz (minimum) • Low saturation voltage at maximum collector current • High voltage, BVceo(,u>i to 100 volts H NPN 1 Typo „ÄkUl* hFE hFE VCE (sat) Cob Max pf PDW I Package BVCBO BVCEO (sus) BVEBO Min Max 9 icA Min @ IcA Max @ IcA @100°C I 2N3149 2N3149 TO-114 80 80 10 10 50 1.5 50 200 ! 2N3150 2N3150 TO-114 100 100 10 10 50 1.5 50 200 2N4865 2N4865 TO-114 100 80 8 10 40 70 5 90 5 90 200 2N5250 2N5250 TO-114 125 100 10 10 40 70 5 90 5 90 200 PG1530 ... | OCR Scan |
1 pages, |
TO114 PG1530 2X20 2N4865 2N3150 2N3149 U 114 2N5250 2N3149 abstract |
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| Abstract: 125 100 10 10 40 70 5 90 5 90 200 H PG1530 TO-114 100 i^lï'ivî 1 ¿i 80 6 5 50 5 50 snsarassara ... | OCR Scan |
1 pages, |
Pirgo Electronics PG1530 2N4865 2N3149 TO114 nc9c 2N3150 2N5250 datasheet abstract |
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| Abstract: Silicon Carbide Substrates and Epitaxy Product Specications 4H Silicon Carbide Substrates N-type, P-type, and Semi-Insulating 6H Silicon Carbide Substrates N-type N-type and P-type Silicon Carbide Epitaxy Subject to change without notice. www.cree.com 1 Physical Properties Polytype Single Crystal 4H Single Crystal 6H Hexagonal Hexagonal 3.26 eV 3.03 eV Thermal Conductivity (n-type; 0.020 ohm-cm) a~4.2 W/cm · K @ 298 K c~3.7 W/cm · K @ 298 K - ... | Original |
15 pages, |
W4TRF0R-0200 W4PRE8F-0200 W4NRE0X-0D00 cree Sic 1E16 W4TRE0R-0200 datasheet abstract |
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| Abstract: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation ... | Original |
15 pages, |
datasheet abstract |
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| Abstract: HSG2005 HSG2005 SiGe HBT High Frequency Medium Power Amplifier REJ03G0485-0400 REJ03G0485-0400 Rev.4.00 Jun 21, 2006 Features · High Transition Frequency fT = 28.5 GHz typ. · Low Distortion and Excellent Linearity P1dB at output = +21 dBm typ. f = 5.8 GHz · High Collector to Emitter Voltage VCEO = 5 V · Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone. Outline Renesas Package code: PWQN0008ZA-A PWQN0008ZA-A (Package name: HWQFN-8 ) 5 7 6 200 8 Note: 9 9 5 ... | Original |
13 pages, |
PCB 621 REV,4 491 7318 0204-50 HSG2005 REJ03G0485-0400 HSG2005 abstract |
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| Abstract: RQA0014XXDQS RQA0014XXDQS Silicon N-Channel MOS FET REJ03G1704-0100 REJ03G1704-0100 Rev.1.00 Oct 20, 2008 Features · High output power, High gain, High efficiency Pout = +28.5 dBm, Linear Gain = 20 dB, PAE = 60% (f = 450 MHz) · Suitable for UHF driver stage of high power transmission amplifiers · Electrostatic Discharge Immunity Test (IEC Standard 61000-4-2, Level 4) Outline RENESAS package code: PLZZ0004CA-A PLZZ0004CA-A (Package name: UPAK R ) 2 1 3 1. Gate 2. Source 3. Drain 4. Source 4 Note: M ... | Original |
15 pages, |
zo 107 RQA0014XXDQSTL-E RQA0014XXDQS DATASHEET OF IC 741 REJ03G1704-0100 RQA0014XXDQS abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| PG1530 | API Electronics, Inc. | Si NPN Power BJT | |