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PG1530 Datasheet

Part Manufacturer Description PDF Type Ordering
PG1530 Pirgo Electronics, Inc. 50-90 Amp Silicon Planar Power Transistors in TO-114
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1 pages,
185.37 Kb

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PG1530 Pirgo Electronics, Inc. Silicon Planar Power Transistors
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1 pages,
185.86 Kb

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PG1530

Catalog Datasheet Results Type PDF Document Tags
Abstract: 125 100 10 10 40 70 5 90 5 90 200 H PG1530 TO-114 100 i^lï'ivî 1 ¿i 80 6 5 50 5 50 snsarassara ... OCR Scan
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1 pages,
185.37 Kb

TO114 package MIL-Q-9850 2N3149 PG1530 Pirgo Electronics 2N4865 2N3150 nc9c TO114 2N5250 datasheet abstract
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Abstract: 5 5 5 H 1 NPN Typa 2N3149 2N3149 2N3150 2N3150 2N4865 2N4865 2N5250 2N5250 PG1530 V CE (sat) @ lc A Cob Max pf @ ... OCR Scan
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1 pages,
185.86 Kb

U 114 TO114 PG1530 2X20 2N4865 2N3150 2N3149 2N5250 datasheet abstract
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Abstract: Silicon Carbide Substrates and Epitaxy Product Specications 4H Silicon Carbide Substrates N-type, P-type, and Semi-Insulating 6H Silicon Carbide Substrates N-type N-type and P-type Silicon Carbide Epitaxy Subject to change without notice. www.cree.com 1 Physical Properties Polytype Single Crystal 4H Single Crystal 6H Hexagonal Hexagonal 3.26 eV 3.03 eV Thermal Conductivity (n-type; 0.020 ohm-cm) a~4.2 W/cm · K @ 298 K c~3.7 W/cm · K @ 298 K - ... Original
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15 pages,
218.8 Kb

W4TRF0R-0200 W4NRE0X-0D00 silicon carbide cree Sic 1E16 W4TRD0R-0200 W6NRD0X-0D00 W4TRE0R-0200 W4PRE8F-0200 datasheet abstract
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Abstract: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation ... Original
datasheet

15 pages,
273.47 Kb

6228 datasheet abstract
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Abstract: HSG2005 HSG2005 SiGe HBT High Frequency Medium Power Amplifier REJ03G0485-0400 REJ03G0485-0400 Rev.4.00 Jun 21, 2006 Features · High Transition Frequency fT = 28.5 GHz typ. · Low Distortion and Excellent Linearity P1dB at output = +21 dBm typ. f = 5.8 GHz · High Collector to Emitter Voltage VCEO = 5 V · Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone. Outline Renesas Package code: PWQN0008ZA-A PWQN0008ZA-A (Package name: HWQFN-8 ) 5 7 6 200 8 Note: 9 9 5 ... Original
datasheet

13 pages,
247.81 Kb

PCB 621 REV,4 491 7318 0204-50 HSG2005 REJ03G0485-0400 HSG2005 abstract
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Abstract: RQA0014XXDQS RQA0014XXDQS Silicon N-Channel MOS FET REJ03G1704-0100 REJ03G1704-0100 Rev.1.00 Oct 20, 2008 Features · High output power, High gain, High efficiency Pout = +28.5 dBm, Linear Gain = 20 dB, PAE = 60% (f = 450 MHz) · Suitable for UHF driver stage of high power transmission amplifiers · Electrostatic Discharge Immunity Test (IEC Standard 61000-4-2, Level 4) Outline RENESAS package code: PLZZ0004CA-A PLZZ0004CA-A (Package name: UPAK R ) 2 1 3 1. Gate 2. Source 3. Drain 4. Source 4 Note: M ... Original
datasheet

15 pages,
161.62 Kb

zo 107 RQA0014XXDQS DATASHEET OF IC 741 RQA0014XXDQSTL-E REJ03G1704-0100 RQA0014XXDQS abstract
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Shortform Datasheet Search Results

Part Manufacturer Description Shortform Datasheet Ordering
PG1530 API Electronics, Inc. Si NPN Power BJT

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