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Part : UPD421000LA-70 Supplier : NEC Manufacturer : Bristol Electronics Stock : 50 Best Price : $2.6135 Price Each : $5.60
Part : UPD42100070 Supplier : NEC Manufacturer : ComSIT Stock : 219 Best Price : - Price Each : -
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PD421000

Catalog Datasheet MFG & Type PDF Document Tags

NEC 421000

Abstract: PD421000 rw c Î/PD421000-10 M in M ax 60 60 50 60 190 225 60 //PD421000-12 M in M ax 50 50 40 50 220 260 , Characteristics. Ordering Information Pari Num ber u PD421000C-80 Row A cce ss Tim e |max| 80 ns 100 ns , (cont) T a = 0 to r7 0 ° C ; V c c = 5.0 V ±10% //PD421000 Lim its ¿/PD421000-80 Param eter CAS , Sym b o l Vcc V|H Vil Iqc2 //PD421000 Capacitance Ta = 2 5 °C; f = 1 MHz Param eter Unit V V V , -1 R A S -tA R - //PD421000 "V v -IC S H -tR C D -tR S H -IC A S - I -tR P -tC P N -
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NEC 421000 NEC IC D 553 C

NEC 421000

Abstract: TTL 7404 . Device Î/PD421000-80 NEC Operating Current (max) 70 mA 60 mA 50 mA 70 mA 60 mA 50 mA 70 mA 60 mA 50 , 3B 4B 1D 2D 3D 4D 5D 6D 7D 8D OC 1Q 20 30 40 50 60 70 80 G STB STB 4Y A 3 A2 //PD421000-12 or , LS112 LS08 LSOO LS04 IC16 ICC17-IC24 IC25 LS20 Í/PD421000-12, ¿/PD421001-12, or ¿/PD421002-12 V40 , ory cell, refreshing, is perform ed by a sense am p lifie r in the /L/PD421000-series DRAMs. The th re , /PD421000-SERIES DRAMs Y > Multip Multiplexed Addre Inputs Address A0-A9 Addresses Ao-Aj VCC C3
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PD71088 TTL 7404 421000 60 uPD421000 7404 421000 70 PD421001 PD421002 26/20-P 128KB

TTL 7404

Abstract: D421000 03-00^4730 AO 11 A 2 13 VCC 15 AS 17 A7 19 6-277 ¿/PD421000-SERIES DRAMs Table 1. Device //PD421000-80 -10 -12 //PD421001-80 -10 -12 ¿/PD421002-80 -10 -12 NEC Operating Current [max) 70 mA 60 , 83-004411B 6-281 //PD421000-SERIES DRAMs Pin Functions RAS and CAS [or CS]. T he ¿/PD421000 -se ries , /[/PD421000-80 -10 -12 /yPD421001-80 -10 -12 MPD421002-80 -10 -12 Serial access (4 bits maximum) Random , IC9, IC10 IC11 IC12 1C13 1C14. 1C15 LS74 LS112 LS08 LSOO LS04 IC16 ICC17-IC24 LS20 //PD421000-12
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D421000 D42100 421001///P 192KB 256KB 384KB 512KB

TTL 7404

Abstract: L9112 2A 3A 4A INTP 1Y 2Y 3Y As A4 A3 A2 //PD421000-12 or iiPD421Q01-12 or //PD421002-12 Al Ao , C E ¿/PD421000-SERIES DRAMs , Generator CAS before RA3 re internal Refreah Clock //PD421000-SERIES DRAMs 7 ~ < /(> -Z 3 -0 3 WE , & « N E C E ¿/PD421000-SERIES DRAMs Pin Functions RAS and CAS (or CS]. The /¿PD421000-series , memory cell, refreshing, is performed by a sense am plifier in the //PD421000-series DRAMs. The three
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L9112 d032g lm 7404 and pin configuration NS160N tcp 8111 IC-16 M27S25 PD421000/ PD421001/

256Kx1 dRAM

Abstract: dram memory 256kx4 pieces of itPD424256 (or equivalent) and one /*PD421000 (or equivalent) ·TH2C1P2509B and TH3C1P2509B
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256Kx1 dRAM dram memory 256kx4 UPD424256 TH2G1P2508A TH3G1P2508A 097K- TH2G1P25G9A/B TH3C1P2509A/B TH2G1P2508

MC-421000A9B

Abstract: 30-pin nec DRAMs (¿/PD421000) or two 1M x 4 DRAMs (UPD424400) and o ne 1M x 1 DRAM (/JPD421000). Packaging is in a , Two jUPD424400LA One /iPD421000LA Two ¿/PD424400LB One ^PD421000LA 3 MC-421000A9 NEC , ) Applicable to MC-421000A9A/B/F, w hich consists of nine 1M x 1 DRAMs (i/PD421000). (22) Applicable to MC
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MC-421000A9B 30-pin nec C-421000A9 MC-421000A9A/AA/AB MC-421000A MC-421000A9BA/FA/BB/FB

GX-70

Abstract: ice power 200 asc Information Part Number pPD421000C-60 C-70 C-80 C-10 ¿/PD421000C-60L C-70L C-80L C-10L pPD421000LA-60 LA-70 LA-80 LA-10 /¿PD421000LA-60L LA-70L LA-80L LA-10L /¿PD421000V-60 V-70 V-80 V-10 ¿/PD421000V-60L V-70L V-80L V-10L pPD421000GX-60 GX-70 GX-80 GX-10 /¿PD421000GX-60L GX-70L GX-80 L GX-10 L //PD421000GXM-60 , /PD421000-60 and pPD421000-70. 4A -7 jurPD421000 Low-Power Battery Backup (-L Versions Only) The , /PD421000 Timing Waveforms (cont) RAS-Only Refresh Cycle NEC o ut High Impedance
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ice power 200 asc IN6010 C80l SSH-6064A JHPD421000 83IH-8694B

JPD421000

Abstract: 664b eter Is not needed fo r the ¿/PD421000-60 and ¿/PD421000-70. 7 /JPD421000 NEC CAS before RAS , -60 C-70 C-80 C-10 ¿IPD421000C-60L C-70L C-80L C-10L ¿/PD421000LA-60 LA-70 LA-80 LA-10 JJPD421000LA , buffers to be turned off and the amount of leakage current flowing through them reduced, the //PD421000-L
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JPD421000 664b 83IH-6M4A

MC-422000A36

Abstract: ,048,576 x 4-bit /JPD424400 DRAMs, eight 1,048,576 x 1-bit /L/PD421000 DRAMs, and 24 power supply , ) 9.3 mm Six teen /JPD424400LA (0.366 inch) Eight ^PD421000LA 9.3 mm (0.161 inch) Six , '" 00350 - I/O1 VO2 VOz V0 4 OE _C 0-3 -C 2 T DO - D15 (nPD424400) M0-M7(|*PD421000
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MC-422000A36
Abstract: -421000A8: Suffix B, F, BA, FA, BB, FB) J o The MC-421000A8 is available with eight /1/PD421000 DRAMS (1M x 1 -
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83YL-79896
Abstract: The MC-421000A8 is available with eight ^PD421000 DRAMs (1M x 1) or two /JPD424400 DRAMs (1M x 4) in -
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MC-421000A8-60/-70 OA-12 MC-42100QA8
Abstract: ) Sixteen /¿PD424400LA Eight A/PD421000LA 25.4 mm (1.000 inch) 9.3 mm (0.161 inch) Sixteen /¿PD424400GS Eight //PD421000GX 80 ns MC-422000A36F-60 60 ns F-70 70 ns F-80 80 ns MC , D n /Dout WZ DO â'¢ D15 (fiPD424400) MO - M7 (h PD421000) 3 N E C ELECTRONICS INC -
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4275ES 0D3H33E PD424400 83IHC702B 42752S C-422000A

mc-421000a9b-70

Abstract: MC421000A9B70 A 9 is functionally equivalent to eight //PD421000 sta nd a rd 1M D R A M s p lu s a parity bit. R e
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mc-421000a9b-70 MC421000A9B70 NEC 574 PD421000S MC-421000A9A

ltls e3

Abstract: uPD42601 standard DRAMs such as NEC's//PD421000, the use of word-width system architecture and page-cycle accesses
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WD33C93 ltls e3 uPD42601 ltls PD42601 PD43256A

DHR NEC

Abstract: MC-421000A9B-80 , provides go od system operating margins. The M C -421000A 9 is functionally equivalent to eight //PD421000 , system. The S IM M includes nine //PD421000s in S O J packages and nine power supply decoupling , /PD421000LA) Includes power su p p ly decoupling capacitors Low power dissipation: 49.5 m W standby (max
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DHR NEC MC-421000A9B-80

AW 55 IC

Abstract: /PD421000 standard 1M D R A M s plus a parity bit. Refreshing is accomplished by performing R A S -only , packaging (//PD421000LA) Includes power supply decoupling capacitors Low power dissipation: 49.5 mW
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AW 55 IC 427S25 427S2

MC-421000A9BA-60

Abstract: BA 508 C0 DRAMs (/JPD424400) and one 1M x 1 DRAM &/PD421000). 6 N E C ELECTRONICS INC blE D
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MC-421000A9BA-60 BA 508 C0 30-pin simm memory MC-421OOOA9 GG342 0G34B MC-421OOOA9BA/FA/B
Abstract: , eight 1,048,576 x 1-bit /j PD421000 s in SOJ packages, and twenty-four power supply decoupling -
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MC-424512A36BH/FH MC-42512A36BH/FH PD424256

YL-69

Abstract: 70 ns 5.08 mm (0.200 inch) Two ¿/PD424400LA One ¿/PD421000LA 16.8 mm (0.661 inch) 5.08 mm (0.200 inch) Two /JPD424400LB One ¿/PD421000LA 100 ns M C-421000A 9B A- 60 16.8 , ) Applicable to MC-421000A9A/B/F, w hich consists of nine 1M x 1 DRAMs (¿/PD421000). (2) Applicable to MC
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YL-69 MC-421000A9AA/AB MC-421000A9B/F

MC-422000A36FK-70

Abstract: MC-422000A36F-70 CAS RAS D8 Remark D0-D15 : ¿¿PD424400 M0-M7 : //PD421000 i 1/04 C 1/05 C 1/06 C 1/07 C ·1
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422000A36 MC-422000A36FK-70 MC-422000A36F-70 MC-422000A36FK nec mc-422000a36fk-70 MC422000A36FK70 MC-422000A36B-70 MC-422000A32 32-BIT 36-BIT MC-422000A32-80 MC-422000A32-10
Abstract: ,048,576 x 4-bit /JPD424400 DRAMs, eight 1,048,576 x 1-bit /L/PD421000 DRAMs, and 24 power supply , '" 00350 - I/O1 VO2 VOz V0 4 OE _C 0-3 -C 2 T DO - D15 (nPD424400) M0-M7(|*PD421000 -
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MC-421000- MC-421000A4A MC-421000A4B MC-421000A5A

421000-70

Abstract: 10n26 standard DRAMs such as NEC's//PD421000, the use of word-width system architecture and page-cycle accesses
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421000-70 10n26 83IH-65 JJPD421000
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