NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| PCK2002PD,112 | NXP Semiconductors | IC LOW SKEW CLOCK DRIVER, 4 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO8, 3.90 MM, PLASTIC, MS-012, SOT-96-1, SO-8, Clock Driver | 
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| Part | Manufacturer | Description | Type | Ordering |
| PD1124-6C | Everlight Electronic Co., Ltd. |
7 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 10 70 0 30 -30-100 PD-111 PD-111 TO-39 PN307 PN307 5 - 1000 10 50 10 800 - - - - - 30 -25-85 PD-112 f-rn,j-> Ft! ... | OCR Scan |
17 pages, |
S1223 S1190-04 PD-96 S1722 S1863 S1863-01 S1190 s1188 PD-97 S1723 S1723-04 S1723-08 S2216-01 s2506 S1223-01 S1188 S1188-06 S1188 abstract |
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| Abstract: REJ09B0162-0110 REJ09B0162-0110 16/32 M32C/88 M32C/88 Group (M32C/88T M32C/88T) Hardware Manual RENESAS 16/32-BIT 16/32-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M32C/80 M32C/80 SERIES Before using this material, please visit our website to verify that this is the most current document available. Rev. 1.10 Revision Date: Oct. 18, 2005 www.renesas.com Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there ... | Original |
461 pages, |
TAIS SOT specification Note U-96 program motor control with ccs software O M 335 CITEC 22KA BTS 308 REJ09B0162-0110 M32C/88 M32C/88T REJ09B0162-0110 abstract |
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| Abstract: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation ... | Original |
864 pages, |
LSI CMOS Technology l3aa l36a CONTROLLER PT 2323 VIA I2C BUS 4800 8 pin smd datasheet abstract |
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| Abstract: REJ09B0034-0120Z REJ09B0034-0120Z M32C/83 M32C/83 Group 16/32 Hardware Manual RENESAS 16/32-BIT 16/32-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M32C/80 M32C/80 SERIES Before using this material, please visit our website to confirm that this is the most current document available. Rev. 1.20 Revision Date: Jun. 01, 2004 www.renesas.com Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there i ... | Original |
513 pages, |
REJ09B0034-0120Z M32C/83 REJ09B0034-0120Z abstract |
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| Abstract: REJ09B0036-0050Z REJ09B0036-0050Z M32C/84 M32C/84 Group 16/32 Hardware Manual RENESAS 16/32-BIT 16/32-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M32C/80 M32C/80 SERIES Preliminary Before using this material, please visit our website to confirm that this is the most current document available. Rev. 0.50 Revision Date: Jun. 01, 2004 www.renesas.com Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable ... | Original |
488 pages, |
REJ09B0036-0050Z M32C/84 REJ09B0036-0050Z abstract |
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| Abstract: REJ09B0036-0041Z REJ09B0036-0041Z M32C/84 M32C/84 Group 16/32 Hardware Manual RENESAS 16/32-BIT 16/32-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M32C/80 M32C/80 SERIES Preliminary Before using this material, please visit our website to confirm that this is the most current document available. Rev. 0.41 Revision Date: Mar. 10, 2004 www.renesas.com Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable ... | Original |
490 pages, |
REJ09B0036-0041Z M32C/84 REJ09B0036-0041Z abstract |
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| Abstract: REJ09B0037-0041Z REJ09B0037-0041Z M32C/85 M32C/85 Group 16/32 Hardware Manual RENESAS 16/32-BIT 16/32-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M32C SERIES Preliminary Before using this material, please visit our website to confirm that this is the most current document available. Rev. 0.41 Revision Date: Mar. 10, 2004 www.renesas.com Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, b ... | Original |
503 pages, |
M32C REJ09B0037-0041Z M32C/85 REJ09B0037-0041Z abstract |
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| Abstract: REJ09B0037-0050Z REJ09B0037-0050Z M32C/85 M32C/85 Group 16/32 Hardware Manual RENESAS 16/32-BIT 16/32-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M32C SERIES Preliminary Before using this material, please visit our website to confirm that this is the most current document available. Rev. 0.50 Revision Date: Jun. 01, 2004 www.renesas.com Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, b ... | Original |
501 pages, |
M32C REJ09B0037-0050Z M32C/85 REJ09B0037-0050Z abstract |
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| Abstract: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation ... | Original |
531 pages, |
datasheet abstract |
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| Abstract: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corpo ... | Original |
472 pages, |
p110 smd 100P6S-A transistor de audio fp 1016 transistor P45 smd SMD Plastic Mold CRYSTAL smd diode p126 transistor SMD p02 AN271 AN273 T704 diode wg smd gt 1081 P56. smd datasheet abstract |
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| Abstract: Low Power, High Output Current, Quad Op Amp, Dual-Channel ADSL/ADSL2+ Line Driver AD8394 AD8394 PIN CONFIGURATIONS 4 current feedback, high output current amplifiers Ideal for use as ADSL/ADSL2+ dual-channel, central office (CO) line drivers Dual-supply operation from �V to � V Single-supply operation from 12 V to 24 V Low power consumption 700 mW internal power dissipation while driving 20.4 dBm ADSL2+ signal (CF = 5.5) 3 active power modes plus shutdown Low leakage current in shutdow ... | Original |
2 pages, |
AD8394AREZ AD8394 AD8394 abstract |
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| Abstract: MATERIAL AND FINISH Housing: PBT, Valox 420-SEO 420-SEO, UL-94V-0 UL-94V-0 rated, color black Contacts: Phosphor Bronze, 150|j" Tin over 50|j" Nickel Plated MECHANICAL SPECIFICATIONS: Contact retention: 7 IbF. min. 015.2 CENTER LINE OF CONTACT 1.6 MAX. 3.5±0.5 2x1±0.1--1 SECTION A-A -J I--1.4±0.1 -29.5±0.1 2X01.2±O.1 02.4±O.1 RECOMMENDED PCB LAYOUT 3 2 1 2X 03.2 15.2 2x0.8- 3.8 07.5 PD11/2 PD11/2 AÄ SECTION B-B "1 6.4 TOLERANCE UNLESS OTHERWISE SPECIFIED X ± 1 XX ± CIA Power Dynamics, Inc. Phone:973 560-0019 Whippa ... | OCR Scan |
2 pages, |
valox 420 seo UL valox 420 94v UL94V-HB 420-SEO UL-94V-0 420-SEO abstract |
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| Abstract: Imé j TRIPLE 3-INPUT "NAND" GATE MC5410L MC5410L * MC7410P MC7410P,L* 1/3 OF CIRCUIT SHOWN .F $ rrrv < MTTL MC7400P MC7400P series MTTL MC5400L/7400L MC5400L/7400L series *L suffi* ' TO-116 ci'ainic package (Ca»« 632) P suffix - TO 116 piastle pack«9« (Casa 605) See General Information faction for package outlin < This package consists of three 3-input NAND gates. Each gate may be used as an inverter, or two gates may be cross-coupled to form bistable circuits. Positive Logic: 12 « 1 • 2 • Negativ« Logic : 12« 1+ 2 + ... | OCR Scan |
2 pages, |
pulse generator impedance "50 ohm" MC7410P MC7410 MC7400P MC5410L MC5410 MC5400L/7400L MC5410L abstract |
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| Abstract: TECHNICAL DATA FM/AM STEREO RADIORECEIVER KKA1238NS KKA1238NS DESCRIPTION KKA1238NS KKA1238NS is a high performance one - chip bipolar ICS designed for FM/AM stereo radios. These include an FM/AM front end, FM/AM IF amplifier, FM/AM detection output and FM stereo demodulator output. Bipolar silicon monolithic IC. FEATURES · Low current consumption (In FM mode ID = 11.0 mA, in AM mode 8.5 mA, VCC = 6.0V). · Built - in LED drive circuit for tuning. · Built - in LED drive circuit for stereo indicato ... | Original |
3 pages, |
ucc 30 KKA1238NS FM Stereo FM PLL deMODULATOR am fm radio STEREO FM DEMODULATOR FM multiplex Stereo Demodulator AM/FM signal fm AM front End Circuit KKA1238NS abstract |
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| Abstract: HVV0912-800 HVV0912-800 (Preliminary Datasheet) L-Band High Power Pulsed Transistor 960-1215 MHz, 10us Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications DESCRIPTION PACKAGE The high power HVV0912-800 HVV0912-800 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 960 MHz and 1215 MHz. FEATURES The innovative Semiconductor Company! High Power Gain Excellent Ruggedness 50V Supply ... | Original |
2 pages, |
HVV0912-800 HVV0912-800 abstract |
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| Abstract: HVV1011-500L HVV1011-500L (Product Overview) L-Band High Power Pulsed Transistor 32us on/18us off x 48, LTDC 6.4% For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1011-500L HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at the frequencies of 1030 MHz and 1090 MHz with a signal format of 32us on/18us x 48 and a long term duty cycle of 6.4%. FEATURES The innovative Semiconductor Company! High Power Gain ... | Original |
2 pages, |
500W TRANSISTOR HVV1011-500L HVV1011-500L abstract |
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| Abstract: HVV1011-1000L HVV1011-1000L (Preliminary Datasheet) L-Band High Power Pulsed Transistor 32us on/18us off x 48, LTDC 6.4% For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at frequencies between 1030 MHz and 1090 MHz using a 2.4ms pulse burst (32us on/18us off x 48) at 6.4% overall duty cycle. FEATURES The innovative Semiconductor Company! ... | Original |
2 pages, |
interrogator HVV1011-1000L diode gp 429 HVV1011-1000L abstract |
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| Abstract: HVV1214-250L HVV1214-250L (Product Overview) L-Band High Power Pulsed Transistor 2000us Pulse Width, 10% Duty Cycle For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1214-250L HVV1214-250L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating across the frequency range of 1200MHz to 1400Mhz for a 2ms pulse at a 10% duty cycle. FEATURES The innovative Semiconductor Company! High Power Gain Excellent Ruggedness 50V Supply V ... | Original |
2 pages, |
HVV1214-250L HVV1214-250L abstract |
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| Abstract: HVV1012-550 HVV1012-550 (Preliminary Datasheet) L-Band High Power Pulsed Transistor 10us Pulse Width, 1% Duty Cycle For Airborne DME Applications DESCRIPTION PACKAGE The high power HVV1012-550 HVV1012-550 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at the frequencies between 1025 MHz and 1150 MHz. FEATURES The innovative Semiconductor Company! High Power Gain Excellent Ruggedness 50V Supply Voltage ABSOLUTE MAXIMUM RATINGS ... | Original |
2 pages, |
HVV1012-550 500W TRANSISTOR HVV1012-550 abstract |
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| Abstract: HVV0912-450 HVV0912-450 (Preliminary Datasheet) L-Band High Power Pulsed Transistor 960-1215 MHz, 10us Pulsewidth, 10% Duty Cycle For Ground DME/TACAN Applications DESCRIPTION PACKAGE The high power HVV0912-450 HVV0912-450 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 960 MHz and 1215 MHz. FEATURES The innovative Semiconductor Company! High Power Gain Excellent Ruggedness 50V Supply Voltage ... | Original |
2 pages, |
TACAN diode gp 429 HVV0912-450 HVV0912-450 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| (.OUT (VCC); X_ZERO GND_149 (.OUT (GND); X_PD NGD2VER_PD_110 (.OUT (GSR) ); X_PD NGD2VER_PD_112 (.OUT (GTS) ); endmodule www.datasheetarchive.com/download/52728641-985501ZC/wcd00ea6.zip (time_sim.v) |
Xilinx | 12/02/1999 | 7683.96 Kb | ZIP | wcd00ea6.zip |
| (.OUT (VCC); X_ZERO GND_149 (.OUT (GND); X_PD NGD2VER_PD_110 (.OUT (GSR) ); X_PD NGD2VER_PD_112 (.OUT (GTS) ); endmodule www.datasheetarchive.com/download/1770998-985499ZC/wcd00ea4.zip (time_sim.v) |
Xilinx | 12/02/1999 | 3545.64 Kb | ZIP | wcd00ea4.zip |
| (.OUT (VCC); X_ZERO GND_149 (.OUT (GND); X_PD NGD2VER_PD_110 (.OUT (GSR) ); X_PD NGD2VER_PD_112 (.OUT (GTS) ); endmodule www.datasheetarchive.com/download/95835256-987151ZC/wcd02ea3.z |
Xilinx | 13/07/1998 | 11223.63 Kb | Z | wcd02ea3.z |
| (.OUT (VCC); X_ZERO GND_149 (.OUT (GND); X_PD NGD2VER_PD_110 (.OUT (GSR) ); X_PD NGD2VER_PD_112 (.OUT (GTS) ); endmodule www.datasheetarchive.com/download/16152680-987153ZC/wcd02ea5.z |
Xilinx | 13/07/1998 | 5128.36 Kb | Z | wcd02ea5.z |
| (.OUT (VCC); X_ZERO GND_149 (.OUT (GND); X_PD NGD2VER_PD_110 (.OUT (GSR) ); X_PD NGD2VER_PD_112 (.OUT (GTS) ); endmodule www.datasheetarchive.com/download/67714387-987154ZC/wcd02ea6.zip (time_sim.v) |
Xilinx | 13/07/1998 | 3545.64 Kb | ZIP | wcd02ea6.zip |
| (.OUT (VCC); X_ZERO GND_149 (.OUT (GND); X_PD NGD2VER_PD_110 (.OUT (GSR) ); X_PD NGD2VER_PD_112 (.OUT (GTS) ); endmodule www.datasheetarchive.com/download/10929841-987152ZC/wcd02ea4.zip (time_sim.v) |
Xilinx | 13/07/1998 | 7683.96 Kb | ZIP | wcd02ea4.zip |
| (.OUT (VCC); X_ZERO GND_149 (.OUT (GND); X_PD NGD2VER_PD_110 (.OUT (GSR) ); X_PD NGD2VER_PD_112 (.OUT (GTS) ); endmodule www.datasheetarchive.com/download/56350136-985943ZC/wcd010c6.z |
Xilinx | 13/07/1998 | 13034.22 Kb | Z | wcd010c6.z |
| (.OUT (VCC); X_ZERO GND_149 (.OUT (GND); X_PD NGD2VER_PD_110 (.OUT (GSR) ); X_PD NGD2VER_PD_112 (.OUT (GTS) ); endmodule www.datasheetarchive.com/download/16736007-985939ZC/wcd010c4.z |
Xilinx | 13/07/1998 | 5128.36 Kb | Z | wcd010c4.z |
| (.OUT (VCC); X_ZERO GND_149 (.OUT (GND); X_PD NGD2VER_PD_110 (.OUT (GSR) ); X_PD NGD2VER_PD_112 (.OUT (GTS) ); endmodule www.datasheetarchive.com/download/74691760-985949ZC/wcd010c9.zip (time_sim.v) |
Xilinx | 13/07/1998 | 7683.96 Kb | ZIP | wcd010c9.zip |
| (.OUT (VCC); X_ZERO GND_149 (.OUT (GND); X_PD NGD2VER_PD_110 (.OUT (GSR) ); X_PD NGD2VER_PD_112 (.OUT (GTS) ); endmodule www.datasheetarchive.com/download/8931125-985945ZC/wcd010c7.zip (time_sim.v) |
Xilinx | 13/07/1998 | 3545.64 Kb | ZIP | wcd010c7.zip |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| PD112 | TRW, Inc. | Silicon Rectifier | |