RJP30E3DPK-M0#T0
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Renesas Electronics Corporation
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Insulated-Gate Bipolar Transistors (IGBT) |
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RJP30E2DPP-M0#T2
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Renesas Electronics Corporation
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Insulated-Gate Bipolar Transistors (IGBT), TO-220FL, /Tube |
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RJP30E3DPP-M0#T2
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Renesas Electronics Corporation
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Insulated-Gate Bipolar Transistors (IGBT), TO-220FL, /Tube |
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RJP30E2DPK-M0#T0
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Renesas Electronics Corporation
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Insulated-Gate Bipolar Transistors (IGBT), TO-3PSG, /Tube |
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SiT5356AECFP-30E0-19.200000
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SiTime
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1 to 60 MHz, Stratum 3 Super-TCXO |
Datasheet
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SiT5356AECFP-30E0-48.000000
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SiTime
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1 to 60 MHz, Stratum 3 Super-TCXO |
Datasheet
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