NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SPW47N60C3 SPW47N60C3 Target data sheet Cool MOSTM=Power Transistor = C OLMOS O Power Semiconductors Feature ·=New revolutionary high voltage technology Product Summary · Worldwide best R DS(on) in TO 220 · Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.07 ·=Periodic avalanche rated ID 47 A · Extreme dv/dt rated P-TO247 ·=Ultra low effective capacitances ·=Improved noise immunity Type Package Ordering Code Marking SPW47N60C3 SPW47N60C3 P-TO247 ... | Original |
6 pages, |
P-TO-247 47n60c3 infineon 2449 SPW47N60C3 47N60C P-TO247 47n60c3 SPW47N60C3 abstract |
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| Abstract: D219A capacitances P-TO247 · Improved transconductance Type Package Ordering Code Marking SPW35N60C3 SPW35N60C3 P-TO247 Q67040-S4673 Q67040-S4673 35N60C3 35N60C3 Maximum ratings, at T j=25 °C, unless otherwise specified , characteristics P-TO247: Outline Dimensions in mm Rev. 1.0 page 9 2004-05-10 SPW35N60C3 SPW35N60C3 ... | Original |
10 pages, |
SPW35N60C3 Q67040-S4673 D219 35n60 35n60c3 SPW35N60C3 abstract |
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| Abstract: capacitances P-TO247 · Improved transconductance Type Package Ordering Code Marking SPW24N60C3 SPW24N60C3 P-TO247 Q67040-S4640 Q67040-S4640 24N60C3 24N60C3 Maximum ratings, at T j=25 °C, unless otherwise specified , page 8 2004-04-27 SPW24N60C3 SPW24N60C3 Definition of diode switching characteristics P-TO247: Outline ... | Original |
10 pages, |
SPW24N60C3 24N60C3 Q67040-S4640 SPW24N60C3 abstract |
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| Abstract: VDS ID SPW47N60S5 SPW47N60S5 600 V 47 A RDS(on) Package Marking Ordering Code 0.07 P-TO247 , SPW47N60S5 SPW47N60S5 P-TO247 [mm] symbol A B C D E F G H K L M N P Q Semiconductor Group min ... | Original |
10 pages, |
SPW47N60S5 47n60 47N60S5 SPW47N60S5 abstract |
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| Abstract: SPW47N60S5 SPW47N60S5 Final data Cool MOSTM Power Transistor VDS · Worldwide best RDS(on) in TO 247 0.07 ID · New revolutionary high voltage technology V RDS(on) Feature 600 47 A · Ultra low gate charge P-TO247 · Periodic avalanche rated · Extreme dv/dt rated · Ultra low effective capacitances · Improved transconductance Type SPW47N60S5 SPW47N60S5 Package P-TO247 , Page 9 2003-07-02 SPW47N60S5 SPW47N60S5 Final data P-TO-247-3-1 15.9 5.03 20° 5° D 5.94 ... | Original |
11 pages, |
SPW47N60S5 P-TO247 47N60S5 47N60 SPW47N60S5 abstract |
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| Abstract: RDS(on) Package Marking Ordering Code 0.38 P-TO247 11N60S5 11N60S5 Q67040-S4239 Q67040-S4239 , Preliminary data SPW11N60S5 SPW11N60S5 P-TO247 [mm] symbol A B C D E F G H K L M N P Q ... | Original |
10 pages, |
SPW11N60S5 11N60S5 siemens 350 98 SPW11N60S5 abstract |
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| Abstract: SPW20N60S5 SPW20N60S5 Preliminary data Cool MOSTM=Power Transistor = C OLMOS O Power Semiconductors ·=New revolutionary high voltage technology · Ultra low gate charge Product Summary ·=Periodic avalanche rated VDS @ Tjmax 650 V · Extreme dv/dt rated RDS(on) 0.19 ·=Optimized capacitances ID 20 A P-TO247 ·=Improved noise immunity ·=Former development designation: SPWx1N60S5 Type Package Ordering Code SPW20N60S5 SPW20N60S5 P-TO247 Q67040-S4238 Q67040-S4238 D,2 ... | Original |
9 pages, |
transistor 20N60s5 SPW20N60S5 20n60 20N60S5 TO247 20n60s5 SPW20N60S5 equivalent SPW20N60S5 abstract |
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| Abstract: SPW47N60S5 SPW47N60S5 Preliminary data Cool MOSTM=Power Transistor = C OLMOS O Power Semiconductors ·=New revolutionary high voltage technology Product Summary · Worldwide best RDS(on) in TO 247 · Ultra low gate charge VDS @ Tjmax 650 V ·=Periodic avalanche rated RDS(on) 0.07 · Extreme dv/dt rated ID 47 A P-TO247 ·=Optimized capacitances ·=Improved , SPW47N60S5 SPW47N60S5 P-TO247 Q67040-S4240 Q67040-S4240 D,2 Marking 47N60S5 47N60S5 G,1 S,3 Maximum Ratings,at Tj = 25 °C ... | Original |
9 pages, |
SPW47N60S5 P-TO247 47N60 47n60s5 to247 47N60S5 SPW47N60S5 abstract |
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| Abstract: SPW11N60S5 SPW11N60S5 Preliminary data Cool MOSTM=Power Transistor = C OLMOS O Power Semiconductors ·=New revolutionary high voltage technology · Ultra low gate charge Product Summary ·=Periodic avalanche rated VDS @ Tjmax 650 V · Extreme dv/dt rated RDS(on) 0.38 ·=Optimized capacitances ID 11 A P-TO247 ·=Improved noise immunity ·=Former development designation: SPWx2N60S5 Type Package Ordering Code SPW11N60S5 SPW11N60S5 P-TO247 Q67040-S4239 Q67040-S4239 D,2 ... | Original |
9 pages, |
SPW11N60S5 11N60S5 11N60S5 equivalent SPW11N60S5 abstract |
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| Abstract: RDS(on) Package Marking Ordering Code 0.19 P-TO247 20N60S5 20N60S5 Q67040-S4238 Q67040-S4238 , 60 80 100 nC Qg 140 8 03 / 1999 Preliminary data SPW20N60S5 SPW20N60S5 P-TO247 ... | Original |
10 pages, |
SPW20N60S5 20n60s5 power transistor SPW20N60S5 equivalent 20n60s5 20N60S5 TO247 SPW20N60S5 abstract |
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| Abstract: Hola1 H A Retaining springs for transistors art. no. THFU 1 transistor- suitable for spring force housing heatsinks [N] TO 218 TO 220 TO 3 P TO 247 TO 248 SK 480 SK 481 SK 482 SK 483 SK 487 SK 489 SK 490 SK 492 SK 495 SK 499 SK 512 SK 514 material H B C D 60 � RS E THFU 2 THFU 3 TO 218 TO 220 TO 3 P TO 247 TO 248 SK 480 SK 481 SK 482 SK 483 SK 487 SK 489 SK 490 SK 492 SK 495 SK 499 SK 512 SK 514 TO 218 TO ... | Original |
1 pages, |
Heatsinks to-220 TO-220 TO-218 datasheet F 514 TO-247 482 transistor Heatsinks Heatsinks sk 489 b 514 transistor datasheet abstract |
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| Abstract: SPW47N60S5 SPW47N60S5 Final data Cool MOSTM Power Transistor · New revolutionary high voltage technology Product Summary · Worldwide best RDS(on) in TO 247 · Ultra low gate charge VDS @ Tjmax 650 V · Periodic avalanche rated RDS(on) 0.07 · Extreme dv/dt rated ID 47 A P-TO247 · Optimized capacitances · Improved noise immunity Type Package Ordering Code SPW47N60S5 SPW47N60S5 P-TO247 Q67040-S4240 Q67040-S4240 D,2 Marking 47N60S5 47N60S5 G,1 S,3 Maximum Ratings ... | Original |
9 pages, |
SPW47N60S5 47n60s5 SPW47N60S5 abstract |
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| Abstract: SPW20N60S5 SPW20N60S5 Final data Cool MOSTM Power Transistor · New revolutionary high voltage technology · Ultra low gate charge Product Summary · Periodic avalanche rated VDS @ Tjmax 650 V · Extreme dv/dt rated RDS(on) 0.19 · Optimized capacitances ID 20 A P-TO247 · Improved noise immunity Type Package Ordering Code SPW20N60S5 SPW20N60S5 P-TO247 Q67040-S4238 Q67040-S4238 D,2 Marking 20N60S5 20N60S5 G,1 S,3 Maximum Ratings, at Tc = 25°C, unless otherwise ... | Original |
9 pages, |
SPW20N60S5 20N60S5 TO247 SPW20N60S5 equivalent 20n60s5 SPW20N60S5 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| Infineon Technologies AG - Products - DUOPACK Infineon Homepage Company Information Investor Information Newsroom Products Solutions Careers Business & Support www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/param~52.htm |
Infineon | 19/10/2000 | 41.64 Kb | HTM | param~52.htm |
| Infineon Technologies AG - Products - DUOPACK Infineon Homepage Company Information Investor Information Newsroom Products Solutions Careers Business & Support www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/para~446.htm |
Infineon | 19/10/2000 | 41.64 Kb | HTM | para~446.htm |
| Infineon Technologies AG - Products - Fast IGBT Infineon Homepage Company Information Investor Information Newsroom Products Solutions Careers Business & Support www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/param~74.htm |
Infineon | 19/10/2000 | 41.74 Kb | HTM | param~74.htm |
| Infineon Technologies AG - Products - Fast IGBT Infineon Homepage Company Information Investor Information Newsroom Products Solutions Careers Business & Support www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/para~443.htm |
Infineon | 19/10/2000 | 41.74 Kb | HTM | para~443.htm |
| Workspace IGBTs Please select specifications! V CE (max) [V] www.datasheetarchive.com/files/infineon/search/search/wkspp~90.htm |
Infineon | 26/10/2000 | 6.89 Kb | HTM | wkspp~90.htm |
| Workspace Cool MOS Please select specifications! V DS (max) [V] www.datasheetarchive.com/files/infineon/search/search/wkspp~88.htm |
Infineon | 26/10/2000 | 7.18 Kb | HTM | wkspp~88.htm |
| Infineon Technologies AG - Products - CoolMOS(TM) 600V Infineon Homepage Company Information Investor Information Newsroom Products Solutions Careers Business & Support www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/para~429.htm |
Infineon | 19/10/2000 | 84.19 Kb | HTM | para~429.htm |
| Infineon Technologies AG - Products - CoolMOS(TM) 600V Infineon Homepage Company Information Investor Information Newsroom Products Solutions Careers Business & Support www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/param~59.htm |
Infineon | 19/10/2000 | 84.19 Kb | HTM | param~59.htm |
| * Discrete Diode Electrical Parameters * * Package: TO-3P/TO-247AD * Schottky Barrier Rectifier *- * Pin1: Anode 1 * | Pin2: Cathode * | | Pin3: Anode 2 * | | | .SUBCKT MBR3060PT MBR3060PT MBR3060PT MBR3060PT 1 2 3 D0 1 2 SCHTK D1 3 2 SCHTK .MODEL SCHTK D + IS=4.6568e-07 N=1.0 RS=6.3564e-3 IKF=0.2451 + CJO=1.2985e-9 M=0.53 VJ=0.44 www.datasheetarchive.com/files/fairchild/simulation-models/mbr3060pt.lib |
Fairchild | 22/10/2012 | 0.69 Kb | LIB | mbr3060pt.lib |
| POWERSIP \m GEHÄUSE &C&F &CSeite &P LF041 LF041 LF041 LF041 Power Transistors LF041 LF041 LF041 LF041 Power Transistors H549 H747 H546 H547 H548 D925 E111 E112 E006 E012 F043 E017 E106 E149 E257 E257 E257 E267 E336 E337 E347 E364 E366 E368 E370 E370 E370 E370 E371 E371 E371 E371 E372 E372 E372 E372 E372 E372 E373 E373 E373 E373 E374 E374 E374 E374 E377 E379 E384 E384 E384 E384 E384 E386 E386 E386 E386 E386 E386 E386 E387 E390 E390 E390 E390 E390 E390 E391 E391 E391 E391 E391 E391 E391 E393 E393 E393 E393 E393 E394 E394 E394 www.datasheetarchive.com/download/95257431-169543ZC/powersip.zip (powersip.xls) |
Infineon | 07/09/2000 | 242.21 Kb | ZIP | powersip.zip |