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P-Channel Logic Level PowerTrenchTM MOSFET

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: FDS4435 FAIRCHILD S E M I C O N D U C T O R TM October 1998 FDS4435 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge tor superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery -
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fds4435 mosfet 2197f ds4435 Power MOSFET, Fairchild S4435 DS4435
Abstract: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has , MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM Fairchild Semiconductor
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858P SOIC-16
Abstract: January 2001 Si4425DY Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features -11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V, RDS(ON) = 0.020 @ VGS = -4.5 V. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for , SeriesTM FAST® FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet Fairchild Semiconductor
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4425DY
Abstract: October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features -11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V, RDS(ON) = 0.020 @ VGS = -4.5 V. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for , exhaustive list of all such trademarks. ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM Fairchild Semiconductor
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Abstract: February 1999 FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. -6 A, -30 V. RDS(ON) = 0.032 @ VGS = -10 V , MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM Fairchild Semiconductor
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Abstract: February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook , SeriesTM FAST® FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet Fairchild Semiconductor
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Abstract: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. -3.2 A, -20 V. RDS(ON) = 0.050 @ VGS = -4.5 V, RDS(ON) = 0.070 @ VGS = -2.5 V. These P-Channel Logic Level , of all such trademarks. ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM Quiet Fairchild Semiconductor
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Abstract: FDR8508P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Load switch DC/DC converter Motor driving D1 RDS(ON) = 0.052 , POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM Fairchild Semiconductor
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Abstract: Si4435DY May 1999 DISTRIBUTION GROUP* Si4435DY P-Channel Logic Level PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features -8.8 A, -30 V. RDS Fairchild Semiconductor
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7w66 4435DY
Abstract: Si4435DY P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Low gate charge (17nC typical). This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Fast Fairchild Semiconductor
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D665
Abstract: January 2007 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features -11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V, RDS(ON) = 0.020 @ VGS = -4.5 V. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Low gate charge (30nC typical). High performance trench technology for Fairchild Semiconductor
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Abstract: FDC6506P Dual P-Channel Logic Level PowerTrenchTM MOSFET General Description Features These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. · -1.8 A, -30 V. RDS(on) = 0.170 @ VGS = -10 V RDS(on) = 0.280 @ , ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM Fairchild Semiconductor
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dual mosfet marking 506
Abstract: February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC Fairchild Semiconductor
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Abstract: FDS6609A March 1999 ADVANCE INFORMATION FDS6609A P-Channel Logic Level PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features · -6.3 A, -30 V. RDS(ON Fairchild Semiconductor
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FDS66
Abstract: February 1999 FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. -6 A, -30 V. RDS(ON) = 0.032 â"¦ @ VGS = -10 V, RDS(ON) = 0.045 â"¦ @ VGS = -4.5 V. These devices are well suited for notebook computer Fairchild Semiconductor
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Abstract: February 1999 FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench , Quality and reliability e-mail this datasheet Design center Dual P-Channel Logic Level PowerTrench , General description These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor , GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM Quiet SeriesTM Fairchild Semiconductor
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NF073
Abstract: FDS4435A P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications , POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM Fairchild Semiconductor
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CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Abstract: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has , POPTM PowerTrenchTM QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 ACExTM Fairchild Semiconductor
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Abstract: February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook , . ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM Fairchild Semiconductor
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FDC633N r rca 631
Abstract: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been , FAST® FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet Fairchild Semiconductor
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