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MRF1513T1 Freescale Semiconductor TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,2A I(D),PLD ri Buy
MRF1518T1 Freescale Semiconductor TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,4A I(D),PLD ri Buy
MRF19060S Freescale Semiconductor TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391BVAR ri Buy

P-Channel Logic Level PowerTrenchTM MOSFET

Catalog Datasheet Results Type PDF Document Tags
Abstract: FDS4435 FDS4435 FAIRCHILD S E M I C O N D U C T O R TM October 1998 FDS4435 FDS4435 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge tor superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery ... OCR Scan
datasheet

4 pages,
221.74 Kb

Power MOSFET, Fairchild FDS4435 ds4435 fds4435 mosfet FDS4435 abstract
datasheet frame
Abstract: February 1999 FDR858P FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has , MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 ... Original
datasheet

5 pages,
112.12 Kb

SOIC-16 FDR858P 858P FDR858P abstract
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Abstract: November 1998 FDR8308P FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. -3.2 A, -20 V. RDS(ON) = 0.050 @ VGS = -4.5 V, RDS(ON) = 0.070 @ VGS = -2.5 V. These P-Channel Logic Level , of all such trademarks. ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM Quiet ... Original
datasheet

5 pages,
107.81 Kb

SOIC-16 FDR8308P FDR8308P abstract
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Abstract: October 1998 FDS6675 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features -11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V, RDS(ON) = 0.020 @ VGS = -4.5 V. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for , exhaustive list of all such trademarks. ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM ... Original
datasheet

5 pages,
111.29 Kb

SOIC-16 FDS6675 FDS6675 abstract
datasheet frame
Abstract: February 1999 FDC658P FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook , SeriesTM FAST® FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet ... Original
datasheet

5 pages,
102.44 Kb

SOIC-16 FDC658P FDC658P abstract
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Abstract: January 2001 Si4425DY Si4425DY Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features -11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V, RDS(ON) = 0.020 @ VGS = -4.5 V. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for , SeriesTM FAST® FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet ... Original
datasheet

5 pages,
109.16 Kb

SOIC-16 Si4425DY Si4425DY abstract
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Abstract: February 1999 FDS6975 FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. -6 A, -30 V. RDS(ON) = 0.032 @ VGS = -10 V , exhaustive list of all such trademarks. ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM ... Original
datasheet

5 pages,
112.9 Kb

SOIC-16 FDS6975 FDS6975 abstract
datasheet frame
Abstract: FDC6506P FDC6506P Dual P-Channel Logic Level PowerTrenchTM MOSFET General Description Features These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. · -1.8 A, -30 V. RDS(on) = 0.170 @ VGS = -10 V RDS(on) = 0.280 @ , ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 ... Original
datasheet

5 pages,
61.25 Kb

FDC6506P dual mosfet marking 506 FDC6506P abstract
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Abstract: FDR8508P FDR8508P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Load switch DC/DC converter Motor driving D1 RDS(ON) = 0.052 , SeriesTM FAST® FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet ... Original
datasheet

5 pages,
127.21 Kb

FDR8508P FDR8508P abstract
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Abstract: Si4435DY Si4435DY P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Low gate charge (17nC typical). This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Fast switching ... Original
datasheet

6 pages,
307.02 Kb

Si4435DY 7w66 Si4435DY abstract
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