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Part Manufacturer Description Datasheet BUY
TTL-LOGIC-DATABOOK Texas Instruments TTL-LOGIC-DATABOOK visit Texas Instruments
TPS1110DR Texas Instruments Single P-channel Logic-Level MOSFET 8-SOIC visit Texas Instruments
TPS1110D Texas Instruments Single P-channel Logic-Level MOSFET 8-SOIC visit Texas Instruments
CSD75211W1723 Texas Instruments 4.5A, 20V, 0.07ohm, P-CHANNEL, Si, POWER, MOSFET, 1.70 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, WAFER LEVEL-12 visit Texas Instruments
EL7222CS Intersil Corporation 2A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8, SO-8 visit Intersil
HS9-4424BRH-8 Intersil Corporation 2A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDFP16, CERAMIC, DFP-16 visit Intersil

P-Channel Logic Level PowerTrenchTM MOSFET

Catalog Datasheet MFG & Type PDF Document Tags

fds4435 mosfet

Abstract: ds4435 FDS4435 FAIRCHILD S E M I C O N D U C T O R TM October 1998 FDS4435 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge tor superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery
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fds4435 mosfet ds4435 2197f Power MOSFET, Fairchild S4435 DS4435

858P

Abstract: P-Channel Logic Level PowerTrenchTM MOSFET February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has , MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM
Fairchild Semiconductor
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858P P-Channel Logic Level PowerTrenchTM MOSFET SOIC-16 Single P-Channel, Logic Level, PowerTrench MOSFET

Si4425DY

Abstract: SOIC-16 January 2001 Si4425DY Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features -11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V, RDS(ON) = 0.020 @ VGS = -4.5 V. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for , SeriesTM FAST® FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet
Fairchild Semiconductor
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4425DY

FDS6675

Abstract: SOIC-16 October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features -11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V, RDS(ON) = 0.020 @ VGS = -4.5 V. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for , exhaustive list of all such trademarks. ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM
Fairchild Semiconductor
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FDS6975

Abstract: SOIC-16 February 1999 FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. -6 A, -30 V. RDS(ON) = 0.032 @ VGS = -10 V , MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM
Fairchild Semiconductor
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FDC658P

Abstract: SOIC-16 February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook , SeriesTM FAST® FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet
Fairchild Semiconductor
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FDR8308P

Abstract: SOIC-16 November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. -3.2 A, -20 V. RDS(ON) = 0.050 @ VGS = -4.5 V, RDS(ON) = 0.070 @ VGS = -2.5 V. These P-Channel Logic Level , of all such trademarks. ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM Quiet
Fairchild Semiconductor
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FDR8508P

Abstract: FDR8508P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Load switch DC/DC converter Motor driving D1 RDS(ON) = 0.052 , POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
Fairchild Semiconductor
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7w66

Abstract: Si4435DY May 1999 DISTRIBUTION GROUP* Si4435DY P-Channel Logic Level PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features -8.8 A, -30 V. RDS
Fairchild Semiconductor
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7w66 4435DY

7w66

Abstract: D665 Si4435DY P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Low gate charge (17nC typical). This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Fast
Fairchild Semiconductor
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D665

FDS6675

Abstract: SOIC-16 January 2007 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features -11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V, RDS(ON) = 0.020 @ VGS = -4.5 V. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Low gate charge (30nC typical). High performance trench technology for
Fairchild Semiconductor
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FDC6506P

Abstract: dual mosfet marking 506 FDC6506P Dual P-Channel Logic Level PowerTrenchTM MOSFET General Description Features These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. · -1.8 A, -30 V. RDS(on) = 0.170 @ VGS = -10 V RDS(on) = 0.280 @ , ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM
Fairchild Semiconductor
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dual mosfet marking 506
Abstract: February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC Fairchild Semiconductor
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Abstract: FDS6609A March 1999 ADVANCE INFORMATION FDS6609A P-Channel Logic Level PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features · -6.3 A, -30 V. RDS(ON Fairchild Semiconductor
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FDS66
Abstract: February 1999 FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. -6 A, -30 V. RDS(ON) = 0.032 â"¦ @ VGS = -10 V, RDS(ON) = 0.045 â"¦ @ VGS = -4.5 V. These devices are well suited for notebook computer Fairchild Semiconductor
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Abstract: February 1999 FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench , Quality and reliability e-mail this datasheet Design center Dual P-Channel Logic Level PowerTrench , General description These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor , GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM Quiet SeriesTM Fairchild Semiconductor
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NF073

FDS4435A

Abstract: CBVK741B019 FDS4435A P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications , POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
Fairchild Semiconductor
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CBVK741B019 F011 F63TNR F852 FDS9953A L86Z

858P

Abstract: F63TNR February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has , POPTM PowerTrenchTM QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 ACExTM
Fairchild Semiconductor
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r rca 631

Abstract: CBVK741B019 February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook , . ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM
Fairchild Semiconductor
Original
r rca 631 FDC633N
Abstract: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been , FAST® FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet Fairchild Semiconductor
Original
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