NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: assembled and tested surface-mount board. This EV kit includes an on-board p-channel FET for , , J7 3 3-pin headers Q1 1 p-channel FET IRF IRFR9110 IRFR9110 R1, R6 2 150 ±1% , p-channel FET provides reverse-battery protection. Reverse-Battery Protection To prevent a reversed , the diode adds an undesirable voltage drop to the circuit, a p-channel FET is often used instead. The MAX6791 MAX6791 EV kit includes a p-channel FET; to use this feature, connect input power to IN2. To ... | Original |
6 pages, |
TACT SWITCH SPST IRF P-Channel FET IRFR9110 MAX6791 MAX6791EVKIT MAX6792 MAX6796 SMBJ51A IRF 4020 IRF P-Channel FET 100v irf9110 MAX6791 abstract |
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| Abstract: [REF: MIL-S-19500/599 MIL-S-19500/599] -100 Volt, 1.4 Ohm (P-Channel) The HEXFET® technology is the key to , transconductance; superior reverse energy and diode recovery dv/dt capability. The P-Channel HEXFETs are designed , paralleling, and excellent temperature stability. P-Channel HEXFETs are intended for use in power stages , Automatic Insertion â- Lightweight â- Simple Drive Requirements â- Ease of Paralleling â- 4 P-Channel , Source-Drain Diode Ratings and Characteristics for Each P-Channel Chip Parameter Min. Typ. Max. Units Test ... | OCR Scan |
7 pages, |
JANTXV2N7335 IRFG9110 IRFG110 I-242 I-239 2N7335 JANTXSN7335 MIL-S-19500/599 IRFG9110 abstract |
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| Abstract: POLARITY N: N-Channel P: P-Channel VOLTAGE RATING 05 = 50V, 10 = 100V, 20 = 200V, etc. FEATURE , ) POLARITY N: N-Channel P: P-Channel VOLTAGE RATING 05 = 50V, 10 = 100V, 20 = 200V, etc. FEATURE , : P-Channel Device IRFR221 IRFR221 150V, 4.6A, 0. 800 RFD7N10LESM RFD7N10LESM 100V, 7A, 0.300 IRFR220 IRFR220 200V, 4.6A, 0. 800 , , P-Channel, 30V, Surface Mount MOSFET CURRENT RATING 1 = 1A, 10 = 10A, 25 = 25A, etc. PACKAGE , , 30A, 0.065 21A TO 30A NOTE: P-Channel Device RF1S9640SM RF1S9640SM (Note) 200V, 11A, 0.500 RF1S530SM RF1S530SM ... | Original |
8 pages, |
RF1K49093 MOSFET 1000v 30a IRF P CHANNEL MOSFET 10a MOSFET N 30V 30A 252 mosfet p channel irf IRF P CHANNEL MOSFET TO-252 n channel mosfet LOGIC 100v 70A p channel mosfet LOGIC 100v 70A P-channel 200V mos fet IRF P-Channel FET 100v IRF P CHANNEL MOSFET D-PAK IRF P CHANNEL MOSFET 100v datasheet abstract |
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| Abstract: VGS= -20V -16V -14V -12V -10V -9V -8V SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET , CHARACTERISTICS VGS= -20V -16V -14V -12V -10V -9V -8V SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3310F ZVN3310F MR S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source , -100V ID= 0.2A -2 0 1.8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VGS= VDS ID= , ID=-1mA, VDS= VGS IGSS -20 nA VGS=± 20V, VDS=0V IDSS -1 -50 uA uA VDS=-100V ... | Original |
2 pages, |
zvp3310f ZVP3310 ZVN3310F PARTMARKING mr P-Channel FET 100v ZVP3310F ZVP3310F abstract |
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| Abstract: stage. Each pair is consists of a P-channel and an N-channel MOSFET. In each pair of MOSFETs, the P-FET , pins, and the P-channel damping output swings from 0V to � on the DMPO pin. HV732 HV732 can generate �0V , voltage output P-channel and N-channel MOSFETs. They are connected to high voltage outputs. PCB designers , Block Diagram +1.8V to 3.3V +9.0V to 12V VLL AVDD VDD PDR +100V 0 to -100V VPP , CLAMP RGNDP VLN AGND GND RGNDN NDR NGATE DMPO DMPI VNN -5.0V 0 to -100V 1 HVOUT ... | Original |
8 pages, |
drive control damp BAV99 DC 5V to DC 100V CIRCUIT DIAGRAM ultrasound "Piezo Transducers" ultrasound probe medical ultrasound coaxial cable ultrasound block diagram ultrasound 10MHz ultrasound pulser ic logic pulser ultrasound piezo pulser circuit HV732DB1 HV732 HV732DB1 abstract |
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| Abstract: MOSFETs in the output stage. Each pair is consists of a P-channel and an N-channel MOSFET. In each pair , 9V~12V on PDR and NDR pins, and the P-channel damping output swings from 0V to � on the DMPO pin. , drains of the high voltage output P-channel and N-channel MOSFETs. They are connected to high voltage , Schematic Block Diagram +1.8V to 3.3V +9.0V to 12V VLL AVDD VDD PDR +100V 0 to -100V , -100V 1 HVOUT HVOUT RL 220pF 1K HV732DB1 HV732DB1 The PCB Layout Techniques Testing the ... | Original |
8 pages, |
TP10 BAV99 HV732 ultrasound piezo pulser circuit HV732DB1 piezo cable P-Channel FET 100v logic pulser ultrasound transducer circuit driver ultrasound transducer high power driver 10MHz ultrasound pulser HV732DB1 abstract |
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| Abstract: P-channel and an N-channel MOSFET. In each pair of MOSFETs, the P-FET and N-FET are designed to have the , output of the driver can swing from 0 to 9~12V on PDR and NDR pins, and the P-channel damping output , of the slab at the bottom of the chip are the drains of the high voltage output P-channel and , 3.3V +9.0V to 12V VLL AVDD VDD PDR +100V 0 to -100V VPP PGATE VSUB EN PIN , AGND GND RGNDN NDR NGATE DMPO DMPI VNN -5.0V 0 to -100V 1 HVOUT HVOUT RL ... | Original |
8 pages, |
TP10 BAV99 HV732 HV732DB1 Piezoelectric ultrasound Transducer FET 100v pair ultrasound 10MHz ultrasound piezo pulser circuit ultrasound transducer 10MHz mems ultrasound transducers logic pulser ultrasound probe medical ultrasound transducer circuit driver HV732DB1 abstract |
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| Abstract: Volt, 1.4 Ohm (P-Channel) The HEXFET® technology is the key to International Rectifier's advanced line , reverse energy and diode recovery dv/dt capability. The P-Channel HEXFETs are designed for application , temperature stability. P-Channel HEXFETs are intended for use in power stages where complementary symmetry , Drive Requirements â- Ease of Paralleling â- 4 P-Channel Co-Packaged HEXFETs CASE STYLE AND DIMENSIONS , Source-Drain Diode Ratings and Characteristics for Each P-Channel Chip Parameter Min. Typ. Max. Units Test ... | OCR Scan |
7 pages, |
JANTXV2N7335 JANTX2N7335 IRFG9110 IRFG110 2N7335 MIL-S-19500/599 IRFG9110 abstract |
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| Abstract: (P-Channel) The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET , Requirements â- Ease of Paralleling â- 2 N-Channel/2 P-Channel Co-Packaged HEXFETs CASE STYLE AND DIMENSIONS , n-Channel P-Channel Units â- d @ vqs - ±10V, TC - 25°C Continuous Drain Current 1.0 -0.75 id @ vgs - ±10V , Characteristics For Each P-Channel Chip @ tj = 25°c (unless otherwise specified) Parameter Min. Typ. Max. Units , Source-Drain Diode Ratings and Characteristics for Each P-Channel Chip Parameter Min. Typ. Max. Units Test ... | OCR Scan |
14 pages, |
tp 26c JANTX2N7336 IRFG6110 436D JANTXV2N7336 2N7336 IRFGG110 JANTXVSN7336 IRFGG110 abstract |
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| Abstract: Since the output has a true complementary MOS configuration, either the P-channel or N-channel MOSFET can be turned on at a time. When the output P-channel FET is turned on, the capacitive load starts to , the IC. As soon as the P-channel transistor turns on, the load starts to charge up. Initially, the drain-to-source voltage is at maximum value, because VOUT = 0V and VDS = VPP Â VOUT . This P-channel transistor , source current of the P-channel transistor and C is the load capacitance. Assuming a capacitive load of ... | Original |
6 pages, |
2N3906 mosfet p-channel 300v piezo head of inkjet piezo print head print Head Ink Jet Driver 2N3904 TP2540N8 TN2540N8 push-pull converter 80V output lm340 12 in5245 dc Regulator in5819 IN4002 voltage direction datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| -Mode Vertical DMOS FETs TP0606 TP0606 TP0606 TP0606 TP0610 TP0610 TP0610 TP0610 -60, -100V 3.5 ohms P-Channel Enhancement TP2506 TP2506 TP2506 TP2506 TP2510 TP2510 TP2510 TP2510 -60, -100V 3.5 ohms P-Channel Enhancement-Mode Vertical DMOS FETs -Mode Vertical DMOS FETs TN0106 TN0106 TN0106 TN0106 TN0110 TN0110 TN0110 TN0110 60,100V 3 ohms N-Channel Enhancement-Mode Vertical -Mode Vertical DMOS FETs TN2506 TN2506 TN2506 TN2506 TN2510 TN2510 TN2510 TN2510 60, 100V 1.5 ohms N-Channel Enhancement -Mode Vertical DMOS FETs TP0102 TP0102 TP0102 TP0102 TP0104 TP0104 TP0104 TP0104 -20, -40V 4 ohms P-Channel Enhancement www.datasheetarchive.com/files/scantec/recycled/de4026.htm |
Scantec | 22/01/1997 | 10.84 Kb | HTM | de4026.htm |
| P-Channel Power MOSFETs 2N6804 2N6804 2N6804 2N6804 11.0A, 100V, 0.300 ohm, Avalanche Rated, P-Channel Power MOSFET (1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS) 2N6849 2N6849 2N6849 2N6849 6.5A, 100V, 0.300 ohm, Avalanche Rated, P-Channel Power MOSFET (1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS) 2N6895 2N6895 2N6895 2N6895 1.2A, 100V, 3.650 ohm, P-Channel Power MOSFET (1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS) 2N6896 2N6896 2N6896 2N6896 6.0A, 100V, 0.600 ohm, P-Channel Power MOSFET (1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS) 2N6897 2N6897 2N6897 2N6897 12.0A, 100V, 0.300 ohm, P-Channel Power MOSFET (1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS www.datasheetarchive.com/files/harris/families/pwr.htm |
Harris | 15/08/1997 | 90.49 Kb | HTM | pwr.htm |
| FET Switch 100 V, 800 mÙ , N-Channel, TSOP-6 NUD3048/D NUD3048/D NUD3048/D NUD3048/D (48.0kB) 5 100 B) 0 100 Power MOSFET -20 V, -3.0 A, Dual P-Channel ChipFET™ NTHD4401 NTHD4401 NTHD4401 NTHD4401 Power MOSFET -20 V, -4.1 A Dual P-Channel ChipFET™ NTHD4102P/D NTHD4102P/D NTHD4102P/D NTHD4102P/D (64.0kB) 5 100 /D (141.0kB) 4 100 Power MOSFET -20 V, -5.3 A, Single P-Channel ChipFET .7 A, Single P-Channel ChipFET¿ NTHS4101P/D NTHS4101P/D NTHS4101P/D NTHS4101P/D (59.0kB) 3 100 www.datasheetarchive.com/files/on-semiconductor/taxonomy/fets.htm |
On Semiconductor | 27/09/2007 | 87.91 Kb | HTM | fets.htm |
| -channel, TO220 RFD14N06 RFD14N06 RFD14N06 RFD14N06 - 60V, 0.100mohm, N-channel, TO247 IRF540 IRF540 IRF540 IRF540 - HGTP14N40 HGTP14N40 HGTP14N40 HGTP14N40 - 100V, 14A IGBT, TO220 TRANSMISSION IRF540 IRF540 IRF540 IRF540 - 100V, 0.077mohm, N-channel, TO220 CRUISE 70N06SM 70N06SM 70N06SM 70N06SM - RFD16N06LESM RFD16N06LESM RFD16N06LESM RFD16N06LESM - RFP15N08L RFP15N08L RFP15N08L RFP15N08L - RFD8P05SM RFD8P05SM RFD8P05SM RFD8P05SM - 50V, 0.300 mohm, P-channel and IGBTs manufactured for automotive applications are designed to interface with the Harris FET www.datasheetarchive.com/files/harris/auto/fetigbts.htm |
Harris | 15/08/1997 | 4.24 Kb | HTM | fetigbts.htm |
| , Level-1/2/3 PSPICE Library for OptiMOS p-Channel Transistors .lib "infineon_pfet_60.lib" ; Infineon library, Level-1 / 3 PSPICE Library for PFET p-Channel Transistors .lib "infineon " ; Infineon library, Level 1/3 PSPICE Library for SFET 100V n-Channel Transistors .lib "infineon _diode.lib" ; Philips Semiconductors diodes .lib "phil_fet.lib" ; Philips Semiconductors mosfets .lib .lib" ; Zetex power transistor, fets .lib "infineon_bsx.lib" ; Infineon library, small signal transistors www.datasheetarchive.com/files/spicemodels/misc/vendor.lib |
Spice Models | 07/08/2009 | 5.96 Kb | LIB | vendor.lib |
| BSH201 BSH201 BSH201 BSH201 - P-channel enhancement mode MOS transistor BSH202 BSH202 BSH202 BSH202 - P-channel enhancement mode MOS transistor BSH203 BSH203 BSH203 BSH203 - P-channel enhancement mode MOS transistor BSH205 BSH205 BSH205 BSH205 - P-channel enhancement mode MOS transistor BSH207 BSH207 BSH207 BSH207 - P-channel enhancement mode MOS transistor www.datasheetarchive.com/files/philips/catalog/listing/30928-v2.html |
Philips | 01/06/2005 | 587.72 Kb | HTML | 30928-v2.html |
| 2N7002 2N7002 2N7002 2N7002 - N-channel TrenchMOS(tm) FET 2N7002E 2N7002E 2N7002E 2N7002E - N-channel TrenchMOS(tm) FET 2N7002F 2N7002F 2N7002F 2N7002F - N-channel TrenchMOS FET 2N7002K 2N7002K 2N7002K 2N7002K - Trenchmos (tm) logic level FET BF1100 BF1100 BF1100 BF1100 - Dual-gate MOS-FETs www.datasheetarchive.com/files/philips/catalog/listing/27046-v2.html |
Philips | 01/06/2005 | 903.08 Kb | HTML | 27046-v2.html |
| Volt 35M Amp 220 ohm Dep-Mode P-Channel J-FET 05-10-1991 * .MODEL MN156 MN156 MN156 MN156 PMOS (LEVEL=1 Amp 400 ohm Enh-Mode P-Channel MOS-FET 04-08-1991 * Motorola * .MODEL VN10LE VN10LE VN10LE VN10LE NMOS ohm P-Channel Power MOS-FET 07-26-1990 * *SYM=SCR .SUBCKT SN1595 SN1595 SN1595 SN1595 1 2 3 * TERMINALS ) * .MODEL DN4148 DN4148 DN4148 DN4148 D(RS=.8 CJO=4PF IS=7E-09 7E-09 7E-09 7E-09 N=2 VJ=.6V + TT=6E-09 6E-09 6E-09 6E-09 M=.45 BV=100V .38 Amp 2.5 ohm Enh-Mode N-Channel MOS-FET 02-11-1993 * Siliconix * *SYM www.datasheetarchive.com/files/siemens/tools/icap/disk3/demo.lib |
Siemens | 15/07/1994 | 9.27 Kb | LIB | demo.lib |
| -Channel Introduced 20 - 135 200 1.5 MTDF1N02HD MTDF1N02HD MTDF1N02HD MTDF1N02HD Dual N-Channel Introduced - 90 130 MTSF2P02HD MTSF2P02HD MTSF2P02HD MTSF2P02HD Single P-Channel Introduced - 160 190 2 MTSF1P02HD MTSF1P02HD MTSF1P02HD MTSF1P02HD Single P-Channel Introduced - 35 50 3 MTSF3N02HD MTSF3N02HD MTSF3N02HD MTSF3N02HD Single N (on) @ milliohms Vgs (volts) Id(cont) (amps) Vgs (volts) max Package 20 MMSF3P02Z MMSF3P02Z MMSF3P02Z MMSF3P02Z Single P-Channel 55 80 10 4.5 3 ±15 SO-8 20 MMSF4P01Z MMSF4P01Z MMSF4P01Z MMSF4P01Z Single P-Channel 70 90 4.5 2.7 4 ±8 SO-8 20 MMSF6N01Z MMSF6N01Z MMSF6N01Z MMSF6N01Z Single N-Channel 25 30 A TO-264 MTY100N10E MTY100N10E MTY100N10E MTY100N10E 100V 10mOhm 100A TO-264 IGBT Motorola introduces a series of 600 and www.datasheetarchive.com/files/motorola/design-n/ppd/html/tmos.htm |
Motorola | 25/11/1996 | 26.99 Kb | HTM | tmos.htm |
| =802P TT=432N) .ENDS * IR 100 Volt 7 Amp .25 ohm P-Channel Power MOS-FET 07 P TT=432N) .ENDS * IR 60 Volt 7 Amp .25 ohm P-Channel Power MOS-FET 07 =802P TT=432N) .ENDS * IR 100 Volt 6 Amp .3 ohm P-Channel Power MOS-FET 07 P TT=432N) .ENDS * IR 60 Volt 6 Amp .3 ohm P-Channel Power MOS-FET 07 .5 ohm N-Channel Power MOS-FET 09-15-1990 * *SRC=IRFAG20 IRFAG20 IRFAG20 IRFAG20;IRFAG20 IRFAG20 IRFAG20 IRFAG20;MOSFETs N;Power >100V www.datasheetarchive.com/files/spicemodels/misc/modelos/spice_complete/powmos.lib |
Spice Models | 18/04/2010 | 119.16 Kb | LIB | powmos.lib |