NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Circuits in One Package. • Output (Inverter Stage) : 3y5 20A/600V IGBT • Input (Converter Stage) : 3y5 20A/800V Silicon Rectifier • The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT Unit in mm 4-8.0±0.4 3-8.0+0.4 I E,u' P / N ni PI GU 6-3.0+0.4 E,v EW G Y E/ GV| Gvy| GX|Gy I-I-I-i"i I-I I-I i~i , TOSHIBA MIG20J805 MIG20J805 TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805 MIG20J805 , nA Collector Cut-off Current Ices Vce=600V, vGE=0 - - 1.0 mA Gate-Emitter Cut-off Voltage VGE ... | OCR Scan |
3 pages, |
P channel 600v 20a IGBT MIG20J805 MIG20J805 abstract |
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| Abstract: Brake Power Circuits and Thermistor in One Package. Output (Inverter Stage) : 30 20A/600V IGBT Input , TOSHIBA MIG20J906H/HA MIG20J906H/HA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J906H MIG20J906H , pF Switching Time Rise Time tr Vcc = 600V IC = 20A vGE15V rg = 620 (Note 1) - 0.10 0.20 jus , MIG20J906H MIG20J906H : 2-108E5A 2-108E5A MIG20J906HA MIG20J906HA : 2-108E6A 2-108E6A Weight : 190g EQUIVALENT CIRCUIT P PI o- Bc n m Ä 30-< Ä , , Non-Repetitive) Collector-Emitter Voltage VCES 600 V Gate-Emitter Voltage vges ±20 V IGBT Collector ... | OCR Scan |
9 pages, |
MIG20J906HA MIG20J906H P channel 600v 20a IGBT MIG20J906H/HA MIG20J906H/HA abstract |
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| Abstract: and Brake Power Circuits and Thermistor in One Package. • Output (Inverter Stage) : 30 20A/600V IGBT , TOSHIBA MIG20J906H/HA MIG20J906H/HA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J906H MIG20J906H , 1850 - pF Switching Time Rise Time tr VCC = 600V IC = 20A Vqe =± 15V Rq = 62i) (Note 1) - 0.10 0.20 , • Outline MIG20J906H MIG20J906H : 2-108E5A 2-108E5A MIG20J906HA MIG20J906HA : 2-108E6A 2-108E6A • Weight : 190g EQUIVALENT CIRCUIT P PI , , Non-Repetitive) IfSM 400 A Brake IGBT Collector-Emitter Voltage VCES 600 V Gate-Emitter Voltage vges ±20 V ... | OCR Scan |
9 pages, |
thermistor characteristic P channel 600v 20a IGBT MIG20J906HA MIG20J906H MIG20J906H/HA MIG20J906H/HA abstract |
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| Abstract: Package. • Output (Inverter Stage) : 30 20A/600V IGBT • Input (Converter Stage) : 30 20A/800V Silicon Rectifier • The Electrodes are Isolated from Case. Unit in mm 4-8.0±0.4 I E,U P / N NI PI GU 3-8.0±0.4 , TOSHIBA MIG20J805H MIG20J805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805H MIG20J805H HIGH POWER , VCE - 600V, Vge = 0 - - 1.0 mA Gate-Emitter Cut-off Voltage VGE (off) ic = 2mA, Vçe = 5v 5.0 - 8.0 V Collector-Emitter Saturation Voltage VCE (sat) ic = 20A, VQE = 15V - 2.10 2.60 V Input Capacitance Cies Vce = 10V ... | OCR Scan |
7 pages, |
toshiba a 200 inverter n channel 600v 20a IGBT MIG20J805H DC 300V to 15V converter MIG20J805H abstract |
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| Abstract: TOSHIBA MIG10J805 MIG10J805 TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT M I G 1 0 J 8 , Power Circuits in One Package. • Output (Inverter Stage) : 3y5 10A/600V IGBT • Input (Converter Stage) : 3y5 20A/800V Silicon Rectifier • The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT Unit in mm 4-8.0±0.4 3-8.0+0.4 I E,u' P / N ni PI GU 6-3.0+0.4 E,v EW G Y E/ GV| Gvy| GX|Gy I-i-i-i-i , nA Collector Cut-Off Current Ices Vce=600V, vGE=0 - - 1.0 mA Gate-Emitter Cut-Off Voltage VGE ... | OCR Scan |
3 pages, |
n channel 600v 20a IGBT MIG10J805 MIG10J805 abstract |
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| Abstract: on-state voltage drop of low voltage MOSFETS and IGBT devices rated at up to 600V [6] [7] [10]. This , more than 1400A/cm2. B. PT chip structure n+ p+ Collector Conventional Planar Gate IGBT Cell , silicon wafers that plague the NPT IGBT structure. n- C. Local Lifetime Control Rnn+ p , , "600v Trench IGBT in Comparison with Planar IGBT", ISPSD May 31, 1994 [7] T. Iida, et. al., "Low VCE , Characteristics of a 1200V PT IGBT With Trench Gate and Local Life Time Control Eric R. Motto ... | Original |
6 pages, |
P channel 600v 20a IGBT igbt 20A 1200v datasheet abstract |
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| Abstract: TOSHIBA MIG10Q805H MIG10Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10Q805H MIG10Q805H HIGH POWER , Package. • Output (Inverter Stage) : 30 10A/ 1200V IGBT • Input (Converter Stage) : 30 15A/1600V Silicon Rectifier • The Electrodes are Isolated from Case. Unit in mm 4-8.0±0.4 I E,U P / N NI PI GU , Capacitance Cies Vce = 10V, Vqe = 0, f= 1MHz - 1200 - pF Switching Time Rise Time tr Vcc = 600V IC = 10A , ) VCE - VGE COMMON EMITTER Tc = 25°C IC = 20A 10 4 8 12 16 GATE-EMITTER VOLTAGE VQE (V) 20 H O ... | OCR Scan |
7 pages, |
MIG10Q805H P channel 600v 20a IGBT MIG10Q805H abstract |
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| Abstract: IGBT with VG = 20V, and demonstrates the low on-resistance of the device (~0.084 at 20A). The on-resistance values of nearly all of the many IGBT fabricated to date have been less than 0.1 (at 20A) for , on a p+ substrate. In operation, the epitaxial region is conductivity modulated (by excess holes , MOSFETs of comparable size and voltage capability. AN8602 AN8602.1 G POLYSILICON K n+ p+ n+ n+ p+ pn- EPITAXIAL LAYER 16-18 CM p+ (100) SUBSTRATE A (A) STRUCTURE Introduction ... | Original |
4 pages, |
Pelly P channel 600v 30a IGBT INTERSIL 1981 mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT AN8602 8602 RECTIFIER AN8602 abstract |
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| Abstract: the many IGBT fabricated to date have been less than 0.1 (at 20A) for the 3mm square devices. Such , epi-layer doping and thickness of our present IGBT structures were designed for 600V, but VBF was limited , on a p+ substrate. In operation, the epitaxial region is conductivity modulated (by excess holes , MOSFETs of comparable size and voltage capability. n+ POLYSILICON n+ p+ n+ n+ p+ pn- EPITAXIAL LAYER 16-18 CM p+ (100) SUBSTRATE A REGION Vertical MOSFETs have become ... | Original |
3 pages, |
thyristor rca P channel 600v 30a IGBT ford igbt ED-26 diode mosfet controlled thyristor Pelly P channel 600v 20a IGBT AN8602 MOS Controlled Thyristor mos Turn-off Thyristor AN8602 abstract |
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| Abstract: ) characteristic of an IGBT with VG = 20V, and demonstrates the low on-resistance of the device (~0.084 at 20A). , n-epitaxial layer grown on a p+ substrate. In operation, the epitaxial region is conductivity modulated (by , power MOSFETs of comparable size and voltage capability. AN-7504 AN-7504 G POLYSILICON K n+ p+ n+ n+ p+ pn- EPITAXIAL LAYER 16-18 CM p+ (100) SUBSTRATE A (A) STRUCTURE , MOSFET except that the n-epitaxial Si layer is grown on a p+ substrate instead of an n+ substrate. The ... | Original |
4 pages, |
transistor Ia 15 rca mos Turn-off Thyristor mosfet controlled thyristor Pelly TRANSISTOR D 1979 10A fast Gate Turn-off Thyristor P channel 600v 20a IGBT AN-7504 AN-7504 abstract |
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| /60 500V/600V Mosfet high dV/dt capability TO220/Max220/TO247 STGD/P/WxxN60H 600V 3A-20A fast IGBT DPAK/TO220/TO247 DPAK/TO220/TO247 DPAK/TO220/TO247 DPAK/TO220/TO247 STTAxx06 / 12 600V/ 1200V STGP3N60D STGP3N60D STGP3N60D STGP3N60D* 600V, 3A IGBT TO220 STGD7NB60H/D STGD7NB60H/D STGD7NB60H/D STGD7NB60H/D 600V, 7A IGBT DPAK / TO220(incl. Diode) STGW20NB60HD STGW20NB60HD STGW20NB60HD STGW20NB60HD 600V, 20A Fast IGBT+Diode TO /81 H.V. Level Shifter - 600V, +0.13/-0.32A, DIP/SO8 L6384 L6384 L6384 L6384 H.V. Half www.datasheetarchive.com/files/stmicroelectronics/stonline/products/support/select/motdrv3.htm |
STMicroelectronics | 16/01/2001 | 10.59 Kb | HTM | motdrv3.htm |
| Mosfet high dV/dt capability TO220/Max220/TO247 STGD/P/WxxN60H 600V 3A-20A fast IGBT DPAK/TO220/TO247 DPAK/TO220/TO247 DPAK/TO220/TO247 DPAK/TO220/TO247 STTAxx06 / 12 600V/ 1200V Turboswitch A Ultra-fast Diode 8A peak, comprehensive protection and programmation STGP3N60D STGP3N60D STGP3N60D STGP3N60D* 600V, 3A IGBT TO220 STGD7NB60H/D STGD7NB60H/D STGD7NB60H/D STGD7NB60H/D 600V, 7A IGBT DPAK / TO220(incl. Diode) STGW20NB60HD STGW20NB60HD STGW20NB60HD STGW20NB60HD 600V, 20A Fast IGBT+Diode TO247 STW15 STW15 STW15 STW15 / 20NB50 20NB50 20NB50 20NB50 Mosfet www.datasheetarchive.com/files/stmicroelectronics/stonline/products/support/select/motdrv3-v2.htm |
STMicroelectronics | 31/10/2000 | 11.6 Kb | HTM | motdrv3-v2.htm |
| Mosfet high dV/dt capability TO220/Max220/TO247 STGD/P/WxxN60H 600V 3A-20A fast IGBT DPAK/TO220/TO247 DPAK/TO220/TO247 DPAK/TO220/TO247 DPAK/TO220/TO247 STTAxx06 / 12 600V/ 1200V Turboswitch A Ultra-fast Diode 8A peak, comprehensive protection and programmation STGP3N60D STGP3N60D STGP3N60D STGP3N60D* 600V, 3A IGBT TO220 STGD7NB60H/D STGD7NB60H/D STGD7NB60H/D STGD7NB60H/D 600V, 7A IGBT DPAK / TO220(incl. Diode) STGW20NB60HD STGW20NB60HD STGW20NB60HD STGW20NB60HD 600V, 20A Fast IGBT+Diode TO247 STW15 STW15 STW15 STW15 / 20NB50 20NB50 20NB50 20NB50 Mosfet www.datasheetarchive.com/files/stmicroelectronics/stonline/products/support/select/motdrv3-v1.htm |
STMicroelectronics | 20/10/2000 | 11.61 Kb | HTM | motdrv3-v1.htm |
| ST | N-CHANNEL 20A - 600V TO-247 POWERMESH IGBT Datasheet N-CHANNEL 20A - 600V TO-247 POWERMESH IGBT STGW20NB60H STGW20NB60H STGW20NB60H STGW20NB60H Document Format 20A - 600V TO-247 PowerMESH ] IGBT n HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) n LOW ON operating area TYPE V CES V CE(sat) I C STGW20NB60H STGW20NB60H STGW20NB60H STGW20NB60H 600 V < 2.8 V 20 A June 1999 1 2 3 TO-247 ) at T c = 100 o C 20 A I CM ( w ) Collector Current (pulsed) 160 A P tot Total www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6205.htm |
STMicroelectronics | 20/10/2000 | 9.51 Kb | HTM | 6205.htm |
| ST | N-CHANNEL 20A - 600V TO-247 POWERMESH IGBT Datasheet N-CHANNEL 20A - 600V TO-247 POWERMESH IGBT STGW20NB60H STGW20NB60H STGW20NB60H STGW20NB60H Text Format STGW20NB60H STGW20NB60H STGW20NB60H STGW20NB60H N-CHANNEL 20A - 600V TO-247 Power H 600 V < 2.8 V 20 A June 1999 1 2 3 TO-247 1/8 THERMAL DATA R thj-case R -Emitter Voltage (V GS = 0) 600 V V ECR Emitter-Collector Voltage 20 V V GE Gate-Emitter Voltage www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6205-v3.htm |
STMicroelectronics | 25/05/2000 | 8.94 Kb | HTM | 6205-v3.htm |
| ST | N-CHANNEL 20A 600V TO-220 POWERMESH IGBT Datasheet N-CHANNEL 20A 600V TO-220 POWERMESH IGBT STGP20NB60K STGP20NB60K STGP20NB60K STGP20NB60K Document are subject to change without notice. STGP20NB60K STGP20NB60K STGP20NB60K STGP20NB60K N-CHANNEL 20A - 600V - TO-220 Power ABSOLUTE MAXIMUM RATINGS TYPE V CES V CE(sat) I C STGP20NB60K STGP20NB60K STGP20NB60K STGP20NB60K 600 V < 2.8 V 20 A Symbol , I C =20 A 8 S C ies Input Capacitance V CE = 25V, f = 1 MHz, V GE = 0 1300 p www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7188-v1.htm |
STMicroelectronics | 21/06/2000 | 8.3 Kb | HTM | 7188-v1.htm |
| ST | N-CHANNEL 20A 600V TO-220 POWERMESH IGBT Datasheet N-CHANNEL 20A 600V TO-220 POWERMESH IGBT STGP20NB60K STGP20NB60K STGP20NB60K STGP20NB60K Document Format Size NB60K NB60K NB60K NB60K N-CHANNEL 20A - 600V - TO-220 PowerMesh] IGBT n HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) n WELDING EQUIPMENTS ABSOLUTE MAXIMUM RATINGS TYPE V CES V CE(sat) I C STGP20NB60K STGP20NB60K STGP20NB60K STGP20NB60K 600 V < 2.8 V 20 A Symbol Parameter Value Unit V CES Collector-Emitter Voltage (V GS = 0) 600 V V ECR www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7188.htm |
STMicroelectronics | 20/10/2000 | 8.75 Kb | HTM | 7188.htm |
| C3S 6A, 600V, UFS Series N-Channel IGBTs (9 pages) FN4139 FN4139 FN4139 FN4139.3 HGTP3N60C3D HGTP3N60C3D HGTP3N60C3D HGTP3N60C3D, HGT1S3N60C3D HGT1S3N60C3D HGT1S3N60C3D HGT1S3N60C3D, HGT1S3N60C3DS HGT1S3N60C3DS HGT1S3N60C3DS HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast HGTD7N60C3 HGTD7N60C3 HGTD7N60C3 HGTD7N60C3, HGTD7N60C3S HGTD7N60C3S HGTD7N60C3S HGTD7N60C3S, HGTP7N60C3 HGTP7N60C3 HGTP7N60C3 HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBTs HGTP7N60C3D HGTP7N60C3D HGTP7N60C3D HGTP7N60C3D, HGT1S7N60C3D HGT1S7N60C3D HGT1S7N60C3D HGT1S7N60C3D, HGT1S7N60C3DS HGT1S7N60C3DS HGT1S7N60C3DS HGT1S7N60C3DS 14A, 600V, UFS Series N-Channel IGBT with Anti HGTP12N60C3D HGTP12N60C3D HGTP12N60C3D HGTP12N60C3D, HGT1S12N60C3D HGT1S12N60C3D HGT1S12N60C3D HGT1S12N60C3D, HGT1S12N60C3DS HGT1S12N60C3DS HGT1S12N60C3DS HGT1S12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti www.datasheetarchive.com/files/harris/families/mct.htm |
Harris | 15/08/1997 | 38.41 Kb | HTM | mct.htm |
| ST | N-CHANNEL 20A - 600V - TO-247 POWERMESH IGBT STGW20NB60H STGW20NB60H STGW20NB60H STGW20NB60H N-CHANNEL 20A - 600V Format STGW20NB60H STGW20NB60H STGW20NB60H STGW20NB60H N-CHANNEL 20A - 600V - TO-247 PowerMESH ] IGBT n HIGH INPUT IMPEDANCE (VOLTAGE C STGW20NB60H STGW20NB60H STGW20NB60H STGW20NB60H 600 V < 2.8 V 20 A October 1998 1 2 3 TO-247 1/8 THERMAL DATA R thj-case R thj-amb R ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES Collector-Emitter Voltage (V GS = 0) 600 V V ) at T c = 25 o C 40 A I C Collector Current (continuous) at T c = 100 o C 20 A I CM ( w ) Collector www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6205-v1.htm |
STMicroelectronics | 02/04/1999 | 7.14 Kb | HTM | 6205-v1.htm |
| ST | N-CHANNEL 20A - 600V - TO-247 POWERMESH IGBT STGW20NB60H STGW20NB60H STGW20NB60H STGW20NB60H N-CHANNEL 20A - 600V Format STGW20NB60H STGW20NB60H STGW20NB60H STGW20NB60H N-CHANNEL 20A - 600V - TO-247 PowerMESH ] IGBT n HIGH INPUT IMPEDANCE (VOLTAGE C STGW20NB60H STGW20NB60H STGW20NB60H STGW20NB60H 600 V < 2.8 V 20 A October 1998 1 2 3 TO-247 1/8 THERMAL DATA R thj-case R thj-amb R ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES Collector-Emitter Voltage (V GS = 0) 600 V V ) at T c = 25 o C 40 A I C Collector Current (continuous) at T c = 100 o C 20 A I CM ( w ) Collector www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6205-v2.htm |
STMicroelectronics | 14/06/1999 | 7.1 Kb | HTM | 6205-v2.htm |