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P channel 600v 20a IGBT

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Abstract: TOSHIBA TENTATIVE MIG30J904H MIG30J904H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT HIGH , , Converter and Brake Power Circuits in One Package. Output (Inverter Stage) : 3 , CONDITION V GE = ± 2 0 V , V c e = 0 V CE = 600V, V q e = 0 V r = 600V I q = 2mA, V q e = 5V IC = 20A, V g e ... OCR Scan
datasheet

4 pages,
109.5 Kb

MIG30J904H TEXT
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Abstract: ) : 30 20A/600V IGBT Input (Converter Stage) : 3< f> 30A / 800V Silicon Rectifier The Electrodes are Isolated from Case. Outline MIG20J906H MIG20J906H : 2-108E5A 2-108E5A MIG20J906HA MIG20J906HA : 2-108E6A 2-108E6A Weight : 190g P PI 1 o o 2 EQUIVALENT CIRCUIT -Q N 96 1 0 0 1 E A A 2 0 T O S H IB A is c o n tin u a lly w o r k in g to im p , TO SH IBA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE MIG20J906H/HA MIG20J906H/HA SILICON N CHANNEL IGBT M , °C - Ie = 20A 2.2 2.8 V vGE= 15V Tj = 125°C - vCE= lov, v GE = o, f= im hz - 1850 - pF V C C = 600V ... OCR Scan
datasheet

9 pages,
390.37 Kb

MIG20J906H/HA TEXT
datasheet frame
Abstract: Ultra-Fast Discrete Diode in a D2-Pak 50 (UltraFast) package 800 300V 15.000A D2PAK 600V 15A HyperFast Discrete Diode in a TO-220AC 50 package 600V 15A HyperFast Discrete Diode in a TO-220AC 50 package 50 600V 15.000A D2PAK 50 600V 15.000A D2PAK 600V 15A HyperFast Discrete Diode in a TO-262 50 package 600V 15A HyperFast Discrete Diode in a TO-262 50 package 600V 15A Hyperfast Discrete Diode in a TO-220 50 FullPack package 600V 15A Hyperfast Discrete Diode in a TO-220 50 FullPack package 600V 15A ... Shenzhen Shouhe Technology
Original
datasheet

463 pages,
1309.65 Kb

Class d IR2110 ir2153 application h bridge ir2110 power supply using IR2153 ac control using ir2110 and mosfet IR2110 h bridge application notes P-CHANNEL 45A TO-247 POWER MOSFET 800V 40A mosfet 600V 300A igbt dc to dc boost converter full bridge ir2110 TEXT
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Abstract: , Converter and Brake Power Circuits and Thermistor in One Package. Output (Inverter Stage) : 30 20A/600V IGBT , TOSHIBA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE MIG20J906H/HA MIG20J906H/HA SILICON N CHANNEL IGBT , , f= im hz - 1850 - ^ies VCc = 600V - 0.10 0.20 tr 10 = 20A - 0.25 0.50 ton v Ge =± i5v - 0.15 , . Outline MIG20J906H MIG20J906H : 2-108E3A 2-108E3A MIG20J906HA MIG20J906HA : 2-108E4A 2-108E4A Weight : 190g EQUIVALENT CIRCUIT P PI N , prod u ct could cause loss o f hum an life, bodily injury or d a m a g e to property. In d e ve lo p in ... OCR Scan
datasheet

9 pages,
385.3 Kb

P channel 600v 20a IGBT MIG20J906H/HA TEXT
datasheet frame
Abstract: TOSHIBA MIG20J906H/HA MIG20J906H/HA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT , , Converter and Brake Power Circuits and Thermistor in One Package. Output (Inverter Stage) : 30 20A/600V IGBT Input (Converter Stage) : 30 30A/800V Silicon Rectifier The Electrodes are Isolated from Case. Outline MIG20J906H MIG20J906H : 2-108E5A 2-108E5A MIG20J906HA MIG20J906HA : 2-108E6A 2-108E6A Weight : 190g EQUIVALENT CIRCUIT P PI o- Bc n , Capacitance Cies vce=lov, vge=o, f= imhz — 1850 — pF Switching Time Rise Time tr Vcc = 600V IC = 20A ... OCR Scan
datasheet

9 pages,
384.4 Kb

MIG20J906HA MIG20J906H mig20j P channel 600v 20a IGBT MIG20J906H/HA TEXT
datasheet frame
Abstract: ) : 30 20A/600V IGBT • Input (Converter Stage) : 30 30A/800V Silicon Rectifier • The Electrodes , TOSHIBA MIG20J906H/HA MIG20J906H/HA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT , EQUIVALENT CIRCUIT P PI 961001EAA2 961001EAA2 0 TOSHIBA is continually working to improve the quality and the , One Cycle Surge Forward Current (50Hz, Non-Repetitive) IfSM 400 A Brake IGBT Collector-Emitter , ICES VCE = 600V, VGE=0 — — 1.0 mA Gate-Emitter Cut-Off Voltage VGE (off) IC = 2mA, Vce = 5V 5.0 ... OCR Scan
datasheet

9 pages,
469.91 Kb

transistor BT 139 F applications note thermistor characteristic MIG20J906HA MIG20J906H P channel 600v 20a IGBT MIG20J906H/HA TEXT
datasheet frame
Abstract: Power Circuits in One Package. Output (Inverter Stage) : Z 20A/600V IGBT Input (Converter Stage) : 3< f> 20A / 800V Silicon Rectifier The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT P PI , TOSHIBA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805 MIG20J805 HIGH POWER , Turn-off Time SYMBOL ÏGES ic e s TEST CONDITION VGE = ± 2 0 V , VCE = 0 Vc e = 600V, Vq e - 0 IC = 2mA , ) VCE (sat) 10 = 20A, Vq e -15V Cies tr ^on tf t0ff VF trr Rth (j-c) Vc e = 10V, Vg e = 0, f = ... OCR Scan
datasheet

3 pages,
135.67 Kb

N channel 600v 20a IGBT IGBT 800v 20a P channel 600v 20a IGBT MIG20J805 TEXT
datasheet frame
Abstract: Circuits in One Package. • Output (Inverter Stage) : 3y5 20A/600V IGBT • Input (Converter Stage) : 3y5 20A/800V Silicon Rectifier • The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT Unit in mm 4-8.0±0.4 3-8.0+0.4 I E,u' P / N ni PI GU 6-3.0+0.4 E,v EW G Y E/ GV| Gvy| GX|Gy , TOSHIBA MIG20J805 MIG20J805 TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805 MIG20J805 , Current :GES VGE=±20V, VCE = 0 — — ±500 nA Collector Cut-off Current Ices Vce=600V, vGE=0 — â ... OCR Scan
datasheet

3 pages,
158.18 Kb

IGBT 800v 20a N channel 600v 20a IGBT MIG20J805 P channel 600v 20a IGBT TEXT
datasheet frame
Abstract: T O S H IB A TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J855H MIG20J855H HIGH , · Integrates Inverter, Converter Power Circuits in One Package. Output (Inverter Stage) : 30 20A/600V High Speed Type IGBT VCE (sat) = 2-80V (MAX.) tf= 0.30^s (MAX.) trr = 0.15^s (MAX.) Input , - - 1.0 mA V c e = 600V, V g e = ° l 0 = 2mA, V qe = 5V 5.0 - 8.0 V - 2.10 2.80 V IC = 20A, VGE = , . JEDEC ELAJ TOSHIBA W eight : 66g P PI EQUIVALENT CIRCUIT 961001EAA1 961001EAA1 · TOSHIBA is continually ... OCR Scan
datasheet

3 pages,
108.38 Kb

IGBT 800v 20a MIG20J855H TEXT
datasheet frame
Abstract: (Inverter Stage) : 30 20A/600V High Speed Type IGBT VCE (sat) = 2-80V (MAX.) tf=0.30//s (MAX.) trr = , T O S H IB A TENTATIVE MIG20J855H MIG20J855H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT , Electrodes are Isolated from Case. JEDEC ELAJ TOSHIBA W eight : 66g EQUIVALENT CIRCUIT P PI , ±500 nA V g e = ± 20V, V q e - 0 — — 1.0 mA V c e = 600V, V g e = ° l 0 = 2mA, V qe = 5V 5.0 — 8.0 V — 2.10 2.80 V IC = 20A, VGE = 15V pF — — ^CE = 10^> V g e = 0> f=lM H z â ... OCR Scan
datasheet

3 pages,
80.73 Kb

MIG20J855H TEXT
datasheet frame

Archived Files

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