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HI1-0547/883 Intersil Corporation 8-CHANNEL, DIFFERENTIAL MULTIPLEXER visit Intersil
UCC27533DBVR Texas Instruments 2.5A/5A 35Vmax VDD Single Channel Driver For IGBT and Power MOSFET 5-SOT-23 -40 to 140 visit Texas Instruments Buy
UCC27533DBVT Texas Instruments 2.5A/5A 35Vmax VDD Single Channel Driver For IGBT and Power MOSFET 5-SOT-23 -40 to 140 visit Texas Instruments
DG407DY Intersil Corporation 8-CHANNEL, DIFFERENTIAL MULTIPLEXER, PDSO28 visit Intersil
DG409DJ Intersil Corporation 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, PDIP16 visit Intersil
HI3-0547-5 Intersil Corporation 8-CHANNEL, DIFFERENTIAL MULTIPLEXER, PDIP28 visit Intersil

P channel 600v 20a IGBT

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: TOSHIBA TENTATIVE MIG30J904H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT HIGH , , Converter and Brake Power Circuits in One Package. Output (Inverter Stage) : 3 , CONDITION V GE = ± 2 0 V , V c e = 0 V CE = 600V, V q e = 0 V r = 600V I q = 2mA, V q e = 5V IC = 20A, V g e -
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61001EAA1
Abstract: ) : 30 20A/600V IGBT Input (Converter Stage) : 3< f> 30A / 800V Silicon Rectifier The Electrodes are Isolated from Case. Outline MIG20J906H : 2-108E5A MIG20J906HA : 2-108E6A Weight : 190g P PI 1 o o 2 EQUIVALENT CIRCUIT -Q N 96 1 0 0 1 E A A 2 0 T O S H IB A is c o n tin u a lly w o r k in g to im p , TO SH IBA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE MIG20J906H/HA SILICON N CHANNEL IGBT M , °C - Ie = 20A 2.2 2.8 V vGE= 15V Tj = 125°C - vCE= lov, v GE = o, f= im hz - 1850 - pF V C C = 600V -
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G20J906H

IRU1239SC

Abstract: iru1239 Ultra-Fast Discrete Diode in a D2-Pak 50 (UltraFast) package 800 300V 15.000A D2PAK 600V 15A HyperFast Discrete Diode in a TO-220AC 50 package 600V 15A HyperFast Discrete Diode in a TO-220AC 50 package 50 600V 15.000A D2PAK 50 600V 15.000A D2PAK 600V 15A HyperFast Discrete Diode in a TO-262 50 package 600V 15A HyperFast Discrete Diode in a TO-262 50 package 600V 15A Hyperfast Discrete Diode in a TO-220 50 FullPack package 600V 15A Hyperfast Discrete Diode in a TO-220 50 FullPack package 600V 15A
Shenzhen Shouhe Technology
Original
IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 100MT160PAPBF 100MT160PA 100MT160PBPBF T85HFL60S05 T85HFL80S05 T90RIA10

P channel 600v 20a IGBT

Abstract: , Converter and Brake Power Circuits and Thermistor in One Package. Output (Inverter Stage) : 30 20A/600V IGBT , TOSHIBA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE MIG20J906H/HA SILICON N CHANNEL IGBT , , f= im hz - 1850 - ^ies VCc = 600V - 0.10 0.20 tr 10 = 20A - 0.25 0.50 ton v Ge =± i5v - 0.15 , . Outline MIG20J906H : 2-108E3A MIG20J906HA : 2-108E4A Weight : 190g EQUIVALENT CIRCUIT P PI N , prod u ct could cause loss o f hum an life, bodily injury or d a m a g e to property. In d e ve lo p in
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P channel 600v 20a IGBT

P channel 600v 20a IGBT

Abstract: H-2040 TOSHIBA MIG20J906H/HA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT , , Converter and Brake Power Circuits and Thermistor in One Package. Output (Inverter Stage) : 30 20A/600V IGBT Input (Converter Stage) : 30 30A/800V Silicon Rectifier The Electrodes are Isolated from Case. Outline MIG20J906H : 2-108E5A MIG20J906HA : 2-108E6A Weight : 190g EQUIVALENT CIRCUIT P PI o- Bc n , Capacitance Cies vce=lov, vge=o, f= imhz â'" 1850 â'" pF Switching Time Rise Time tr Vcc = 600V IC = 20A
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H-2040 mig20j 961001EAA2 125-C

P channel 600v 20a IGBT

Abstract: MIG20J906H ) : 30 20A/600V IGBT â'¢ Input (Converter Stage) : 30 30A/800V Silicon Rectifier â'¢ The Electrodes , TOSHIBA MIG20J906H/HA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT , EQUIVALENT CIRCUIT P PI 961001EAA2 0 TOSHIBA is continually working to improve the quality and the , One Cycle Surge Forward Current (50Hz, Non-Repetitive) IfSM 400 A Brake IGBT Collector-Emitter , ICES VCE = 600V, VGE=0 â'" â'" 1.0 mA Gate-Emitter Cut-Off Voltage VGE (off) IC = 2mA, Vce = 5V 5.0
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transistor BT 139 F applications note thermistor characteristic

P channel 600v 20a IGBT

Abstract: IGBT 800v 20a Power Circuits in One Package. Output (Inverter Stage) : Z 20A/600V IGBT Input (Converter Stage) : 3< f> 20A / 800V Silicon Rectifier The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT P PI , TOSHIBA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805 HIGH POWER , Turn-off Time SYMBOL ÏGES ic e s TEST CONDITION VGE = ± 2 0 V , VCE = 0 Vc e = 600V, Vq e - 0 IC = 2mA , ) VCE (sat) 10 = 20A, Vq e -15V Cies tr ^on tf t0ff VF trr Rth (j-c) Vc e = 10V, Vg e = 0, f =
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IGBT 800v 20a N channel 600v 20a IGBT 961001EAA1

P channel 600v 20a IGBT

Abstract: MIG20J805 Circuits in One Package. â'¢ Output (Inverter Stage) : 3y5 20A/600V IGBT â'¢ Input (Converter Stage) : 3y5 20A/800V Silicon Rectifier â'¢ The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT Unit in mm 4-8.0±0.4 3-8.0+0.4 I E,u' P / N ni PI GU 6-3.0+0.4 E,v EW G Y E/ GV| Gvy| GX|Gy , TOSHIBA MIG20J805 TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805 , Current :GES VGE=±20V, VCE = 0 â'" â'" ±500 nA Collector Cut-off Current Ices Vce=600V, vGE=0 â'" â
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2-81B1A

IGBT 800v 20a

Abstract: T O S H IB A TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J855H HIGH , · Integrates Inverter, Converter Power Circuits in One Package. Output (Inverter Stage) : 30 20A/600V High Speed Type IGBT VCE (sat) = 2-80V (MAX.) tf= 0.30^s (MAX.) trr = 0.15^s (MAX.) Input , - - 1.0 mA V c e = 600V, V g e = ° l 0 = 2mA, V qe = 5V 5.0 - 8.0 V - 2.10 2.80 V IC = 20A, VGE = , . JEDEC ELAJ TOSHIBA W eight : 66g P PI EQUIVALENT CIRCUIT 961001EAA1 · TOSHIBA is continually
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Abstract: (Inverter Stage) : 30 20A/600V High Speed Type IGBT VCE (sat) = 2-80V (MAX.) tf=0.30//s (MAX.) trr = , T O S H IB A TENTATIVE MIG20J855H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT , Electrodes are Isolated from Case. JEDEC ELAJ TOSHIBA W eight : 66g EQUIVALENT CIRCUIT P PI , ±500 nA V g e = ± 20V, V q e - 0 â'" â'" 1.0 mA V c e = 600V, V g e = ° l 0 = 2mA, V qe = 5V 5.0 â'" 8.0 V â'" 2.10 2.80 V IC = 20A, VGE = 15V pF â'" â'" ^CE = 10^> V g e = 0> f=lM H z â -
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P channel 600v 20a IGBT

Abstract: MIG toshiba , Converter Power Circuits in One Package. Output (Inverter Stage) : Z 20A/600V IGBT Input (Converter Stage , TOSHIBA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J855 HIGH POWER , Turn-off Time SYMBOL ÏGES ic e s TEST CONDITION VGE = ± 2 0 V , VCE = 0 Vc e = 600V, Vq e - 0 IC = 2mA , ) VCE (sat) 10 = 20A, Vq e -15V Cies tr ^on tf t0ff VF trr Rth (j-c) Vc e = 10V, Vg e = 0, f = 1MHz V c c = 300V 10 = 20A v Ge = ± 15V RG = 620 (Note 1) Ip = 20A, VGE - 0 IF = 20A, V g e = - 1 0 V di/ dt
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MIG toshiba 0J855

igbt 600v 20a

Abstract: DC 300V to 15V converter Circuits in One Package. â'¢ Output (Inverter Stage) : 30 20A/600V IGBT â'¢ Input (Converter Stage) : 30 20A/800V Silicon Rectifier â'¢ The Electrodes are Isolated from Case. Unit in mm 4-8.0±0.4 I E,U P / N NI PI GU 3-8.0±0.4 6-3.0±0.4 E,V EW GY E/ 2 GVl GWI GXIG2/ 05â'žÂ±a2 I JEDEC EIAJ , TOSHIBA MIG20J805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805H HIGH , '" ±500 nA Collector Cut-off Current ICES VCE â'" 600V, Vge = 0 â'" â'" 1.0 mA Gate-Emitter Cut-off
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igbt 600v 20a DC 300V to 15V converter toshiba a 200 inverter

P channel 600v 20a IGBT

Abstract: 5V to 300V dc dc converter T O S H IB A TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J855H , Integrates Inverter, Converter Power Circuits in One Package. Output (Inverter Stage) : 30 20A/600V High Speed Type IGBT VCE (sat) = 2-80V (MAX.) tf=0.30y«s (MAX.) trr = 0.15,«s (MAX.) Input (Converter Stage , TOSHIBA W eight : 66g P PI EQUIVALENT CIRCUIT 961001EAA1 · TO SHIBA is continually w o rkin g to im , ) TEST CONDITION MIN. TYP. MAX. UNIT - - ±500 nA V g e = ± 20V, V q e -0 - 1.0 mA - VCE = 600V- v GE
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5V to 300V dc dc converter
Abstract: '¢ Integrates Inverter, Converter Power Circuits in One Package. Output (Inverter Stage) : 3y5 20A/600V IGBT , T O SH IB A TENTATIVE MIG20J855 TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT , . Weight : 66g EQUIVALENT CIRCUIT P PI 961001EAA1 â'¢ TOSHIBA is continually w orking to , MIN. TYP. MAX. UNIT â'" â'" ±500 nA VGE=±20V , VCE = 0 VCE = 600V, VGE = 0 â'" â'" 1.0 mA IG = 2mA, VGE = 5V â'" 6.0 â'" V â'" 2.30 2.80 V IG = 20A, VGE = 15V â'" â'" pF V c e = 10V, V -
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P channel 600v 20a IGBT

Abstract: MIG10Q805H TOSHIBA MIG10Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10Q805H HIGH , Circuits in One Package. â'¢ Output (Inverter Stage) : 30 10A/ 1200V IGBT â'¢ Input (Converter Stage , E,U P / N NI PI GU 3-8.0±0.4 6-3.0±0.4 E,V EW GY E/ 2 GVl GWI GX\GZy 05-8±O-2 I JEDEC EIAJ , â'" pF Switching Time Rise Time tr Vcc = 600V IC = 10A VGE=±15V RO = 120n (Note 1) â'" 0.07 0.15 , ) VCE - VGE COMMON EMITTER Tc = 25°C IC = 20A 10 4 8 12 16 GATE-EMITTER VOLTAGE VQE (V) 20 H O
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VGE--10V
Abstract: TO SH IBA TENTATIVE MIG20J806H/HA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT , Inverter, Converter Power Circuits and Thermistor in One Package. Output (Inverter Stage) : 3 20A/600V IGBT Input (Converter Stage) : 30 30A/800V Silicon Rectifier The Electrodes are Isolated from Case , '¢ EQUIVALENT CIRCUIT P PI 1 o 2 Q N 961001EAA2 0 0 0 T O SH IB A is co ntinu ally , Resistance Rth (j-c) TEST CONDITION VGE=±20V, VCE=0 VCE = 600V, VGE=0 IC = 2mA, VCE = 5V T| = 25 -
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MIG20J806H MIG20J806HA
Abstract: T O S H IB A TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG15J805H MI G , ) : 30 15A /600V H igh Speed Type IGBT VCE (sat) = 2.80V (MAX.) tf= 0 .3 0 ^ s (MAX.) trr = 0.15^s (MAX.) Input (Converter Stage) : 3ç5 20A /800V Silicon Rectifier VF = 1.30V (MAX.) The Electrodes are Isolated from Case. JEDEC EIA J TOSHIBA W eight : 66g -o EQUIVALENT CIRCUIT P PI ROSoT o- -o N , CHARACTERISTIC Repetitive P eak Reverse : RRM v RRM = 80 ° v C urrent lFM = 20A Peak Forw ard Voltage VFM Peak -
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igbt welding machine scheme

Abstract: ikw40n120h3 Switch Topology high power high current Voltage 600V 30V 40V 100V Technology IGBT , IGBT TrenchstopTM 600V IKW50N60T CoolMOSTM CFD 650V IPW65R041CFD Boost DC/DC DC/AC Smart , IGBT Highspeed 3 1200V IKW40N120H3 SiC JEFT 1200V IJW120R050T1 Inverter IGBT Trenchstop 600V IKW50N60T SiC JEFT 1200V IJW120R050T1 Other products CoolSETTM IGBT Highspeed3 600V/1200V EiceDriverTM , 28 Segment High Voltage 52 Segment Silicon Carbide 64 Segment IGBT 72 We create
Infineon Technologies
Original
igbt welding machine scheme aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING B152-H9571-G2-X-7600
Abstract: TOSHIBA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT M IG 10J805 HIGH , Inverter, Converter Power Circuits in One Package. Output (Inverter Stage) : Z 10A/600V IGBT Input (Converter Stage) : 3< f> 20A / 800V Silicon Rectifier The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT P PI Weight : 66g , Turn-Off Time SYMBOL ÏGES ic e s TEST CONDITION VGE = ± 2 0 V , VCE = 0 Vc e = 600V, Vq e - 0 IC = 1mA -
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Abstract: T O S H IB A TENTATIVE M IG 1 5 J 8 0 5 H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MI G 1 5 J 8 0 5 H U nit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL , Package. O utput (Inverter Stage) : 3 15A /600V H igh Speed Type IGBT VCE (sat) = 2.80V (MAX.) tf= 0 .3 0 ^ s (MAX.) trr = 0.15^s (MAX.) Input (Converter Stage) : 30 20A /800V Silicon Rectifier VF = , CIRCUIT P -o PI ROSo- T o-o N 961001EAA1 â'¢ TO SH IBA is continually w o rkin g to -
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