500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : ICOMP-CHANGEKP Supplier : Black Box Manufacturer : Newark element14 Stock : - Best Price : $1,194.5800 Price Each : $1,257.4500
Part : ICOMP-CHANGEKS Supplier : Black Box Manufacturer : Newark element14 Stock : - Best Price : $426.9800 Price Each : $471.9300
Shipping cost not included. Currency conversions are estimated. 

P channel 600v 20a IGBT

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: TOSHIBA TENTATIVE MIG30J904H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT HIGH , , Converter and Brake Power Circuits in One Package. Output (Inverter Stage) : 3 , CONDITION V GE = ± 2 0 V , V c e = 0 V CE = 600V, V q e = 0 V r = 600V I q = 2mA, V q e = 5V IC = 20A, V g e -
OCR Scan
61001EAA1
Abstract: ) : 30 20A/600V IGBT Input (Converter Stage) : 3< f> 30A / 800V Silicon Rectifier The Electrodes are Isolated from Case. Outline MIG20J906H : 2-108E5A MIG20J906HA : 2-108E6A Weight : 190g P PI 1 o o 2 EQUIVALENT CIRCUIT -Q N 96 1 0 0 1 E A A 2 0 T O S H IB A is c o n tin u a lly w o r k in g to im p , TO SH IBA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE MIG20J906H/HA SILICON N CHANNEL IGBT M , °C - Ie = 20A 2.2 2.8 V vGE= 15V Tj = 125°C - vCE= lov, v GE = o, f= im hz - 1850 - pF V C C = 600V -
OCR Scan
G20J906H
Abstract: Ultra-Fast Discrete Diode in a D2-Pak 50 (UltraFast) package 800 300V 15.000A D2PAK 600V 15A HyperFast Discrete Diode in a TO-220AC 50 package 600V 15A HyperFast Discrete Diode in a TO-220AC 50 package 50 600V 15.000A D2PAK 50 600V 15.000A D2PAK 600V 15A HyperFast Discrete Diode in a TO-262 50 package 600V 15A HyperFast Discrete Diode in a TO-262 50 package 600V 15A Hyperfast Discrete Diode in a TO-220 50 FullPack package 600V 15A Hyperfast Discrete Diode in a TO-220 50 FullPack package 600V 15A Shenzhen Shouhe Technology
Original
IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 100MT160PAPBF 100MT160PA 100MT160PBPBF T85HFL60S05 T85HFL80S05 T90RIA10
Abstract: , Converter and Brake Power Circuits and Thermistor in One Package. Output (Inverter Stage) : 30 20A/600V IGBT , TOSHIBA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE MIG20J906H/HA SILICON N CHANNEL IGBT , , f= im hz - 1850 - ^ies VCc = 600V - 0.10 0.20 tr 10 = 20A - 0.25 0.50 ton v Ge =± i5v - 0.15 , . Outline MIG20J906H : 2-108E3A MIG20J906HA : 2-108E4A Weight : 190g EQUIVALENT CIRCUIT P PI N , prod u ct could cause loss o f hum an life, bodily injury or d a m a g e to property. In d e ve lo p in -
OCR Scan
Abstract: TOSHIBA MIG20J906H/HA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT , , Converter and Brake Power Circuits and Thermistor in One Package. Output (Inverter Stage) : 30 20A/600V IGBT Input (Converter Stage) : 30 30A/800V Silicon Rectifier The Electrodes are Isolated from Case. Outline MIG20J906H : 2-108E5A MIG20J906HA : 2-108E6A Weight : 190g EQUIVALENT CIRCUIT P PI o- Bc n , Capacitance Cies vce=lov, vge=o, f= imhz â'" 1850 â'" pF Switching Time Rise Time tr Vcc = 600V IC = 20A -
OCR Scan
H-2040 mig20j 961001EAA2 125-C
Abstract: ) : 30 20A/600V IGBT â'¢ Input (Converter Stage) : 30 30A/800V Silicon Rectifier â'¢ The Electrodes , TOSHIBA MIG20J906H/HA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT , EQUIVALENT CIRCUIT P PI 961001EAA2 0 TOSHIBA is continually working to improve the quality and the , One Cycle Surge Forward Current (50Hz, Non-Repetitive) IfSM 400 A Brake IGBT Collector-Emitter , ICES VCE = 600V, VGE=0 â'" â'" 1.0 mA Gate-Emitter Cut-Off Voltage VGE (off) IC = 2mA, Vce = 5V 5.0 -
OCR Scan
thermistor characteristic transistor BT 139 F applications note
Abstract: Power Circuits in One Package. Output (Inverter Stage) : Z 20A/600V IGBT Input (Converter Stage) : 3< f> 20A / 800V Silicon Rectifier The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT P PI , TOSHIBA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805 HIGH POWER , Turn-off Time SYMBOL ÏGES ic e s TEST CONDITION VGE = ± 2 0 V , VCE = 0 Vc e = 600V, Vq e - 0 IC = 2mA , ) VCE (sat) 10 = 20A, Vq e -15V Cies tr ^on tf t0ff VF trr Rth (j-c) Vc e = 10V, Vg e = 0, f = -
OCR Scan
IGBT 800v 20a N channel 600v 20a IGBT 961001EAA1
Abstract: Circuits in One Package. â'¢ Output (Inverter Stage) : 3y5 20A/600V IGBT â'¢ Input (Converter Stage) : 3y5 20A/800V Silicon Rectifier â'¢ The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT Unit in mm 4-8.0±0.4 3-8.0+0.4 I E,u' P / N ni PI GU 6-3.0+0.4 E,v EW G Y E/ GV| Gvy| GX|Gy , TOSHIBA MIG20J805 TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805 , Current :GES VGE=±20V, VCE = 0 â'" â'" ±500 nA Collector Cut-off Current Ices Vce=600V, vGE=0 â'" â -
OCR Scan
2-81B1A
Abstract: T O S H IB A TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J855H HIGH , · Integrates Inverter, Converter Power Circuits in One Package. Output (Inverter Stage) : 30 20A/600V High Speed Type IGBT VCE (sat) = 2-80V (MAX.) tf= 0.30^s (MAX.) trr = 0.15^s (MAX.) Input , - - 1.0 mA V c e = 600V, V g e = ° l 0 = 2mA, V qe = 5V 5.0 - 8.0 V - 2.10 2.80 V IC = 20A, VGE = , . JEDEC ELAJ TOSHIBA W eight : 66g P PI EQUIVALENT CIRCUIT 961001EAA1 · TOSHIBA is continually -
OCR Scan
Abstract: (Inverter Stage) : 30 20A/600V High Speed Type IGBT VCE (sat) = 2-80V (MAX.) tf=0.30//s (MAX.) trr = , T O S H IB A TENTATIVE MIG20J855H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT , Electrodes are Isolated from Case. JEDEC ELAJ TOSHIBA W eight : 66g EQUIVALENT CIRCUIT P PI , ±500 nA V g e = ± 20V, V q e - 0 â'" â'" 1.0 mA V c e = 600V, V g e = ° l 0 = 2mA, V qe = 5V 5.0 â'" 8.0 V â'" 2.10 2.80 V IC = 20A, VGE = 15V pF â'" â'" ^CE = 10^> V g e = 0> f=lM H z â -
OCR Scan
Abstract: , Converter Power Circuits in One Package. Output (Inverter Stage) : Z 20A/600V IGBT Input (Converter Stage , TOSHIBA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J855 HIGH POWER , Turn-off Time SYMBOL ÏGES ic e s TEST CONDITION VGE = ± 2 0 V , VCE = 0 Vc e = 600V, Vq e - 0 IC = 2mA , ) VCE (sat) 10 = 20A, Vq e -15V Cies tr ^on tf t0ff VF trr Rth (j-c) Vc e = 10V, Vg e = 0, f = 1MHz V c c = 300V 10 = 20A v Ge = ± 15V RG = 620 (Note 1) Ip = 20A, VGE - 0 IF = 20A, V g e = - 1 0 V di/ dt -
OCR Scan
MIG toshiba 0J855
Abstract: Circuits in One Package. â'¢ Output (Inverter Stage) : 30 20A/600V IGBT â'¢ Input (Converter Stage) : 30 20A/800V Silicon Rectifier â'¢ The Electrodes are Isolated from Case. Unit in mm 4-8.0±0.4 I E,U P / N NI PI GU 3-8.0±0.4 6-3.0±0.4 E,V EW GY E/ 2 GVl GWI GXIG2/ 05â'žÂ±a2 I JEDEC EIAJ , TOSHIBA MIG20J805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805H HIGH , '" ±500 nA Collector Cut-off Current ICES VCE â'" 600V, Vge = 0 â'" â'" 1.0 mA Gate-Emitter Cut-off -
OCR Scan
DC 300V to 15V converter igbt 600v 20a toshiba a 200 inverter
Abstract: T O S H IB A TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J855H , Integrates Inverter, Converter Power Circuits in One Package. Output (Inverter Stage) : 30 20A/600V High Speed Type IGBT VCE (sat) = 2-80V (MAX.) tf=0.30y«s (MAX.) trr = 0.15,«s (MAX.) Input (Converter Stage , TOSHIBA W eight : 66g P PI EQUIVALENT CIRCUIT 961001EAA1 · TO SHIBA is continually w o rkin g to im , ) TEST CONDITION MIN. TYP. MAX. UNIT - - ±500 nA V g e = ± 20V, V q e -0 - 1.0 mA - VCE = 600V- v GE -
OCR Scan
5V to 300V dc dc converter
Abstract: '¢ Integrates Inverter, Converter Power Circuits in One Package. Output (Inverter Stage) : 3y5 20A/600V IGBT , T O SH IB A TENTATIVE MIG20J855 TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT , . Weight : 66g EQUIVALENT CIRCUIT P PI 961001EAA1 â'¢ TOSHIBA is continually w orking to , MIN. TYP. MAX. UNIT â'" â'" ±500 nA VGE=±20V , VCE = 0 VCE = 600V, VGE = 0 â'" â'" 1.0 mA IG = 2mA, VGE = 5V â'" 6.0 â'" V â'" 2.30 2.80 V IG = 20A, VGE = 15V â'" â'" pF V c e = 10V, V -
OCR Scan
Abstract: TOSHIBA MIG10Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10Q805H HIGH , Circuits in One Package. â'¢ Output (Inverter Stage) : 30 10A/ 1200V IGBT â'¢ Input (Converter Stage , E,U P / N NI PI GU 3-8.0±0.4 6-3.0±0.4 E,V EW GY E/ 2 GVl GWI GX\GZy 05-8±O-2 I JEDEC EIAJ , â'" pF Switching Time Rise Time tr Vcc = 600V IC = 10A VGE=±15V RO = 120n (Note 1) â'" 0.07 0.15 , ) VCE - VGE COMMON EMITTER Tc = 25°C IC = 20A 10 4 8 12 16 GATE-EMITTER VOLTAGE VQE (V) 20 H O -
OCR Scan
VGE--10V
Abstract: TO SH IBA TENTATIVE MIG20J806H/HA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT , Inverter, Converter Power Circuits and Thermistor in One Package. Output (Inverter Stage) : 3 20A/600V IGBT Input (Converter Stage) : 30 30A/800V Silicon Rectifier The Electrodes are Isolated from Case , '¢ EQUIVALENT CIRCUIT P PI 1 o 2 Q N 961001EAA2 0 0 0 T O SH IB A is co ntinu ally , Resistance Rth (j-c) TEST CONDITION VGE=±20V, VCE=0 VCE = 600V, VGE=0 IC = 2mA, VCE = 5V T| = 25 -
OCR Scan
MIG20J806H MIG20J806HA
Abstract: T O S H IB A TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG15J805H MI G , ) : 30 15A /600V H igh Speed Type IGBT VCE (sat) = 2.80V (MAX.) tf= 0 .3 0 ^ s (MAX.) trr = 0.15^s (MAX.) Input (Converter Stage) : 3ç5 20A /800V Silicon Rectifier VF = 1.30V (MAX.) The Electrodes are Isolated from Case. JEDEC EIA J TOSHIBA W eight : 66g -o EQUIVALENT CIRCUIT P PI ROSoT o- -o N , CHARACTERISTIC Repetitive P eak Reverse : RRM v RRM = 80 ° v C urrent lFM = 20A Peak Forw ard Voltage VFM Peak -
OCR Scan
Abstract: Switch Topology high power high current Voltage 600V 30V 40V 100V Technology IGBT , IGBT TrenchstopTM 600V IKW50N60T CoolMOSTM CFD 650V IPW65R041CFD Boost DC/DC DC/AC Smart , IGBT Highspeed 3 1200V IKW40N120H3 SiC JEFT 1200V IJW120R050T1 Inverter IGBT Trenchstop 600V IKW50N60T SiC JEFT 1200V IJW120R050T1 Other products CoolSETTM IGBT Highspeed3 600V/1200V EiceDriverTM , 28 Segment High Voltage 52 Segment Silicon Carbide 64 Segment IGBT 72 We create Infineon Technologies
Original
igbt welding machine scheme aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING B152-H9571-G2-X-7600
Abstract: TOSHIBA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT M IG 10J805 HIGH , Inverter, Converter Power Circuits in One Package. Output (Inverter Stage) : Z 10A/600V IGBT Input (Converter Stage) : 3< f> 20A / 800V Silicon Rectifier The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT P PI Weight : 66g , Turn-Off Time SYMBOL ÏGES ic e s TEST CONDITION VGE = ± 2 0 V , VCE = 0 Vc e = 600V, Vq e - 0 IC = 1mA -
OCR Scan
Abstract: T O S H IB A TENTATIVE M IG 1 5 J 8 0 5 H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MI G 1 5 J 8 0 5 H U nit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL , Package. O utput (Inverter Stage) : 3 15A /600V H igh Speed Type IGBT VCE (sat) = 2.80V (MAX.) tf= 0 .3 0 ^ s (MAX.) trr = 0.15^s (MAX.) Input (Converter Stage) : 30 20A /800V Silicon Rectifier VF = , CIRCUIT P -o PI ROSo- T o-o N 961001EAA1 â'¢ TO SH IBA is continually w o rkin g to -
OCR Scan
Showing first 20 results.