500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : 2867791 - RAD-ISM-900-ANT-OMNI-FG-3-N Supplier : Phoenix Contact Manufacturer : Shortec Electronics Stock : - Best Price : - Price Each : -
Part : 2885579 - RAD-ISM-900-ANT-OMNI-FG-6-N Supplier : Phoenix Contact Manufacturer : Shortec Electronics Stock : - Best Price : - Price Each : -
Shipping cost not included. Currency conversions are estimated. 

OMNIFET

Catalog Datasheet MFG & Type PDF Document Tags

OMNIFET

Abstract: 1N4148 DO35 ASIC in a high side and a low side switch circuit. The switching device is the SGS-Thomson OmniFet. , pin's of the AS8401 and the OmniFet. That particularly applies if the OmniFet/AS8401 combination is , slope in the load circuit (the OMNIFET's source potential) (changes in the ASIC's ground potential of , control ASIC AS8401 for OMNIFET Application Note Multipurpose control ASIC for OMNINET ­ Application , for OMNIFET (SGS Thompson intelligent power FET family) · Contains one channel on the board
austriamicrosystems AG
Original
OMNIFET 1N4148 DO35 j20 Schematic BC141 sgs bc141 BC141-10

OMNIFET

Abstract: 1N4148 DO35 a high side and a low side switch circuit. The switching device is the SGSThomson OmniFet. The main , because of the fast changing potentials on the pin's of the AS8401 and the OmniFet. That particularly , ground shifts together with the switching slope in the load circuit (the OMNIFET's source potential , OMNIFET Application Note Multipurpose control ASIC for OMNINET ­ Application Note AS8401 , OMNIFET (SGS Thompson intelligent power FET family) · Contains one channel on the board ·
austriamicrosystems AG
Original
AUSTRIA MIKRO SYSTEME INTERNATIONAL

MIKRO PF REGULATOR

Abstract: automatic change over switch circuit diagram device. (OMNIFET is a s trademark of SGS-THOMSON). The OMNIFET' integrated protection circuits (current limitas tion, over temperature protection, .) are supplied via the OMNIFET' gate input. Thus in the s OMNIFET' on-state, a DC gate current of 0.5mA is required. In a failure case (e.g. excessive s temperature) an internal resistor of about 100 is connected between the OMNIFET' gate s and source. This , the present driver voltage related to OMNIFET' source s potential. · Error detection for the
austriamicrosystems AG
Original
MIKRO PF REGULATOR automatic change over switch circuit diagram 27OC AS8401/O

VNS1NV04D

Abstract: OMNIFET VNS1NV04D ® "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET TYPE VNS1NV04D RDS(on) 250 , The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended , ) t Figure 2: Test Circuit for Diode Recovery Times A A D I FAST DIODE OMNIFET S L=100uH B B 330 D Rgen Vgen VDD I OMNIFET S 8.5 6/14 1
STMicroelectronics
Original
omnifet ii

OMNIFET

Abstract: VB020-4 overstress of the MOSFET under harsh conditions. The FEATURES VDD OMNIFET's ability to Unrivalled , SMART HIGH SIDE DRIVERS OMNIFETs - AUTOPROTECTED POWER MOSFETs Type VCLAMP RDS(on) (V , -10 PowerSO-10 Linear Current Limit ESD Protected Voltage Clamping Logic Level OMNIFET OMNIFET , supplier of smart power devices offers OMNIFETs, an outstanding family of fully autoprotected low voltage Power MOSFETs that will make application design much easier. During normal operation OMNIFETs react
STMicroelectronics
Original
VNB49N04 VNP35N07 VNB35N07 VNP28N04 VNV10N07 VNB10N07 VB020-4 Depletion MOSFET VN02N equivalent depletion mode current limiter VB020 VN02NSP equivalent VNW100N04 VNW50N04 VNP49N04 VNP49N04FI VNV49N04

OMNIFET

Abstract: omnifet ii VNS3NV04D ® "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET PRELIMINARY DATA TYPE VNS3NV04D RDS(on) 120 m (*) Ilim 3.5 A (*) Vclamp 40 V (*) (*)Per each device n n n n n , DESCRIPTION The VNS3NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended , DIODE OMNIFET S L=100uH B B 220 D R gen Vgen VDD I OMNIFET S 8.5 6
STMicroelectronics
Original

VNA7NV04D

Abstract: VNA7NV04D ® "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFETS TARGET SPECIFICATION TYPE , The VNA7NV04D is a device |formed by two| monolithic OMNIFET II chips housed in a standard SO-16 package with double island. The OMNIFET II are designed in STMicroelectronics VIPower M0 Technology , chip) A A D I FAST DIODE OMNIFET S L=100uH B B 25 D Rgen Vgen VDD I OMNIFET S 8.5 6/10 1 VNA7NV04D Fig. 3: Unclamped Inductive Load Test
STMicroelectronics
Original

VNS1NV04D

Abstract: B330D VNS1NV04D ® "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET PRELIMINARY DATA TYPE , DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 SO-8 Technology: they are , ) t Fig.2: Test Circuit for Diode Recovery Times A A D I FAST DIODE OMNIFET S L=100uH B B 330 D R gen Vgen VDD I OMNIFET S 8.5 6/11 1
STMicroelectronics
Original
B330D

B330D

Abstract: VNS1NV04D VNS1NV04D ® "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET TYPE VNS1NV04D RDS(on) 250 , VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 SO-8 Technology: they are intended for , ) t Figure 2: Test Circuit for Diode Recovery Times A A D I FAST DIODE OMNIFET S L=100uH B B 330 D R gen Vgen VDD I OMNIFET S 8.5 6/14 1
STMicroelectronics
Original

OMNIFET

Abstract: JESD97 VNS3NV04D-E "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET Features RDS(on) TYPE , MOSFET SO-8 The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are , is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. Order , Times A A D I FAST DIODE OMNIFET S L=100uH B B 220W D Rgen V gen V DD I OMNIFET S 8.5 W 8/17 VNS3NV04D-E Figure 6. 4 Test circuit diagrams
STMicroelectronics
Original
VNS3NV04TR-E JESD97

VNS3NV04D

Abstract: VNS3NV04D ® "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET TYPE VNS3NV04D RDS(on) 120 , VNS3NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement , ) t Fig.2: Test Circuit for Diode Recovery Times A A D I FAST DIODE OMNIFET S L=100uH B B 220 D R gen Vgen VDD I OMNIFET S 8.5 6/14 1
STMicroelectronics
Original

OMNIFET

Abstract: VNS3NV04D VNS3NV04D ® "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET TYPE VNS3NV04D RDS(on) 120 m (*) Ilim 3.5 A (*) Vclamp 40 V (*) (*)Per each device n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP n LOW CURRENT DRAWN FROM INPUT PIN n , a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET , DIODE OMNIFET S L=100uH B B 220 D Rgen Vgen VDD I OMNIFET S 8.5 6
STMicroelectronics
Original

VN1160

Abstract: VN1160T Complete H-Bridge (2 H.S.D. + 2 PowerMOS) Complete H-Bridge (2 H.S.D. + 2 OMNIFET) Complete H-Bridge (2 H.S.D. + 2 OMNIFET) Direction Indicator Driver for Motorbike Direction Indicator Driver for Motorbike , 2 OMNIFET) Glow plug for diesel motors SMPS Primary ICs Type BVDSS (V) VIPer20 VIPer20SP , ; · in development. OMNIFETs - Autoprotected Power MOSFETs Type VNP35NV04 VNB35NV04 VNV35NV04 , -82FM ISOWATT220 SOT-223 SO-8 DPAK IPAK SO-8/2 VIPower, VIPer, OMNIFET, PowerSO-10, PowerSO-20, PENTAWATT
STMicroelectronics
Original
VND610 VN02H VB024 VN1160 VN1160T st VN1160 PENTAWATT VN116 VN330SP VN340SP VN450 VND05B VND05BSP VND10B

OMNIFET

Abstract: DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended , I FAST DIODE OMNIFET S L=100uH B B 330â"¦ D Rgen Vgen VDD I OMNIFET S 8.5 â"¦ 6/14 1 VNS1NV04D Figure 3: Unclamped Inductive Load Test Circuits
STMicroelectronics
Original

omnifet ii

Abstract: DESCRIPTION The VNS3NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended , ) t Fig.2: Test Circuit for Diode Recovery Times A A D I FAST DIODE OMNIFET S L=100uH B B 220â"¦ D Rgen Vgen VDD I OMNIFET S 8.5 â"¦ 6/14 1
STMicroelectronics
Original

CWC1

Abstract: L-12129 VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1 ® "OMNIFET II": FULLY AUTOPROTECTED POWER , Diode Recovery Times A A D I FAST DIODE OMNIFET S L=100uH B B 150 D Rgen Vgen VDD I OMNIFET S 8.5 6/29 1 VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04 , ) Thermal fitting model of an OMNIFET II in DPAK 10 100 1000 Pulse calculation formula Z TH , 0.001 0.01 0.1 1 T ime (s) Thermal fitting model of an OMNIFET II in SO-8 10 100
STMicroelectronics
Original
VNN7NV0413TR VNS7NV0413TR VND7NV0413TR CWC1 L-12129 FC01000

VND14NV04

Abstract: VNB14NV04 ® VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB14NV04 RDS(on) Ilim Vclamp 3 VND14NV04 VND14NV04-1 1 , D I FAST DIODE OMNIFET S L=100uH B B 25 D Rgen Vgen VDD I OMNIFET , ) Thermal fitting model of an OMNIFET II in DPAK 10 100 1000 Pulse calculation formula Z TH , 0.0001 0.001 0.01 0.1 1 Time (s) Thermal fitting model of an OMNIFET II in D2PAK 10
STMicroelectronics
Original
VNB14NV0413TR VND14NV0413TR

VNS3NV04P

Abstract: OMNIFET IIITM . 10 , OMNIFETTM . 9 , . 20 OMNIFET part numbering scheme. 21 OMNIFET , . 22 Note: M0-7 High side switches and OMNIFET III are to be preferred for new design-in. 2 , applications â'¢ â'¢ â'¢ OMNIFETTM SMART POWER LOW-SIDE SWITCHES Part number VND1NV04-E VND1NV04â
STMicroelectronics
Original
VNS3NV04P SGCAR1013 TQFP64 SSO-12/16 SSO-36 SO-10

VNS1NV04DP

Abstract: VNS1NV04D VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance(1 , formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed , recovery times A D I A FAST DIODE OMNIFET S B L=100uH B 330 Rgen I D VDD OMNIFET , Functions » Low Side Switches » VNS1NV04D VNS1NV04D Active OMNIFET II :FULLY AUTOPROTECTED POWER , /automotive/product/65690.jsp 23-4-2012 ® VNS1NV04D "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET
STMicroelectronics
Original
VNS1NV04DP vns1nv04dpe 2002/95/EC VNS1NV04DPTR-E

VNB35

Abstract: ® VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET PRELIMINARY DATA TYPE VNB35NV04 VNP35NV04 VNV35NV04 VNW35NV04 RDS(on) 10 m Ilim Vclamp 10 30 A 40 V 1 3 1 D2PAK PowerSO-10TM n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT , Vgen t Fig.2: Test Circuit for Diode Recovery Times A D I A FAST DIODE OMNIFET S 25 B L=100uH B D Rgen VDD I OMNIFET S Vgen 8.5 6/15 1 VNB35NV04
STMicroelectronics
Original
VNB35 SO-10TM
Showing first 20 results.