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OA-31 Datasheet

Part Manufacturer Description PDF Type
OA31 N/A OA31 is an OR / AND circuit providing the logical function Q = [ (A+B+C)D ] Original
OA-31 National Semiconductor OA-31 Current Feedback Amplifiers Original
OA31 N/A Shortform Semicon, Diode, and SCR Datasheets Scan

OA-31

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: CUB OA31 R Austria Mikro Systeme International 0.6 um CMOS OA31 is an OR / AND circuit providing the logical function Q = [ (A+B+C).D ]. Truth Table Capacitance A B C D Q L X X X H L X X H X L X H X X X L H H H Ci (pF) L L H H H A B C D OA31 A B C Q D Area 0.81 mils Power 2 2.40 uW / MHz Delay [ns] = tpd. = f(SL, L) Output Slope [ns] = op_sl. = f(L) AC Characteristics : 0.055 0.055 0.063 -
Original
H 498
Abstract: National Semiconductor OA-31 November 1992 In their effort to approximate the ideal op amp , familiar non-inverting amplifier transfer characteristic (3) www.national.com OA-31 The , gain. (2) Current Feedback Amplifiers Current Feedback Amplifiers OA-31 The , in the settling-time characteristic of the device. 3 www.national.com OA-31 Slew-Rate Limiting OA-31 The Current-Feedback Amplifier When the amplifier loop is closed as in Figure 4b National Semiconductor
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741 voltage follower pin diagram of 741 op-amp pin diagram of op-amp ic 741 OP-AMP ic 741 datasheet 741 op amp IC 741 amp
Abstract: /OA222D2/OA222D4 3-137 OA2222/OA2222D2/OA2222D4 3-141 OA31/OA31D2/OA31D4 3-145 OA311 3-147 OA3111 3-148 OA32 3-149 OA321 3-150 OA322 3-151 OA33 Samsung ASIC Samsung Electronics
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AO222 OA211 diode oa31 diode AO211 ND3B LD5Q STD131
Abstract: /OA222D2/OA222D4 3-147 OA2222/OA2222D2/OA2222D4 3-141 OA31/OA31D2/OA31D4 3-151 OA311/OA311D2 3-155 OA3111/OA3111D2 3-157 OA32/OA32D2 3-159 OA321/OA321D2 3-162 OA322 Samsung Electronics
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STDH150 FD6S SCG12 AO2222 FD2D2 oa221 AO322D2
Abstract: /OA222D2/OA222D4 3-148 OA2222/OA2222D2/OA2222D4 3-152 OA31/OA31D2/OA31D4 3-153 OA311/OA311D2 3-158 OA3111/OA3111D2 3-160 OA32/OA32D2 3-163 OA321/OA321D2 3-165 OA322 Samsung Electronics
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STD150 FD3S MX2D2 AO322 FD1S SCG16 ND2D8
Abstract: .3-179 STD110 vi SEC ASIC Contents OA31/OA31D2/ OA311/OA311D2/ OA3111/OA3111D2 Samsung Electronics
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dl2d FD2QD2 LD1A Samsung 546 MDL110 PLL2013X
Abstract: .3-179 OA31/OA31D2/ Samsung ASIC v STDM110 Contents OA311/OA311D2/ Samsung Electronics
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samsung 413 standard cell library SCG3 Samsung ASIC samsung 431 LD6QD2
Abstract: .3-141 OA31/OA31D2/ OA311 .3-147 OA3111 Samsung Electronics
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STD130 OA2111 PLL2073X
Abstract: .3-172 OA31/OA31D2/ OA311/OA311D2/ OA3111/OA3111D2 Samsung Electronics
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pci ck16 ao21 ao32d4 FD2S ix 3394 STD90/MDL90 AL2007LX AL2007LA
Abstract: .3-141 OA31/OA31D2/ OA311 .3-147 OA3111 Samsung Electronics
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IX 3354 ND2D2
Abstract: .3-179 OA31/OA31D2/ STD111 vi Samsung ASIC Contents OA311/OA311D2/ OA3111/OA3111D2 Samsung Electronics
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ix 3368 OA321D2 AO4111 LD2D2
Abstract: C C 0 I/0 2 6O N 27 0 A 70 I/O A 1 20 A « 0 N C0 A50 Ä1S0 Ae Q l/Oa-31 Data Inputs/Outputs A o -
OCR Scan
WF1M32B-XXX3 WF1M32B-XG2TX3 WF1M32B-XHX3
Abstract: Internal Macrocells Cell Name oa311 oa3111 oa31d2 oa31d4 oa32 oa32d2 oa321 oa321d2 oa322 , oa22d4 oa22d4a oa31 Q QN Q Q Q QN Q QN Q QN Q QN Q QN Q QN Q Q Q QN Q QN Q Q Samsung Electronics
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AO331 ha 1452 nr2d2 Y 335 300MH
Abstract: n d N o t C o n n e c te d l/Oa-31 D a ta In p u ts /O u tp u ts A d d r e s s in p u ts W r ite E n -
OCR Scan
WS256K32-XXX S256K S256K32-XG WS256K32N-XHX AO-17 256K32
Abstract: Unit MH52236BJ-7 MH52236BJ - S MH52236BJ-10 DO oâ'"31 MP 0 â'" 3 DQ0~3t MPO-3 DO 0 -
OCR Scan
MH52236BJ-8 M5M44256BJ 44256 001C mitsubishi power module 524288-WORD 36-BIT MH52236B010 18874368-BIT S24288-WORD
Abstract: oa2222d2 oa2222d4 oa222d2 oa222d4 oa22a oa22d2 oa22d2a oa22d4 oa22d4a oa31 oa311 oa3111 oa31d2 oa31d4 oa32 oa321 oa322 oa33 or2 or2b or2bd2 or2bd4 or2bd8 or2d2 or2d4 or2d8 or3 Output Samsung Electronics
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Abstract: oa2222 oa2222d2 oa2222d4 oa222d2 oa222d4 oa22a oa22d2 oa22d2a oa22d4 oa22d4a oa31 oa311 oa3111 oa31d2 oa31d4 oa32 oa321 oa322 oa33 or2 or2b or2bd2 or2bd4 or2bd8 or2d2 or2d4 or2d8 Samsung Electronics
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113 y HA 1329 QN-08 1329 y-448
Abstract: Name oa311 oa3111 oa31d2 oa31d4 oa32 oa32d2 oa321 oa321d2 oa322 oa322d2 oa33 oa33d2 or2 , oa31 Q QN Q Q Q QN Q QN Q QN Q QN Q QN Q QN Q Q Q QN Q QN Q Q Y Y Y Y YN Samsung Electronics
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FD3D2 NID4 ND2B FD4D2 FD2Q
Abstract: /Oa-31 A o-18 Data Inputs/Outputs Address Inputs SRAM W rite Enables SRAM Chip Select Output Enable -
OCR Scan
WSF512K32-29XX WSF512K32-29H2X 512K32
Abstract: its S ymbol M H 26636BJ-7 Parameter M Po~3 DO oâ'"31 M in M H 26636BJ-8 Max 140 -
OCR Scan
MH26636BJ-7 44256BJ 26636BJ-10 44266BJ H26636B
Abstract: National Semiconductor OA-31 November 1992 In their effort to approximate the ideal op amp , familiar non-inverting amplifier transfer characteristic (3) www.national.com OA-31 The , gain. (2) Current Feedback Amplifiers Current Feedback Amplifiers OA-31 The , in the settling-time characteristic of the device. 3 www.national.com OA-31 Slew-Rate Limiting OA-31 The Current-Feedback Amplifier When the amplifier loop is closed as in Figure 4b -
OCR Scan
1311 STAC64- BDICK01 STAC64 SD-34729-020
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