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OA-31 Datasheet

Part Manufacturer Description PDF Type
OA31 N/A OA31 is an OR / AND circuit providing the logical function Q = [ (A+B+C)D ] Original
OA-31 National Semiconductor OA-31 Current Feedback Amplifiers Original
OA31 N/A Shortform Semicon, Diode, and SCR Datasheets Scan

OA-31

Catalog Datasheet MFG & Type PDF Document Tags

H 498

Abstract: OA31 CUB OA31 R Austria Mikro Systeme International 0.6 µm CMOS OA31 is an OR / AND circuit providing the logical function Q = [ (A+B+C).D ]. Truth Table Capacitance A B C D Q L X X X H L X X H X L X H X X X L H H H Ci (pF) L L H H H A B C D OA31 A B C Q D Area 0.81 mils Power 2 2.40 µW / MHz Delay [ns] = tpd. = f(SL, L) Output Slope [ns] = op_sl. = f(L) AC Characteristics : 0.055 0.055 0.063
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Original
H 498

741 voltage follower

Abstract: 741 op amp IC device data hand book parameters National Semiconductor OA-31 November 1992 In their effort to approximate the ideal op amp , familiar non-inverting amplifier transfer characteristic (3) www.national.com OA-31 The , gain. (2) Current Feedback Amplifiers Current Feedback Amplifiers OA-31 The , in the settling-time characteristic of the device. 3 www.national.com OA-31 Slew-Rate Limiting OA-31 The Current-Feedback Amplifier When the amplifier loop is closed as in Figure 4b
National Semiconductor
Original
741 voltage follower 741 op amp IC device data hand book parameters A New Approach to Op Amp Design Comlinear 300-1 pin diagram of 741 op-amp pin diagram of op-amp ic 741 741 op amp

AO222

Abstract: OA211 diode /OA222D2/OA222D4 3-137 OA2222/OA2222D2/OA2222D4 3-141 OA31/OA31D2/OA31D4 3-145 OA311 3-147 OA3111 3-148 OA32 3-149 OA321 3-150 OA322 3-151 OA33 Samsung ASIC
Samsung Electronics
Original
AO222 OA211 diode oa31 diode ND3B AO211 AO2222 STD131

AO222

Abstract: FD6S /OA222D2/OA222D4 3-147 OA2222/OA2222D2/OA2222D4 3-141 OA31/OA31D2/OA31D4 3-151 OA311/OA311D2 3-155 OA3111/OA3111D2 3-157 OA32/OA32D2 3-159 OA321/OA321D2 3-162 OA322
Samsung Electronics
Original
STDH150 FD6S SCG12 FD2QD2 FD2D2 NR2A AO322D2

FD6S

Abstract: ND3B /OA222D2/OA222D4 3-148 OA2222/OA2222D2/OA2222D4 3-152 OA31/OA31D2/OA31D4 3-153 OA311/OA311D2 3-158 OA3111/OA3111D2 3-160 OA32/OA32D2 3-163 OA321/OA321D2 3-165 OA322
Samsung Electronics
Original
STD150 FD3S MX2D2 AO322 FD1S ND2B SCG16

AO222

Abstract: dl2d .3-179 STD110 vi SEC ASIC Contents OA31/OA31D2/ OA311/OA311D2/ OA3111/OA3111D2
Samsung Electronics
Original
dl2d Samsung 546 LD1A MDL110 PLL2013X

dl2d

Abstract: LD1A .3-179 OA31/OA31D2/ Samsung ASIC v STDM110 Contents OA311/OA311D2/
Samsung Electronics
Original
standard cell library samsung 413 SCG3 samsung 431 transistor 341 20P Samsung ASIC

OA2111

Abstract: AO222 .3-141 OA31/OA31D2/ OA311 .3-147 OA3111
Samsung Electronics
Original
STD130 OA2111 CHAPTER 1 Introduction to Power Semiconductors PLL2073X

pci ck16

Abstract: AO2222 .3-172 OA31/OA31D2/ OA311/OA311D2/ OA3111/OA3111D2
Samsung Electronics
Original
pci ck16 FD2S ao21 ao32d4 ix 3394 STD90/MDL90 AL2007LX AL2007LA

IX 3354

Abstract: ND2D2 .3-141 OA31/OA31D2/ OA311 .3-147 OA3111
Samsung Electronics
Original
IX 3354 ND2D2

Samsung ASIC

Abstract: ix 3368 .3-179 OA31/OA31D2/ STD111 vi Samsung ASIC Contents OA311/OA311D2/ OA3111/OA3111D2
Samsung Electronics
Original
ix 3368 OA321D2 AO4111 LD2D2

WF1M32B-XXX3

Abstract: C C 0 I/0 2 6O N 27 0 A 70 I/O A 1 20 A « 0 N C0 A50 Ä1S0 Ae Q l/Oa-31 Data Inputs/Outputs A o
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OCR Scan
WF1M32B-XXX3 WF1M32B-XG2TX3 WF1M32B-XHX3

AO331

Abstract: ha 1452 Internal Macrocells Cell Name oa311 oa3111 oa31d2 oa31d4 oa32 oa32d2 oa321 oa321d2 oa322 , oa22d4 oa22d4a oa31 Q QN Q Q Q QN Q QN Q QN Q QN Q QN Q QN Q Q Q QN Q QN Q Q
Samsung Electronics
Original
AO331 ha 1452 Y 335 nr2d2 300MH
Abstract: n d N o t C o n n e c te d l/Oa-31 D a ta In p u ts /O u tp u ts A d d r e s s in p u ts W r ite E n -
OCR Scan
WS256K32-XXX S256K S256K32-XG WS256K32N-XHX AO-17 256K32

M5M44256BJ

Abstract: 44256 Unit MH52236BJ-7 MH52236BJ - S MH52236BJ-10 DO oâ'"31 MP 0 â'" 3 DQ0~3t MPO-3 DO 0
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OCR Scan
MH52236BJ-8 M5M44256BJ 44256 001C mitsubishi power module 524288-WORD 36-BIT MH52236B010 18874368-BIT S24288-WORD

AO211

Abstract: STD130 oa2222d2 oa2222d4 oa222d2 oa222d4 oa22a oa22d2 oa22d2a oa22d4 oa22d4a oa31 oa311 oa3111 oa31d2 oa31d4 oa32 oa321 oa322 oa33 or2 or2b or2bd2 or2bd4 or2bd8 or2d2 or2d4 or2d8 or3 Output
Samsung Electronics
Original
SAMSUNG 834

113 y

Abstract: HA 1329 oa2222 oa2222d2 oa2222d4 oa222d2 oa222d4 oa22a oa22d2 oa22d2a oa22d4 oa22d4a oa31 oa311 oa3111 oa31d2 oa31d4 oa32 oa321 oa322 oa33 or2 or2b or2bd2 or2bd4 or2bd8 or2d2 or2d4 or2d8
Samsung Electronics
Original
113 y HA 1329 QN-08 1329 y-448

ND3B

Abstract: AO222 Name oa311 oa3111 oa31d2 oa31d4 oa32 oa32d2 oa321 oa321d2 oa322 oa322d2 oa33 oa33d2 or2 , oa31 Q QN Q Q Q QN Q QN Q QN Q QN Q QN Q QN Q Q Q QN Q QN Q Q Y Y Y Y YN
Samsung Electronics
Original
FD3D2 OA221 FD2Q FD4D2 NID4
Abstract: /Oa-31 A o-18 Data Inputs/Outputs Address Inputs SRAM W rite Enables SRAM Chip Select Output Enable -
OCR Scan
WSF512K32-29XX WSF512K32-29H2X 512K32

44256BJ

Abstract: its S ymbol M H 26636BJ-7 Parameter M Po~3 DO oâ'"31 M in M H 26636BJ-8 Max 140
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OCR Scan
44256BJ MH26636BJ-7 26636BJ-10 44266BJ H26636B

1311

Abstract: National Semiconductor OA-31 November 1992 In their effort to approximate the ideal op amp , familiar non-inverting amplifier transfer characteristic (3) www.national.com OA-31 The , gain. (2) Current Feedback Amplifiers Current Feedback Amplifiers OA-31 The , in the settling-time characteristic of the device. 3 www.national.com OA-31 Slew-Rate Limiting OA-31 The Current-Feedback Amplifier When the amplifier loop is closed as in Figure 4b
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OCR Scan
1311 BDICK01 STAC64 SD-34729-020
Showing first 20 results.