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Part : NTE312 Supplier : NTE Electronics Manufacturer : Newark element14 Stock : 791 Best Price : $1.45 Price Each : $1.64
Part : NTE3120 Supplier : NTE Electronics Manufacturer : Newark element14 Stock : - Best Price : $2.00 Price Each : $2.15
Part : NTE3120 Supplier : NTE Electronics Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : NTE3120A Supplier : NTE Electronics Manufacturer : Newark element14 Stock : 64 Best Price : $2.02 Price Each : $2.41
Part : NTE3122 Supplier : NTE Electronics Manufacturer : Newark element14 Stock : 1,342 Best Price : $1.63 Price Each : $1.90
Part : NTE3123 Supplier : NTE Electronics Manufacturer : Newark element14 Stock : 966 Best Price : $3.71 Price Each : $4.19
Part : NTE312 Supplier : NTE Electronics Manufacturer : Chip1Stop Stock : 100 Best Price : $1.3694 Price Each : $1.6049
Part : NTE312 Supplier : NTE Electronics Manufacturer : Master Electronics Stock : 20 Best Price : $1.20 Price Each : $1.80
Part : NTE3120 Supplier : NTE Electronics Manufacturer : Master Electronics Stock : 3 Best Price : $1.75 Price Each : $2.05
Part : NTE3123 Supplier : NTE Electronics Manufacturer : Master Electronics Stock : 9 Best Price : $3.07 Price Each : $4.60
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NTE312 Datasheet

Part Manufacturer Description PDF Type
NTE312 NTE Electronics N-Channel Silicon Junction Field Effect Transistor Original
NTE3120 NTE Electronics Silicon NPN Phototransistor Detector Original
NTE3122 NTE Electronics Phototransistor Silicon NPN, Narrow Acceptance, High Sensitivity, Darlington Original
NTE3123 NTE Electronics Phototransistor Silicon NPN, Intermediate Acceptance, High Sensitivity, Darlington Original

NTE312

Catalog Datasheet MFG & Type PDF Document Tags

NTE312

Abstract: N-Channel Silicon Junction Field Effect Transistor NTE312 N­Channel Silicon Junction Field Effect Transistor Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO­92 package. Features: D High Power Gain: 10dB Min at 400MHz D High Transconductance: 4000 µmho Min at 400MHz D Low Crss: 1pF Max D High (Yfs) / Ciss Ratio (High­Frequency Figure­of­Merit) D Drain and Gate Leads Separated for High Maximum Stable Gain D Cross­Modulation Minimized by Square­Law Transfer Characteristic
NTE Electronics
Original
N-Channel Silicon Junction Field Effect Transistor 400MH 100MH

100 amp npn darlington power transistors

Abstract: NTE290A Effect Transistors (JFET) Stock No. 70215783 70215785 70214771 70214696 Mfr.'s Type NTE133 NTE312 NTE326
Allied Electronics Catalog
Original
NTE382 NTE290A NTE159 NTE128 NTE123AP NTE2387 100 amp npn darlington power transistors IC 741 amp 10 amp npn darlington power transistors NTE289A NTE385 NTE184 NTE196 NTE181 NTE175

NTE 956

Abstract: 54IH NTE312 Diagram 11 Diagram 10 3 8 0 (9.56) 1 8 0 ( 4 57) + 50 .oo 0 .1 3 2 (3 3 5 ) D ia Tab
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OCR Scan
NTE 956 54IH NC3A T0220 T0247

NTE199

Abstract: NTE2324 NTE312 1.52 NTE — MTP1N100E 1.87 ONS 847 NE5534N 0.72 PHI 855 NTE1924 5.02 NTE — NTE323 4.87 NTE —
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Original
NTE102A NTE2324 NTE109 NTE116 NTE2354 NTE126 NTE199 NTE262 nte222 NTE3098 NTE192A MPX2010GS MTP75N06HD NTE2312 MPX2050DP MTP8N50E

STk442-130

Abstract: M56730ASP NTE3120 Silicon NPN Phototransistor Detector Features: D High Sensitivity D GaAs LED­Wide Spectral Range, with GaAs LED. D Low Dark Current D Side­View Plastic Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter­Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MCM in One Catalog
Original
STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A A3141LUA A3212ELHLT A3280LLHLT A3515EUA A3515LUA A3516LUA

220v AC voltage stabilizer schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram /nte3120A.pdf 2 of 3 NTE PART NO , NTE5558â'I NTE3120A ,  TOâ
Mouser Catalog
Original
220v AC voltage stabilizer schematic diagram 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR NTE3122 Phototransistor Silicon NPN, Narrow Acceptance, High Sensitivity, Darlington Features: D Epoxy Resin Package D Narrow Acceptance: q = ±13° Typ D High Sensitivity: IC = 1.5mA Min @ Ee = 0.1mW/cm2 D Visible Light Cut­Off Applications: D VCRs, Cassette Tape Recorders D Floppy Disk Drives D Optoelectronic Switches D Automatic Stroboscopes Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . .
Element14 Catalog
Original
Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 CY8C38 CY8C29 A000046 A000047 A000005 A000010

SEMICON INDEXES

Abstract: Ericsson SPO 1410 NTE3123 Phototransistor Silicon NPN, Intermediate Acceptance, High Sensitivity, Darlington Features: D Epoxy Resin Package D Compact D Intermediate Acceptance: q = ±40° Typ D Visible Light Cut­Off Applications: D VCRs D Optoelectronic Switches Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter­Collector Voltage, VECO . . . . .
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OCR Scan
SEMICON INDEXES Ericsson SPO 1410 tr/NEC Tokin 0d 108 irfp240f appian adi/2 e420 dual jfet VV276