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ISL28407FBZ-T13 Intersil Corporation Precision Quad Low Noise Operational Amplifier; SOIC14; Temp Range: -40° to 125°C
ISL28407FBZ-T7 Intersil Corporation Precision Quad Low Noise Operational Amplifier; SOIC14; Temp Range: -40° to 125°C
ISL28407FBZ-T7A Intersil Corporation Precision Quad Low Noise Operational Amplifier; SOIC14; Temp Range: -40° to 125°C
ISL28407FBZ Intersil Corporation Precision Quad Low Noise Operational Amplifier; SOIC14; Temp Range: -40° to 125°C
SNJ5407FK Texas Instruments Hex Buffers/Drivers With Open-Collector High-Voltage Outputs 20-LCCC -55 to 125

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NT 407 F transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: S< L UPP VT NQA L OP NT ?Z L OMJ K$ $$5$ 40+,2 6%77%3.0/ )%0+.*.%0-f NQA L P NT N , *.%0-f N UGU MGI $2-*+;%0> *2 , VT NQA L P NT ?Z L MJ K$ S``F k22 40+,2 6%77%3.0/ )%0+.*.%0-f S^ L UPP VT ?CZ L OMJ K$T `Q L , SK 260MB10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET ?- L MJ K$G 407,- %*8,23.-, -',).6.,+ OPP RMP MUP ;OIP> XYP ;UYP> Inverse diode ® SEMITOP 3 SEMIKRON
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NT 407 F MOSFET TRANSISTOR
Abstract: . DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD , gain PACKAGE DIMENSIONS (Units: mm) |S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz +0.2 2 +0.1 0.4 ­0.05 (1.9) 4 , your NEC sales representatives to order samples for evaluation (available in batches of 50). nt , Base Voltage CAUTION; This transistor uses high-frequency technology. Be careful not to allow Renesas Electronics
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2SC5178-T1 2SC5178-T2 NT 407 F power transistor t84 marking transistor NEC D 587
Abstract: . DATA SHEET SILICON TRANSISTOR 2SC5178R uc t NPN EPITAXIAL SILICON TRANSISTOR IN 4 , 2.9±0.2 (1.8) 0.95 0.85 evaluation (available in batches of 50). nt ABSOLUTE MAXIMUM RATINGS , +0.2 1.5 ­0.1 0.6 ­0.05 | S21 | 2 = 10.5 dB TYP. @VCE = 1 V, I C = 5 mA, f = 2 GHz 0.4 | S21 | 2 = 11.5 dB TYP. @VCE = 2 V, I C = 7 mA, f = 2 GHz 0.16 ­0.06 · Low current consumption and high gain This transistor uses high-frequency technology. Be careful not to allow excessive Renesas Electronics
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2SC5178R-T1 2SC5178R-T2 557 sot143
Abstract: RG = 100 k co nt 1 - 47 u F + D is 1 mA G = 80 dB -15 V FLAT VCE , . DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4885 uc t NPN SILICON EPITAXIAL TRANSISTOR 3 , . Collector PARAMETER co Collector Cutoff Current nt ELECTRICAL CHARACTERISTICS (Ta = 25 C , = 5 mA 150 3.5 GHz *1 VCE = 5 V, IC = 5 mA pF VCB = 5 V, IE = 0, f = 1 MHz 9.0 dB VCE = 5 V, IC = 5 mA, f = 1 GHz dB VCE = 5 V, IC = 5 mA, f = 1 GHz mV See Test Renesas Electronics
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NEC D 586 NT 407 F TRANSISTOR TO 220 741 vtvm transistor NEC D 986 NEC D 882 p R13* MARKING
Abstract: UHF Power Transistor MRA1000-3.5L Designed primarily for wideband, large­signal output and , , 1000 MHz 3.5 W BROADBAND UHF POWER TRANSISTOR · Built­In Matching Network for Broadband Operation , Common­Emitter Amplifier Small­Signal Gain (VCE = 19 V, Pin = 1 mW, f = 1 GHz, IC = 600 mA) GSS 10 ­ ­ dB Load Mismatch (VCE = 19 V, IC = 600 mA, Pout = 3.5 W, f = 1 GHz, Load VSWR = :1, All , CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1 MHz) FUNCTIONAL TESTS No Degradation in Motorola
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10 35L C5 2N2222 2N2222 motorola FERRITE TOROID motorola 2n2222 TIP41 MRA1000
Abstract: , N.T., Hong Kong. 852­26629298 4 Motorola Bipolar Power Transistor Device Data *MJE9780/D , * Advance Information PNP Silicon Power Transistor *Motorola Preferred Device The MJE9780 is , applications requiring a 150 volt PNP transistor. Features: PNP SILICON POWER TRANSISTOR 3.0 AMPERES 150 , best overall value. REV 7 © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data , , f = 1.0 MHz) fT MHz * Indicates Pulse Test: P.W. = 300 usec max, Duty Cycle = 2%. 2 Motorola
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Motorola Power Transistor Data Book MOTOROLA TRANSISTOR MOTOROLA TRANSISTOR 279 TRANSISTOR MOTOROLA transistor 0190 221A-06 220AB
Abstract: H Siali ford Microdevices SLN-407 DC-2.5 GHz 50 Ohm LNA MMIC Amplifier Product Description Stanford M icrodevices' SLN-407 is a high performance GaAs Heterojunction Bipolar Transistor (HBT) MMIC , C - 1 .0 G H z T h i r d O r d e r I n t e r c e p t Poi nt : Device Voltage f = 1 .0-2.5 G H z Id = , ultra-linear performance to 2.5 GHz, ideal for dual or tri-band applications. The SLN -407 needs only 2 , t i o n s Z Ù= 50 O h m s , Id = 7 m A f = D C - 1 .0 G H z f = 1 .0-2.5 G H z f = DC-2.5 GHz f = D -
OCR Scan
SLN-407
Abstract: Power Transistor TP3022B The TP3022B is designed for common­emitter operation in the 900 MHz , power output/driver transistor with state­of­the­ art ruggedness and reliability. · Specified 26 Volts , NPN SILICON UHF POWER TRANSISTOR · Class AB Operation MAXIMUM RATINGS Rating Symbol , 26 V, Pout = 15 W, f = 960 MHz, IQ = 50 mA) GPE 8.5 - - dB Collector Efficiency (VCE = 26 V, Pout = 15 W, f = 960 MHz, IQ = 50 mA) c 45 - - % Characteristic OFF Motorola
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motorola 572 transistor 5Bp power BALLAST MOTOROLA transistor 431 ab TP3022B/D
Abstract: dB, TO 1000 MHz 14 WATTS BROADBAND UHF POWER TRANSISTOR LIFETIME BUY CASE 145D­02, STYLE 1 , LAST SHIP 18/03/00 UHF Power Transistor ELECTRICAL CHARACTERISTICS - continued Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz , mW, f = 1.0 GHz, IC = 2.4 A) Load Mismatch (VCE = 19 V, IC = 2.4 A, Pout = 14 W, f = 1.0 GHz, Load VSWR = :1, All Phase Angles) Overdrive (VCE = 19 V, IC = 2.4 A, f = 1.0 GHz) (No degradation) Output Motorola
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14L/D MRA1000-14L MRA1000-14L/D
Abstract: BROADBAND UHF POWER TRANSISTOR LIFETIME BUY THERMAL CHARACTERISTICS Max 4.0 Unit °C/W ELECTRICAL , CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz) - - 22 pF FUNCTIONAL TESTS Common­Emitter Amplifier Small­Signal Gain (VCE = 19 V, f = 1.0 GHz, IC = 1.2 A) Load Mismatch (VCE = 19 V, IC = 1.2 A, Pout = 7.0 W, f = 1.0 GHz, Load VSWR = :1, All Phase Angles) Overdrive (VCE = 19 V, IC = 1.2 A, f = 1.0 GHz) (No degradation) Output Power, 1.0 dB Compression Point (VCE = 19 V, f = 1.0 GHz, IC = Motorola
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MOTOROLA 813 transistor MRA1000-7L/D
Abstract: UHF Power Transistor MRA1000-14L . . . designed primarily for wideband, large­signal output and , , TO 1000 MHz 14 WATTS BROADBAND UHF POWER TRANSISTOR · Built­In Matching Network for Broadband , Common­Emitter Amplifier Small­Signal Gain (VCE = 19 V, Pin = 1.0 mW, f = 1.0 GHz, IC = 2.4 A) GSS 8.0 - - dB Load Mismatch (VCE = 19 V, IC = 2.4 A, Pout = 14 W, f = 1.0 GHz, Load VSWR = :1, All Phase Angles) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz Motorola
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380SOE
Abstract: .COLLECTOR(CASE) DIM MILLIMETERS MIN MAX A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 , MJE803T NPN FIGURE 2 - SWITCHING TIMES TEST CIRCUIT (,. if < 10 nt 'UTY CYCtE â'¢ 1.0* For NPN ini , ) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate Ic-Vce limits of the transistor that must be -
OCR Scan
MJE700T MJE701T MJE800T MJE801T MJE702T MJE703T npn transistor nt 407 f 10 amp npn darlington power transistors 80 amp 30v npn darlington MJE802T
Abstract: UHF Power Transistor MRA1000-7L . . . designed primarily for wideband, large­signal output and , 9.0 dB, TO 1000 MHz 7.0 WATTS BROADBAND UHF POWER TRANSISTOR · Built­In Matching Network for , = 1.0 A, VCE = 5.0 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS Common­Emitter Amplifier Small­Signal Gain (VCE = 19 V, f = 1.0 GHz, IC = 1.2 A) Load Mismatch (VCE = 19 V, IC = 1.2 A, Pout = 7.0 W, f = 1.0 GHz, Load VSWR = :1, All Phase Motorola
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145D-02
Abstract: Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications , metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transistor has , W, 1.88 GHz RF POWER TRANSISTOR NPN SILICON · Specified 26 V, 1.88 GHz Characteristics Output , - dB Collector Efficiency (VCC = 26 V, Pout = 4 W, f = 1.88 GHz) 40 43 - % Load Mismatch (VCC = 26 V, Pout = 4.5 W, ICQ = 40 mA, f = 1.88 GHz, Load VSWR = 3:1, All Phase Angles Motorola
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diode 1N4148 SMD PACKAGE DIMENSION motorola 1N4148 Transistor t 2 smd motorola SMD DIODE gp 317 power transistor bd135 motorola rf Power Transistor MRF6402/D
Abstract: Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications , metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transistor has , W, 1.88 GHz RF POWER TRANSISTOR NPN SILICON · Specified 26 V, 1.88 GHz Characteristics Output , Collector Efficiency (VCC = 26 V, Pout = 4 W, f = 1.88 GHz) 40 43 - % Load Mismatch (VCC = 26 V, Pout = 4.5 W, ICQ = 40 mA, f = 1.88 GHz, Load VSWR = 3:1, All Phase Angles at Frequency Motorola
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1N4148 5Bp smd transistor data BD135
Abstract: Linear Power Transistor TP5015 . . . designed for 24 Volt UHF large­signal common emitter amplifier , LINEAR POWER TRANSISTOR NPN SILICON · High Gain - 11 dB Min, Class AB · Gold Metallization for , , Pout = 15 W, f = 470 MHz, IQ = 50 mA) GPE 11 - - dB Collector Efficiency (VCE = 24 V, Pout = 15 W, f = 470 MHz, IQ = 50 mA) c 50 60 - % Characteristic OFF , = 100 mA, VCE = 10 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 Motorola
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TP5015/D
Abstract: F 0.075 0.085 1.91 2.15 H 0.160 0.170 4.07 4.31 J 0.004 0.006 0.11 0.15 K 0.090 0.110 £29 2.79 , Silicon RF Power Transistor The MRF6406 is designed for 1.88 GHz Personal Communications Network (PCN) base station applications. For ease of design, this transistor has an internally matched input. â , Migration â'¢ Silicon Nitride Passivated MAXIMUM RATINGS MRF6406 12 W, 1.88 GHz RF POWER TRANSISTOR NPN , (Vqb = 26 Vdc, lE = 0, f = 1 MHz) FUNCTIONAL TESTS Common-Emitter Amplifier Power Gain (Vqe = 26 -
OCR Scan
5Bp smd smd transistor 8g 100 pf, ATC Chip Capacitor 100A TRANSISTOR SMD p1 transistor bd135 Transistor AC 188 MRF6406/D 2PHX33607Q-0
Abstract: Transistor Device Data 3 MJE8503A PACKAGE DIMENSIONS ­T­ B SEATING PLANE C F T S , Ting Kok Road, Tai Po, N.T., Hong Kong. 852­26629298 4 Motorola Bipolar Power Transistor , * Advance Information SWITCHMODETM Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS - BVCES 80 WATTS The MJE8503A transistor is designed for , . 1995 Motorola Bipolar Power Transistor Device Data 1 MJE8503A ELECTRICAL CHARACTERISTICS (TC = Motorola
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motorola bipolar transistor bipolar transistor td tr ts tf Motorola Bipolar Power Transistor Data MJE8503A/D
Abstract: VCE(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT , Power MOSFET Transistor Device Data 1 MGP20N14CL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless , Input Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, Vd Vd f = 1.0 MHz) Transfer , 300 us, Duty Cycle 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL , Z L R V J G D N GATE COLLECTOR EMITTER COLLECTOR DIM A B C D F G H J Motorola
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108 motorola transistor motorola mosfet 632 transistor motorola 221A-09 motorola ignition transistor motorola transistor ignition MGP20N14CL/D
Abstract: IGBT Vce(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor , Transistor Device Data 1 MGP20N14CL ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted , Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Transfer Capacitance , Width 300 us, Duty Cycle 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL , ALLOWED. SEATING PLANE C F T S 4 A Q 1 2 3 STYLE 9: PIN 1. 2. 3. 4. U Motorola
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