NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

NT 407 F transistor

Catalog Datasheet Results Type PDF Document Tags
Abstract: H Siali ford Microdevices SLN-407 DC-2.5 GHz 50 Ohm LNA MMIC Amplifier Product Description Stanford M icrodevices' SLN-407 is a high performance GaAs Heterojunction Bipolar Transistor (HBT) MMIC , C - 1 .0 G H z T h i r d O r d e r I n t e r c e p t Poi nt : Device Voltage f = 1 .0-2.5 G H z Id = , ultra-linear performance to 2.5 GHz, ideal for dual or tri-band applications. The SLN -407 needs only 2 , t i o n s Z Ù= 50 O h m s , Id = 7 m A f = D C - 1 .0 G H z f = 1 .0-2.5 G H z f = DC-2.5 GHz f = D ... OCR Scan
datasheet

3 pages,
103.29 Kb

NT 407 F power transistor NT 407 F transistor SLN-407 SLN-407 abstract
datasheet frame
Abstract: Ting Kok Road, Tai Po, N.T., Hong Kong. 852­26629298 4 Motorola Bipolar Power Transistor , * Advance Information PNP Silicon Power Transistor *Motorola Preferred Device The MJE9780 MJE9780 is , applications requiring a 150 volt PNP transistor. Features: PNP SILICON POWER TRANSISTOR 3.0 AMPERES 150 , best overall value. REV 7 © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data , , f = 1.0 MHz) fT MHz * Indicates Pulse Test: P.W. = 300 µsec max, Duty Cycle = 2%. 2 ... Original
datasheet

4 pages,
75.13 Kb

transistor, motorola MJE9780 Motorola Bipolar Power Transistor Data motorola bipolar transistor MOTOROLA POWER TRANSISTOR 221A-06 MOTOROLA TRANSISTOR Motorola Power Transistor Data Book NT 407 F power transistor NT 407 F TRANSISTOR MJE9780/D MJE9780/D abstract
datasheet frame
Abstract: a Green m D is f u 12 5 d in ue nt co is D uc t Pr , DATA SHEET SILICON TRANSISTOR 2SC3604 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS (in mm) 3.8 MIN. E FEATURES 3.8 MIN. : NF = 1.6 dB TYP. @ f = 2.0 GHz C · High power gain : GA = 12 dB TYP. @ f = 2.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 , +150 °C nt 200 2.1 mW Tstg Storage Temperature 580 Tj Junction ... Original
datasheet

10 pages,
208.51 Kb

2SC1223 2SC2148 2SC2149 2SC2367 2SC3587 2SC3603 2SC3604 NEC NE "micro x" NEC NE "micro x" d NT 407 F power transistor NE AND micro-X 2SC2585 2SC2150 NT 407 F TRANSISTOR datasheet abstract
datasheet frame
Abstract: Transistor Device Data 3 MJE8503A MJE8503A PACKAGE DIMENSIONS ­T­ B SEATING PLANE C F T S , Ting Kok Road, Tai Po, N.T., Hong Kong. 852­26629298 4 Motorola Bipolar Power Transistor , * Advance Information SWITCHMODETM Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS - BVCES 80 WATTS The MJE8503A MJE8503A transistor is designed for , , Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 MJE8503A MJE8503A ELECTRICAL CHARACTERISTICS ... Original
datasheet

4 pages,
89.14 Kb

Motorola Bipolar Power Transistor Data MJE8503A bipolar transistor td tr ts tf motorola bipolar transistor NT 407 F power transistor NT 407 F TRANSISTOR MJE8503A/D MJE8503A/D abstract
datasheet frame
Abstract: IGBT Vce(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor , MOSFET Transistor Device Data 1 MGP20N14CL MGP20N14CL ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise , Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) Transfer Capacitance , 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL MGP20N14CL PACKAGE DIMENSIONS , PLANE C F T S 4 A Q 1 2 3 STYLE 9: PIN 1. 2. 3. 4. U H K GATE ... Original
datasheet

4 pages,
110.9 Kb

MOTOROLA TRANSISTOR TO-220 MGP20N14CL mosfet 407 NT 407 F power transistor NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR NT 407 F TRANSISTOR TO 220 MGP20N14CL/D MGP20N14CL/D abstract
datasheet frame
Abstract: IGBT Vce(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor , Transistor Device Data 1 MGP20N14CL MGP20N14CL ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted , Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Transfer Capacitance , Width 300 µs, Duty Cycle 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL MGP20N14CL , ALLOWED. SEATING PLANE C F T S 4 A Q 1 2 3 STYLE 9: PIN 1. 2. 3. 4. U ... Original
datasheet

4 pages,
79.55 Kb

MGP20N14CL NT 407 F MOSFET TRANSISTOR NT 407 F power transistor NT 407 F TRANSISTOR NT 407 F TRANSISTOR TO 220 MGP20N14CL/D MGP20N14CL/D abstract
datasheet frame
Abstract: Bandwidth Product f j = 30 MHz (Min) @ Iq = 500 mAdc TO-220AB Compact Package NPN M JE15032 JE15032* PNP M , , ffest =1-0 MHz) (1) Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. (2) f j = hfe I · fyestfT 30 , t, TIME (ms) Figure 2. Thermal Response 2 Motorola Bipolar Power Transistor Device Data MJE15032 MJE15032 MJE15033 MJE15033 There are two limitations on the power handling ability of a transistor: average , transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to ... OCR Scan
datasheet

8 pages,
235.51 Kb

transistor mje15032 mje15033 JE15032 transistor mje15033 NT 407 F power transistor NT 407 F transistor MJE15032/0 MJE15032/0 abstract
datasheet frame
Abstract: MJE15030 MJE15030, MJE15031 MJE15031 High Current Gain - Bandwidth Product f j = 30 MHz (Min) @ lc = 500 mAdc T 0 -2 2 0 A B , Cycle < 2.0%. (2) f j = I hfe I · ftest- v CE(sat) VßE(on) 30 - MHz t, TIME (ms) Figure 2. Thermal Response 2 Motorola Bipolar Power Transistor Device Data MJE15028 MJE15028 MJE15030 MJE15030 MJE15029 MJE15029 MJE15031 MJE15031 There are two limitations on the power handling ability of a transistor: average , transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to ... OCR Scan
datasheet

8 pages,
236.16 Kb

transistor mje15028 JE15029 JE15031 mje15031 MJE15031 transistor motorola mje15030 JE-15028 JE15030 NT 407 F power transistor NT 407 F transistor MJE15028/D JE15028 MJE15028/D abstract
datasheet frame
Abstract: - Bandwidth Product f j = 3.0 MHz (Min) @ lc = 500 mAdc · Compact 10-220 AB Package BD241C BD241C , 500 mAdc, VcE = 10 Vdc, f;est = 1 MHz) Small-Signal Current Gain (IC = 0.5 Adc, Vc e = 10 Vdc. f = 1 kHz) 1 Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. 2 f j = |hfe[ · f(est. fT 3.0 hfe 20 MHz , Switching Time Equivalent Circuit Figure 3. Tum-On Time 2 Motorola Bipolar Power Transistor Device , limitations on the power handling ability ot a transistor: average junction temperature and second break down. ... OCR Scan
datasheet

6 pages,
317.09 Kb

b0242b NT 407 F transistor NT 407 F power transistor BD241C/D BD241C/D abstract
datasheet frame
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W BFT92W PNP 4 GHz wideband transistor Product , Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W BFT92W FEATURES DESCRIPTION · High power gain Silicon PNP transistor in a plastic, SOT323 (S-mini) package. The BFT92W BFT92W uses , purpose transistor for wideband applications up to 2 GHz. 3 1 PIN DESCRIPTION 1 , -10 V 20 50 - Cre feedback capacitance IC = 0; VCB = -10 V; f = 1 MHz - 0.5 ... Original
datasheet

12 pages,
125.91 Kb

marking code 10 sot23 m1b marking BFT92W BFT92 NT 407 F TRANSISTOR TO 220 NT 407 F TRANSISTOR BFT92W abstract
datasheet frame

Datasheet Content (non pdf)

Abstract Saved from Date Saved File Size Type Download
Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
No abstract text available
www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFT92W_1.pdf)
NXP 23/10/2012 16125.31 Kb ZIP microwave_office_design_kit_rf_smal_signal_products.zip
No abstract text available
www.datasheetarchive.com/download/78883081-207768ZD/dev.zip (dev.pdf)
Xilinx 29/08/2001 1866.55 Kb ZIP dev.zip
No abstract text available
www.datasheetarchive.com/download/29657972-207767ZD/dev.tar.gz
Xilinx 30/08/2001 1862.53 Kb GZ dev.tar.gz
page 93 page 94 page 208 page 212 page 286 page 367 page 367 page 385 page 390 page 407 page 417 page . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 1.4.1 ISDN NT and PBX Applications . . . . ordered by Address . . . . . . . . . . . . . . . .407 16.8.4 HDLC-Channel Registers . . . . . . . . . . C165UTAH C165UTAH C165UTAH C165UTAH adresses all high feature ISDN TA, Intelligent NT or SOHO PBX designs, offering up to 18 MIPS C165UTAH C165UTAH C165UTAH C165UTAH OverviewPRELIMINARY PR EL IMI NA RY - EX CE RP T - 1.4 Typical Applications 1.4.1 ISDN NT and
www.datasheetarchive.com/files/infineon/mc_data/dave/products/c165utah.dip!/c165utah/documents/165utah_um_02_2000.pdf
Infineon 23/08/2002 7427.8 Kb DIP c165utah.dip
. . . . . . . . . . . . . .18 1.4.1 ISDN NT and PBX Applications . . . . . . . . . . . . . . . . . . Adapter with HDLC support. The C165H C165H C165H C165H adresses all high feature ISDN TA, Intelligent NT or SOHO PBX designs ISDN NT and PBX Applications The C165H C165H C165H C165H is designed to manage control message and data flow between the overview of the ISDN NT/PBX application for C165H C165H C165H C165H. Figure 3 C165H C165H C165H C165H in High Feature Intelligent
www.datasheetarchive.com/files/infineon/mc_data/dave/products/c165h.dip!/c165h/documents/d165h.pdf
Infineon 23/08/2002 6982.73 Kb DIP c165h.dip
tmori@lssl.rcast.u-tokyo.ac.jp +81-3-3481-4481 Magazine Transistor Technology JAPAN GIANLUCA DI TOTTO ING ALLIEDSIGNAL TURBO Casuarina Campus, Bldg.41 Darwin, NT, 0909 Australia emil.stamatoiu@ntu.edu.au +61 889466396 Web search 88652397966 Web news thierry jouannet ing projets siemens metering 30 av president auriol BP3150 BP3150 BP3150 BP3150 F /F., Block B. Kowloon. HONG KONG tinsang@netvigator.com 8523803609 Web WED micro search john spenik Ghost F NO Hekang puhni Betli iuoiu oiuoiu ghost@371.net 0086-98987987 Magazine iouoiu no any thing
www.datasheetarchive.com/files/scenix/htdocs/logs2/mailing_log
Intelligent NT or SOHO PBX designs, offering up to 18 MIPS along with legacy peripherals such as USART, SCI C161U C161U C161U C161U - LM P-MQFP-100 P-MQFP-100 P-MQFP-100 P-MQFP-100 515560657075 31 30 35 40 45 50 100 95 90 85 80 81 1 5 251510 20 BR KO UT 1 00M Q F T Q F P p inn ing C 16 1U TC K P3 . 8 VD D VS S CL KM O DEP3 . 6 P3 . 5 P3 . 3 VD DA XT AL 2 XT AL 1
www.datasheetarchive.com/files/infineon/mc_data/dave/products/c161u.dip!/c161u/documents/d161u.pdf
Infineon 23/08/2002 5732.94 Kb DIP c161u.dip
No abstract text available
www.datasheetarchive.com/download/90212243-999460ZC/dbookold.zip (DBOOKOLD.PDF)
Xilinx 07/09/1996 10340.01 Kb ZIP dbookold.zip
No abstract text available
www.datasheetarchive.com/download/20433182-93221ZC/mc9s12dp256_r11.zip (MC9S12DP256.pdf)
Elektronikladen 10/03/2002 2106.26 Kb ZIP mc9s12dp256_r11.zip