500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
ISL28407FBZ Intersil Corporation Precision Quad Low Noise Operational Amplifier; SOIC14; Temp Range: -40° to 125°C visit Intersil Buy

NT 407 F transistor

Catalog Datasheet MFG & Type PDF Document Tags

NT 407 F TRANSISTOR

Abstract: NT 407 F MOSFET TRANSISTOR S< L UPP VT NQA L OP NT ?Z L OMJ K$ $$5$ 40+,2 6%77%3.0/ )%0+.*.%0-f NQA L P NT N , *.%0-f N UGU MGI $2-*+;%0> *2 , VT NQA L P NT ?Z L MJ K$ S``F k22 40+,2 6%77%3.0/ )%0+.*.%0-f S^ L UPP VT ?CZ L OMJ K$T `Q L , SK 260MB10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET ?- L MJ K$G 407,- %*8,23.-, -',).6.,+ OPP RMP MUP ;OIP> XYP ;UYP> Inverse diode ® SEMITOP 3
SEMIKRON
Original
NT 407 F TRANSISTOR NT 407 F MOSFET TRANSISTOR

NT 407 F TRANSISTOR

Abstract: NT 407 F power transistor . DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD , gain PACKAGE DIMENSIONS (Units: mm) |S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz +0.2 2 +0.1 0.4 ­0.05 (1.9) 4 , your NEC sales representatives to order samples for evaluation (available in batches of 50). nt , Base Voltage CAUTION; This transistor uses high-frequency technology. Be careful not to allow
Renesas Electronics
Original
NT 407 F power transistor 2SC5178-T1 2SC5178-T2 t84 marking transistor NEC D 587

557 sot143

Abstract: 2SC5178 . DATA SHEET SILICON TRANSISTOR 2SC5178R uc t NPN EPITAXIAL SILICON TRANSISTOR IN 4 , 2.9±0.2 (1.8) 0.95 0.85 evaluation (available in batches of 50). nt ABSOLUTE MAXIMUM RATINGS , +0.2 1.5 ­0.1 0.6 ­0.05 | S21 | 2 = 10.5 dB TYP. @VCE = 1 V, I C = 5 mA, f = 2 GHz 0.4 | S21 | 2 = 11.5 dB TYP. @VCE = 2 V, I C = 7 mA, f = 2 GHz 0.16 ­0.06 · Low current consumption and high gain This transistor uses high-frequency technology. Be careful not to allow excessive
Renesas Electronics
Original
557 sot143 2SC5178R-T1 2SC5178R-T2

NT 407 F TRANSISTOR TO 220

Abstract: NEC D 586 RG = 100 k co nt 1 - 47 µ F + D is 1 mA G = 80 dB -15 V FLAT VCE , . DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4885 uc t NPN SILICON EPITAXIAL TRANSISTOR 3 , . Collector PARAMETER co Collector Cutoff Current nt ELECTRICAL CHARACTERISTICS (Ta = 25 C , = 5 mA 150 3.5 GHz *1 VCE = 5 V, IC = 5 mA pF VCB = 5 V, IE = 0, f = 1 MHz 9.0 dB VCE = 5 V, IC = 5 mA, f = 1 GHz dB VCE = 5 V, IC = 5 mA, f = 1 GHz mV See Test
Renesas Electronics
Original
NT 407 F TRANSISTOR TO 220 NEC D 586 transistor NEC D 986 741 vtvm R13* MARKING NEC D 882 p

10 35L C5

Abstract: 2N2222 UHF Power Transistor MRA1000-3.5L Designed primarily for wideband, large­signal output and , , 1000 MHz 3.5 W BROADBAND UHF POWER TRANSISTOR · Built­In Matching Network for Broadband Operation , Common­Emitter Amplifier Small­Signal Gain (VCE = 19 V, Pin = 1 mW, f = 1 GHz, IC = 600 mA) GSS 10 ­ ­ dB Load Mismatch (VCE = 19 V, IC = 600 mA, Pout = 3.5 W, f = 1 GHz, Load VSWR = :1, All , CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1 MHz) FUNCTIONAL TESTS No Degradation in
Motorola
Original
10 35L C5 2N2222 TIP41 FERRITE TOROID motorola 2n2222 TIP41 amplifier MRA1000

NT 407 F TRANSISTOR

Abstract: NT 407 F power transistor , N.T., Hong Kong. 852­26629298 4 Motorola Bipolar Power Transistor Device Data *MJE9780/D , * Advance Information PNP Silicon Power Transistor *Motorola Preferred Device The MJE9780 is , applications requiring a 150 volt PNP transistor. Features: PNP SILICON POWER TRANSISTOR 3.0 AMPERES 150 , best overall value. REV 7 © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data , , f = 1.0 MHz) fT MHz * Indicates Pulse Test: P.W. = 300 µsec max, Duty Cycle = 2%. 2
Motorola
Original
Motorola Power Transistor Data Book MOTOROLA TRANSISTOR MOTOROLA TRANSISTOR 279 transistor, motorola B 647 MOTOROLA POWER TRANSISTOR 220AB

NT 407 F transistor

Abstract: NT 407 F power transistor H Siali ford Microdevices SLN-407 DC-2.5 GHz 50 Ohm LNA MMIC Amplifier Product Description Stanford M icrodevices' SLN-407 is a high performance GaAs Heterojunction Bipolar Transistor (HBT) MMIC , C - 1 .0 G H z T h i r d O r d e r I n t e r c e p t Poi nt : Device Voltage f = 1 .0-2.5 G H z Id = , ultra-linear performance to 2.5 GHz, ideal for dual or tri-band applications. The SLN -407 needs only 2 , t i o n s Z Ù= 50 O h m s , Id = 7 m A f = D C - 1 .0 G H z f = 1 .0-2.5 G H z f = DC-2.5 GHz f = D
-
OCR Scan
SLN-407

motorola 572 transistor

Abstract: 5Bp power Power Transistor TP3022B The TP3022B is designed for common­emitter operation in the 900 MHz , power output/driver transistor with state­of­the­ art ruggedness and reliability. · Specified 26 Volts , NPN SILICON UHF POWER TRANSISTOR · Class AB Operation MAXIMUM RATINGS Rating Symbol , 26 V, Pout = 15 W, f = 960 MHz, IQ = 50 mA) GPE 8.5 - - dB Collector Efficiency (VCE = 26 V, Pout = 15 W, f = 960 MHz, IQ = 50 mA) c 45 - - % Characteristic OFF
Motorola
Original
motorola 572 transistor 5Bp power BALLAST MOTOROLA transistor 431 ab TP3022B/D
Abstract: dB, TO 1000 MHz 14 WATTS BROADBAND UHF POWER TRANSISTOR LIFETIME BUY CASE 145D­02, STYLE 1 , LAST SHIP 18/03/00 UHF Power Transistor ELECTRICAL CHARACTERISTICS - continued Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz , mW, f = 1.0 GHz, IC = 2.4 A) Load Mismatch (VCE = 19 V, IC = 2.4 A, Pout = 14 W, f = 1.0 GHz, Load VSWR = :1, All Phase Angles) Overdrive (VCE = 19 V, IC = 2.4 A, f = 1.0 GHz) (No degradation) Output Motorola
Original
14L/D MRA1000-14L MRA1000-14L/D

MOTOROLA 813 transistor

Abstract: BROADBAND UHF POWER TRANSISTOR LIFETIME BUY THERMAL CHARACTERISTICS Max 4.0 Unit °C/W ELECTRICAL , CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz) - - 22 pF FUNCTIONAL TESTS Common­Emitter Amplifier Small­Signal Gain (VCE = 19 V, f = 1.0 GHz, IC = 1.2 A) Load Mismatch (VCE = 19 V, IC = 1.2 A, Pout = 7.0 W, f = 1.0 GHz, Load VSWR = :1, All Phase Angles) Overdrive (VCE = 19 V, IC = 1.2 A, f = 1.0 GHz) (No degradation) Output Power, 1.0 dB Compression Point (VCE = 19 V, f = 1.0 GHz, IC =
Motorola
Original
MOTOROLA 813 transistor MRA1000-7L/D

MRA1000-14L

Abstract: BALLAST MOTOROLA UHF Power Transistor MRA1000-14L . . . designed primarily for wideband, large­signal output and , , TO 1000 MHz 14 WATTS BROADBAND UHF POWER TRANSISTOR · Built­In Matching Network for Broadband , Common­Emitter Amplifier Small­Signal Gain (VCE = 19 V, Pin = 1.0 mW, f = 1.0 GHz, IC = 2.4 A) GSS 8.0 - - dB Load Mismatch (VCE = 19 V, IC = 2.4 A, Pout = 14 W, f = 1.0 GHz, Load VSWR = :1, All Phase Angles) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz
Motorola
Original
380SOE

NT 407 F TRANSISTOR TO 220

Abstract: NT 407 F TRANSISTOR .COLLECTOR(CASE) DIM MILLIMETERS MIN MAX A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 , MJE803T NPN FIGURE 2 - SWITCHING TIMES TEST CIRCUIT (,. if < 10 nt 'UTY CYCtE â'¢ 1.0* For NPN ini , ) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate Ic-Vce limits of the transistor that must be
-
OCR Scan
MJE700T MJE701T MJE800T MJE801T MJE702T MJE703T npn transistor nt 407 f 10 amp npn darlington power transistors 80 amp 30v npn darlington MJE701

BALLAST MOTOROLA

Abstract: 145D-02 UHF Power Transistor MRA1000-7L . . . designed primarily for wideband, large­signal output and , 9.0 dB, TO 1000 MHz 7.0 WATTS BROADBAND UHF POWER TRANSISTOR · Built­In Matching Network for , = 1.0 A, VCE = 5.0 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS Common­Emitter Amplifier Small­Signal Gain (VCE = 19 V, f = 1.0 GHz, IC = 1.2 A) Load Mismatch (VCE = 19 V, IC = 1.2 A, Pout = 7.0 W, f = 1.0 GHz, Load VSWR = :1, All Phase
Motorola
Original
145D-02

diode 1N4148 SMD PACKAGE DIMENSION

Abstract: motorola 1N4148 Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications , metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transistor has , W, 1.88 GHz RF POWER TRANSISTOR NPN SILICON · Specified 26 V, 1.88 GHz Characteristics Output , - dB Collector Efficiency (VCC = 26 V, Pout = 4 W, f = 1.88 GHz) 40 43 - % Load Mismatch (VCC = 26 V, Pout = 4.5 W, ICQ = 40 mA, f = 1.88 GHz, Load VSWR = 3:1, All Phase Angles
Motorola
Original
diode 1N4148 SMD PACKAGE DIMENSION motorola 1N4148 Transistor t 2 smd motorola SMD DIODE gp 317 1N4148 BD135 MRF6402/D

motorola rf Power Transistor

Abstract: motorola 1N4148 Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications , metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transistor has , W, 1.88 GHz RF POWER TRANSISTOR NPN SILICON · Specified 26 V, 1.88 GHz Characteristics Output , Collector Efficiency (VCC = 26 V, Pout = 4 W, f = 1.88 GHz) 40 43 - % Load Mismatch (VCC = 26 V, Pout = 4.5 W, ICQ = 40 mA, f = 1.88 GHz, Load VSWR = 3:1, All Phase Angles at Frequency
Motorola
Original
motorola rf Power Transistor 5Bp smd transistor data

TP5015

Abstract: NT 407 F TRANSISTOR Linear Power Transistor TP5015 . . . designed for 24 Volt UHF large­signal common emitter amplifier , LINEAR POWER TRANSISTOR NPN SILICON · High Gain - 11 dB Min, Class AB · Gold Metallization for , , Pout = 15 W, f = 470 MHz, IQ = 50 mA) GPE 11 - - dB Collector Efficiency (VCE = 24 V, Pout = 15 W, f = 470 MHz, IQ = 50 mA) c 50 60 - % Characteristic OFF , = 100 mA, VCE = 10 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, IE = 0, f = 1.0
Motorola
Original
TP5015/D

5Bp smd

Abstract: smd transistor 8g F 0.075 0.085 1.91 2.15 H 0.160 0.170 4.07 4.31 J 0.004 0.006 0.11 0.15 K 0.090 0.110 £29 2.79 , Silicon RF Power Transistor The MRF6406 is designed for 1.88 GHz Personal Communications Network (PCN) base station applications. For ease of design, this transistor has an internally matched input. â , Migration â'¢ Silicon Nitride Passivated MAXIMUM RATINGS MRF6406 12 W, 1.88 GHz RF POWER TRANSISTOR NPN , (Vqb = 26 Vdc, lE = 0, f = 1 MHz) FUNCTIONAL TESTS Common-Emitter Amplifier Power Gain (Vqe = 26
-
OCR Scan
5Bp smd smd transistor 8g Bd135 smd transistor bd135 MPS 1842 ATC100A MRF6406/D 2PHX33607Q-0

NT 407 F TRANSISTOR

Abstract: NT 407 F power transistor Transistor Device Data 3 MJE8503A PACKAGE DIMENSIONS ­T­ B SEATING PLANE C F T S , Ting Kok Road, Tai Po, N.T., Hong Kong. 852­26629298 4 Motorola Bipolar Power Transistor , * Advance Information SWITCHMODETM Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS - BVCES 80 WATTS The MJE8503A transistor is designed for , . 1995 Motorola Bipolar Power Transistor Device Data 1 MJE8503A ELECTRICAL CHARACTERISTICS (TC =
Motorola
Original
motorola bipolar transistor bipolar transistor td tr ts tf Motorola Bipolar Power Transistor Data MJE8503A/D

NT 407 F TRANSISTOR TO 220

Abstract: 108 motorola transistor VCE(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT , Power MOSFET Transistor Device Data 1 MGP20N14CL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless , Input Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, Vd Vd f = 1.0 MHz) Transfer , 300 µs, Duty Cycle 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL , Z L R V J G D N GATE COLLECTOR EMITTER COLLECTOR DIM A B C D F G H J
Motorola
Original
108 motorola transistor motorola mosfet 632 transistor motorola 221A-09 motorola ignition transistor motorola transistor ignition MGP20N14CL/D

NT 407 F TRANSISTOR TO 220

Abstract: NT 407 F TRANSISTOR IGBT Vce(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor , Transistor Device Data 1 MGP20N14CL ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted , Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Transfer Capacitance , Width 300 µs, Duty Cycle 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL , ALLOWED. SEATING PLANE C F T S 4 A Q 1 2 3 STYLE 9: PIN 1. 2. 3. 4. U
Motorola
Original
Showing first 20 results.