NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Ting Kok Road, Tai Po, N.T., Hong Kong. 852Â26629298 4 Motorola Bipolar Power Transistor , * Advance Information PNP Silicon Power Transistor *Motorola Preferred Device The MJE9780 MJE9780 is , applications requiring a 150 volt PNP transistor. Features: PNP SILICON POWER TRANSISTOR 3.0 AMPERES 150 , best overall value. REV 7 © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data , , f = 1.0 MHz) fT MHz * Indicates Pulse Test: P.W. = 300 usec max, Duty Cycle = 2%. 2 ... | Original |
4 pages, |
MOTOROLA POWER TRANSISTOR motorola bipolar transistor Motorola Bipolar Power Transistor Data MJE9780 MOTOROLA TRANSISTOR Motorola Power Transistor Data Book NT 407 F power transistor NT 407 F TRANSISTOR MJE9780/D MJE9780/D abstract |
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| Abstract: a Green m D is f u 12 5 d in ue nt co is D uc t Pr , DATA SHEET SILICON TRANSISTOR 2SC3604 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS (in mm) 3.8 MIN. E FEATURES 3.8 MIN. : NF = 1.6 dB TYP. @ f = 2.0 GHz C · High power gain : GA = 12 dB TYP. @ f = 2.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 , +150 °C nt 200 2.1 mW Tstg Storage Temperature 580 Tj Junction ... | Original |
10 pages, |
2SC1223 2SC2148 2SC2149 2SC2367 2SC3587 2SC3603 2SC3604 NEC NE "micro x" NT 407 F power transistor NE AND micro-X 2SC2585 2SC2150 NT 407 F TRANSISTOR datasheet abstract |
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| Abstract: Transistor Device Data 3 MJE8503A MJE8503A PACKAGE DIMENSIONS ÂTÂ B SEATING PLANE C F T S , Ting Kok Road, Tai Po, N.T., Hong Kong. 852Â26629298 4 Motorola Bipolar Power Transistor , * Advance Information SWITCHMODETM Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS - BVCES 80 WATTS The MJE8503A MJE8503A transistor is designed for , , Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 MJE8503A MJE8503A ELECTRICAL CHARACTERISTICS ... | Original |
4 pages, |
Motorola Bipolar Power Transistor Data MJE8503A motorola bipolar transistor NT 407 F power transistor NT 407 F TRANSISTOR MJE8503A/D MJE8503A/D abstract |
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| Abstract: IGBT Vce(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor , MOSFET Transistor Device Data 1 MGP20N14CL MGP20N14CL ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise , Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) Transfer Capacitance , 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL MGP20N14CL PACKAGE DIMENSIONS , PLANE C F T S 4 A Q 1 2 3 STYLE 9: PIN 1. 2. 3. 4. U H K GATE ... | Original |
4 pages, |
MOTOROLA TRANSISTOR TO-220 MGP20N14CL NT 407 F MOSFET TRANSISTOR NT 407 F power transistor NT 407 F TRANSISTOR NT 407 F TRANSISTOR TO 220 MGP20N14CL/D MGP20N14CL/D abstract |
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| Abstract: IGBT Vce(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor , Transistor Device Data 1 MGP20N14CL MGP20N14CL ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted , Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Transfer Capacitance , Width 300 us, Duty Cycle 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL MGP20N14CL , ALLOWED. SEATING PLANE C F T S 4 A Q 1 2 3 STYLE 9: PIN 1. 2. 3. 4. U ... | Original |
4 pages, |
NT 407 F MOSFET TRANSISTOR MGP20N14CL NT 407 F TRANSISTOR NT 407 F power transistor NT 407 F TRANSISTOR TO 220 MGP20N14CL/D MGP20N14CL/D abstract |
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| Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W BFT92W PNP 4 GHz wideband transistor Product , Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W BFT92W FEATURES DESCRIPTION · High power gain Silicon PNP transistor in a plastic, SOT323 (S-mini) package. The BFT92W BFT92W uses , intended as a general purpose transistor for wideband applications up to 2 GHz. PIN 1 base 2 , -10 V 20 50 - Cre feedback capacitance IC = 0; VCB = -10 V; f = 1 MHz - 0.5 ... | Original |
12 pages, |
transistor Bft92 marking code 10 sot23 BFT92W "MARKING CODE W1*" m1b marking BFT92 3358 transistor NT 407 F TRANSISTOR TO 220 BFT92W abstract |
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| Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W BFT92W PNP 4 GHz wideband transistor Product , Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W BFT92W FEATURES DESCRIPTION · High power gain Silicon PNP transistor in a plastic, SOT323 (S-mini) package. The BFT92W BFT92W uses , purpose transistor for wideband applications up to 2 GHz. 3 1 PIN DESCRIPTION 1 , -10 V 20 50 - Cre feedback capacitance IC = 0; VCB = -10 V; f = 1 MHz - 0.5 ... | Original |
12 pages, |
marking code 10 sot23 m1b marking BFT92W NT 407 F TRANSISTOR TO 220 BFT92 NT 407 F TRANSISTOR BFT92W abstract |
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| Abstract: Ting Kok Road, Tai Po, N.T., Hong Kong. 852╜26629298 4 Motorola Bipolar Power Transistor , ╘ Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 REV 7 Figure 1. , SILICON 450 VOLTS 75 WATTS Power Transistor mainly intended for use as ignition circuit output transistor. High Voltage Silicon Power Darlingtons BU522B BU522B SEMICONDUCTOR TECHNICAL DATA Order this document by BU522B/D BU522B/D MOTOROLA 2 Motorola Bipolar Power Transistor Device Data ... | Original |
4 pages, |
motorola 1N4148 BC337 1N4148 BU522B NT 407 F power transistor NT 407 F TRANSISTOR BU522B/D BU522B/D abstract |
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| Abstract: VCE(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT , Power MOSFET Transistor Device Data 1 MGP20N14CL MGP20N14CL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless , Input Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, Vd Vd f = 1.0 MHz) Transfer , 300 us, Duty Cycle 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL MGP20N14CL , L R V J G D N GATE COLLECTOR EMITTER COLLECTOR DIM A B C D F G H J K ... | Original |
4 pages, |
221A-09 motorola transistor ignition MOTOROLA TRANSISTOR 632 transistor motorola motorola ignition transistor MGP20N14CL motorola mosfet NT 407 F TRANSISTOR TO 220 NT 407 F TRANSISTOR 108 motorola transistor MGP20N14CL/D MGP20N14CL/D abstract |
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| Abstract: IGBT VCE(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor , notice. REV 2 © Motorola TMOS Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 , Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Transfer Capacitance , Width 300 us, Duty Cycle 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL MGP20N14CL , Z L R V J G D N GATE COLLECTOR EMITTER COLLECTOR DIM A B C D F G H J ... | Original |
4 pages, |
motorola sps transistor mosfet transistor MGP20N14CL 108 motorola transistor NT 407 F TRANSISTOR TO 220 MGP20N14CL/D MGP20N14CL/D abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| 59 555 Datasheets M29F002B M29F002NT M29F002T 2 MBIT (256KB 256KB 256KB 256KB X8, BOOT BLOCK -110 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS 5 407 Datasheets M22100 M22100 M22100 M22100 2 555 Datasheets M29F040 4 MBIT (512KB 512KB 512KB 512KB X 8, UNIFORM BLOCK) SINGLE SUPPLY FLASH MEMORY 49 555 Datasheets M29F100B M29F100T 1 MBIT (128KB 128KB 128KB 128KB X 8 OR 64KB X 16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY 54 555 Datasheets M29F200B M29F200T 2 www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/83.htm |
STMicroelectronics | 31/03/1999 | 17.42 Kb | HTM | 83.htm |
| ., Components Div., 6/F Philips Ind. Bldg., 24-28 Kung Yip St., KWAI CHUNG, N.T., Tel. (852)424 5121, Fax. (852 SEMICONDUCTORS Philips Semiconductors BFT92W BFT92W BFT92W BFT92W PNP 4 GHz wideband transistor May 1994 2 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W BFT92W BFT92W BFT92W FEATURES • High power gain • Gold metallization transistor for wideband applications up to 2 GHz. DESCRIPTION Silicon PNP transistor in a plastic, SOT323 (S capacitance IC = 0; VCB = âˆ'10 V; f = 1 MHz âˆ' 0.5 âˆ' pF fT transition frequency IC = âˆ'15 mA; VCE = âˆ'10 V; f www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFT92W_1.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| -Clips 102074, Little Fuse, (847) 824-0400 27F1086, Newark 41 NPN Transistor, TO-92 pkg Q1 2N3904 2N3904 2N3904 2N3904 SCREEN (7" x 6") C20 P2 1997 C9A Z1 F1 AC OUTPUT AC INPUT 120/240V 120/240V 120/240V 120/240V A C IN P U T/ O U TP U T C10A P1 T2 D 12 C 26C 24 R 44 D 2 R 9C 25U 5 C 23 C ur re nt Se ns e DC POWER SUPPLY R19 Q2 R21 P3 1 R48 5 9 6 , 886-2-917-7555 20.0XBK, Digikey 14 Metal Film Resistor, 1 MΩ, 1% R2, 36 5043ED1M000F, Philips, (914) 246-2811 (800) 234-7381 (USA only) 50F8317, Newark 15 Metal Film Resistor, 1 kΩ, 1% R3, 35 5043ED1K000 5043ED1K000 5043ED1K000 5043ED1K000 www.datasheetarchive.com/download/9346730-390935ZC/pr3board.zip (pr3board.PDF) |
Microchip | 23/04/1998 | 186.71 Kb | ZIP | pr3board.zip |
| -Clips 102074, Little Fuse, (847) 824-0400 27F1086, Newark 41 NPN Transistor, TO-92 pkg Q1 2N3904 2N3904 2N3904 2N3904 SCREEN (7" x 6") C20 P2 1997 C9A Z1 F1 AC OUTPUT AC INPUT 120/240V 120/240V 120/240V 120/240V A C IN P U T/ O U TP U T C10A P1 T2 D 12 C 26C 24 R 44 D 2 R 9C 25U 5 C 23 C ur re nt Se ns e DC POWER SUPPLY R19 Q2 R21 P3 1 R48 5 9 6 , 886-2-917-7555 20.0XBK, Digikey 14 Metal Film Resistor, 1 MΩ, 1% R2, 36 5043ED1M000F, Philips, (914) 246-2811 (800) 234-7381 (USA only) 50F8317, Newark 15 Metal Film Resistor, 1 kΩ, 1% R3, 35 5043ED1K000 5043ED1K000 5043ED1K000 5043ED1K000 www.datasheetarchive.com/download/47983181-392906ZC/pr3board.zip (pr3board.PDF) |
Microchip | 05/03/1998 | 186.71 Kb | ZIP | pr3board.zip |
| Capacitor (nF ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Equation 7: Spindle Brake Capacitor ( m F Delay Capacitor (nF) Example with Por Delay Time=150milli seconds : . The bits required for VCM .0.1). 2.3 CHARGE-PUMP Two external pins (CP pin 23, CS pin 24) are used. The base of a PNP transistor is connected to Cs pin, the collector of the transistor is connected through a diode to CP pin. A www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6634-v1.htm |
STMicroelectronics | 25/05/2000 | 129.7 Kb | HTM | 6634-v1.htm |
| . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 5/63 AN1138 AN1138 AN1138 AN1138 APPLICATION NOTE INDEX OF TABLES & EQUATION S Equation 1: POR Delay Capacitor (nF ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Equation 7: Spindle Brake Capacitor ( m F : w 1. POR Delay Capacitor (nF) Example with Por Delay Time=150milli seconds : . The bits required .3 CHARGE-PUMP Two external pins (CP pin 23, CS pin 24) are used. The base of a PNP transistor is connected to Cs pin, the collector of the transistor is connected through a diode to CP pin. A storage www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6634.htm |
STMicroelectronics | 20/10/2000 | 134.09 Kb | HTM | 6634.htm |
| Capacitor (nF ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Equation 7: Spindle Brake Capacitor ( m F Capacitor (nF) Example with Por Delay Time=150milli seconds : . The bits required for VCM parking are .0.1). 2.3 CHARGE-PUMP Two external pins (CP pin 23, CS pin 24) are used. A 47nF capacitor and a diode ). Another diode is connected be- tween VCC and the 47nF capacitor. The voltage at the CP pin is called www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6626-v1.htm |
STMicroelectronics | 25/05/2000 | 130.44 Kb | HTM | 6626-v1.htm |
| . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 5/64 AN1139 AN1139 AN1139 AN1139 APPLICATION NOTE INDEX OF TABLES & EQUATION S Equation 1: POR Delay Capacitor (nF ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Equation 7: Spindle Brake Capacitor ( m F Capacitor (nF) Example with Por Delay Time=150milli seconds : . The bits required for VCM parking are not .3 CHARGE-PUMP Two external pins (CP pin 23, CS pin 24) are used. A 47nF capacitor and a diode (in series diode is connected be- tween VCC and the 47nF capacitor. The voltage at the CP pin is called Vboost www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6626.htm |
STMicroelectronics | 20/10/2000 | 134.87 Kb | HTM | 6626.htm |
| HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL213 BUL213 BUL213 BUL213 1021 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL216 BUL216 BUL216 BUL216 1022 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL381 BUL381 BUL381 BUL381 BUL382 BUL382 BUL382 BUL382 1025 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL416 BUL416 BUL416 BUL416 1026 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL510 BUL510 BUL510 BUL510 1027 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL57 BUL57 BUL57 BUL57 1028 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL67 BUL67 BUL67 BUL67 1029 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL810 BUL810 BUL810 BUL810 1033 SUBSCRIBER www.datasheetarchive.com/files/stmicroelectronics/stonline/db/psearch-v1.txt |
STMicroelectronics | 20/10/2000 | 236.22 Kb | TXT | psearch-v1.txt |
| TRANSISTORS BU406D BU406D BU406D BU406D BU407D 6088 GPS RF FRONT-END IC STB5600 STB5600 STB5600 STB5600 2849 HF SSB APPLICATIONS RF & MICROWAVE TRANSISTORS TRANSISTOR BU407FP 6413 N-CHANNEL 300V - 1.8 OHM - 3.2A DPAK POWERMESH MOSFET STD3NB30 STD3NB30 STD3NB30 STD3NB30 2850 HF SSB TRANSISTORS BDX53F BDX54F 1833 AM SIF CIRCUIT STV8225 STV8225 STV8225 STV8225 2562 SERIAL 2K (256 X 8) EEPROM ST24C02 ST24C02 ST24C02 ST24C02 ST24W02 ST24W02 ST24W02 ST24W02 ST25C02 ST25C02 ST25C02 ST25C02 1 5073 HIGH CURRENT NPN SILICON TRANSISTOR BU407 6126 MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE LOW PANEL SCAN DRIVER STV7697A STV7697A STV7697A STV7697A 2841 UHF PULSED APPLICATIONS RF & MICROWAVE TRANSISTORS SD1565 SD1565 SD1565 SD1565 5352 SILICON www.datasheetarchive.com/files/stmicroelectronics/stonline/db/psearch-v3.txt |
STMicroelectronics | 30/03/1999 | 189.32 Kb | TXT | psearch-v3.txt |