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Part Manufacturer Description PDF & SAMPLES
TPS79018DBVRG4 Texas Instruments 1.8V FIXED POSITIVE LDO REGULATOR, PDSO5, GREEN, PLASTIC, SOT-23, 5 PIN
ISL29018IROZ-T7 Intersil Corporation Digital Ambient Light Sensor and Proximity Sensor with Interrupt Function; ODFN8; Temp Range: -40° to 85°C
TPS389018DSER Texas Instruments Low Quiescent Current, 1% Accurate Supervisor With Programmable Delay 6-WSON -40 to 125
TPS79018DBVTG4 Texas Instruments 10-V, 50-mA, Low Noise, Low Iq, Low-Dropout Linear Regulator 5-SOT-23 -40 to 125
TPS79018DBVT Texas Instruments 10-V, 50-mA, Low Noise, Low Iq, Low-Dropout Linear Regulator 5-SOT-23 -40 to 125
TPS79018DBVR Texas Instruments 10-V, 50-mA, Low Noise, Low Iq, Low-Dropout Linear Regulator 5-SOT-23 -40 to 125

NPN Silicon Epitaxial Planar Transistor 9018

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ST 9018 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO , ST 9018 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit Current Gain Group , listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 9018 STATIC Semtech Electronics
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transistor c 9018 ST 9018 Transistor st 9018 9018 transistor equivalent of 9018 transistor S 9018 to-92
Abstract: ST 9018 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO , ST 9018 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit Current Gain Group , listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002 ST 9018 STATIC Semtech Electronics
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9018 transistor NPN 9018 ST9018 transistor 9018 NPN
Abstract: ST 9018 NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter , ) ® Dated : 23/12/2005 ST 9018 STATIC CHARACTERISTIC DC CURRENT GAIN 1000 10 I B =90 A 8 Semtech Electronics
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ic 9018 Br 9018 C 9018 transistor
Abstract: ST 9018 NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter , ) R Dated : 23/12/2005 ST 9018 STATIC CHARACTERISTIC DC CURRENT GAIN 1000 10 9 I Semtech Electronics
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transistor 9018
Abstract: MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications · · Low noise figure: NF = 1.2dB (at f = 1 GHz) High gain: gain = 12.5dB (at f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector , 2.80 2.65 2.53 2.44 2.31 2.24 S21 Ang. (°) 129.33 110.31 102.15 97.08 93.09 90.18 87.75 85.47 83.32 Toshiba
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EG 8010
Abstract: MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications · Low noise figure: NF = 1.2dB (at f = 1 GHz) · Unit: mm High gain: gain = 12.5dB (at f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage , 17.66 600 0.427 -176.63 6.40 90.18 0.089 68.69 0.164 -135.72 16.12 700 Toshiba
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4317 0215 transistor IB 6415
Abstract: TO SHIBA TENTATIVE MT3S04T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS · · Low Noise Figure : NF = 1.2 dB (at f = 1 GHz) High Gain MT3S04T SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 10 5 2 100 10 100 125 -5 5 -1 2 5 Unit in mm 1.2 ±0.05 0.8 ± 0.05 : Gain = 12.5 dB (at f = 1 GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC , ) 129.33 110.31 102.15 97.08 93.09 90.18 87.75 85.47 83.32 81.32 79.52 77.68 76.21 74.27 72.39 70.94 69.29 -
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NF 924 2000MH 100MH IS21I2
Abstract: TO SH IBA TENTATIVE MT3S04AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS MT3S04AT Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.2 dB (at f = 1 GHz) TT irrV » J J l g l l V ^ U l l l fio in U .1 1 1 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base , 97.08 93.09 90.18 87.75 85.47 83.32 81.32 79.52 77.68 76.21 74.27 72.39 70.94 69.29 67.83 66.00 64.34 -
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2493 transistor IC 7109 marking 9721 961001EAA1
Abstract: TOSHIBA MT3S04AT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS â'¢ Low Noise Figure : NF = 1.2 dB (at f = 1 GHz) â'¢ High Gain : Gain = 12.5 dB (at f = 1 GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 3 U. a e U 1 TT 2 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 10 V Collector-Emitter , 90.18 0.089 68.69 0.164 -135.72 16.12 700 0.423 177.97 5.53 87.75 0.101 69.89 0.150 -143.08 14.86 -
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6922 EH toshiba 5564 000707EAA2
Abstract: MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications · Low noise figure: NF = 1.2dB (at f = 1 GHz) · Unit: mm High gain: gain = 12.5dB (at f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter , -176.63 6.40 90.18 0.089 68.69 0.164 -135.72 16.12 700 0.423 177.97 5.53 Toshiba
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Abstract: TO SHIBA TENTATIVE M T3S04T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS â'¢ High Gain 1.2 ± 0.05 0.8 ± 0.05 Low Noise Figure : NF = 1.2 dB (at f = 1 GHz) â'¢ Unit in mm : Gain = 12.5 dB (at f = 1 GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage , 0.422 0.418 -1 7 6 .6 3 177.97 6.40 5.53 90.18 87.75 173.10 168.35 4.88 4.39 -
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Abstract: T O SH IB A TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS MT3SQ4T U nit in mm · · Low Noise Figure High G ain : N F = 1.2 dB (at f = 1 GHz) : G ain = 12.5 dB (at f = 1 GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector Current B ase , 2.80 2.65 2.53 2.44 2.31 2.24 S21 Ang. O 129.33 110.31 102.15 97.08 93.09 90.18 87.75 85.47 83.32 81.32 -
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Abstract: 55GN01FA Ordering number : ENA1113 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA UHF Wide-band Low-noise Amplifier Applications Features · · · · High cut-off frequency : fT= 5.5GHz typ. High gain : S21e2 =11dB typ (f=1GHz). =19dB typ (f=400MHz). Ultrasmall package permitting applied sets to be small and slim. Halogen free compliance , 0.594 164.43 1.944 47.33 0.173 65.72 0.273 -90.18 2200 0.587 161.08 SANYO Electric
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a1113 application of ic 7489 400MH A1113-8/8
Abstract: 55GN01F Ordering number : ENN8149 NPN Epitaxial Planar Silicon Transistor 55GN01F UHF Wide-band Low-noise Amplifier Applications Features · · · High cut-off frequency : fT= 5.5GHz typ. High gain : S21e2 =11dB typ (f=1GHz). =19dB typ (f=400MHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter , -88.36 2000 0.594 164.43 1.944 47.33 0.173 65.72 0.273 -90.18 2200 SANYO Electric
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Abstract: 55GN01F Ordering number : ENN8149 NPN Epitaxial Planar Silicon Transistor 55GN01F UHF Wide-band Low-noise Amplifier Applications Features · · · High cut-off frequency : fT= 5.5GHz typ. High gain : S21e2 =11dB typ (f=1GHz). =19dB typ (f=400MHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter , 1.944 47.33 0.173 65.72 0.273 -90.18 2200 0.587 161.08 1.771 43.20 SANYO Electric
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Abstract: The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend , Philips Semiconductors gg bb5 3*131 0031171 ITS ^BAPX Product specification NPN 9 GHz wideband transistor , Semiconductors â  bb.53^31 0031^72 T7Û HAPX Product specification NPN 9 GHz wideband transistor BFR540 N , 40 HIAPX Product specification NPN 9 GHz wideband transistor N AMER PHILIPS/DISCRETE BFR540 bTE T , › HAPX Product specification NPN 9 GHz wideband transistor BFR540 N AMER PHILIPS/DISCRETE bïE J> 90 -
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NPN transistor SST 117 S 9018 H 331 transistor Transistor MJE 5331 bfr540 equivalent transistor equivalent 0107 NA transistor Bf 966
Abstract: . 2 emitter 3 collector Code: N29 DESCRIPTION The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz , specification NPN 9 GHz wideband transistor ^ ^ FEATURES ^ BFR540 â  N AMER PHILIPS/DISCRETE , Product specification BFR540 NPN 9 GHz wideband transistor - N AMER PHILIPS , 0031^71 ITS Product specification IAPX NPN 9 GHz wideband transistor BFR540 N AUER PHILIPS -
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Abstract: DIODE DATA BOOK Since 1954, when Texas Instruments introduced the first silicon transistor to the , power dissipation of one watt or less.) This volume contains over 800 silicon transistor types , The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The Transistor and Diode Data Book for Design Engineers Texas Instruments INCORPORATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY TRANSISTOR DATA SHEETS TRANSISTOR CHIP CHARACTERIZATION -
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LG color tv Circuit Diagram schematics free transistor equivalent book 2sc RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A 3186J CA90245
Abstract: Wideband Transistors The New Generation Selection guide Table 1 FIRST-GENERATION NPN WIDEBAND , TO-72 CERAMIC PLASTIC SOT37 npn BFQ53 BFR90(A) SOT103 SOT122 SOT173 SOT173/X BFG90A BFP90A BFG91A BFP91A BFQ51 pnp BFQ52 (8) npn BFQ22S BFR91(A) (9) pnp BFQ24 BFQ23 (10) npn BFQ63 BFR96(S) BFG96 BFP96 pnp BFQ32M BFQ32(S) BFG32 BFQ32C npn BFQ34T BFG34 pnp BFQ54T (11) BFQ23C -
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BF547A BFG65 equivalent transistor bf 175 LCD01
Abstract: Ordering number : ENA1113 55GN01FA SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA Features · · UHF Wide-band Low-noise Amplifier Applications · · High cut-off frequency : fT= 5.5GHz typ. High gain : S21e2 =11dB typ (f=1GHz). =19dB typ (f=400MHz). Ultrasmall package permitting applied sets to be small and slim. Halogen free compliance. Specifications , -76.57 -79.88 -83.13 -85.73 -88.36 -90.18 -93.08 -95.85 -98.58 -100.91 -102.73 No. A1113-7/8 SANYO Electric
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IC 8256
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