Top Results
| Part | Manufacturer | Description | Datasheet | BUY |
|---|---|---|---|---|
| TPS79018DBVRG4 | Texas Instruments | 1.8V FIXED POSITIVE LDO REGULATOR, PDSO5, GREEN, PLASTIC, SOT-23, 5 PIN |  |
|
| TIL604 | Texas Instruments | TIL604 N-P-N Planar Silicon Phototransistors | |
|
| TIL603 | Texas Instruments | TIL603 N-P-N Planar Silicon Phototransistors | |
|
| TIL601 | Texas Instruments | TIL601 N-P-N Planar Silicon Phototransistors | |
|
| TIP121 | Texas Instruments | NPN Darlington - Connected Silicon Power Transistors 3-TO-220 | |
|
| TIP117 | Texas Instruments | PnP Darlington - Connected Silicon Power Transistors 3-TO-220 | |
NPN Silicon Epitaxial Planar Transistor 9018
| Catalog Datasheet | MFG & Type | Document Tags | |
|---|---|---|---|
transistor c 9018Abstract: ST 9018 ST 9018 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO , ST 9018 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit Current Gain Group , listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 9018 STATIC |
Semtech Electronics Original |
|
|
ST 9018Abstract: Transistor st 9018 ST 9018 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO , ST 9018 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit Current Gain Group , listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002 ST 9018 STATIC |
Semtech Electronics Original |
|
|
transistor c 9018Abstract: ic 9018 ST 9018 NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter , ) ® Dated : 23/12/2005 ST 9018 STATIC CHARACTERISTIC DC CURRENT GAIN 1000 10 I B =90 A 8 |
Semtech Electronics Original |
|
|
transistor c 9018Abstract: transistor 9018 NPN ST 9018 NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter , ) R Dated : 23/12/2005 ST 9018 STATIC CHARACTERISTIC DC CURRENT GAIN 1000 10 9 I |
Semtech Electronics Original |
|
|
EG 8010Abstract: transistor 9018 NPN MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications · · Low noise figure: NF = 1.2dB (at f = 1 GHz) High gain: gain = 12.5dB (at f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector , 2.80 2.65 2.53 2.44 2.31 2.24 S21 Ang. (°) 129.33 110.31 102.15 97.08 93.09 90.18 87.75 85.47 83.32 |
Toshiba Original |
|
EG 8010 transistor 9018 NPN |
4317 0215 transistorAbstract: MT3S04AT MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications · Low noise figure: NF = 1.2dB (at f = 1 GHz) · Unit: mm High gain: gain = 12.5dB (at f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage , 17.66 600 0.427 -176.63 6.40 90.18 0.089 68.69 0.164 -135.72 16.12 700 |
Toshiba Original |
|
4317 0215 transistor IB 6415 |
MT3S04TAbstract: NF 924 TO SHIBA TENTATIVE MT3S04T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS · · Low Noise Figure : NF = 1.2 dB (at f = 1 GHz) High Gain MT3S04T SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 10 5 2 100 10 100 125 -5 5 -1 2 5 Unit in mm 1.2 ±0.05 0.8 ± 0.05 : Gain = 12.5 dB (at f = 1 GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC , ) 129.33 110.31 102.15 97.08 93.09 90.18 87.75 85.47 83.32 81.32 79.52 77.68 76.21 74.27 72.39 70.94 69.29 |
- OCR Scan |
|
NF 924 2000MH 100MH IS21I2 |
IC 7109Abstract: marking 9721 TO SH IBA TENTATIVE MT3S04AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS MT3S04AT Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.2 dB (at f = 1 GHz) TT irrV » J J l g l l V ^ U l l l fio in U .1 1 1 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base , 97.08 93.09 90.18 87.75 85.47 83.32 81.32 79.52 77.68 76.21 74.27 72.39 70.94 69.29 67.83 66.00 64.34 |
- OCR Scan |
|
IC 7109 marking 9721 2493 transistor 961001EAA1 |
toshiba 5564Abstract: 6922 EH TOSHIBA MT3S04AT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS â'¢ Low Noise Figure : NF = 1.2 dB (at f = 1 GHz) â'¢ High Gain : Gain = 12.5 dB (at f = 1 GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 3 U. a e U 1 TT 2 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 10 V Collector-Emitter , 90.18 0.089 68.69 0.164 -135.72 16.12 700 0.423 177.97 5.53 87.75 0.101 69.89 0.150 -143.08 14.86 |
- OCR Scan |
|
toshiba 5564 6922 EH NPN Silicon Epitaxial Planar Transistor 9018 9018 transistor 000707EAA2 |
NPN Silicon Epitaxial Planar Transistor 9018Abstract: MT3S04AT MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications · Low noise figure: NF = 1.2dB (at f = 1 GHz) · Unit: mm High gain: gain = 12.5dB (at f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter , -176.63 6.40 90.18 0.089 68.69 0.164 -135.72 16.12 700 0.423 177.97 5.53 |
Toshiba Original |
|
|
| Abstract: TO SHIBA TENTATIVE M T3S04T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS â'¢ High Gain 1.2 ± 0.05 0.8 ± 0.05 Low Noise Figure : NF = 1.2 dB (at f = 1 GHz) â'¢ Unit in mm : Gain = 12.5 dB (at f = 1 GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage , 0.422 0.418 -1 7 6 .6 3 177.97 6.40 5.53 90.18 87.75 173.10 168.35 4.88 4.39 |
- OCR Scan |
|
|
MT3S04TAbstract: T O SH IB A TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS MT3SQ4T U nit in mm · · Low Noise Figure High G ain : N F = 1.2 dB (at f = 1 GHz) : G ain = 12.5 dB (at f = 1 GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector Current B ase , 2.80 2.65 2.53 2.44 2.31 2.24 S21 Ang. O 129.33 110.31 102.15 97.08 93.09 90.18 87.75 85.47 83.32 81.32 |
- OCR Scan |
|
|
a1113Abstract: application of ic 7489 55GN01FA Ordering number : ENA1113 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA UHF Wide-band Low-noise Amplifier Applications Features · · · · High cut-off frequency : fT= 5.5GHz typ. High gain : S21e2 =11dB typ (f=1GHz). =19dB typ (f=400MHz). Ultrasmall package permitting applied sets to be small and slim. Halogen free compliance , 0.594 164.43 1.944 47.33 0.173 65.72 0.273 -90.18 2200 0.587 161.08 |
SANYO Electric Original |
|
a1113 application of ic 7489 400MH A1113-8/8 |
55GN01FAbstract: 55GN01F Ordering number : ENN8149 NPN Epitaxial Planar Silicon Transistor 55GN01F UHF Wide-band Low-noise Amplifier Applications Features · · · High cut-off frequency : fT= 5.5GHz typ. High gain : S21e2 =11dB typ (f=1GHz). =19dB typ (f=400MHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter , -88.36 2000 0.594 164.43 1.944 47.33 0.173 65.72 0.273 -90.18 2200 |
SANYO Electric Original |
|
|
55GN01FAbstract: 55GN01F Ordering number : ENN8149 NPN Epitaxial Planar Silicon Transistor 55GN01F UHF Wide-band Low-noise Amplifier Applications Features · · · High cut-off frequency : fT= 5.5GHz typ. High gain : S21e2 =11dB typ (f=1GHz). =19dB typ (f=400MHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter , 1.944 47.33 0.173 65.72 0.273 -90.18 2200 0.587 161.08 1.771 43.20 |
SANYO Electric Original |
|
|
NPN transistor SST 117Abstract: transistor npn Epitaxial Silicon SST 117 The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend , Philips Semiconductors gg bb5 3*131 0031171 ITS ^BAPX Product specification NPN 9 GHz wideband transistor , Semiconductors â bb.53^31 0031^72 T7à HAPX Product specification NPN 9 GHz wideband transistor BFR540 N , 40 HIAPX Product specification NPN 9 GHz wideband transistor N AMER PHILIPS/DISCRETE BFR540 bTE T , HAPX Product specification NPN 9 GHz wideband transistor BFR540 N AMER PHILIPS/DISCRETE bïE J> 90 |
- OCR Scan |
|
NPN transistor SST 117 transistor npn Epitaxial Silicon SST 117 S 9018 H 331 transistor Transistor MJE 5331 bfr540 equivalent URA698 |
| Abstract: . 2 emitter 3 collector Code: N29 DESCRIPTION The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz , specification NPN 9 GHz wideband transistor ^ ^ FEATURES ^ BFR540 â N AMER PHILIPS/DISCRETE , Product specification BFR540 NPN 9 GHz wideband transistor - N AMER PHILIPS , 0031^71 ITS Product specification IAPX NPN 9 GHz wideband transistor BFR540 N AUER PHILIPS |
- OCR Scan |
|
|
LG color tv Circuit Diagram schematicsAbstract: free transistor equivalent book 2sc DIODE DATA BOOK Since 1954, when Texas Instruments introduced the first silicon transistor to the , power dissipation of one watt or less.) This volume contains over 800 silicon transistor types , The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The Transistor and Diode Data Book for Design Engineers Texas Instruments INCORPORATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY TRANSISTOR DATA SHEETS TRANSISTOR CHIP CHARACTERIZATION |
- OCR Scan |
|
LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 3186J CA90245 |
BF547BAbstract: BFG65 equivalent Wideband Transistors The New Generation Selection guide Table 1 FIRST-GENERATION NPN WIDEBAND , TO-72 CERAMIC PLASTIC SOT37 npn BFQ53 BFR90(A) SOT103 SOT122 SOT173 SOT173/X BFG90A BFP90A BFG91A BFP91A BFQ51 pnp BFQ52 (8) npn BFQ22S BFR91(A) (9) pnp BFQ24 BFQ23 (10) npn BFQ63 BFR96(S) BFG96 BFP96 pnp BFQ32M BFQ32(S) BFG32 BFQ32C npn BFQ34T BFG34 pnp BFQ54T (11) BFQ23C |
- OCR Scan |
|
BF547B BFG65 equivalent BF547A transistor bf 175 LCD01 |
IC 8256Abstract: A1113 Ordering number : ENA1113 55GN01FA SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA Features · · UHF Wide-band Low-noise Amplifier Applications · · High cut-off frequency : fT= 5.5GHz typ. High gain : S21e2 =11dB typ (f=1GHz). =19dB typ (f=400MHz). Ultrasmall package permitting applied sets to be small and slim. Halogen free compliance. Specifications , -76.57 -79.88 -83.13 -85.73 -88.36 -90.18 -93.08 -95.85 -98.58 -100.91 -102.73 No. A1113-7/8 |
SANYO Electric Original |
|
IC 8256 |
Showing first 20 results. Show More |