500 MILLION PARTS FROM 12000 MANUFACTURERS
500 MILLION PARTS FROM 12000 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| TIP121 | Texas Instruments | NPN Darlington - Connected Silicon Power Transistors 3-TO-220 | 
|
|
|
| SN75468NSRE4 | Texas Instruments | 500mA, 100V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, GREEN, PLASTIC, SOP-16 |
|
|
|
| SN75424N | Texas Instruments | 0.5A, 100V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR, PLASTIC, DIP-18 |
|
|
| Part | Manufacturer | Description | Last Check | Distributor | Ordering |
| NPN-DP2S-325-INLINE | Solartron Metrology | DP/2/S, 325 Tip, In Line Connector 600mm from probe, 3meters after | 1 from $519.00 (Oct 2016) | Component Distributors | |
| NPN02SXLN-RC | Sullins Connector Solutions | CONN JUMPER SHORTING 2MM GOLD | 27,252 from £0.19 (Aug 2016) | Digi-Key | |
| NPN02SXLN-RC | Sullins Connector Solutions | 2 Position 2 mm Pitch Single Open Top Mini Shunt | from $0.0435 (Sep 2016) | Future Electronics | |
| NPN02SXNN-RC | Sullins Connector Solutions | CONN JUMPER SHORTING 2MM GOLD | 1,314 from $0.0435 (Oct 2016) | Digi-Key | |
| NPNPDC0V1 | OMRON | NP DESIGNER PROGRAMMING SOFTWR | from $109.21 (Sep 2016) | Digi-Key | |
| Catalog Datasheet | MFG & Type | Document Tags |
| Abstract: ST 9018 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO , ST 9018 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit Current Gain Group , listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 9018 STATIC ... | Semtech Electronics Original |
3 pages, |
9018 D Transistor S 9018 to-92 9018 equivalent of 9018 transistor Transistor st 9018 9018 transistor transistor c 9018 ST 9018 TEXT |
|
|||
| Abstract: ST 9018 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO , ST 9018 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit Current Gain Group , listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002 ST 9018 STATIC ... | Semtech Electronics Original |
3 pages, |
transistor 9018 NPN equivalent of 9018 transistor 9018 9018 transistor NPN S 9018 to-92 9018 transistor transistor c 9018 Transistor st 9018 ST 9018 TEXT |
|
|||
| Abstract: ST 9018 NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter , ) ® Dated : 23/12/2005 ST 9018 STATIC CHARACTERISTIC DC CURRENT GAIN 1000 10 I B =90 A 8 ... | Semtech Electronics Original |
2 pages, |
transistor 9018 NPN C 9018 transistor Br 9018 9018 transistor NPN 9018 transistor 9018 ic 9018 transistor c 9018 TEXT |
|
|||
| Abstract: ST 9018 NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter , ) R Dated : 23/12/2005 ST 9018 STATIC CHARACTERISTIC DC CURRENT GAIN 1000 10 9 I ... | Semtech Electronics Original |
2 pages, |
transistor 9018 9018 transistor NPN 9018 transistor transistor 9018 NPN transistor c 9018 TEXT |
|
|||
| Abstract: MT3S04AT MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT MT3S04AT VHF~UHF Band Low Noise Amplifier Applications · · Low noise figure: NF = 1.2dB (at f = 1 GHz) High gain: gain = 12.5dB (at f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector , 2.80 2.65 2.53 2.44 2.31 2.24 S21 Ang. (°) 129.33 110.31 102.15 97.08 93.09 90.18 87.75 85.47 83.32 ... | Toshiba Original |
6 pages, |
transistor 9018 NPN EG 8010 MT3S04AT TEXT |
|
|||
| Abstract: MT3S04AT MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT MT3S04AT VHF~UHF Band Low Noise Amplifier Applications · Low noise figure: NF = 1.2dB (at f = 1 GHz) · Unit: mm High gain: gain = 12.5dB (at f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage , 17.66 600 0.427 -176.63 6.40 90.18 0.089 68.69 0.164 -135.72 16.12 700 ... | Toshiba Original |
6 pages, |
IB 6415 MT3S04AT 4317 0215 transistor TEXT |
|
|||
| Abstract: TO SHIBA TENTATIVE MT3S04T MT3S04T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS · · Low Noise Figure : NF = 1.2 dB (at f = 1 GHz) High Gain MT3S04T MT3S04T SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 10 5 2 100 10 100 125 -5 5 -1 2 5 Unit in mm 1.2 ±0.05 0.8 ± 0.05 : Gain = 12.5 dB (at f = 1 GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC , ) 129.33 110.31 102.15 97.08 93.09 90.18 87.75 85.47 83.32 81.32 79.52 77.68 76.21 74.27 72.39 70.94 69.29 ... | OCR Scan |
4 pages, |
NF 924 MT3S04T TEXT |
|
|||
| Abstract: TO SH IBA TENTATIVE MT3S04AT MT3S04AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS MT3S04AT MT3S04AT Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.2 dB (at f = 1 GHz) TT irrV » J J l g l l V ^ U l l l fio in U .1 1 1 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base , 97.08 93.09 90.18 87.75 85.47 83.32 81.32 79.52 77.68 76.21 74.27 72.39 70.94 69.29 67.83 66.00 64.34 ... | OCR Scan |
4 pages, |
2493 transistor MT3S04AT TEXT |
|
|||
| Abstract: TOSHIBA MT3S04AT MT3S04AT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT MT3S04AT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS ⢠Low Noise Figure : NF = 1.2 dB (at f = 1 GHz) ⢠High Gain : Gain = 12.5 dB (at f = 1 GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 3 U. a e U 1 TT 2 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 10 V Collector-Emitter , 90.18 0.089 68.69 0.164 -135.72 16.12 700 0.423 177.97 5.53 87.75 0.101 69.89 0.150 -143.08 14.86 ... | OCR Scan |
4 pages, |
MT3S04AT 9018 transistor 4317 0215 transistor toshiba 5564 6922 EH TEXT |
|
|||
| Abstract: MT3S04AT MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT MT3S04AT VHF~UHF Band Low Noise Amplifier Applications · Low noise figure: NF = 1.2dB (at f = 1 GHz) · Unit: mm High gain: gain = 12.5dB (at f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter , -176.63 6.40 90.18 0.089 68.69 0.164 -135.72 16.12 700 0.423 177.97 5.53 ... | Toshiba Original |
6 pages, |
MT3S04AT TEXT |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
|
Lighting Title Date an buJ100.pdf: Philips BUJ100 BUJ100 transistor in TO-92 suits all Philips BUJ100 BUJ100 transistor diode / transistor mod Title Date AN10117 AN10117 1.pdf: Medium Power Transistors and Rectifiers for Power demodulator 2003-03-14 AN96144 AN96144 1.pdf: 22 1 0 /catalog/appnotes/19809.html Applicationnotes for NPN Title Date
/datasheets/files/philips/search/docindex-v1.txt |
Philips | 16/06/2005 | 2589.32 Kb | TXT | docindex-v1.txt |
|
No abstract text available
/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip () |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |