NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| TIP121 | Texas Instruments | NPN Darlington - Connected Silicon Power Transistors 3-TO-220 | 
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| TIP117 | Texas Instruments | PnP Darlington - Connected Silicon Power Transistors 3-TO-220 |
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| TIP115 | Texas Instruments | PnP Darlington - Connected Silicon Power Transistors 3-TO-220 |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: ST 9018 NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter , ) ® Dated : 23/12/2005 ST 9018 STATIC CHARACTERISTIC DC CURRENT GAIN 1000 10 I B =90 A 8 ... | Original |
2 pages, |
transistor 9018 NPN C 9018 transistor 9018 transistor NPN 9018 ic 9018 transistor c 9018 datasheet abstract |
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| Abstract: ST 9018 NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter , ) R Dated : 23/12/2005 ST 9018 STATIC CHARACTERISTIC DC CURRENT GAIN 1000 10 9 I ... | Original |
2 pages, |
transistor 9018 9018 transistor NPN 9018 transistor transistor 9018 NPN transistor c 9018 datasheet abstract |
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| Abstract: ST 9018 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 , ST 9018 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit Current Gain Group , listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002 ST 9018 STATIC ... | Original |
3 pages, |
9018 9018 transistor 9018 transistor NPN equivalent of 9018 transistor S 9018 to-92 transistor 9018 NPN transistor c 9018 Transistor st 9018 ST 9018 datasheet abstract |
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| Abstract: ST 9018 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 , ST 9018 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit Current Gain Group , listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 9018 STATIC ... | Original |
3 pages, |
9018 Transistor st 9018 equivalent of 9018 transistor 9018 transistor transistor c 9018 ST 9018 datasheet abstract |
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| Abstract: TOSHIBA MT3S04AT MT3S04AT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT MT3S04AT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.2 dB (at f = 1 GHz) • High Gain : Gain = 12.5 dB (at f = 1 GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 3 U. a e U 1 TT 2 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 10 V Collector-Emitter Voltage , 19.47 500 0.427 -169.45 7.64 93.09 0.076 67.06 0.183 -126.70 17.66 600 0.427 -176.63 6.40 90.18 ... | OCR Scan |
4 pages, |
MT3S04AT 4317 0215 transistor 6922 EH toshiba 5564 MT3S04AT abstract |
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| Abstract: MT3S04AT MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT MT3S04AT VHF~UHF Band Low Noise Amplifier Applications · · Low noise figure: NF = 1.2dB (at f = 1 GHz) High gain: gain = 12.5dB (at f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector , 2.80 2.65 2.53 2.44 2.31 2.24 S21 Ang. (°) 129.33 110.31 102.15 97.08 93.09 90.18 87.75 85.47 83.32 ... | Original |
6 pages, |
transistor 9018 NPN EG 8010 MT3S04AT MT3S04AT abstract |
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| Abstract: T O SH IB A TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04T MT3S04T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS MT3SQ4T U nit in mm · · Low Noise Figure High G ain : N F = 1.2 dB (at f = 1 GHz) : G ain = 12.5 dB (at f = 1 GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector , 90.18 87.75 85.47 83.32 81.32 79.52 77.68 76.21 74.27 72.39 70.94 69.29 67.83 66.00 64.34 Mag. 0.029 ... | OCR Scan |
4 pages, |
MT3S04T MT3S04T abstract |
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| Abstract: TO SH IBA TENTATIVE MT3S04AT MT3S04AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS MT3S04AT MT3S04AT Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.2 dB (at f = 1 GHz) TT irrV » J J l g l l V ^ U l l l fio in U .1 1 1 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base , 97.08 93.09 90.18 87.75 85.47 83.32 81.32 79.52 77.68 76.21 74.27 72.39 70.94 69.29 67.83 66.00 64.34 ... | OCR Scan |
4 pages, |
MT3S04AT MT3S04AT abstract |
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| Abstract: TO SHIBA TENTATIVE MT3S04T MT3S04T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS · · Low Noise Figure : NF = 1.2 dB (at f = 1 GHz) High Gain MT3S04T MT3S04T SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 10 5 2 100 10 100 125 -5 5 -1 2 5 Unit in mm 1.2 ±0.05 0.8 ± 0.05 : Gain = 12.5 dB (at f = 1 GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC , Ang. (°) 129.33 110.31 102.15 97.08 93.09 90.18 87.75 85.47 83.32 81.32 79.52 77.68 76.21 74.27 72.39 ... | OCR Scan |
4 pages, |
MT3S04T MT3S04T abstract |
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| Abstract: MT3S04AT MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT MT3S04AT VHF~UHF Band Low Noise Amplifier Applications · Low noise figure: NF = 1.2dB (at f = 1 GHz) · Unit: mm High gain: gain = 12.5dB (at f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage , 17.66 600 0.427 -176.63 6.40 90.18 0.089 68.69 0.164 -135.72 16.12 700 ... | Original |
6 pages, |
IB 6415 MT3S04AT 4317 0215 transistor MT3S04AT abstract |
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| : Philips BUJ100 BUJ100 BUJ100 BUJ100 transistor in TO-92 suits all Philips BUJ100 BUJ100 BUJ100 BUJ100 transistor in TO-92 suits all Compact Low Vf MEGA Schottky diode / transistor mod Title Date AN10117 AN10117 AN10117 AN10117 1.pdf: Medium Power Transistors and /19809.html Applicationnotes for NPN Title Date AN10117 AN10117 AN10117 AN10117 1.pdf: Medium Power Transistors and Rectifiers for www.datasheetarchive.com/files/philips/search/docindex-v1.txt |
Philips | 16/06/2005 | 2589.32 Kb | TXT | docindex-v1.txt |