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TPS79018DBVRG4 Texas Instruments 1.8V FIXED POSITIVE LDO REGULATOR, PDSO5, GREEN, PLASTIC, SOT-23, 5 PIN visit Texas Instruments
TIL601 Texas Instruments TIL601 N-P-N Planar Silicon Phototransistors visit Texas Instruments
TIL603 Texas Instruments TIL603 N-P-N Planar Silicon Phototransistors visit Texas Instruments
TIL604 Texas Instruments TIL604 N-P-N Planar Silicon Phototransistors visit Texas Instruments
TIP121 Texas Instruments NPN Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments
TIP117 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments

NPN Silicon Epitaxial Planar Transistor 9018

Catalog Datasheet MFG & Type PDF Document Tags

transistor c 9018

Abstract: ST 9018 ST 9018 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO , ST 9018 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit Current Gain Group , listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 9018 STATIC
Semtech Electronics
Original

ST 9018

Abstract: Transistor st 9018 ST 9018 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO , ST 9018 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit Current Gain Group , listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002 ST 9018 STATIC
Semtech Electronics
Original

transistor c 9018

Abstract: ic 9018 ST 9018 NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter , ) ® Dated : 23/12/2005 ST 9018 STATIC CHARACTERISTIC DC CURRENT GAIN 1000 10 I B =90 A 8
Semtech Electronics
Original

transistor c 9018

Abstract: transistor 9018 NPN ST 9018 NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter , ) R Dated : 23/12/2005 ST 9018 STATIC CHARACTERISTIC DC CURRENT GAIN 1000 10 9 I
Semtech Electronics
Original

EG 8010

Abstract: transistor 9018 NPN MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications · · Low noise figure: NF = 1.2dB (at f = 1 GHz) High gain: gain = 12.5dB (at f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector , 2.80 2.65 2.53 2.44 2.31 2.24 S21 Ang. (°) 129.33 110.31 102.15 97.08 93.09 90.18 87.75 85.47 83.32
Toshiba
Original
EG 8010 transistor 9018 NPN

4317 0215 transistor

Abstract: MT3S04AT MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications · Low noise figure: NF = 1.2dB (at f = 1 GHz) · Unit: mm High gain: gain = 12.5dB (at f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage , 17.66 600 0.427 -176.63 6.40 90.18 0.089 68.69 0.164 -135.72 16.12 700
Toshiba
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4317 0215 transistor IB 6415

MT3S04T

Abstract: NF 924 TO SHIBA TENTATIVE MT3S04T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS · · Low Noise Figure : NF = 1.2 dB (at f = 1 GHz) High Gain MT3S04T SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 10 5 2 100 10 100 125 -5 5 -1 2 5 Unit in mm 1.2 ±0.05 0.8 ± 0.05 : Gain = 12.5 dB (at f = 1 GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC , ) 129.33 110.31 102.15 97.08 93.09 90.18 87.75 85.47 83.32 81.32 79.52 77.68 76.21 74.27 72.39 70.94 69.29
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NF 924 2000MH 100MH IS21I2

IC 7109

Abstract: marking 9721 TO SH IBA TENTATIVE MT3S04AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS MT3S04AT Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.2 dB (at f = 1 GHz) TT irrV » J J l g l l V ^ U l l l fio in U .1 1 1 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base , 97.08 93.09 90.18 87.75 85.47 83.32 81.32 79.52 77.68 76.21 74.27 72.39 70.94 69.29 67.83 66.00 64.34
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IC 7109 marking 9721 2493 transistor 961001EAA1

NPN Silicon Epitaxial Planar Transistor 9018

Abstract: MT3S04AT MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications · Low noise figure: NF = 1.2dB (at f = 1 GHz) · Unit: mm High gain: gain = 12.5dB (at f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter , -176.63 6.40 90.18 0.089 68.69 0.164 -135.72 16.12 700 0.423 177.97 5.53
Toshiba
Original
NPN Silicon Epitaxial Planar Transistor 9018

toshiba 5564

Abstract: 6922 EH TOSHIBA MT3S04AT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS â'¢ Low Noise Figure : NF = 1.2 dB (at f = 1 GHz) â'¢ High Gain : Gain = 12.5 dB (at f = 1 GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 3 U. a e U 1 TT 2 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 10 V Collector-Emitter , 90.18 0.089 68.69 0.164 -135.72 16.12 700 0.423 177.97 5.53 87.75 0.101 69.89 0.150 -143.08 14.86
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toshiba 5564 6922 EH 9018 transistor 000707EAA2
Abstract: TO SHIBA TENTATIVE M T3S04T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS â'¢ High Gain 1.2 ± 0.05 0.8 ± 0.05 Low Noise Figure : NF = 1.2 dB (at f = 1 GHz) â'¢ Unit in mm : Gain = 12.5 dB (at f = 1 GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage , 0.422 0.418 -1 7 6 .6 3 177.97 6.40 5.53 90.18 87.75 173.10 168.35 4.88 4.39 -
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MT3S04T

Abstract: T O SH IB A TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS MT3SQ4T U nit in mm · · Low Noise Figure High G ain : N F = 1.2 dB (at f = 1 GHz) : G ain = 12.5 dB (at f = 1 GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector Current B ase , 2.80 2.65 2.53 2.44 2.31 2.24 S21 Ang. O 129.33 110.31 102.15 97.08 93.09 90.18 87.75 85.47 83.32 81.32
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55GN01F

Abstract: 55GN01F Ordering number : ENN8149 NPN Epitaxial Planar Silicon Transistor 55GN01F UHF Wide-band Low-noise Amplifier Applications Features · · · High cut-off frequency : fT= 5.5GHz typ. High gain : S21e2 =11dB typ (f=1GHz). =19dB typ (f=400MHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter , -88.36 2000 0.594 164.43 1.944 47.33 0.173 65.72 0.273 -90.18 2200
SANYO Electric
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400MH

a1113

Abstract: application of ic 7489 55GN01FA Ordering number : ENA1113 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA UHF Wide-band Low-noise Amplifier Applications Features · · · · High cut-off frequency : fT= 5.5GHz typ. High gain : S21e2 =11dB typ (f=1GHz). =19dB typ (f=400MHz). Ultrasmall package permitting applied sets to be small and slim. Halogen free compliance , 0.594 164.43 1.944 47.33 0.173 65.72 0.273 -90.18 2200 0.587 161.08
SANYO Electric
Original
a1113 application of ic 7489 A1113-8/8

55GN01F

Abstract: 55GN01F Ordering number : ENN8149 NPN Epitaxial Planar Silicon Transistor 55GN01F UHF Wide-band Low-noise Amplifier Applications Features · · · High cut-off frequency : fT= 5.5GHz typ. High gain : S21e2 =11dB typ (f=1GHz). =19dB typ (f=400MHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter , 1.944 47.33 0.173 65.72 0.273 -90.18 2200 0.587 161.08 1.771 43.20
SANYO Electric
Original

NPN transistor SST 117

Abstract: transistor npn Epitaxial Silicon SST 117 The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend , Philips Semiconductors gg bb5 3*131 0031171 ITS ^BAPX Product specification NPN 9 GHz wideband transistor , Semiconductors â  bb.53^31 0031^72 T7Û HAPX Product specification NPN 9 GHz wideband transistor BFR540 N , 40 HIAPX Product specification NPN 9 GHz wideband transistor N AMER PHILIPS/DISCRETE BFR540 bTE T , › HAPX Product specification NPN 9 GHz wideband transistor BFR540 N AMER PHILIPS/DISCRETE bïE J> 90Â
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NPN transistor SST 117 transistor npn Epitaxial Silicon SST 117 S 9018 H 331 transistor Transistor MJE 5331 bfr540 equivalent URA698
Abstract: . 2 emitter 3 collector Code: N29 DESCRIPTION The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz , specification NPN 9 GHz wideband transistor ^ ^ FEATURES ^ BFR540 â  N AMER PHILIPS/DISCRETE , Product specification BFR540 NPN 9 GHz wideband transistor - N AMER PHILIPS , 0031^71 ITS Product specification IAPX NPN 9 GHz wideband transistor BFR540 N AUER PHILIPS -
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LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc DIODE DATA BOOK Since 1954, when Texas Instruments introduced the first silicon transistor to the , power dissipation of one watt or less.) This volume contains over 800 silicon transistor types , The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The Transistor and Diode Data Book for Design Engineers Texas Instruments INCORPORATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY TRANSISTOR DATA SHEETS TRANSISTOR CHIP CHARACTERIZATION
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LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 3186J CA90245

BF547A

Abstract: BF547B Wideband Transistors The New Generation Selection guide Table 1 FIRST-GENERATION NPN WIDEBAND , TO-72 CERAMIC PLASTIC SOT37 npn BFQ53 BFR90(A) SOT103 SOT122 SOT173 SOT173/X BFG90A BFP90A BFG91A BFP91A BFQ51 pnp BFQ52 (8) npn BFQ22S BFR91(A) (9) pnp BFQ24 BFQ23 (10) npn BFQ63 BFR96(S) BFG96 BFP96 pnp BFQ32M BFQ32(S) BFG32 BFQ32C npn BFQ34T BFG34 pnp BFQ54T (11) BFQ23C
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BF547A BF547B BFG65 equivalent transistor bf 175 LCD01

IC 8256

Abstract: A1113 Ordering number : ENA1113 55GN01FA SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA Features · · UHF Wide-band Low-noise Amplifier Applications · · High cut-off frequency : fT= 5.5GHz typ. High gain : S21e2 =11dB typ (f=1GHz). =19dB typ (f=400MHz). Ultrasmall package permitting applied sets to be small and slim. Halogen free compliance. Specifications , -76.57 -79.88 -83.13 -85.73 -88.36 -90.18 -93.08 -95.85 -98.58 -100.91 -102.73 No. A1113-7/8
SANYO Electric
Original
IC 8256
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