NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: ST 9018 NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter , ) R Dated : 23/12/2005 ST 9018 STATIC CHARACTERISTIC DC CURRENT GAIN 1000 10 9 I ... | Original |
2 pages, |
transistor 9018 NPN 9018 transistor NPN 9018 transistor transistor c 9018 datasheet abstract |
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| Abstract: ST 9018 NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter , ) ® Dated : 23/12/2005 ST 9018 STATIC CHARACTERISTIC DC CURRENT GAIN 1000 10 I B =90 A 8 ... | Original |
2 pages, |
9018 transistor NPN 9018 transistor c 9018 datasheet abstract |
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| Abstract: ST 9018 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 , ST 9018 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit Current Gain Group , listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 9018 STATIC ... | Original |
3 pages, |
9018 Transistor st 9018 transistor c 9018 9018 transistor equivalent of 9018 transistor ST 9018 datasheet abstract |
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| Abstract: ST 9018 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 , ST 9018 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit Current Gain Group , listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002 ST 9018 STATIC ... | Original |
3 pages, |
transistor c 9018 equivalent of 9018 transistor 9018 datasheet abstract |
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| Abstract: MT3S04AT MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT MT3S04AT VHF~UHF Band Low Noise Amplifier Applications · Low noise figure: NF = 1.2dB (at f = 1 GHz) · Unit: mm High gain: gain = 12.5dB (at f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage , 17.66 600 0.427 -176.63 6.40 90.18 0.089 68.69 0.164 -135.72 16.12 700 ... | Original |
6 pages, |
MT3S04AT IB 6415 MT3S04AT abstract |
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| Abstract: TOSHIBA MT3S04AT MT3S04AT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT MT3S04AT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.2 dB (at f = 1 GHz) • High Gain : Gain = 12.5 dB (at f = 1 GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 3 U. a e U 1 TT 2 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 10 V Collector-Emitter Voltage , 19.47 500 0.427 -169.45 7.64 93.09 0.076 67.06 0.183 -126.70 17.66 600 0.427 -176.63 6.40 90.18 ... | OCR Scan |
4 pages, |
toshiba 5564 MT3S04AT MT3S04AT abstract |
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| Abstract: MT3S04AT MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT MT3S04AT VHF~UHF Band Low Noise Amplifier Applications · Low noise figure: NF = 1.2dB (at f = 1 GHz) · Unit: mm High gain: gain = 12.5dB (at f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter , -176.63 6.40 90.18 0.089 68.69 0.164 -135.72 16.12 700 0.423 177.97 5.53 ... | Original |
6 pages, |
MT3S04AT MT3S04AT abstract |
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| Abstract: is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in , Semiconductors â- b b 5 3 T 31 DD3117D DD3117D 2 b ^ Bi APX Product specification NPN 9 GHz wideband transistor BFR540 BFR540 - , bb5 3*131 0031171 ITS ^BAPX Product specification NPN 9 GHz wideband transistor BFR540 BFR540 - N AMER , specification NPN 9 GHz wideband transistor BFR540 BFR540 N AMER PHILIPS/DISCRETE blE D tot (mW) 200 \ SO 100 , NPN 9 GHz wideband transistor BFR540 BFR540 -- N AMER PHILIPS/DISCRETE b^E D In Figs 6 to 9, GUM = maximum ... | OCR Scan |
22 pages, |
URA698 transistor bf 760 BFR540 BFR505 NPN transistor SST 117 BFR540 abstract |
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| Abstract: 55GN01F 55GN01F Ordering number : ENN8149 ENN8149 NPN Epitaxial Planar Silicon Transistor 55GN01F 55GN01F UHF Wide-band Low-noise Amplifier Applications Features · · · High cut-off frequency : fT= 5.5GHz typ. High gain : S21e2 =11dB typ (f=1GHz). =19dB typ (f=400MHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter , 65.72 0.273 -90.18 2200 0.587 161.08 1.771 43.20 0.189 64.76 0.291 ... | Original |
8 pages, |
55GN01F ENN8149 ENN8149 abstract |
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| Abstract: 55GN01F 55GN01F Ordering number : ENN8149 ENN8149 NPN Epitaxial Planar Silicon Transistor 55GN01F 55GN01F UHF Wide-band Low-noise Amplifier Applications Features · · · High cut-off frequency : fT= 5.5GHz typ. High gain : S21e2 =11dB typ (f=1GHz). =19dB typ (f=400MHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter , 1.944 47.33 0.173 65.72 0.273 -90.18 2200 0.587 161.08 1.771 43.20 ... | Original |
8 pages, |
55GN01F ENN8149 ENN8149 abstract |
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| /appnotes/19809.html Applicationnotes for NPN Title Date AN10117 AN10117 AN10117 AN10117 1.pdf: Medium Power Transistors and Rectifiers -04-07 209 1 0 /catalog/appnotes/30919.html Applicationnotes for Transistor wideband NPN up to 3.5 GHz Title Applicationnotes for Transistor wideband NPN up to 6 GHz Title Date AN97039 AN97039 AN97039 AN97039 1.pdf: Video amplifier board with TDA /appnotes/30924.html Applicationnotes for Transistor wideband NPN up to 10 GHz Title Date 1890MHZ 1890MHZ 1890MHZ 1890MHZ.pdf: 1890MHz low 1 0 /catalog/appnotes/30925.html Applicationnotes for Transistor wideband NPN up to 25 GHz Title www.datasheetarchive.com/files/philips/search/docindex-v1.txt |
Philips | 16/06/2005 | 2589.32 Kb | TXT | docindex-v1.txt |