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Part Manufacturer Description Datasheet BUY
HA2-5002/883 Intersil Corporation BUFFER AMPLIFIER, MBCY8, METAL CAN-8 visit Intersil
HA2-5002-2 Intersil Corporation BUFFER AMPLIFIER, MBCY8 visit Intersil
HA2-5002-5 Intersil Corporation BUFFER AMPLIFIER, MBCY8 visit Intersil
HA2-5002-2ZR5254 Intersil Corporation BUFFER AMPLIFIER, MBCY8, GREEN, METAL CAN, 8 PIN visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

NPN/transistor NEC K 2500

Catalog Datasheet MFG & Type PDF Document Tags

NEC K 2500

Abstract: N transistor NEC K 2500 DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector , f (MHz) 500 1000 1500 2000 2500 3000 3500 4000 3 NEC S PARAMETER 2SC3604 Sue, S22e , - Collector to Base Voltage -V 2 NEC 2SC3604 INSERTION GAIN vs. C O 0.5 1 5
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NEC K 2500 N transistor NEC K 2500 2SC1223 transistor marking S00 2SC2367 NEC PART NUMBER MARKING

2SC2150

Abstract: 2SC1223 DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector , ) Date Published August 1996 P Printed in Japan © NEC Corporation 1996 NEC 2SC3604 , - Collector Current - mA V cb - Collector to Base Voltage -V 2 NEC 2SC3604 INSERTION
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2SC2150 micro X TRANSISTOR 2sC 5250 2SC3603

nec PA81c

Abstract: uPA81C Compound Transistor u PA81C PNP, NPN LED uPA81C NPN 7 mm IC 16 15 14 13 12 11 10 , 2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com , mA, IO = 400 mA 1.2 2.2 V 1.5 mA II 1000 2500 VI = 17 V, IO = 0 1 16 2 15 3 14 4 13 5 12 6 11 7 10 R1 = 20 k RB1 = 20 k RB2 = 2 k R1 RB1 8 RB2 G16464JJ2V0DS00 2 IC-5917 October 2002 NS CP(K) 1982
NEC
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nec PA81c uPA81C FE2500 G16464JJ2V0DS

nec PA81c

Abstract: uPA81C Compound Transistor u PA81C PNP, NPN LED uPA81C NPN 7 mm IC 16 15 14 , 1.2 2.2 V 1.5 mA 1000 hFE 2500 VI = 17 V, IO = 0 II 1 16 2 15 3 14 4 13 5 12 6 11 7 10 R1 = 20 k RB1 = 20 k RB2 = 2 k R1 RB1 8 RB2 G16464JJ2V0DS00 2 IC-5917 October 2002 NS CP(K) 1982 uPA81C , )226-1702 (054)254-4794 (076)232-7303 (0857)27-5313 (092)261-2806 NEC NEC NECURL http
NEC
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k1982

transistor NEC D 586

Abstract: nec a 634 DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for lownoise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise and high-gain characteristics in a w ide collector , ) Date Published August 1996 P Printed in Japan © NEC Corporation 1996 NEC Note Test block , 10 50 Ic - Collector Current - mA V cb - Collector to Base Voltage -V 2 NEC
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transistor NEC D 586 nec a 634 NEC D 586 NEC 3500

blf578

Abstract: MRF6V2300N VCO varicap diodes Product : BFG425W NPN NXP NPN 4 SOT343R Wideband transistor , transistor MMIC RF transistor Wideband transistor Low noise wideband amplifier SiGe:C MMIC SiGe:C transistor Package SOT343 SOT343 Type BFG425W BFG410W SOT343R BGA2001 , Transistor SiGe:C transistor MMIC LNA BGA7124 SiGe:C MMIC Type SOT343R BGA2003 , RF bipolar transistor Product Antenna switch RF diode Product Varicap diodes VCO
NXP Semiconductors
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blf578 MRF6V2300N ic tea 2025 2SK163 radar amplifier s-band blf278 rf amplifier BLT50 BLT70 BLT80 BLT81 BSR56 BSR57

BFG591 amplifier

Abstract: 5.8GHz Analog RF mmic diodes Product BFG425W NPN NPN 4SOT343R Wideband transistor RF transistor Driver , transistor MMIC RF transistor Wideband transistor Low noise wideband amplifier SiGe:C MMIC SiGe:C transistor Package SOT343 SOT343 Type BFG425W BFG410W SOT343R BGA2001 , Product BGA7127 Package MMIC Low noise wideband amplifier RF Transistor SiGe:C transistor MMIC LNA BGA7124 SiGe:C MMIC Type SOT343R BGA2003 SOT343R BGA2001
NXP Semiconductors
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BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G smd code marking ft sot23 RF LNB C band chipset BSR58 BSS83 CGD1040H CGD1042H CGD1044H CGD914

ps2701A

Abstract: CSTCE8M00G15C NEC's HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER PS2801A-1 PS2801A-4 FEATURES DESCRIPTION · HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. NEC's PS2801A-1 and PS2801A-4 is an optically coupled isolator containing a GaAs light emitting diode and a NPN silicon phototransistor. This device is mounted , Collector Saturation Voltage, IF = 10 mA, IC = 2 mA V RI-O Isolation Resistance, VIN-OUT = 1 k VDC CI-O Transistor VCE (sat) Coupled 1.4 nA CTR MAX 1.2 pF TYP uA Ct
California Eastern Laboratories
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PS2701A-1-F3 PS2801A-1-F3 PS2801A-1-F4 PS2801A-4-F3 PS2801A-4-F4 ps2701A CSTCE8M00G15C transistor K 1413

PS2801A-1

Abstract: PS2801A-1-F3 NEC's HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER PS2801A-1 PS2801A-4 FEATURES DESCRIPTION · HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. NEC's PS2801A-1 and PS2801A-4 is an optically coupled isolator containing a GaAs light emitting diode and a NPN silicon phototransistor. This device is mounted , Collector Saturation Voltage, IF = 10 mA, IC = 2 mA V Isolation Resistance, VIN-OUT = 1 k VDC Transistor Coupled 1.4 nA CTR MAX 1.2 pF TYP A Ct MIN V Diode VF
California Eastern Laboratories
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Switching diode 4

nec 2501 optocoupler

Abstract: PS2805-4 NEC's HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP OPTOCOUPLER PS2805-1 PS2805-4 FEATURES DESCRIPTION · HIGH ISOLATION VOLTAGE BV: 2500 kVr.m.s. NEC's PS2805-1 and PS2805-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a , Coupled VCE(sat) PARAMETERS PS2805-1, PS2805-4 VF Transistor Diode SYMBOLS 2. Test , % Transistor VCEO VECO IC PC/°C PC Coupled BV TA TSTG Collector to Emitter Voltage Emitter to
California Eastern Laboratories
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PS2805-1-F3 PS2805-4-F3 nec 2501 optocoupler PS2805-1-F4 ps28xx PS2805-4-F4 nec photocoupler
Abstract: IF = 1 mA, VCE = 5 V · HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. · TAPE AND REEL AVAILABLE PS2911-1 DESCRIPTION The PS2911-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN , , VI-O = 1.0 k VDC Isolation Capacitance, V = 0 V, f = 1.0 MHz Rise Time2, VCC = 5 V, IC = 2 mA, RL = 100 , PS2911-1 4 3 MIN TYP 1.1 30 MAX 1.4 5 Diode VF IR CT Transistor ICEO CTR VCE(sat , 400 (%) K: 200 to 400 (%) L: 150 to 300 (%) M: 100 to 200 (%) 1 2 California Eastern NEC
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Abstract: IF = 1 mA, VCE = 5 V · HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. · TAPE AND REEL AVAILABLE PS2911-1 DESCRIPTION The PS2911-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN , , VI-O = 1.0 k VDC Isolation Capacitance, V = 0 V, f = 1.0 MHz Rise Time2, VCC = 5 V, IC = 2 mA, RL = 100 , PS2911-1 4 3 MIN TYP 1.1 30 MAX 1.4 5 Diode VF IR CT Transistor ICEO CTR VCE(sat , 400 (%) K: 200 to 400 (%) L: 150 to 300 (%) M: 100 to 200 (%) 1 2 California Eastern NEC
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Abstract: IF = 1 mA, VCE = 5 V · HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. · TAPE AND REEL AVAILABLE PS2911-1 DESCRIPTION The PS2911-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN , , VI-O = 1.0 k VDC Isolation Capacitance, V = 0 V, f = 1.0 MHz Rise Time2, VCC = 5 V, IC = 2 mA, RL = 100 , PS2911-1 4 3 MIN TYP 1.1 30 MAX 1.4 5 Diode VF IR CT Transistor ICEO CTR VCE(sat , 400 (%) K: 200 to 400 (%) L: 150 to 300 (%) M: 100 to 200 (%) 1 2 California Eastern NEC
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2SC1223

Abstract: 2SC2150 DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm) noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain , block diagram Coax. SW Coax. SW Noise Diode Stub Tuner Transistor Under Test Bias , 165.0 5.250 3.949 71.1 59.7 .0606 .0758 53.1 52.0 .421 .396 -46.2 -50.9 2500
NEC
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NEC NE "micro x" d 2SC2585 NEC NE "micro x" 2SC2148 NE AND micro-X noise diode

nec 2501 optocoupler

Abstract: PS2802-1 120 2500 -55 to +100 -55 to +150 TYPICAL PERFORMANCE CURVES (TA = 25 °C) TRANSISTOR POWER , HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE SOP OPTOCOUPLER PS2802-1 PS2802-4 FEATURES DESCRIPTION · HIGH ISOLATION VOLTAGE BV: 2.5 k Vr.m.s. PS2802-1 and PS2802-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon Darlington-connected , Terminal Capacitance, V = 0, f = 1 MHz MIN V Ct Transistor VF Current Transfer Ratio (IC
NEC
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PS2802-1-F3 PS2802-4-F3 PS2802-1-F4 PS2802-4-F4 diode MARKING F3 ps2802

nec 2501 optocoupler

Abstract: PS2811-4 NEC's HIGH CTR, 4 OR 16 PIN SOP OPTOCOUPLER FEATURES PS2811-1 PS2811-4 DESCRIPTION NEC's PS2811-1 and PS2811-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN , HIGH CURRENT TRANSFER RATIO: CTR = 200% TYP @ IF = 1 mA · HIGH ISOLATION VOLTAGE: BV: 2.5 k Vr.m.s , 1 mA, VCE = 5 V MAX uA Ct TYP 1.15 V VCE(sat) Transistor Forward Voltage , Notes: 1. CTR Rank PS2811-1 N: 100 to 400 (%) K: 200 to 400 (%) L: 150 to 300 (%) M: 100 to 200 (%
California Eastern Laboratories
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4 pin optocoupler OPTOCOUPLER 4-PIN application note optocoupler 2501 dip PS2801-1 PS2801-4 PS2811-1-F3

nec 2501 optocoupler

Abstract: nec photocoupler NEC's HIGH ISOLATION VOLTAGE PS2801-1 SOP OPTOCOUPLER PS2801-4 FEATURES DESCRIPTION · HIGH ISOLATION VOLTAGE BV: 2.5 k Vr.m.s. MIN NEC's PS2801-1 and PS2801-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP (Small Out-Line , MAX uA Ct CTR Transistor Forward Voltage, IF = 5 mA TYP 1.1 VF MIN 5 30 , Voltage Forward Current (DC) Power Dissipation Derating RATINGS PS2801-1 PS2801-4 Transistor
California Eastern Laboratories
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PS2801-1-F3 PS2801-4-F3 transistor m 1104 ic nec 2501 nec optocoupler PS2801-1-F4
Abstract: : CTR = 200% TYP @ IF = 1 mA, VCE = 5 V · HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. · TAPE AND REEL , emitting diode and an NPN silicon phototransistor in one package for high density mounting applications. An , Isolation Resistance, VI-O = 1.0 k VDC Isolation Capacitance, V = 0 V, f = 1.0 MHz Rise Time2, VCC = 5 V, IC , PS2915-1 MIN TYP 1.1 60 100 100 200 400 0.3 0.4 4 5 MAX 1.4 5 Diode VF IR CT Transistor ICEO , °C) SYMBOLS Diode VR IF PD/°C PD IF (Peak) Transistor VCEO VECO IC PC/°C PC Coupled BV PT TA TSTG PARAMETERS NEC
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transistor rf m 1104

Abstract: nec 2501 optocoupler ISOLATION VOLTAGE BV: 2.5 k Vr.m.s. MIN PS2801-1 and PS2801-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP (Small Out-Line , Diode V Ct Transistor Forward Voltage, IF = 5 mA TYP 1.1 VF MIN 5 30 100 , Voltage Forward Current (DC) Power Dissipation Derating RATINGS PS2801-1 PS2801-4 Transistor , Temperature V V mA/Ch mW/°C mW/Ch Vr.m.s. °C 2500 -55 to +150 °C -55 to +100 Operating
NEC
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transistor rf m 1104

nec 2401 optocoupler

Abstract: NEC 4 pin optocoupler NEC's HIGH CTR, 4 PIN ULTRA SMALL PACKAGE FLAT LEAD OPTOCOUPLER PS2911-1 FEATURES DESCRIPTION · SMALL AND THIN PACKAGE: 4.6 (L) x 2.5 (W) x 2.1 (H) mm NEC's PS2911-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in one , TRANSFER RATIO: CTR = 200% TYP @ IF = 1 mA, VCE = 5 V · HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. · TAPE , Transistor UNITS VF CT Diode SYMBOLS PS2911-1 PARAMETERS Isolation Resistance, VI-O =
California Eastern Laboratories
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nec 2401 optocoupler NEC 4 pin optocoupler PS2911-1-F3 PS2911-1-F4
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