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A2T26H160-24SR3 Freescale Semiconductor AIRFAST RF POWER LDMOS TRANSISTOR, 2496 - 2690 MHz, 28 W AVG, 28 V ri Buy
MRF5711LT1 Freescale Semiconductor TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 318A-05, 4 PIN, BIP RF Small Signal ri Buy
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NPN/transistor NEC K 2500

Catalog Datasheet Results Type PDF Document Tags
Abstract: DATA SHEET SILICON TRANSISTOR 2SC3604 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector , f (MHz) 500 1000 1500 2000 2500 3000 3500 4000 3 NEC S PARAMETER 2SC3604 2SC3604 Sue, S22e- , - Collector to Base Voltage -V 2 NEC 2SC3604 2SC3604 INSERTION GAIN vs. C O 0.5 1 5 ... OCR Scan
datasheet

8 pages,
161.4 Kb

transistor marking S00 transistor K 1352 NEC marking b NEC K 2500 2SC3603 2SC2367 NEC PART NUMBER MARKING 2SC3604 2SC1223 2SC3604 abstract
datasheet frame
Abstract: DATA SHEET SILICON TRANSISTOR 2SC3587 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 2SC3587 is an NPN epitaxial transistor designed for lownoise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise and high-gain characteristics in a w ide collector , ) Date Published August 1996 P Printed in Japan © NEC Corporation 1996 NEC Note Test block , 10 50 Ic - Collector Current - mA V cb - Collector to Base Voltage -V 2 NEC ... OCR Scan
datasheet

8 pages,
151.57 Kb

NEC D 586 2SC3587 nec a 634 transistor NEC D 586 2SC3587 abstract
datasheet frame
Abstract: Compound Transistor µ PA81C PA81C PNP, NPN LED µPA81C PA81C NPN 7 mm IC 16 15 14 13 12 11 10 , 2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com , V 1.5 mA II 1000 2500 VI = 17 V, IO = 0 1 16 2 15 3 14 4 13 5 12 6 11 7 10 R1 = 20 k RB1 = 20 k RB2 = 2 k R1 RB1 8 RB2 G16464JJ2V0DS00 G16464JJ2V0DS00 2 IC-5917 IC-5917 October 2002 NS CP(K) 1982 µPA81C PA81C Ta = 25°C ° DC CURRENT GAIN ... Original
datasheet

6 pages,
264.34 Kb

PA81C uPA81C nec PA81c datasheet abstract
datasheet frame
Abstract: Compound Transistor µ PA81C PA81C PNP, NPN LED µPA81C PA81C NPN 7 mm IC 16 15 14 , 1.2 2.2 V 1.5 mA 1000 hFE 2500 VI = 17 V, IO = 0 II 1 16 2 15 3 14 4 13 5 12 6 11 7 10 R1 = 20 k RB1 = 20 k RB2 = 2 k R1 RB1 8 RB2 G16464JJ2V0DS00 G16464JJ2V0DS00 2 IC-5917 IC-5917 October 2002 NS CP(K) 1982 µPA81C PA81C , )226-1702 (054)254-4794 (076)232-7303 (0857)27-5313 (092)261-2806 NEC NEC NECURL http ... Original
datasheet

4 pages,
54.83 Kb

PA81C nec PA81c uPA81C PA81C abstract
datasheet frame
Abstract: DATA SHEET SILICON TRANSISTOR 2SC3604 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector , ) Date Published August 1996 P Printed in Japan © NEC Corporation 1996 NEC 2SC3604 2SC3604 , - Collector Current - mA V cb - Collector to Base Voltage -V 2 NEC 2SC3604 2SC3604 INSERTION ... OCR Scan
datasheet

5 pages,
314.98 Kb

TRANSISTOR 2sC 5250 2sc3604 2SC3604 2SC3604 abstract
datasheet frame
Abstract: IF = 1 mA, VCE = 5 V · HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. · TAPE AND REEL AVAILABLE PS2911-1 PS2911-1 DESCRIPTION The PS2911-1 PS2911-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN , , VI-O = 1.0 k VDC Isolation Capacitance, V = 0 V, f = 1.0 MHz Rise Time2, VCC = 5 V, IC = 2 mA, RL = 100 , PS2911-1 PS2911-1 4 3 MIN TYP 1.1 30 MAX 1.4 5 Diode VF IR CT Transistor ICEO CTR VCE(sat , 400 (%) K: 200 to 400 (%) L: 150 to 300 (%) M: 100 to 200 (%) 1 2 California Eastern ... Original
datasheet

2 pages,
29.75 Kb

datasheet abstract
datasheet frame
Abstract: IF = 1 mA, VCE = 5 V · HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. · TAPE AND REEL AVAILABLE PS2911-1 PS2911-1 DESCRIPTION The PS2911-1 PS2911-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN , , VI-O = 1.0 k VDC Isolation Capacitance, V = 0 V, f = 1.0 MHz Rise Time2, VCC = 5 V, IC = 2 mA, RL = 100 , PS2911-1 PS2911-1 4 3 MIN TYP 1.1 30 MAX 1.4 5 Diode VF IR CT Transistor ICEO CTR VCE(sat , 400 (%) K: 200 to 400 (%) L: 150 to 300 (%) M: 100 to 200 (%) 1 2 California Eastern ... Original
datasheet

2 pages,
19.47 Kb

datasheet abstract
datasheet frame
Abstract: NEC's HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER PS2801A-1 PS2801A-1 PS2801A-4 PS2801A-4 FEATURES DESCRIPTION · HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. NEC's PS2801A-1 PS2801A-1 and PS2801A-4 PS2801A-4 is an optically coupled isolator containing a GaAs light emitting diode and a NPN silicon phototransistor. This device is mounted , Collector Saturation Voltage, IF = 10 mA, IC = 2 mA V RI-O Isolation Resistance, VIN-OUT = 1 k VDC CI-O Transistor VCE (sat) Coupled 1.4 nA CTR MAX 1.2 pF TYP µA Ct ... Original
datasheet

5 pages,
116.62 Kb

ps2701A transistor K 1413 PS2701A-1-F3 PS2801A-1 PS2801A-1-F3 PS2801A-1-F4 PS2801A-4 PS2801A-4-F3 PS2801A-4-F4 CSTCE8M00G15C PS2701A-1-F3 abstract
datasheet frame
Abstract: NEC's HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER PS2801A-1 PS2801A-1 PS2801A-4 PS2801A-4 FEATURES DESCRIPTION · HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. NEC's PS2801A-1 PS2801A-1 and PS2801A-4 PS2801A-4 is an optically coupled isolator containing a GaAs light emitting diode and a NPN silicon phototransistor. This device is mounted , Collector Saturation Voltage, IF = 10 mA, IC = 2 mA V Isolation Resistance, VIN-OUT = 1 k VDC Transistor Coupled 1.4 nA CTR MAX 1.2 pF TYP A Ct MIN V Diode VF ... Original
datasheet

5 pages,
287.73 Kb

Switching diode 4 PS2801A-4-F4 PS2801A-4-F3 PS2801A-4 PS2801A-1-F4 PS2801A-1-F3 PS2801A-1 CSTCE8M00G15C PS2801A-1-F3 abstract
datasheet frame
Abstract: DATA SHEET SILICON TRANSISTOR 2SC3604 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm) noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain , block diagram Coax. SW Coax. SW Noise Diode Stub Tuner Transistor Under Test Bias , 165.0 5.250 3.949 71.1 59.7 .0606 .0758 53.1 52.0 .421 .396 -46.2 -50.9 2500 ... Original
datasheet

8 pages,
92.66 Kb

noise diode 2SC2148 2SC2149 2SC3587 2SC3603 NE AND micro-X 2SC3604 2SC2585 NEC NE "micro x" NEC NE "micro x" d 2SC2367 2SC2150 2SC1223 2SC3604 abstract
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