TTC5886A
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
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TTA2097
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
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XPH13016MC
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Toshiba Electronic Devices & Storage Corporation
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P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) |
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XPH8R316MC
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Toshiba Electronic Devices & Storage Corporation
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P-ch MOSFET, -60 V, -90 A, 0.0064 Ω@-10V, SOP Advance(WF) |
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TPH3R10AQM
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 100 V, 120 A, 0.0031 Ω@10V, SOP Advance(N) |
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TPH2R408QM
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Toshiba Electronic Devices & Storage Corporation
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MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance |
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