TTC5886A
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
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CA3046
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Rochester Electronics LLC
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RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN |
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TTA2097
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
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MG800FXF1JMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
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MG800FXF1ZMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD |
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TLP5702H
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Toshiba Electronic Devices & Storage Corporation
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Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L |
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