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TIP121 Texas Instruments NPN Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil
HFA3134IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS1-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERDIP-16 visit Intersil

NPN Transistor 2N3055

Catalog Datasheet MFG & Type PDF Document Tags

NPN Transistor 2N3055

Abstract: transistor 2N3055 Silicon NPN Transistor 2N3055 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A _ .875 _ 22.23 Dia. B .250 .450 6.35 11.43 C .435 - 11.05 - D .038 .043 .97 1.09 Dia. E 1.177 1.197 29.90 30.40 F .655 .675 16.64 17.15 G .420 .440 10.67 11.18 H - .525 - 13.34 Rad. J .151 .161 3.84 4.09 Dia. K .205 .225 5.21 5.72 L - .135 - 3.43 M - .188 - 4.78 Rad. TO-204AA (TO , ; 466-3775 www. microsemi, com 2N3055 PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS Baseâ'"Emitter On
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NPN Transistor 2N3055 transistor 2N3055 J 2N3055 transistor k 525

12v 10A car battery charger wiring diagram

Abstract: 2N3055 CHARGER schematic diagram L4955 drives the base of a npn transistor (2N3055). This configuration can deliver up to 10A . This , NPN transistor, driven directly by a PNP type. Example of this design solution is the L2600 family , VIN Figure 3. Low drop Regulator with NPN Transistor. VIN VOUT Q1 Q1 Q2 Q2 Q3 E , of a npn power transistor. The current target of the application must take into account the , by the Vceon of a npn power transistor. The current target of the application must take into account
STMicroelectronics
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12v 10A car battery charger wiring diagram 2N3055 CHARGER schematic diagram 2N3055 diagram with power supply 2N3055 application note pin configuration transistor 2n3055 NPN Transistor 2N3055 darlington AN932 D97IN610A

2N3055 transistor equivalent to220

Abstract: 12v 10A car battery charger wiring diagram drives the base of a npn transistor (2N3055). This configuration can deliver up to 10A . To fix these , NPN transistor, driven directly by a PNP type. Example of this design solution is the L2600 family , VIN Figure 3. Low drop Regulator with NPN Transistor. VIN VOUT Q1 Q1 Q2 Q2 Q3 E , reduced by the Vceon of a npn power transistor. The current target of the application must take into , of a npn power transistor. The current target of the application must take into account the
STMicroelectronics
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2N3055 transistor equivalent to220 2N3055 equivalent mosfet 2N3055 pin out connections smd transistor 2N3055 2N3055 transistor equivalent 2n3055 use in battery charger

smd transistor 2N3055

Abstract: TRANSISTOR 2n3055 a npn transistor (2N3055). This configuration can deliver up to 10A . To fix these concepts let us , NPN transistor, driven directly by a PNP type. Example of this design solution is the L2600 family , VIN Figure 3. Low drop Regulator with NPN Transistor. VIN VOUT Q1 Q1 Q2 Q2 Q3 E , reduced by the Vceon of a npn power transistor. The current target of the application must take into , of a multi-Amps regulators making use of an N-channel lateral D-Mos transistor, versus the most
STMicroelectronics
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2n3055 voltage regulator pin out TRANSISTOR 2n3055 12v car battery charger wiring diagram 2N3055 equivalent equivalent transistor 2n3055 1004CL

2n3055

Abstract: 2N3055 NPN Transistor 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) à à à à à à , Area http://onsemi.com 2 2N3055(NPN), MJ2955(PNP) 500 200 300 VCE = 4.0 V TJ = 150 , ) Figure 3. DC Current Gain, 2N3055 (NPN) IC = 1.0 A TJ = 150°C 5000 2.0 TJ = 25°C 1.6 IC , 1000 2000 5000 IB, BASE CURRENT (mA) Figure 5. Collector Saturation Region, 2N3055 (NPN
ON Semiconductor
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2N3055 NPN Transistor 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 204AA 2N3055/D

2N3055L-T30-Y

Abstract: UNISONIC TECHNOLOGIES CO., LTD 2N3055 NPN SILICON TRANSISTOR SILICON NPN TRANSISTORS  DESCRIPTION The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power , of 3 QW-R205-003.B 2N3055 NPN SILICON TRANSISTOR UTC assumes no responsibility for , www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R205-003.B 2N3055  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( TA=25ï'°C ,unless otherwise specified ) PARAMETERS
Unisonic Technologies
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2N3055L-T30-Y

2n3055 application note

Abstract: 2N3055 power amplifier circuit diagram 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . , Industries, LLC, 2005 1 May 5, 2005 - Rev. 5 Publication Order Number: 2N3055/D 2N3055(NPN , Area http://onsemi.com 2 2N3055(NPN), MJ2955(PNP) 500 300 hFE , DC CURRENT GAIN 200 100 70 50 , Figure 3. DC Current Gain, 2N3055 (NPN) Figure 4. DC Current Gain, MJ2955 (PNP) VCE , IB, BASE CURRENT (mA) 5000 Figure 5. Collector Saturation Region, 2N3055 (NPN) 1.4 1.2 V
ON Semiconductor
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2n3055 pin out diagram 2N3055 typical applications 2n3055 circuit 2N3055 power circuit 2N3055 power amplifier circuit 2N3055G
Abstract: UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS SYMBOL VALUE UNITS VCBO VCEO VEBO VCEV Ic ICM IB IBM , 1.1 3.0 UNISONIC TECHNOLOGIES CO. LTD V 1 UTC 2N3055 SILICON NPN TRANSISTOR Unisonic Technologies
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2N3055

Abstract: DC variable power with 2n3055 Figure 3. DC Current Gain, 2N3055 (NPN) Figure 4. DC Current Gain, MJ2955 (PNP) VCE , 2000 IB, BASE CURRENT (mA) 5000 Figure 5. Collector Saturation Region, 2N3055 (NPN) 1.4 1.2 V , ) IC, COLLECTOR CURRENT (AMP) Figure 7. "On" Voltages, 2N3055 (NPN) Figure 8. "On" Voltages , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location
ON Semiconductor
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DC variable power with 2n3055 power transistor 2n3055 2N3055 transistor 2n3055 amplifier 2n3055h mj2955 safe operating area

2n3055

Abstract: 2N3055 curve mA MAXIMUM RATINGS NPN PNP 2N3055 MJ2955 Characteristic Symbol Rating Unit Collector-Emitter , ://www.bocasemi.com 2N3055 NPN / MJ29S5 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted , (VOLTS) http://www.bocasemi.com 2N3055 NPN / MJ2955 PIMP NPN 2N3055 DC CURRENT GAIN PNP MJ2955 DC , ) 15 120 There are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits of the transistor that must
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2N3055 curve 2n3055 collector characteristic curve MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier npn 2n3055 2N3055/MJ2955

2n3055

Abstract: 2N3055G 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , . Publication Order Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Region Safe Operating Area http://onsemi.com 2 2N3055(NPN), MJ2955(PNP) 500 200 TJ = 150 , VOLTAGE (VOLTS) Figure 3. DC Current Gain, 2N3055 (NPN) IC = 1.0 A VCE = 4.0 V TJ = 150 , Saturation Region, 2N3055 (NPN) 10 20 50 100 200 500 1000 2000 IB, BASE CURRENT (mA) 5000
ON Semiconductor
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MJ2955 300 watts amplifier circuit diagram pnp transistor 2N3055 2N30 2n3055 equal MJ2955G MJ2955 2n3055 200 watts amplifier diagram

MJ2955 TRANSISTOR

Abstract: pnp transistor 2N3055 A * V cE (*t) * NPN 2N3055 PNP MJ2955 11 v @ 'c = 4 0 A - 'b = 400 , 17.30 4.36 11.18 2N3055 NPN / MJ2955 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise , the limitations imposed by second breakdown. 2N3055 NPN / MJ2955 PNP NPN 2N3055 DC C U R R E N T , 2.0% (2 ) f T = | K » | * f tort MHz 2.5 15 120 2N3055.MJ2955 AC TIVE REG ION SAFE O PERATING AREA(SOA) There are two limitation on the power handling ability of a transistor: average junction
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MJ2955 TRANSISTOR Transistor MJ2955 Mj2955 power transistor data transistor 2n3055 t 2N3055 2n3055 pin

2n3055

Abstract: 2N3055M NPN PNP 2N3055 MJ2955 Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 60 V , 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 2N3055 NPN / MJ29S5 , NPN / MJ2955 PIMP NPN 2N3055 DC CURRENT GAIN PNP MJ2955 DC CURRENT GAIN 300 100 70 50 0.1 ~ T , are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits of the transistor that must be
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2N3055M 2N3055MJ

2N3055

Abstract: 2N3055 NPN Transistor UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS SYMBOL VALUE UNITS VCBO VCEO VEBO VCEV Ic ICM IB IBM , 1.1 3.0 CO. LTD V 1 QW-R205-003,A UTC 2N3055 SILICON NPN TRANSISTOR PARAMETER
Unisonic Technologies
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2N3055 silicon 2n3055 npn power transistor 2N3055 series voltage regulator 2N3055 TO-3

2n3055 transistor

Abstract: 2N3055 2N3055 SILICON NPN TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended , Collector Current A 115 W -65 to 200 o C 200 o C 1/4 2N3055 THERMAL DATA , Current (V BE = -1.5V) Min. V 50 75 145 250 70 1.6 2.5 MHz 2.87 A 2N3055 , 1.193 A P C O N B V E G U D R P003F 3/4 2N3055
STMicroelectronics
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2n3055 malaysia transistor 1547 b 2N3055 schematic diagram 2N3055 JAPAN 2n3055 sgs internal schematic diagram for 2n3055

2n3055 sgs

Abstract: 2n3055 SCS-THOMSON dD©oeilLIiêîi®iQ©i 2N3055 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol , June 1997 1/2 77 2N3055 THERMAL DATA Rthj case Thermal Resistance Junction-case Max 1.5 JC/W
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sgs 2n3055 TRANSISTOR L 287 A

2n3055 malaysia

Abstract: MJ2955 2n3055 200 watts amplifier 20 to 70 at IC = 4.0A. · VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. NPN 2N3055 PNP , imposed by second breakdown. VCE, Collector Emitter Voltage (Volts) NPN 2N3055 PNP MJ2955 DC , PNP MJ2955 "ON" Voltages "ON" Voltages V, Voltage (Volts) V, Voltage (Volts) NPN 2N3055 , ) Package 115 TO-3 Page 4 Type Part Number NPN 2N3055 PNP MJ2955 31/05/05 V1 , 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and
Multicomp
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2n3055 pnp 2n3055 IC 2N3055 MJ2955 2N3055 equivalent transistor NUMBER

2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES , Transistor Device Data *2N3055/D* 2N3055/D Motorola
Motorola
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2N3055 MOTOROLA 2N3055 NPN MOTOROLA POWER TRANSISTOR 2n3055 datasheet 2N3055* motorola 2n3055-1 motorola power transistor 2N3055

2N3055

Abstract: 2N3055 NPN Transistor UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS SYMBOL VALUE UNITS VCBO VCEO VEBO VCEV Ic ICM IB IBM , TECHNOLOGIES CO. LTD V 1 QW-R205-003,A UTC 2N3055 SILICON NPN TRANSISTOR PARAMETER SYMBOL
Unisonic Technologies
Original

2n3055 malaysia

Abstract: 2N3055 NPN Transistor 2N3055 SILICON NPN TRANSISTOR . STM PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended tor power , Junction T em perature V CEO V ebo lc Ib Plot Tstg Tj °c °c 1/4 June 1998 2N3055 , 2/4 2N3055 TO-3 MECHANICAL DATA mm DIM. MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 , 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 inch P003F 3/4 2N3055 Information
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2N3055 ST 2N3055 MEXICO transistor B 892 2N3055 specification value of 2n3055 ST 2N3055
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