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LTC3867IUF#PBF Linear Technology LTC3867 - Synchronous Step-Down DC/DC Controller with Differential Remote Sense and Nonlinear Control; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices

NONLINEAR MODEL LDMOS

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: hampered the industry from using simulation for non-linear designs. Polyfet RF Devices supplies Spice , analyzing non-linear behavior and efficiency. With todayâ'™s requirements in designing for digital radios , 350 S imulated 375 400 Slide 6 Steps for Spice Extraction DC Model. IV curve matching n AC model - Generate Power Dependent S parameters. n Final model - Device and Package Parasitics , order to generate Spice models Slide 7 DC Model n n n n Good to know Gate Length Polyfet RF Devices
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Abstract: , this library contains from Version V04p0 release onwards, a new basic model for the LDMOS models, which , from the NXP LDMOS Model Library version V03p0 and older, you have to replace the old models with new , "Open". The NXP LDMOS Model will be loaded into the new MWO project. b. To add the NXP LDMOS Model to an , "Add" button, then open "NXP_.ini". Press "OK" and the NXP LDMOS Model will be added to your , NXP RFpower Model Library Manual for Microwave Office Version 20120420 Contents · · · · · · NXP Semiconductors
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transistor directory Gan transistor LDMOS microwave office
Abstract: AN2657 Application note An innovative verilog model for predicting LDMOS DC, small and large , how to extract the model parameters for the PD54003L-E device, which is a 3 W - 7.2 V - 500 MHz LDMOS , transistors. Recently, STMicroelectronics has been strongly focused on developing new models for RF LDMOS power transistors. The model introduced here is simple in concept, and describes with good , designers in developing their new applications. This model has been implemented in Agilent Advanced Design STMicroelectronics
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DB-54003L-175 walkie-talkie microwave heating equations military mobility PD54003L T200
Abstract: transistors and RF ICs is a nonlinear model that examines both electrical and thermal phenomena and can , Medical Transistors RF LDMOS Power Transistors RF GaAS Power Transistors RF WiMAX, WiBro, BWA Power , VDD Volts Gain (Typ)/Freq. dB/MHz Eff. TV Broadcast - LDMOS Power Transistors Product , Volts Gain (Typ)/Freq. dB/MHz Eff. Cellular - To 500 MHz - LDMOS Power Transistors Product , Gain (Typ)/Freq. dB/MHz Eff. Cellular - To 1000 MHz - LDMOS Power Transistors Product Freescale Semiconductor
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MRF6VP11KH MRF6VP2600H MW6IC2420NB gsm booster circuit mrf373al u880 RF MODULATORS mrf9030n mrfe6s9060 SG1009Q42007 MRF6VP21KH MRF6VP41KH/HS MRF6V2010N/NB MRF6V2150N/NB
Abstract: LDMOS transistors is a nonlinear model that for the first time examines both electrical and thermal , tailored to model high power RF LDMOS transistors used in base station, HDTV digital broadcast, and land , .3) harmonic balance simulator, the MET LDMOS model is capable of performing small­signal, large­signal , subscribe, just fill out the RF LDMOS Transistor Model Subscription form on­line at http://www.motorola.com , , Daren Bridges, Tao Liang, Eric Shumate and W. R. Curtice, "A New Dynamic Electro­Thermal Nonlinear Model Motorola
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HP RF TRANSISTOR GUIDE MRF286 MHL9838 MRF210305 High frequency MRF transistor mrf284 SG384/D
Abstract: model is an empirical large­signal, nonlinear model. The MET model can accurately represent the , LDMOS Model libraries, go to: http://www.motorola.com/rf/models NOTE: For better viewing on the Web , by AN1941/D AN1941 Modeling Thermal Effects in RF LDMOS Transistors Prepared by: Darin Wagner , model and MET (Motorola Electro Thermal) model. All examples contained within this application note are based on simulation results from Agilent EEsof EDA Advanced Design System (ADS). ROOT MODEL The Motorola
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MRF19125 sweep generator MOTOROLA motorola amplifiers examples FET model
Abstract: voltage LDMOS technology (HV6), the new portfolio features a wide array of low-cost plastic devices and , performance benefits include higher operating efficiency (5 to 15 percent) than previous LDMOS generations , markets. Utilizing LDMOS, BiCMOS, GaAs and SMARTMOSt technologies, Freescale is committed to the , CONTROL RF TRANSISTORS RF TRANSISTORS RF HIGH POWER LDMOS TRANSISTORS Freescale Semiconductor LDMOS technology is ideally suited for RF power amplifier applications. Several families of products Freescale Semiconductor
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SG1009Q32005 MMM6025 MRF377HR5 MRF6S9045NR1 MRF6S9045NBR1 MRF6S9060NR1 stripline directional couplers MRFP36030 MRF1511NT1 ESD MRF5S9080NB MC13820 MRF377HR3
Abstract: voltage LDMOS technology (HV6), the new portfolio features a wide array of low-cost plastic devices and , efficiency (5 to 15 percent) than previous LDMOS generations, higher gain (1 to 2 dB) and improved backoff , markets. Utilizing LDMOS, GaAs, SiGe:C, RF CMOS and SMARTMOSt technologies, Freescale is committed to the , TRANSISTORS RF High Power LDMOS Transistors Freescale Semiconductor LDMOS technology is ideally suited for , , GSM EDGE, PCS, UMTS, and W-CDMA. With the unique LDMOS characteristics, these parts offer superior Freescale Semiconductor
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MMM6007 MMM6029 baseband DigRF semiconductor cross index MW6S010 MRFG35003N6T SG1009Q42005 MMM6035 MRF6P3300HR3 MRF6P3300HR5 MRF6S9060NBR1 MRF6S9125NR1
Abstract: 50 Ohms Low Cost PQFN 5x5 Package EXPANDED PORTFOLIO OF 6TH GENERATION (HV6) RF LDMOS DEVICES , wireless infrastructure and subscriber markets. Utilizing LDMOS, BiCMOS, GaAs and SMARTMOSt technologies , MC68HC908RF2/D SG1009-8 SG1009Q42004 RF TRANSISTORS RF HIGH POWER LDMOS TRANSISTORS Freescale Semiconductor LDMOS technology is ideally suited for RF power amplifier applications. Several families of , cellular, GSM, TDMA and CDMA, digital television, GSM EDGE, PCS, UMTS, and W-CDMA. With the unique LDMOS Motorola
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TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module MRF5S9070NR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 MRF5S9100NBR1 MRF5S9101MR1
Abstract: LDMOS die technology and offers a 4 to 5 percentage point increase in efficiency over previous , LINE-UPS Examples include: With Motorola's new developments in RF LDMOS integrated power amplifiers , -3 What's New! (continued) SIXTH GENERATION RF LDMOS TECHNOLOGY SETS INDUSTRY STANDARDS WITH HIGHER PERFORMANCE AND EFFICIENCY Motorola's sixth generation (HV6) RF LDMOS technology offers unsurpassed quality , infrastructure and subscriber markets. Utilizing LDMOS, BiCMOS, GaAs and SMARTMOSt technologies, Motorola is Motorola
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MRF9210 MHVIC915R2 MG4100 M 9587 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 SG1009/D MRF377 MW4IC001MR4 MWIC930R1
Abstract: . This simulation can be achieved by two methods. First the circuit uses a nonlinear model and nonlinear , nonlinear model and the data file agree, both simulations will yield the same measurement data. In the case of using a non-linear model with a nonlinear simulator, the simulation results are generally very close to actual amplifier performance. Nonlinear simulators provide gain compression, power output , matching networks for an LDMOS power amplifier that delivers consistent performance over more than a Polyfet RF Devices
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LR401
Abstract: Medical Transistors RF LDMOS Power Transistors RF GaAS Power Transistors RF WiMAX, WiBro, BWA Power , Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. TV Broadcast - LDMOS Power , LDMOS Power Transistors Product Frequency Band(37) MHz JC MW6S004N U 1-2000 MW6S010N , Selector Guide. SG1009-2 SG1009Q22009 Cellular - To 1000 MHz - LDMOS Power Transistors Product , Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. General Purpose LDMOS Drivers Freescale Semiconductor
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MRF5P21180H gsm 900 dual band signal booster gsm signal Booster MRF8S21170H gsm signal booster circuit circuit booster gsm MRF6V2300N/NB MRF6V4300N/NB MRF6V10010N MRF6V14300H/HS MW6IC2425N/GN/NB
Abstract: compensation; poor initial accuracy; non-linear output voltage RTD Operate over a wide temperature range; requires signal conditioning circuits to obtain an output voltage; very accurate; non-linear resistance , signal conditioning circuits to obtain an output voltage; non-linear resistance vs temperature curve , temperature sensors exhibit a non-linear output response vs temperature which require complex linearizing , ranging from - 8.75 mA/ °C to + 8.75 mA/ °C (M = 0 to 255). RFPA LDMOS Bias LDMOS transistors are Intersil
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ISL21400 AN1446 BLUERAY DSP radar using ultrasonic sensor LM35 sensor projects Blue-ray laser circuit diagram dvd writer laser diode LM35 based fan control T/273
Abstract: 25dB 8W1 2.14GHz Single carrier W-CDMA, 3GPP Test Model 1/64, 8.5dB PAR 2.5GHz Single carrier , EssentialsTM - In-depth application notes · Nonlinear device models Reliability · Qualification reports , GaN-on-Silicon Now Compared to Si LDMOS and GaAs, GaN offers the performance improvements you need · Better Nitronex
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NPTB00004 NPT25015 NPT35015 NPT1012 AC200B NPTB00025 GaN amplifier 100W Gan on silicon transistor PO150S
Abstract: of a non-linear model which can predict for a particular load, which is the I, V trajectory. An , and LDMOS technologies in the range of 1W to 10W. A new series of high voltage HBT devices were , published results from other technologies. 2.0 HV InGaP HBT Technology 2.1 InGaP HBT vs. LDMOS , frequency power devices to address high linearity application. In the past, LDMOS has been the incumbent RF , of the future wireless communication systems, LDMOS is gradually running out of steam. InGaP HBT WJ Communications
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AP601 AP602 AP603 volterra HBT 01 05G VOLTERRA SEMICONDUCTOR SOA gummel 31-0q IMS2006 IMS2005 1-800-WJ1-4401
Abstract: performance. Figure 6 illustrates a model of a LDMOS power amplifier with plotted complex conjugate load , simple LDMOS model with indicated complex conjugate loads: Z0 = 5, RL = RS = 13, CS = 47.5 pF, LS = , dimensions. In this packaged 28V, 30W, LDMOS model RS Model = RL = 282 / 2 ( 30) = 13 For 900 MHz the , now offer a complete simulation toolset with non-linear synthesis and layout functions. When the , semiconductor device (LDMOS) load pull performance contours in Figure 5. The trajectory intersects several RF Micro Devices
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AN-721 transistor substitution chart broadband impedance transformation MOTOROLA small signal transistors smith
Abstract: [8] B. O hAnnaidh and T.J. Br razil, â'An accurate nonlinear MOSFET model for intermodulation , '" This paper presents the large-signal model requirements and generation as well as the 1- and 2 , prediction for the 2-tone inter-modulation product up to the 5th order. Index Terms â'" MOSFET model, PSP model, largesignal modeling, non-linearity modeling I. INTRODUCTION The CMOS PA has attracted many , the MOSFET non-linear behavior at high frequencies, but their approach is either based on 1 Skyworks Solutions
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RTUIF-28
Abstract: applications, and is moving quickly into the wireless arena, currently the domain of silicon LDMOS devices , includes all of the essential technology: linear and nonlinear circuit simulators, EM analysis tools , trademarks and Unified Data Model is a trademark of AWR Corporation. All others are property of their Cree
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CGH21240F CDPA21480 Microwave Devices digital Pre-distortion LDMOS NONLINEAR MESFET
Abstract: effects. The MET model for RF High Power transistors and RF ICs is a nonlinear model that examines both , . How to Use This Selector Guide The RF Low Power Components, LDMOS Power Transistors, GaAs Power , . . . . . 10 ISM Band - 2.45 GHz . . . . . . . . . . . . . . . . . . . . . . . . 10 RF LDMOS , . . . . . . 13 General Purpose LDMOS Drivers -To 2100 MHz . . . . . . . . . . . . . . . . . . . . . , its RF High Power Model Library with MET and Root models. All product models available in the RF Freescale Semiconductor
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power transistors table MW6S010NR1 MHW6342TN mrfe6s9060n Motorola Microwave power Transistor
Abstract: internal matching. NXP Semiconductors provides a non-linear simulation model of the BLF578 for use with , well with the non-linear model and the broadband performance of the device up to 500 MHz · The , Application note Document information Info Content Keywords BLF578, LDMOS, DVB, planar balun , required. The BLF578 is a 1200 W LDMOS power transistor for broadcast transmitter applications and , LDMOS RF transistor in a DVB-T broadcast application. However, another significant objective is to NXP Semiconductors
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AN10858 planar transformer theory DVB-T Schematic TIC4000 planar transformer layout ATC800B101GT500X
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