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Part : OMNI650LCD Supplier : Tripp Lite Manufacturer : Newark element14 Stock : - Best Price : $137.1800 Price Each : $157.4600
Part : FP-MINI-650-1-F Supplier : Laser Components Manufacturer : TME Electronic Components Stock : 3 Best Price : $113.10 Price Each : $132.42
Part : OMNI650LCD Supplier : Tripp Lite Manufacturer : Master Electronics Stock : 1 Best Price : $128.18 Price Each : $142.03
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NI-650

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 860 MHz, 100 W, 28 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET CASE 375F­04, STYLE 1 NI­650 , ISSUE D NI­650 Motorola reserves the right to make changes without further notice to any products Motorola
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MRF374 MRF374/D
Abstract: Thermal Stability Characterized with Differential Large-Signal Impedance Parameters CASE 375F-04 NI-650 New Jersey Semiconductor
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IMD--31 IMD--34 R03010
Abstract: CASE 375F­04, STYLE 1 (NI­650) MAXIMUM RATINGS Rating Drain­Source Voltage Gate­Source Voltage , . 5. CASE 375F­04 ISSUE D (NI­650) Motorola reserves the right to make changes without further Motorola
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J352 MRF374A/D MRF374A
Abstract: N­CHANNEL BROADBAND RF POWER MOSFET CASE 375F­04, STYLE 1 NI­650 MAXIMUM RATINGS Rating Symbol , 0.254 BSC 0.381 BSC DRAIN DRAIN GATE GATE SOURCE CASE 375F­04 ISSUE D NI­650 Motorola Motorola
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RO3010 motorola balun variable capacitor rogers capacitor transistor j352 C14A
Abstract: CASE 375F­04, STYLE 1 NI­650 MAXIMUM RATINGS Rating Drain­Source Voltage Gate­Source Voltage Total , STYLE 1: PIN 1. 2. 3. 4. 5. CASE 375F­04 ISSUE D NI­650 Motorola reserves the right to make Motorola
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transistor L1A 1206 capacitor chip pads layout 470 860 mhz PCB bc17a
Abstract: 860 MHz, 100 W, 28 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET CASE 375F­04, STYLE 1 NI­650 , ISSUE D NI­650 Motorola reserves the right to make changes without further notice to any products Motorola
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C13B z14b c18a Z10A vitramon RF POWER VERTICAL MOSFET 1000 w
Abstract: 375F-04, STYLE 1 NI-650 Table 1. Maximum Ratings Rating Drain-Source Voltage Gate-Source Voltage , CASE 375F-04 ISSUE E NI-650 STYLE 1: PIN 1. 2. 3. 4. 5. MRF374A RF Device Data Freescale Freescale Semiconductor
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J239 mosfet transistor L1AB
Abstract: 375F­04, STYLE 1 NI­650 MAXIMUM RATINGS Rating Symbol Value Unit Drain­Source Voltage , 375F­04 ISSUE D NI­650 Motorola reserves the right to make changes without further notice to any Motorola
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balun 50 kW C12A C12B Vishay Dale 800 ohm resistors
Abstract: 860 MHz, 100 W, 28 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET CASE 375F­04, STYLE 1 NI­650 , DRAIN DRAIN GATE GATE SOURCE (FLANGE) CASE 375F­04 ISSUE D NI­650 Motorola reserves the Motorola
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r1a transistor VJ2225Y
Abstract: (NI­650) MAXIMUM RATINGS Rating Drain­Source Voltage Gate­Source Voltage Total Device Dissipation Motorola
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Abstract: NI­650 MAXIMUM RATINGS Rating Drain­Source Voltage Gate­Source Voltage Total Device Dissipation @ Motorola
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RF POWER VERTICAL MOSFET
Abstract: (NI-650) SC E ED IV CH AR Case 458B Style 1 (NI-200S) Scale 1:1 BY Case 458C Motorola
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MHVIC910HR2 MHW8202B MHW6181 MRF151G MRF455 APPLICATION NOTES MRF9135LS MRF247 MRF21180 SPSSG1009/D MBC13720 MBC13916 MRF1535T1 MRF1550T1 MRF373A
Abstract: 375F STYLE 1 (NI-650) CASE 458C STYLE 1 (NI-200Z) CASE 465C STYLE 1 (NI-880S) CASE 375G Motorola
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TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module SG1009Q42004 MRF5S9070NR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 MRF5S9100NBR1
Abstract: Thermal Stability Characterized with Differential Large-Signal Impedance Parameters CASE 375F-04 NI-650 Freescale Semiconductor
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MMM6025 MC13820 MMM6007 NONLINEAR MODEL LDMOS MMM6029 baseband DigRF semiconductor cross index MRF5S9080NB SG1009Q42005 MMM6035 MRF6P3300HR3 MRF6P3300HR5
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