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| Part Number | Manufacturer | Description | ||||||
| 1. |  NESG3031M14 |
NEC Electronics | NPN SiGe high frequency transistor. | 97.16 Kb | 3 Pg. | |||
| 2. | NESG3031M14 |
California Eastern Laboratories / NEC | NPN SiGe HIGH FREQUENCY TRANSISTOR | 494.9 Kb | 9 Pg. | |||
| 3. | NESG3031M14-A |
California Eastern Laboratories / NEC | NPN SiGe HIGH FREQUENCY TRANSISTOR | 494.88 Kb | 9 Pg. | |||
| 4. | NESG3031M14FB |
NEC Electronics | NPN SiGe RF Transistor for Low Noise, High-gain Amplification 4-pin Lead-less Minimold (M14, 1208 Package) | 70.64 Kb | 5 Pg. | |||
| 5. | NESG3031M14FB-T3 |
NEC Electronics | NPN SiGe RF Transistor for Low Noise, High-gain Amplification 4-pin Lead-less Minimold (M14, 1208 Package) | 70.64 Kb | 5 Pg. | |||
| 6. | NESG3031M14-T3 |
NEC Electronics | NPN SiGe high frequency transistor. | 97.16 Kb | 3 Pg. | |||
| 7. | NESG3031M14-T3-A |
California Eastern Laboratories / NEC | NPN SiGe HIGH FREQUENCY TRANSISTOR | 494.89 Kb | 9 Pg. |
| « Previous 1 Next » |
| 1. |  97.15 Kb • 3 Pages |
Abstract: ... NESG3031M14 50 pcs (Non reel) • 8 mm wide embossed taping. NESG3031M14-T3 10 kpcs/reel • Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape. Remark To order evaluation samples ... Labels: NESG3031M14 |
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| 2. |  70.64 Kb • 5 Pages |
Abstract: ... NESG3031M14. NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) Document No. PU10415EJ01V0DS (1st edition) Date Published November ... Labels: NESG3031M14 |
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| 3. |  494.9 Kb • 9 Pages |
Abstract: ... HIGH FREQUENCY TRANSISTOR NESG3031M14. FEATURES. • THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE, HIGH-GAIN AMPLIFICATION: NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz. NF = 1.1 dB TYP ... Labels: NESG3031M14, RoHS, Pb-Free |
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