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NESG2101M05-A California Eastern Laboratories (CEL) TRANS NPN 2GHZ M05 visit Digikey Buy

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Part : NESG2101M05-A Supplier : California Eastern Laboratories Manufacturer : Future Electronics Stock : - Best Price : $0.6450 Price Each : $0.6850
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NESG2101M05 Datasheet

Part Manufacturer Description PDF Type
NESG2101M05 NEC NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR Original
NESG2101M05-A Renesas Technology RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 2GHZ M05 Original
NESG2101M05-EVPW24 Renesas Technology RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NESG2101M05 2.4GHZ Original
NESG2101M05-EVPW24-A Renesas Technology RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NESG2101M05 Original
NESG2101M05FB NEC NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (m05) Original
NESG2101M05FB-T1 NEC NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (m05) Original
NESG2101M05-T1 NEC NPN SiGe high frequency transistor. Original
NESG2101M05-T1-A California Eastern Laboratories NPN SiGe HIGH FREQUENCY TRANSISTOR Original

NESG2101M05

Catalog Datasheet MFG & Type PDF Document Tags

transistor T1J

Abstract: NESG2101M05-T1 = 5.0 V 4 M05 NESG2101M05 50 8 mm NESG2101M05-T1 3 k / 3 4 , NPN RF NPN Silicon Germanium RF Transistor NESG2101M05 NPN SiGe RF 125 mW 4 M05 PO , Compound Semiconductor Devices 2002, 2003 NESG2101M05 TA = 25°C ° MIN. TYP. MAX , FB 130260 PU10190JJ02V0DS NESG2101M05 TA = 25°C ° vs. 700 vs. 1.0 (38 × 38 , 0.6 0.7 0.8 0.9 1.0 VBE (V) PU10190JJ02V0DS 3 NESG2101M05 vs. 100 90
NEC
Original
transistor T1J RF transistor L044-435-1588 X044-435-1579 X044-435-1918

transistor T1J

Abstract: bjt npn substrate NESG2101M05-T1 3 kpcs/reel · Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of , NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · · · · · HIGH BREAKDOWN VOLTAGE , DESCRIPTION NEC's NESG2101M05 is fabricated using NEC's high voltage Silicon Germanium process (UHS2-HV), and , P1dB GL NF Ga NF Ga MSG |S21E| fT Cre ICBO DC IEBO hFE Notes: 2 NESG2101M05 M05 UNITS dBm dB dB dB , measurement, pulse width 350 s, duty cycle 2 %. California Eastern Laboratories NESG2101M05 ABSOLUTE
California Eastern Laboratories
Original
bjt npn NEC 9319

transistor T1J

Abstract: NESG2101M05-A Number NESG2101M05-A NESG2101M05-T1-A Quantity 50 pcs (Non reel) 3 kpcs/reel · 8 mm wide embossed taping , NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER , . NESG2101M05 ELECTRICAL CHARACTERISTICS (T A = +25C) Parameter DC Characteristics Collector Cut-off Current , PU10190EJ02V0DS NESG2101M05 TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified) Data Sheet PU10190EJ02V0DS 3 NESG2101M05 4 Data Sheet PU10190EJ02V0DS NESG2101M05 Data Sheet
California Eastern Laboratories
Original
M05 MARKING transistor T1J 4pin

transistor T1J

Abstract: NESG2101M05-T1 ORDERING INFORMATION Part Number Quantity Supplying Form NESG2101M05 50 pcs (Non reel) · 8 mm wide embossed taping NESG2101M05-T1 3 kpcs/reel · Pin 3 (Collector), Pin 4 (Emitter) face , DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR , NESG2101M05 ELECTRICAL CHARACTERISTICS (TA = +25°C) ° Parameter Symbol Test Conditions MIN. TYP , Value 2 FB 130 to 260 Data Sheet PU10190EJ02V0DS NESG2101M05 TYPICAL CHARACTERISTICS
NEC
Original

transistor gl 1117

Abstract: NEC NESG2101M05 INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NESG2101M05-T1 3 kpcs/reel · Pin 3 (Collector), Pin , NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · HIGH BREAKDOWN VOLTAGE SiGe , RF performance M05 DESCRIPTION NEC's NESG2101M05 is fabricated using NEC s high voltage , Compression Point VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz NESG2101M05 M05 UNITS MIN dBm TYP 21 , NESG2101M05 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) THERMAL RESISTANCE SYMBOLS PARAMETERS UNITS
California Eastern Laboratories
Original
transistor gl 1117 NEC NESG2101M05 1GP20 IC 7408 re 10019 S21E

transistor T1J

Abstract: NESG2101M05-T1 INFORMATION Part Number Quantity Supplying Form NESG2101M05 50 pcs (Non reel) · 8 mm wide embossed taping NESG2101M05-T1 3 kpcs/reel · Pin 3 (Collector), Pin 4 (Emitter) face the , . DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM , NESG2101M05 ELECTRICAL CHARACTERISTICS (TA = +25°C) ° Parameter Symbol Test Conditions MIN. TYP , Value 2 FB 130 to 260 Data Sheet PU10190EJ02V0DS NESG2101M05 TYPICAL CHARACTERISTICS
NEC
Original
T1J marking MICROWAVE TRANSISTOR

BF 3027

Abstract: transistor T1J NESG2101M05-T1-A SUPPLYING FORM 3 kpcs/reel · Pin 3 (Collector), Pin 4 (Emitter) face the perforation , NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · HIGH BREAKDOWN VOLTAGE SiGe , RF performance M05 DESCRIPTION NEC's NESG2101M05 is fabricated using NECs high voltage , Compression Point VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz NESG2101M05 M05 UNITS MIN dBm TYP 21 , Laboratories NESG2101M05 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS
California Eastern Laboratories
Original
BF 3027 13444 GA1060 nec 2562 14851 mje 2055

nesg2101m05-t1-a

Abstract: NESG2101M05-A the perforation side of the tape NESG2101M05-T1 NESG2101M05-T1-A Remark To order evaluation , -pin thin-type super minimold (M05) package ORDERING INFORMATION Part Number NESG2101M05 Order Number NESG2101M05-A Package Flat-lead 4-pin thin-type supper minimold (M05, 2012 PKG) (Pb-Free) Quantity 50 pcs (Non , A Business Partner of Renesas Electronics Corporation. NESG2101M05 NPN SiGe RF Transistor for , Renesas Electronics Corporation. NESG2101M05 ELECTRICAL CHARACTERISTICS (TA = +25° C
Renesas Technology
Original
R09DS0036EJ0300

transistor T1J

Abstract: T1J marking ORDERING INFORMATION Part Number NESG2101M05 NESG2101M05-T1 Quantity 50 pcs (Non reel) 3 kpcs/reel , PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF , Compound Semiconductor Devices 2002 NESG2101M05 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC , 130 to 260 2 Preliminary Data Sheet PU10190EJ01V0DS NESG2101M05 PACKAGE DIMENSIONS , NESG2101M05 · The information in this document is current as of November, 2002. The information is subject
NEC
Original
Abstract: NESG2101M05-T1 NESG2101M05-T1-A Remark To order evaluation samples, please contact your nearby sales office , > ORDERING INFORMATION Part Number NESG2101M05 Order Number NESG2101M05-A Package Flat-lead 4-pin thin-type , Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW , , 2012 Page 1 of 13 NESG2101M05 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC , 20, 2012 Page 2 of 13 NESG2101M05 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise Renesas Electronics
Original
Abstract: (M05) package ORDERING INFORMATION Part Number NESG2101M05 Order Number Package NESG2101M05-A NESG2101M05-T1 NESG2101M05-T1-A Remark Flat-lead 4-pin thin-type supper minimold (M05 , Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW , , 2012 Page 1 of 13 NESG2101M05 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC , T1J 130 to 260 R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 2 of 13 NESG2101M05 TYPICAL Renesas Electronics
Original

ic isl 887

Abstract: 2SC5508 NESG4030M14 NESG2101M05/M16 SiGe HBT PA PA PA901TU SiGe HBT SiGe HBT 17 900 , D/CAGC 20 IF Si Tr. 56 V NESG2101M05/M16 NESG210719 NESG210833 NESG220033/34 , ) 2SC5754(NE664M04) NESG2101M05 NE552R479A SW SPDT PG2179TB PG2030TK PG2406T6R - - - - , 2SC5288 2SC5289 2SC5754 NESG2101M05 NE552R479A µPG2318T5N BPF µPC8181TB µPC8182TB H , Tr. NESG3031M05 NESG4030M14 NESG2101M05 SiGe HBT SiGe HBT 34 1 5
Renesas Electronics
Original
2SC5508 NESG2031M05 ic isl 887 NE3514 SW SPDT NE3515S02 PG2179 NE662M04 NESG2031M16 NE55410GR NEM090303M-28

NESG2101M05

Abstract: NONLINEAR MODEL NESG2101M05 CCBPKG SCHEMATIC CCB LCPKG LBPKG Base LB Q1 CCE Collector LE CCEPKG LEPKG CBEPKG Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 3.64e-15 309.7 1.079 56 233.9 11.67e-15 1.648 20.01 1.080 2.782 54.57e-3 1.024e-18 1.35 1.6 2.2 0.05 1e-4 4.8 1.461e-12 0.798 0.137 , CCEPKG CBEPKG LBPKG LCPKG LEPKG NESG2101M05 0.01 pF 0.2 pF 0.16 nH 0.17 nH 0.45 pF 0.02 pF 0.05 pF 0.8 nH
California Eastern Laboratories
Original

2SC5508

Abstract: UPC3243 . NESG2101M05/M16 SiGe HBT PA + Driver PA901TU SiGe HBT Remark The devices listed in the above , NESG2101M05/M16 SiGe HBT NESG210719 Suitable for less than 5-6 V operation NESG210833 Low , ), 2SC5289(NE69039) - PA Medium Output Power Use Tr. 2SC5754(NE664M04) NESG2101M05 NE552R479A , 2SC5754 NESG2101M05 NE552R479A µPG2318T5N BPF Driver Amplifier µPC8181TB µPC8182TB H , NESG3031M05 Feature SiGe HBT NESG4030M14 PA Discrete Tr. NESG2101M05 SiGe HBT Remark The
Renesas Electronics
Original
UPC3243 transistor 20107 UPC8236 NE3509 NE3517S03 UPC3240 R09CA0001EJ0300

UPC8236

Abstract: 2SC5508 PA Discrete Tr. NESG2101M05/M16 SiGe HBT PA + Driver PA901TU SiGe HBT Remark The , ) Si Tr. Suitable for less than 5-6 V operation Low Distortion, Low Noise NESG2101M05/M16 SiGe , ) NESG2101M05 NE552R479A Medium Output Power (0.4 W) Si LDMOS FET 6-pin Super Minimold 6-pin Lead-less , /Q Modulator I(TX) from B/B BPF Power Amplifier 2SC5288 2SC5289 2SC5754 NESG2101M05 , . Type Name NESG3031M05 Feature SiGe HBT NESG4030M14 PA Discrete Tr. NESG2101M05 SiGe
NEC
Original
NE3512S02 digital tv tuner hjfet NESG240033 ANTENNA parabolic antenna for microwave CATV materials PX10020EJ39V0PF G0706

mobile phone basic block diagram

Abstract: PG2158T5K PA Discrete Tr. NESG2101M05/M16 SiGe HBT PA + Driver PA901TU SiGe HBT Remark The , Distortion, Low Noise NESG2101M05/M16 SiGe HBT NESG210719 Suitable for less than 5-6 V operation , Use Tr. 2SC5754(NE664M04) NESG2101M05 NE552R479A Medium Output Power (0.4 W) Si LDMOS FET 6 , NESG2101M05 NE552R479A µPG2318T5N 36 Oscillator 2SC5801 VCO SPDT Switch µPG2030TK , Discrete Tr. NESG2101M05 SiGe HBT Remark The devices listed in the above table are merely examples
NEC
Original
mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 NE5510279A microwave Duplexer UPG2156 PX10020EJ41V0PF

UPC8236

Abstract: 2SC5508 PA Discrete Tr. NESG2101M05/M16 SiGe HBT PA + Driver PA901TU SiGe HBT Remark The , for less than 5-6 V operation Low Distortion, Low Noise NESG2101M05/M16 SiGe HBT NESG210719 , ), 2SC5289(NE69039) - PA Medium Output Power Use Tr. 2SC5754(NE664M04) NESG2101M05 NE552R479A , Amplifier 2SC5288 2SC5289 2SC5754 NESG2101M05 NE552R479A µPG2318T5N BPF Driver Amplifier , Tr. Type Name NESG3031M05 Feature SiGe HBT NESG4030M14 PA Discrete Tr. NESG2101M05
Renesas Electronics
Original
upg2406t6r CATV MODULATOR Microwave GaAs FET catalogue UPG2406T UPC3240tb UPC3242TB R09CA0001EJ0100 PX10020EJ42V0PF

SMD transistor M05

Abstract: smd TRANSISTOR code m05 : 32 dBm POUT typ 4 NESG2101M05 120 mW SiGe Bipolar Transistor Driver 4 4 4 4 4 4 4 4 4 , NE3508M04 NESG2101M05 NESG2031M05 NESG3031M05 NESG3032M14 NE662M04 NE3508M04 NESG2101M05 WLAN , NESG3031M05 NESG3032M14 NESG3033M14 - NESG2031M05 NESG2101M05 NESG3031M05 NESG4030M14 NESG2031M05 NESG2101M05 NESG3031M05 NESG4030M14 - DAB and 1.4 ­ 2.35 GHz Satellite Radio , SiGe Transistor 0.8 @ 2.0 GHz 17 @ 2.0 GHz +13 M05 NESG2101M05 SiGe Transistor
California Eastern Laboratories
Original
SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd 10/2M

mosfet dimmer

Abstract: igbt dimmer 1 COFDMDVB-T LNA DVB ARIB IF NE461M02 NESG2101M05 PC2748TB PC3237TK , EMMA2TS TV RAM 1 LSI 2SC5337 Si Bip. Tr. NE461M02 NESG2101M05 PC2748TB PC3237TK
NEC
Original
PD35502 mosfet dimmer igbt dimmer EMMA3TL emma3 EMMA2 NEC emma X19512JJ2V2PF V850E/IG3 V850ES/IE2 V850ES/IK1 V850E/IF3 78K0R/I

SMD M05 sot23

Abstract: A3 smd sot-343 NE5520279A NESG2101M05 2.4 GHz Choose LDMOS FET: 32dBm POUT typ Single or Multi Throw RFIC Switches , NE3508M04 NESG2101M05 NESG2031M05 NESG3031M05 NESG7030M04 NESG3032M14 NE662M04 Satellite Radio and , 5 â'" 6 GHz NESG7030M04 NESG7030M04 NE3508M04 NESG2101M05 LNA Performance (see Data , 2.0 GHz 17 @ 2.0 GHz +13 M05 NESG2101M05 SiGe Transistor 0.9 @ 2.0 GHz 13 @ 2.0 , 1 30 6 100 23 15 120 600 34 Pkg: 4 pin SOT-89 style NESG2101M05
California Eastern Laboratories
Original
SMD M05 sot23 A3 smd sot-343 nE352 NE5531 2013/4M

NE5510279A

Abstract: uPB1512TU GHz NE34018 2nd stage; NF 0.3 dB; Ga 16 dB @ f 2.4 GHz NESG2101M05 3rd stage; NF 0.3 dB , 25 21.5 13 0.8 5 2 NESG2101M05 50 17 17.0 21.5 0.9 10 2
NEC
Original
NE350184C NE4210S01 NE3503M04 uPB1512TU dvbt diagram PMR446 5.8 ghz Transceiver IC NE3504S02 NE3210S01 NE52418
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