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| Part Number | Manufacturer | Description | |||||
| 1. |  NESG2101M05 |
NEC Electronics | NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR | 168.46 Kb | 14 Pg. | ||
| 2. | NESG2101M05FB |
NEC Electronics | NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (m05) | 97.6 Kb | 15 Pg. | ||
| 3. | NESG2101M05FB-T1 |
NEC Electronics | NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (m05) | 97.6 Kb | 15 Pg. | ||
| 4. | NESG2101M05-T1 |
NEC Electronics | NPN SiGe high frequency transistor. | 168.46 Kb | 14 Pg. | ||
| 5. | NESG2101M05-T1-A |
California Eastern Laboratories / NEC | NPN SiGe HIGH FREQUENCY TRANSISTOR | 405.78 Kb | 15 Pg. |
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| 1. |  97.6 Kb • 15 Pages |
Abstract: ... NESG2101M05. NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) Document No. PU10190EJ02V0DS (2nd edition) Date Published ... Labels: NESG2101M05 |
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| 2. |  168.45 Kb • 14 Pages |
Abstract: ... DESCRIPTION NEC's NESG2101M05 is fabricated using NEC� s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifi ers, medium ... Labels: NESG2101M05 |
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| 3. |  405.8 Kb • 15 Pages |
Abstract: ... DESCRIPTION NEC's NESG2101M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium ... Labels: NESG2101M05, RoHS, Pb-Free |
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| 4. |  344.27 Kb • 41 Pages |
Abstract: ... LNA NESG2021M05 NESG2031M05 NESG2101M05. Selection Guide PX10020EJ08V0PF 38. 5 GHz Wireless LAN. RF Front-end Basics. Base Band Processor. fRF. in. out. SW. LNA. PA. D/C. VCO. U/C. DEMOD. PLL. MOD. Rx. Tx. Recommended ... Labels: NESG2101M05 |
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