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Part Manufacturer Description Datasheet BUY
NE85633-A California Eastern Laboratories (CEL) RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEAD FREE, MINIMOLD PACKAGE-3 visit Digikey Buy
NE85633-T1B-A California Eastern Laboratories (CEL) RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEAD FREE, MINIMOLD PACKAGE-3 visit Digikey Buy
NE85630-A California Eastern Laboratories (CEL) Bipolar Transistors NPN High Frequency visit Digikey Buy
NE85634-T1-A California Eastern Laboratories (CEL) TRANSISTOR NPN 1GHZ SOT-89 visit Digikey Buy
NE85633-R24-A California Eastern Laboratories (CEL) Bipolar Transistors NPN High Frequency visit Digikey Buy
NE85630-R25-A California Eastern Laboratories (CEL) TRANSISTOR NPN 1GHZ SOT-323 visit Digikey Buy

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Part : NE85633-T1B-R25-A Supplier : California Eastern Laboratories Manufacturer : Chip1Stop Stock : 4 Best Price : $0.6190 Price Each : $0.6190
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Part : NE85639-T1-A Supplier : California Eastern Laboratories Manufacturer : Chip1Stop Stock : 18,000 Best Price : $0.9753 Price Each : $0.9753
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Part : NE856M02-T1-AZ Supplier : California Eastern Laboratories Manufacturer : Chip1Stop Stock : 1,937 Best Price : $1.5499 Price Each : $1.5499
Part : NE856M02-T1-AZ Supplier : California Eastern Laboratories Manufacturer : Chip1Stop Stock : 1,000 Best Price : $1.3884 Price Each : $1.3884
Part : NE85633 Supplier : NEC Manufacturer : New Advantage Stock : 44 Best Price : - Price Each : -
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NE856 Datasheet

Part Manufacturer Description PDF Type
NE856 NEC NECs NPN SILICON HIGH FREQUENCY TRANSISTOR Original
NE85600 California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original
NE85600 NEC NPN silicon high frequency transistor. Original
NE85600 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original
NE85600 California Eastern Laboratories UHF/Microwave NPN BJT Scan
NE85600 NEC 7 GHz, 30 V, NPN silicon high frequency transistor Scan
NE85618 NEC NECs NPN SILICON HIGH FREQUENCY TRANSISTOR Original
NE85618 NEC Semiconductor Selection Guide Original
NE85618-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-343 Original
NE85618-T1 NEC NPN silicon high frequency transistor. Original
NE85618-T1 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original
NE85618-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-343 Original
NE85619 NEC Semiconductor Selection Guide Original
NE85619 NEC NECs NPN SILICON HIGH FREQUENCY TRANSISTOR Original
NE85619-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ MINIMOLD Original
NE85619-T1 California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 1GHZ SMD Original
NE85619-T1 NEC NPN silicon high frequency transistor. Original
NE85619-T1 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original
NE85619-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SMD Original
NE85630 NEC Semiconductor Selection Guide Original
Showing first 20 results.

NE856

Catalog Datasheet MFG & Type PDF Document Tags

UPA827TF

Abstract: UPA833TF NE85635 T O -9 2 NE02132 NE85632 NE02100 NE68000 NE68100 NE68800 NE85600 NE02107 NE696M01 NE698M01 , D D D D D D D D D D D D D D D D D D D D D D D 0 D D NE680 NE856 NE681 NE685 NE686 NE687 NE688 NE856 NE680 NE681 NE688 NE856 NE685 NE686 NE687 NE856 NE681 NE856 NE685 NE688 NE685 NE681 NE856 NE685 NE856
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UPA802T UPA827TF UPA831TF UPA833TF sot-363 dual sot363 UPA800T UPA801T UPA806T UPA807T UPA808T

NE856

Abstract: NE85635 packaging schematic Laboratories NE856 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE85600 NE85618 NE85619 NE85630 NE85632 EIAJ1 REGISTERED NUMBER 2SC5011 2SC5006 2SC4226 2SC3355 PACKAGE OUTLINE 00 (CHIP , and NE85635 is 200°C. TYPICAL PERFORMANCE CURVES (TA = 25°C) NE85632 AND NE85634 TOTAL POWER , NE85634 1.0 0.7 NE85632/ 33 0.5 NE85635 0.3 0.2 200 100 70 50 30 20 10 0.1 , 16 VCE = 10 V 14 NE85633 12 NE85632 10 NE85634 8 6 4 Insertion Gain
California Eastern Laboratories
Original
NE85635 packaging schematic low noise Micro-X marking "K" Transistor BJT 547 b Micro-X Marking 865 NE AND micro-X NEC NE85635 NE85630-T1 NE85634-T1 NE85639-T1 NE85639R-T1

016p

Abstract: NE85633-T1B-A NE856 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE85600 NE85618 NE85619 NE85630 , NE85635 is 200°C. TYPICAL PERFORMANCE CURVES (TA = 25°C) NE85632 AND NE85634 TOTAL POWER DISSIPATION , 5 NE85632 AND NE85634 INTERMODULATION DISTORTION vs. COLLECTOR CURRENT -80 10 NE85633 NE85635 VCE = 10 V IM3 7 -70 VCE = 10 V VO = 100 dBV/50 RG = RL = 50 NE85632 NE85634 , Cutoff Current at VEB = 1 V, IC = 0 mA UNITS NE85633 NE85634 2SC3356 2SC3357 33 34 MIN TYP
California Eastern Laboratories
Original
016p NE85633-T1B-A transistor NEC b 882 p NEC 2501 LE 737 mje 1303 056E-9

BA 5982

Abstract: 0709s (Units in mm) ORDERING INFORMATION PACKAGE OUTLINE 35 (MICRO-X) PART NUMBER NE85600 NE85618-T1 NE85619-T1 NE85630-T1 NE85632 NE85633-T1B NE85634-T1 NE85635 NE85639-T1 . 2.55±0.2 +0.06 QUANTITY 100 , CHARACTERISTICS (T a = 2 5 X ) PART NUMBER NE85600 NE85618 NE85619 NE85630 NE85632 E IA J1 REG ISTER ED NUMBER , f = 2 GHz UNITS GHz dB dB dB dB dB dB NE85633 2SC3356 33 MIN TYP MAX 7.0 1.4 2.0 NE85634 2SC3357 34 MIN TYP 6.5 1.4 MAX NE85635 2SC3603 35 MIN TYP MAX 7.0 NE85639/39R 2SC4093 39 MIN
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BA 5982 0709s 143r 7m 0880 IC ceramic micro-X package transistor NEC D 882 p

56E-18

Abstract: transistor NEC D 882 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fr NE85600 00 (CHIP) NE85618 2SC5011 18 NE85619 2SC5006 19 NE85630 2SC4226 30 NE85632 2SC3355 32 PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP , dB dB dB dB dB dB 50 UA NE85634 2SC3357 34 MIN TYP 6.5 2.0 1.4 MAX MIN NE85635 2SC3603 35 TYP , ) Collector Current, lc(mA) NE856 SERIES TYPICAL PERFORMANCE CURVES (ta =25 c) NE85634 FORWARD INSERTION , ) CollectorCurrent, lc(mA) NE856 SERIES TYPICAL PERFORMANCE CURVES (Ta=25°c) NE85633 FORWARD INSERTION GAIN
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56E-18 transistor NEC D 882 tq55 XO 202 na transistor Bf 966 0107 NA SILICON TRANSISTORS

NE99532

Abstract: 2sc3358 SPECIFICATIONS (Ta = 25°c) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE NE85600 00 (CHIP) NE85632 2SC3355 32 NE85633 2SC3356 33 NE85634 2SC3357 34 NE85635 2SC3603 35 NE85637 2SC3358 37 SYMBOLS , cu = 25°q PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE NE85600 00 (CHIP) NE85632 2SC3355 32 NE85633 2SC3356 33 NE85634 2SC3357 34 NE85635 2SC3603 35 NE85637 2SC3358 37 SYMBOLS , Ambient Temperature, Ta (°C) NE85632 AND NE85634 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
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NEM4203B-20 NE46734 NE99532 NE3005B20 NE4201 NE1010E 2SC3358 transistor ne3005b-20 M4201 NEM4205B-20 T-35- NE32700 NE32702

LB 122 transistor To-92

Abstract: Mje 1532 NE856 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE85600 NE85618 NE85619 NE85630 , NE85635 is 200°C. TYPICAL PERFORMANCE CURVES (TA = 25°C) NE85632 AND NE85634 TOTAL POWER DISSIPATION , 5 NE85632 AND NE85634 INTERMODULATION DISTORTION vs. COLLECTOR CURRENT -80 10 NE85633 NE85635 VCE = 10 V IM3 7 -70 VCE = 10 V VO = 100 dBµV/50 RG = RL = 50 NE85632 NE85634 , Emitter Cutoff Current at VEB = 1 V, IC = 0 mA UNITS NE85633 NE85634 2SC3356 2SC3357 33 34
California Eastern Laboratories
Original
LB 122 transistor To-92 Mje 1532 MICROWAVE TRANSISTOR 32E16 nec 2501 852 epitaxial micro-x

MJE 1532

Abstract: sot-89 Marking LB 931 Laboratories NE856 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE85600 NE85618 NE85619 NE85630 NE85632 EIAJ1 REGISTERED NUMBER 2SC5011 2SC5006 2SC4226 2SC3355 PACKAGE OUTLINE 00 (CHIP , and NE85635 is 200°C. TYPICAL PERFORMANCE CURVES (TA = 25°C) NE85632 AND NE85634 TOTAL POWER , NE85634 1.0 0.7 NE85632/ 33 0.5 NE85635 0.3 0.2 200 100 70 50 30 20 10 0.1 , 16 VCE = 10 V 14 NE85633 12 NE85632 10 NE85634 8 6 4 Insertion Gain
California Eastern Laboratories
Original
sot-89 Marking LB 931 transistor bf 760 nec 2035 Transistor B 1566 NE85635/CEL OPT500

ne666

Abstract: NEC NE85635 tor the NE856C0 * xJ NE85635 > «20CTC TYPICAL PERFORMANCE CURVES (Ta= 25X) NE85633 A N O NE86635 T , N E 85618 NE66619 NE85630 NE85632 2 S C 422 G 2SC5006 2SC33&S 2SC5011 30 32 00 (CHIP) 18 19 SYM BOLS , METALLIZATION · LOW COST CO (C H IP ) NE856 SERIES 3 5 (M IC R O -X ) DESCRIPTION Tbo NE856 series ot , linearity. The NE856 series oilers excellent performance and rottabibty at low cost. This is achieved b y , process. The NE856 sorie« rs avadablo in chip form and a Micro-x package foe high frequency applications
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ne666 ka13 85618 NEB5600 UPA810T NE35600 UPA401T UPA810 2SC501 NE8S632

2sc3357

Abstract: 973-120 NE85600 NE85618 NE85619 NE85630 NE85632 EIAJ1 REGISTERED NUMBER 2SC5011 2SC5006 2SC4226 2SC3355 , NE85600 and NE85635 is 200°C. TYPICAL PERFORMANCE CURVES (TA = 25°C) NE85632 AND NE85634 TOTAL POWER , NE85634 1.0 0.7 NE85632/ 33 0.5 NE85635 0.3 0.2 200 100 70 50 30 20 10 0.1 , 16 VCE = 10 V 14 NE85633 12 NE85632 10 NE85634 8 6 4 Insertion Gain , dB dB 11.5 NE85635 NE85639/39R 2SC3603 2SC4093 35 39 MIN TYP MAX MIN TYP MAX 6.5 2.0
California Eastern Laboratories
Original
973-120 marking K "micro x" NEC C 324 C transistor marking 551 sot-89 transistor m 1104

transistor NEC D 882 p

Abstract: Transistor BF 479 : 1. Embossed tape 12 mm wide. ORDERING INFORMATION (Pb-Free) PART NUMBER NE85600-A NE85618-T1-A NE85619-T1-A NE85630-T1-A NE85632-A NE85633-T1B-A NE85634-T1-A NE85635-A NE85639-T1-A NE85639R-T1-A QUANTITY , (Solder Contains Lead) PART NUMBER NE85600 NE85618-T1 NE85619-T1 NE85630-T1 NE85632 NE85633-T1B NE85634-T1 NE85635 NE85639-T1 NE85639R-T1 QUANTITY 100 3000 3000 3000 1 3000 1000 1 3000 3000 PACKAGING , Product, fT (GHz) VCE = 10 V 7 NE85633 NE85635 IM3 -70 5 NE85632 NE85634 IM2, IM3 (dB
California Eastern Laboratories
Original
Transistor BF 479 transistor c 1349

NEC NE85635

Abstract: 2SC3356 to 92 NE85600 00 (CHIP) NE85632 2SC3355 32 NE85633 2SC3356 33 NE85634 2SC3357 34 NE85635 2SC3603 35 , NUMBER PACKAGE OUTLINE NE85600 00 (CHIP) NE85632 2SC3355 32 NE85633 2SC3356 33 NE85634 2SC3357 34 , 150 Ambient Temperature, Ta (°C) 200 E. £ w a § a. I NE85632 AND NE85634 TOTAL POWER , NE856 SERIES FEATURES â'¢ HIGH GAIN BANDWIDTH PRODUCT: fr = 7 GHz â'¢ LOW NOISE FIGURE: 1.1 dB at 1 GHz â'¢ HIGH COLLECTOR CURRENT: 100 mA â'¢ LOW COST DESCRIPTION AND APPLICATIONS The NE856 series
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2SC3356 to 92 NEC 2501 MF 216 NE85834 TRANSISTOR NEC B77 sot23 41 1AMIL

NE8563S

Abstract: E8560 LS fT < t * = 2 5 -c ) N E85600 00 (C H IP ) NE85618 2SC5011 18 NE85619 2S C 5006 19 NE85630 2S C , 0.55 MIN TYP 7.0 1.4 2.0 MAX MIN NE85634 2SC 3357 34 TYP 6.5 1.4 M AX MIN NE8563S 2SC3603 35 TY P , (mA) 3-156 NE856 SERIES TYPICAL PERFORMANCE CURVES , 177 -141 -118 -92 009 0.15 0.52 0.67 0.70 3-158 NE856 SERIES NE85632 TYPICAL NOISE PARAMETERS , 2.8 3-162 NE856 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS (Ta zs-q NE85630 VCE =
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E8560 SL 0380 R 2SC 2625 transistor 321 CJ 7121 NE85634-F transistor NEC D 586

2sc3355

Abstract: 2SC3357 NUMBER PACKAGE OUTLINE NE85600 NE85618 2SC5011 18 NE85619 2SC5006 19 NE85630 2SC4226 30 NE85632 2SC3355 , NE85600 NE85618 2SC5011 18 NE85619 2SC5006 19 NE85630 2SC4226 30 NE85632 2SC3355 32 dB dB , °C/W 0.65 NE85633 NE85634 2SC3356 2SC3357 33 34 MIN TYP MAX MIN TYP MAX 7.0 1.4 2.0 6.5 1.4 2.1 9 10 , °C/W 0.65 NE85633 NE85634 2SC3356 2SC3357 33 34 MIN TYP MAX MIN TYP MAX 7.0 1.4 2.0 6.5 1.4 2.1 9 10 , result in permanent damage. 2 Maximum Tj for the NE85600 and NE85635 is 200°C. TYPICAL PERFORMANCE
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BJT BF 331

Abstract: 016p NE856 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE85600 NE85618 NE85619 NE85630 , 0.3 Frequency, f (GHz) 2 5 10 -80 NE85633 NE85635 VCE = 10 V 1 NE85632 AND , 10 V 14 NE85633 12 NE85632 10 NE85634 8 6 4 Insertion Gain, |S21E|2 (dB , Emitter Cutoff Current at VEB = 1 V, IC = 0 mA UNITS NE85633 NE85634 2SC3356 2SC3357 33 34 , NE85635 is 200°C. TYPICAL PERFORMANCE CURVES (TA = 25°C) NE85633 AND NE85635 TOTAL POWER DISSIPATION
California Eastern Laboratories
Original
BJT BF 331 marking Kf SOT-89 6E16 marking 855 sot 353 Sot-23 MARKING 702

NE46734

Abstract: NE681 Small Signal Bipolar Transistor Performance Guide Optimum Noise Figure, NFOPT (dB) NE734 NE856 NE685 NE021 NE734 NE685 NE681 NE021 NE681 NE856 NE680 3.0 NE680 2.0 1.0 0 0.1 0.2 0.5 1.0 2.0 5.0 10.0 Gain at Optimum Noise Figure, GA (dB , 26.7 NE46134 10 V, 50 mA, P1dB = 24.4 NE46134 10 V, 30 mA, P1dB = 22.2 NE46134 30 NE85634 NE46734 25 34 56 E8 N 20 34 67 E4 N 15 4 13 46 NE NE85634 10 NE46734
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1817 transistor
Abstract: UTUNE SYMBOLS fT NF Ga |S21E|2 hFE NE85600 NE85618 2SC5011 18 00 (CHIP) NE85619 2SC5006 19 NE85630 2SC4226 30 NE85632 2SC3355 32 PARAMETERS AND CONDITIONS UNITS , . Maximum T j for the NE85600 and NE85635 is 200°C. TYPICAL PERFORMANCE CURVES (T a = 25° c ) NE85633 AN D N E85635 TOTAL POWER DISSIPATION vs. AMBIENTTEMPERATURE NE85632 AND NE85634 TOTAL POWER , 1.4 dB dB MIN 11.5 TYP NE85635 2SC3603 35 MAX MIN TYP NE85639/39R -
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L4E7525 42752S 00LS752 4E7525 00LS7S3

uPA63

Abstract: UPA827TF - 3-8 3-50 3-70 3-193 NE02132 NE85632 NE02100 NE68000 NE68100 NE68800 NE85600 NE02107 NE696M01 , NE68530 NE68630 NE68730 NE68830 NE85630 NE02133 NE68033 NE68133 NE68533 NE68633 NE68733 NE68833 NE85633 , Screening Page Number NE46100 NE46134 NE461M02 NE663M04 NE85634 NE856M02 2.0 1.0 1.0 2.0 1.0 1.0 , D D D D D D D D D D NE680 NE856 NE681 NE685 NE686 NE687 NE688 NE856 NE680 NE681 NE688 NE856 NE685 NE686 NE687 NE856 NE681 NE856 NE685 NE688 NE685 NE681 NE856 NE685 NE856 NE685 NE688 3-235 3-238 3-243
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uPA63 UPA809T URA810T UPA811T UPA812T UPA814T UPA821TF

NE88933

Abstract: ne85639 14 8 20 1.0 15 9.0 8 20 50 100 250 10 65 0.20 NE856 NE85630 3 7 10 12 3 7 1 0 90 45 3 5 40 110 250 12 100 015 150 NE85633 10 20 1.0 12 10 7 10 16 9 10 20 1.0 115 70 10 20 50 120 300 12 100 0.20 NE85635 10 20 20 12 10 7 20 21 10 10 20 20 90 70 10 20 50 120 300 12 100 0.58 NE85639 10 20 10 15 10 7 , 24 12 10 50 05 12 5 40 10 50 30 100 200 18 150 2 00 NE856 NE85634 10 20 1.0 11 10 40 1.0 1.8 9 10
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NE21935 NE645 NE64535 NE68035 NE68039 NE68130 NE88933 NFC46 NE02135 NE683 NE57835 NL68030

8003* transistor

Abstract: transistor DB 12 PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) · SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package · LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz · HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz · EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE HIGH COLLECTOR CURRENT: 100 mA · UPA810T PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 1 6 2 5 3 0.65 4 2.0 ± 0.2 0.2 (All Leads
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UPA810T-T1 8003* transistor transistor DB 12 npn dual emitter RF Transistor S21E

transistor ap 7686

Abstract: transistor d 13009 -PIN THIN-TYPE SMALL MINI MOLD PACKAGE 2 DIFFERENT BUILT-IN TRANSISTORS (Qi: NE856, 02: NE685) 0 .6 ± 0.1 T , -33.11 -35.72 -42.08 -51.14 UPA832TF BUILT-IN TRANSISTORS Q1 3-pin sm all mini mold part No. NE856
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transistor ap 7686 transistor d 13009 ic 7483 ap 6928 PA832TF PA832TF-T1
Showing first 20 results.