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NE68518-T1-A California Eastern Laboratories (CEL) TRANSISTOR NPN 2GHZ SOT343 visit Digikey Buy
NE68518-A California Eastern Laboratories (CEL) TRANSISTOR NPN 2GHZ SOT343 visit Digikey Buy

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NE68518 Datasheet

Part Manufacturer Description PDF Type
NE68518 NEC Semiconductor Selection Guide Original
NE68518 NEC NPN silicon high frequency transistor. Original
NE68518-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT343 Original
NE68518-T1 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original
NE68518-T1 NEC Original
NE68518-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT343 Original
NE68518-T1-A California Eastern Laboratories SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original

NE68518

Catalog Datasheet MFG & Type PDF Document Tags

014e1

Abstract: 0066E NONLINEAR MODEL SCHEMATIC CCBPKG CCB LCX LBX Base LB LC CCE Collector NE68518 Q1 CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7e-16 109 1 15 0.19 7.9e-13 2.19 1 1.08 12.4 Infinity 0 2 1.3 10 8.34 0.009 10 0.4e-12 0.81 0.5 0.18e-12 0.75 Parameters MJC XCJC CJS VJS , LBX LCX LEX NE68518 0.13e-12 0.14e-12 1.55e-9 1.25e-9 0.94e-9 0.066e-12 0.44e-12 0.36e-12 0.18e-9
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Original
014e1 0066E

prime 15005

Abstract: pa 4010 IC . Collector 4 Emitter ORDERING INFORMATION T83 is the Part Number Identifier PART NUMBER NE68518-T1, T2 , ~ 2s°q PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS tr NE68518 2SC5015 18 , ABSOLUTE MAXIMUM RATINGS1(t a PART NUMBER SYMBOLS VCBO VCEO Vebo Ic Tj T stg zs - q NE68518 UNITS V V V , 13.0 2000 1.48 8.2 3000 1.74 5.5 NE685 SERIES TYPICAL PERFORMANCE CURVES NE68518, NE68530 D.C
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OCR Scan
NE68519 prime 15005 pa 4010 IC ne665 T2B SOT23 2SC5010 NE6853Q 2SC4959 NE68533 2SC4955

R47 marking

Abstract: U73-U74 Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 18 2.1 ± 0.2 +0.10 0.3 -0.05 (LEADS 2, 3, 4) 1.25 ± 0.1 2.0 ± 0.2 3 2 0.65 1.3 0.60 1 4 +0.10 0.4 -0.05 MARKING 0.15 0.9 ± 0.1 0 to 0.1 PART NUMBER MARKING NE25118 U71, U72, U73, U74 +0.10 0.15 -0.05 PART NUMBER MARKING NE68618 NE68718 V63, V64 NE68018 R46, R47, R48 NE68118 R36, R37, R38 NE68518 T86
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Original
NE68818 NE34018 NE76118 NE85618 R47 marking U73-U74 marking r37 marking 015 1817 transistor

85500 transistor

Abstract: NPN Transistor 13009 5° 5° 0 to 0.1 NE685 SERIES ORDERING INFORMATION PART NUMBER NE68518-T1-A NE68519-T1-A , 143 STYLE) 39R (SOT 143R STYLE) PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68518 , . NE68518 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT (dB) GA (dB) OPT MAG ANG Rn/50 VCE = , °C) NE68518, NE68530 D.C. POWER DERATING CURVE NE68519 D.C. POWER DERATING CURVE Total Power Dissipation , ° 2 S21 0.1 GHz S12 4 GHz 315° 3 NE68518 VCE = 0.5 V, IC = 0.5 mA FREQUENCY GHz 0.1 0.4 0.8
California Eastern Laboratories
Original
85500 transistor NPN Transistor 13009 transistor d 13009 transistor MJE 13009 k 13009 transistor E 13009 8539R NE68539/39R 2SC4957 NE68530-T1-A NE68533-T1-A NE68539-T1-A

cce 7100

Abstract: 85500 transistor . Emitter 4. Base EXCLUSIVE NORTH AMERICAN AGENT FOR PART NUMBER NE68518-T1 NE68519-T1 NE68530-T1 , CHARACTERISTICS (TA = 25°C) PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68518 2SC5015 18 , parameters may result in permanent damage. NE68518 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz , Dissipation, PT (mW) Total Power Dissipation, PT (mW) NE68518, NE68530 D.C. POWER DERATING CURVE 200 , SCATTERING PARAMETERS (TA = 25°C) NE68518 VCE = 0.5 V, IC = 0.5 mA FREQUENCY S11 S21 GHz MAG
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Original
cce 7100 cce 7100 1027 704-00/cce 7100 NE68533-T1 NE68539-T1 NE68539R-T1

cce 7100

Abstract: 85500 transistor 1 4 1.0 NE685 SERIES ORDERING INFORMATION PART NUMBER NE68518-T1 NE68519-T1 NE68530-T1 , EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68518 2SC5015 18 NE68519 2SC5010 19 NE68530 , . NE68518 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT (dB) GA (dB) MAG ANG Rn , ) NE68518, NE68530 D.C. POWER DERATING CURVE 200 180 INFINITE HEAT SINK FREE AIR 100 0 200 , -1.5 270° NE68518 VCE = 0.5 V, IC = 0.5 mA FREQUENCY 315° (VCE = 2.5 V, IC = 1 mA) S11
NEC
Original
cce 7100 0913 br 8764 539r P 13009 0803 BF109 P 13009 0708

HE 85500

Abstract: st 85500 r ORDERING INFORMATION PART NUMBER NE68518-T1 NE68519-T1 Note: 1. Lead material: Cu Lead plating , =25»o PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NE68518 2SC5015 18 NE68519 , these parameters may result in permanent damage. NE68518 TYPICAL NOISE PARAMETERS FREQ. (MHz) N F , 0.26 0.22 3-94 NE685 SERIES TYPICAL PERFORMANCE CURVES NE68518, NE68530 D.C. POWER DERATING , °c) 180' Coordinates in Ohms Frequency in GHz (Vce = 2.5 V, Ic = 1 mA) 270' NE68518 VCE = 0.5 V, Ic
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OCR Scan
HE 85500 st 85500 EN 123400 ha 14052 HE 85500 TRANSISTOR bf 0252

014e1

Abstract: cce 7100 1.0 ORDERING INFORMATION * 0 to 01 PART NUMBER NE68518-T1 NE68519-T1 N E68530-T1 Note: 1. Lead , BER PACKAGE OUTLINE SYMBOLS fr N F min G nf NE68518 2SC5015 18 NE68519 2SC5010 19 NE68530 , Note: 1.Operation in excess of any one of these parameters may result in permanent damage. NE68518 , 0.22 NE685 SERIES TYPICAL PERFORMANCE CURVES NE68518, NE68530 D.C. POWER DERATING CURVE (t a = 25 , PARAMETERS (T a = 25°c ) Coordinates in Ohms Frequency in GHz (Vce = 2.5 V, lc = 1 mA) 270" NE68518 V
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OCR Scan
CD 5888 cb ic transistor j 13009 CD 5888 CB

cce 7100

Abstract: transistor d 13009 1 4 1.0 NE685 SERIES ORDERING INFORMATION PART NUMBER NE68518-T1-A NE68519-T1-A , 25°C) PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68518 2SC5015 18 NE68519 , . NE68518 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT (dB) GA (dB) MAG ANG Rn , ) NE68518, NE68530 D.C. POWER DERATING CURVE 200 180 INFINITE HEAT SINK FREE AIR 100 0 200 , -1.5 270° NE68518 VCE = 0.5 V, IC = 0.5 mA FREQUENCY 315° (VCE = 2.5 V, IC = 1 mA) S11
California Eastern Laboratories
Original
BJT BF 331 tr 13009 TRANSISTOR Bf 522

NE68018

Abstract: SURFACE MOUNT PLASTIC NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 NE68019 NE68119 NE68519
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OCR Scan
NE68619 NE68719 NE68819 NE85619 NE02130 NE68030

NE68019

Abstract: NE68839 Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications - " VCE (V) lc (m A) , ft. -.H r* TYP (dB) ,-fc « Wf, 10.0 9.0 12.0 15 13 10 6.5 & 100 100 110 100 100 120 120 35 65 30 10 30 100 100 MAX 4 PIN SUPER MINI MOLD NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 1.0 1.0 2.0 2.0 2.0 2.0 1.0 1 2.5 2.5 1 1 3 2.5 SOT-343 STYLE 1 3 3 3 3 7 3 1.5 1.1 1.5 1.5 1.3 1.5 1.4 12.0 13.0 8.5 g 8 8 11.0 1.0 2.5 2.5 1 1 3 2.5 1 3 3 3 3 3 3 12.5 16.0 12.0 13 11 9
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OCR Scan
NE68839 NE68630 NE68730 NE68830 NE68633 NE68733 NE68833

cce 7100

Abstract: 85500 transistor PART NUMBER NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 QUANTITY 3000 , . ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68518 , these parameters may result in permanent damage. NE68518 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ , (mW) Total Power Dissipation, PT (mW) NE68518, NE68530 D.C. POWER DERATING CURVE 200 180 , -.6 -.8 -1 225° 3 -1.5 270° NE68518 VCE = 0.5 V, IC = 0.5 mA FREQUENCY 315
NEC
Original
0-834-10 BJT BF 167 BJT IC Vce

ic isl 887

Abstract: 2SC5508 Tr. 2SC5015 (NE68518) 2SC5185 (NE68718) etc. 2SC5369 (NE696M01) PC8112TB DEMOD , SiGe HBT - - 2SC5004(NE58219) 2SC5011(NE85618) 2SC5801(NE851M13) 2SC5015(NE68518) 2SC5185
Renesas Electronics
Original
2SC5508 NESG2031M05 ic isl 887 NE3514 SW SPDT NE3515S02 PG2179 NE662M04 NESG2031M16 NE55410GR NEM090303M-28

X13769XJ2V0CD00

Abstract: 2SC4703 µ PC2795GV I 0° 90° LPF Q LPF Tr. 2SC5015 (NE68518) AGCIC µ PC2782GR PLL I/Q µ
NEC
Original
X13769XJ2V0CD00 NE3210S01 PC2709TB PC2781GR 2SC4703 PC1099 2SC470-3 PC1891A R78K0 PD78064Y 780308Y PD780205 PD7500 PD78064

sot 326

Abstract: NE02139 Low Noise Bipolar Transistors Ì I TEST Part ' *- i NHG* Vcc M SURFACE MOUNT PLASTIC NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 NE68019 NE68119 NE68519 NE68619 NE68719 NE68819 NE85619 NE02130 NE68030 NE68130 NE68530 NE68630 NE68730 NE68830 NE85630 NE02133 NE68033 NE68133 NE68533 NE68633 NE68733 NE68833 NE85633 NE97733 NE97833 NE85634 NE02139 NE68039 NE68139 NE68539 NE68639 NE68739 NE68839 NE85639 NE68039R NE68139R NE68539R NE68639R NE68739R NE68839R NE85639R 2.0 1.0 2.0 2.0 2.0 2.0 1.0 2.0 1.0
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OCR Scan
sot 326 338 sot-23

73412

Abstract: NE64535 -92) 32 32 D D 3-11 3-157 SURFACE MOUNT PLASTIC NE68018 NE68118 NE68518 NE85618 NE68019 NE68119 , PIN SUPER MINI MOLD NE68018 NE68118 NE68518 NE85618 1 2.5 2.5 2.5 SOT- 343 STYLE 1 3 3 3 1.5 1.1
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OCR Scan
NE02135 NE64535 73412 CHIP transistor 348 Transistor 120 NE24318 NE46134 NE46734 NE02100 NE21900 NE578001 NE645001

uPA63

Abstract: UPA827TF Description Pkg. Cotte Screening Pag« Number SURFACE MOUNT PLASTIC NE68Q18 NE68118 NE68518 NE68618 , NE68118 NE68518 NE68618 NE68718 NE68818 NE8S618 NE6801S NE68119 NE68519 NE68619 NË68719 NE68819 NE85619
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OCR Scan
UPA827TF UPA831TF uPA63 UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 NE68539E NE68518 NE678M04 12.0 NE68533 NE68530 NE68519 NE685M03 14.0 14.5 15.0 , .9 NE68518 9 6 2.0 150 3 10 65 175 12.0 3 10 2.0 11 3 3 2.0
NEC
Original
marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd P14740 P14740EE5V0PF00

nec b1007

Abstract: T79 code marking NE58219 NE68718 NE38018 T83 NE68618 V63, V64 R36, R37, R38 NE68518 NE34018 30
California Eastern Laboratories
Original
NE02107 C3206G nec b1007 T79 code marking C3206 marking s16 marking code C1H C3H marking NE680 UPC2798GR C2798G UPC2726T UPC3206GR

814T

Abstract: NE68018 NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 1.0 1.0 2.0 2.0 2.0 2.0 1.0 1 2.5 2.5 1 1 3 2.5
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OCR Scan
814T NE46100 NE94430 E944321 NE94433 NE68100 E73412

UPC8236

Abstract: 2SC5508 device list Block LNA Function Discrete Tr. Type Name Feature 2SC5015(NE68518) Si , PLL VCO Oscillator + Buffer 2SC5801(NE851M13) Buffer 2SC5015(NE68518), 2SC5185(NE68718
Renesas Electronics
Original
UPC8236 upg2406t6r 2SC3357/NE85634 CATV MODULATOR Microwave GaAs FET catalogue NE5510279A R09CA0001EJ0100 PX10020EJ42V0PF

mobile phone basic block diagram

Abstract: PG2158T5K Tr. Type Name Feature 2SC5015(NE68518) Si Bipolar Tr. (fT = 12 GHz) 2SC5185(NE68718 , (NE851M13) Buffer 2SC5015(NE68518), 2SC5185(NE68718) Low Current Consumption PC8178TB/TK, PC8179TB
NEC
Original
mobile phone basic block diagram PG2158T5K microwave Duplexer UPG2156 NE3517S03 pc2757tb PX10020EJ41V0PF G0706

UAA 1006

Abstract: manual* cygnus sl 5000 NE68433 NE68430 NE68439E NE68418 NE68419 NE677M04 NE68533 NE68530 NE68539E NE68518 NE68519 NE685M03 , 2.5 Fig.16 NE68518 9 6 2.0 150 3 10 65 175 12.0 3 10 2.0
NEC
Original
UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz NEC Ga FET marking code T79 PC1658G gaas fet T79 D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925
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