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NE68519-T1-A California Eastern Laboratories (CEL) TRANSISTOR NPN 2GHZ SMD visit Digikey Buy
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NE68518-T1-A California Eastern Laboratories (CEL) TRANSISTOR NPN 2GHZ SOT343 visit Digikey Buy
NE68519-A California Eastern Laboratories (CEL) Bipolar Transistors NPN High Frequency visit Digikey Buy
NE68518-A California Eastern Laboratories (CEL) TRANSISTOR NPN 2GHZ SOT343 visit Digikey Buy
NE68539-T1-A California Eastern Laboratories (CEL) TRANSISTOR NPN 2GHZ SOT-143 visit Digikey Buy

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NE685 Datasheet

Part Manufacturer Description PDF Type
NE685 NEC Original
NE68518 NEC Semiconductor Selection Guide Original
NE68518 NEC NPN silicon high frequency transistor. Original
NE68518-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT343 Original
NE68518-T1 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original
NE68518-T1 NEC Original
NE68518-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT343 Original
NE68518-T1-A California Eastern Laboratories SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original
NE68519 NEC Semiconductor Selection Guide Original
NE68519 NEC NPN silicon high frequency transistor. Original
NE68519-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ MINIMOLD Original
NE68519-T1 NEC Original
NE68519-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SMD Original
NE68519-T1-A California Eastern Laboratories SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original
NE68530 NEC Semiconductor Selection Guide Original
NE68530 NEC NPN silicon high frequency transistor. Original
NE68530-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT-323 Original
NE68530-T1 NEC Original
NE68530-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT-323 Original
NE68530-T1-A California Eastern Laboratories SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original
Showing first 20 results.

NE685

Catalog Datasheet MFG & Type PDF Document Tags

UPA827TF

Abstract: UPA833TF D D D D D D D D D D D D D D D D D D D D D D D 0 D D NE680 NE856 NE681 NE685 NE686 NE687 NE688 NE856 NE680 NE681 NE688 NE856 NE685 NE686 NE687 NE856 NE681 NE856 NE685 NE688 NE685 NE681 NE856 NE685 NE856 NE685 NE688 S il 344 346 347 348 349 350 351 352 353 354 355 363 364 371 365 366 366 367 367 372 372 , 360 NE685 NE686 NE687
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OCR Scan
UPA802T UPA827TF UPA831TF UPA833TF sot-363 dual sot363 UPA800T UPA801T UPA806T UPA807T UPA808T

85500 transistor

Abstract: NPN Transistor 13009 5° 5° 0 to 0.1 NE685 SERIES ORDERING INFORMATION PART NUMBER NE68518-T1-A NE68519-T1-A NE68530-T1-A NE68533-T1-A NE68539-T1-A NE68539R-T1 QUANTITY 3000 3000 3000 3000 3000 3000 PACKAGING Tape & Reel , 2SC5015 18 NE68519 2SC5010 19 NE68530 2SC4959 30 NE68533 2SC4955 33 NE68539/39R 2SC4957 39 , °C) NE68518, NE68530 D.C. POWER DERATING CURVE NE68519 D.C. POWER DERATING CURVE Total Power Dissipation , Temperature, TA (C°) Ambient Temperature, TA (C°) NE68533, NE68539 D.C. POWER DERATING CURVE 12
California Eastern Laboratories
Original
85500 transistor NPN Transistor 13009 transistor d 13009 transistor MJE 13009 k 13009 transistor E 13009 8539R NE68539/39R

UPA827TF

Abstract: UPA833TF 1 1 (V) Ic (mA) UHU '* m 30 10 30 30 10 30 100 100 w m NE685 NE686 NE687 NE685 NE686 , 11 12 13 11 4.5 12 12 4.5 110 100 100 120 110 110 120 30 10 30 100 30 30 100 NE685 NE686 NE687 364 371 365 366 366 370 370 * 4^ NE688 NE685 NE685 NE688 Noise Figures and Associated Gain vs
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UPA814T NE696M01 NE698M01 NE699M01 UPA809T UPA826TF

cce 7100

Abstract: 85500 transistor 1 4 1.0 NE685 SERIES ORDERING INFORMATION PART NUMBER NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 QUANTITY 3000 3000 3000 3000 3000 3000 PACKAGING Tape & Reel , EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68518 2SC5015 18 NE68519 2SC5010 19 NE68530 2SC4959 30 NE68533 2SC4955 33 NE68539/39R 2SC4957 39 SYMBOLS PARAMETERS AND CONDITIONS UNITS , 1.10 1.19 1.25 1.48 1.74 1.49 1.45 1.37 NE685 SERIES NE68533 TYPICAL NOISE PARAMETERS
NEC
Original
cce 7100 cce 7100 0913 br 8764 539r P 13009 0803 BF109

HE 85500

Abstract: st 85500 r ORDERING INFORMATION PART NUMBER NE68518-T1 NE68519-T1 Note: 1. Lead material: Cu Lead plating: PbSn NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 QUANTITY 3000 3000 3000 3000 3000 3000 PACKAGING Tape , =25»o PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NE68518 2SC5015 18 NE68519 2SC5010 19 NE68530 2SC4959 30 NE68533 2SC4955 33 NE68539/39R 2SC4957 39 PARAMETERS AND , 0.26 0.22 3-94 NE685 SERIES TYPICAL PERFORMANCE CURVES NE68518, NE68530 D.C. POWER DERATING
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HE 85500 st 85500 EN 123400 ha 14052 HE 85500 TRANSISTOR bf 0252

014e1

Abstract: cce 7100 1.0 ORDERING INFORMATION * 0 to 01 PART NUMBER NE68518-T1 NE68519-T1 N E68530-T1 Note: 1. Lead material: Cu Lead plating: PbSn NE68533-T1 NE68539-T1 NE68539R-T1 QUANTITY 3000 3000 3000 3000 3000 3000 , BER PACKAGE OUTLINE SYMBOLS fr N F min G nf NE68518 2SC5015 18 NE68519 2SC5010 19 NE68530 2SC4959 30 NE68533 2SC4955 33 NE68539/39R 2SC4957 39 PARAMETERS AND CONDITIONS UNITS MIN TYP MAX , 0.22 NE685 SERIES TYPICAL PERFORMANCE CURVES NE68518, NE68530 D.C. POWER DERATING CURVE (t a = 25
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014e1 CD 5888 cb ic transistor j 13009 CD 5888 CB

cce 7100

Abstract: 85500 transistor . Emitter 4. Base EXCLUSIVE NORTH AMERICAN AGENT FOR PART NUMBER NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 QTY 3K/REEL 3K/REEL 3K/REEL 3K/REEL 3K/REEL 3K/REEL Note: 1 , NE68519 2SC5010 19 NE68530 2SC4959 30 NE68533 2SC4955 33 NE68539/39R 2SC4957 39 , 1.25 1.48 1.74 1.49 1.45 1.37 NE685 SERIES NE68533 TYPICAL NOISE PARAMETERS (TA = 25 , NE685 SERIES TYPICAL PERFORMANCE CURVES (TA = 25°C) NE68519 D.C. POWER DERATING CURVE Total Power
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Original
cce 7100 1027 704-00/cce 7100

uPA63

Abstract: UPA827TF NE68530 NE68630 NE68730 NE68830 NE85630 NE02133 NE68033 NE68133 NE68533 NE68633 NE68733 NE68833 NE85633 NE97733 NE97833 NE02139 NE68039 NE68139 NE68539 NE68639 NE68739 NE68839 NE85639 NE68039R NE68139R NE68539R , NE68118 NE68518 NE68618 NE68718 NE68818 NE8S618 NE6801S NE68119 NE68519 NE68619 NË68719 NE68819 NE85619 , D D D D D D D D D D NE680 NE856 NE681 NE685 NE686 NE687 NE688 NE856 NE680 NE681 NE688 NE856 NE685 NE686 NE687 NE856 NE681 NE856 NE685 NE688 NE685 NE681 NE856 NE685 NE856 NE685 NE688 3-235 3-238 3-243
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uPA63 URA810T UPA811T UPA812T UPA821TF UPA828TF UPA832TF

cce 7100

Abstract: transistor d 13009 1 4 1.0 NE685 SERIES ORDERING INFORMATION PART NUMBER NE68518-T1-A NE68519-T1-A NE68530-T1-A NE68533-T1-A NE68539-T1-A NE68539R-T1 QUANTITY 3000 3000 3000 3000 3000 3000 , 25°C) PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68518 2SC5015 18 NE68519 2SC5010 19 NE68530 2SC4959 30 NE68533 2SC4955 33 NE68539/39R 2SC4957 39 SYMBOLS , 1.10 1.19 1.25 1.48 1.74 1.49 1.45 1.37 NE685 SERIES NE68533 TYPICAL NOISE PARAMETERS
California Eastern Laboratories
Original
BJT BF 331 tr 13009 TRANSISTOR Bf 522

NE685

Abstract: RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE =0.5 V to 2.5 V, IC = 1 mA to 20 mA Date: 08/03 Q1 NE685 , ) AF (2) Q1 NE685 0.34 0.5 0 0.75 0 0.1 2.0e-12 6 3 0.005 0 1.0e-9 1.11 0 3 0 1 Q2 NE851 0.14 0.5 0
California Eastern Laboratories
Original
UPA862TD AN1026

cce 7100

Abstract: 85500 transistor PART NUMBER NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 QUANTITY 3000 , 2SC5015 18 NE68519 2SC5010 19 NE68530 2SC4959 30 NE68533 2SC4955 33 NE68539/39R , (mW) Total Power Dissipation, PT (mW) NE68518, NE68530 D.C. POWER DERATING CURVE 200 180 , Temperature, TA (C°) NE68533, NE68539 D.C. POWER DERATING CURVE 150 INSERTION GAIN vs. COLLECTOR , | NE685 SERIES NE68518 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX LB Collector
NEC
Original
0-834-10 BJT BF 167 BJT IC Vce

prime 15005

Abstract: pa 4010 IC NE68519-T1 NE68530-T1 ,T2 NE68533-TIB, T2B NE68539-T1, T2 Note: 1. Lead material: Cu Lead plating: PbSn QTY , NE68519 2SC5010 19 NE6853Q 2SC4959 30 NE68533 2SC4955 33 NE68S39 2SC4957 39 PARAMETERS AND , 13.0 2000 1.48 8.2 3000 1.74 5.5 NE685 SERIES TYPICAL PERFORMANCE CURVES NE68518, NE68530 D.C , mA °C °C RATINGS 9 6 2.0 30 150 -65 to +150 NE68519 RATINGS 9 6 2.0 30 150 -65 to +150 NE68530 , ai Ambient Temperature, Ta (C°) Ambient Temperature, Ta (C°) NE68533, NE68539 D.C. POWER
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prime 15005 pa 4010 IC ne665 T2B SOT23 UTUNE33

85500 transistor

Abstract: st 85500 NE68518-T1 NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 3-99 1. 2. 3. 4. Emitter Collector , ES NE68518.NE68530 D.C. POWER DERATING CURVE < t a = 2s o NE68519 D.C. POWER DERATING CURVE E. £ , PACKAGEOUTUNE SYMBOLS fT NE68S18 2SC5015 18 NE68519 2SC5010 19 NE68530 2SC4959 30 NE68S33 2SC4955 , °C RATINGS 9 6 2.0 30 150 -65 to +150 NE68519 RATINGS 9 6 2.0 30 150 -65 to +150 NE68530 RATINGS 9 6 2.0 30 150 -65 to+150 NE68533 RATINGS 9 6 2.0 30 150 -65 to+150 NE68539/39R RATINGS 9 6
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LM 7209 P 13009 0708 0384 lm 7803 transistor c 2026 irl 3034

NE46734

Abstract: NE681 Small Signal Bipolar Transistor Performance Guide Optimum Noise Figure, NFOPT (dB) NE734 NE856 NE685 NE021 NE734 NE685 NE681 NE021 NE681 NE856 NE680 3.0 NE680 2.0 1.0 0 0.1 0.2 0.5 1.0 2.0 5.0 10.0 Gain at Optimum Noise Figure, GA (dB) 4.0 Output Power, POUT (dBm) & Gain GA (dB) Frequency, f (GHz) 35 NE46134 10 V, 80 mA, P1dB = 26.7 NE46134 10 V, 50 mA, P1dB = 24.4 NE46134 10 V, 30 mA, P1dB = 22.2 NE46134 30 NE85634
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Original
NE46734 1817 transistor

ic HS 2272

Abstract: tg 56700 . 2. 3. 4. Emitter Collector Emitter Base NE68519-T1 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1 3-99 , NE685 SERIES TYPICAL PERFORMANCE CURVES NE68518.NE68530 D.C. POWER DERATING CURVE (t a = 25°c ) NE68519 , REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NE68518 2SC5015 18 NE68519 2SC5010 19 NE68530 2SC4959 30 NE68533 2SC4955 33 NE68539/39R 2SC4957 39 PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN , VCEO NE68518 UNITS V V V mA °C °C RATINGS 9 6 2.0 30 150 -65 to +150 NE68519 RATINGS 9 6 2.0 30
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ic HS 2272 tg 56700 SR 13009 transistor sr 13009 IC tt 3034 8m80 NEG85 15-I005

855E

Abstract: mje 13006 0.5±0.05 DESCRIPTION NEC's UPA862TD contains one NE851 and one NE685 NPN high frequency silicon , pushing effects. The NE685 is an excellent buffer transistor, featuring low noise and high gain. NEC , NONLINEAR MODEL PARAMETERS(1) Parameters Q1 NE685 Q2 NE851 Parameters Q1 NE685 Q2 NE851
California Eastern Laboratories
Original
855E mje 13006 bf 9673 S21E UPA862TD-T3

m03 transistor

Abstract: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M03 FEATURES · NEW M03 PACKAGE: · Smallest transistor outline package available · Low profile/0.59 mm package height · Flat lead style for better RF , "M03" package is ideal for today's portable wireless applications. The NE685 is also available in six , NE685M03 2SC5435 M03 UNITS GHz dB dB 7 75 ma PARAMETERS AND CONDITIONS Gain Bandwidth at V c e = 3 V , case connected to the guard terminal at the bridge. 3-90 NE685M03 ABSOLU TE MAXIMUM RA1`INGS1 (T
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m03 transistor E685M IS21EI2

KF 517

Abstract: AN1026 0.5±0.05 DESCRIPTION NEC's UPA862TD contains one NE851 and one NE685 NPN high frequency silicon , pushing effects. The NE685 is an excellent buffer transistor, featuring low noise and high gain. NEC , UPA862TD NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS(1) Parameters Q1 NE685 Q2 NE851 Parameters Q1 NE685 Q2 NE851 IS 7.0e-16 137e-18 MJC 0.34 0.14 BF 109 166
California Eastern Laboratories
Original
KF 517 UPA862TD-T3-A

NE681

Abstract: NE685 DESCRIPTION The UPA840TC contains one NE685 and one NE681 NPN high frequency silicon bipolar chip. NEC's new
NEC
Original
UPA840TC-T1

2SC5617

Abstract: NE685M13 PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M13 OUTLINE DIMENSIONS (Units in mm , 0.35 2 1 +0.1 0.15 ­0.05 0.1 0.1 0.2 DESCRIPTION 0.2 The NE685M13 transistor is , applications. The NE685 is also available in six different low cost plastic surface mount package styles , PARAMETERS AND CONDITIONS NE685M13 2SC5617 M13 UNITS MIN TYP fT Gain Bandwidth at VCE = 3 V , Eastern Laboratories NE685M13 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS
NEC
Original

AN-1017

Abstract: stencil tension "19" ample is NEC's NE685 series of plastic surSurface Mount Package Package Package face mount bipolar transistors. Figure 4 demTransistor Package onstrates how Noise Figure and Gain for a NE685 , Figure 4. NE685 Bipolar Die: Performance vs. Package Size f(MHz) NE68533 (In the NEC "33" Pkg
California Eastern Laboratories
Original
AN1017 AN-1017 stencil tension FS710

AN1017

Abstract: NE680 "19" ample is NEC's NE685 series of plastic surSurface Mount Package Package Package face mount bipolar transistors. Figure 4 demTransistor Package onstrates how Noise Figure and Gain for a NE685 , devices in specific areas on the PC board, away from from the larger components. Figure 4. NE685
California Eastern Laboratories
Original
nec projector

m33 tf 130

Abstract: NESG204619 13.5 NE685 2 7 9.0 13.0 100 10 S06 SOT-363 NE686 UPA808T 2.0 2 , Leads NE851 Miniature Recessed Leads NE687 Miniature NE685 Twin Transistors in a
California Eastern Laboratories
Original
NE68030 m33 tf 130 NESG204619 NESG2046 NESG2030M042 mini mold transistor 25 small signal transistor NE68130 UPA895TD UPA861TD NE894
Showing first 20 results.