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NE6510179A Datasheet

Part Manufacturer Description PDF Type
NE6510179A California Eastern Laboratories NECs 3W L&S-BAND MEDIUM POWER GaAs HJ-FET Original
NE6510179A NEC 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET Original
NE6510179A NEC Semiconductor Selection Guide Original
NE6510179A NEC 1 W L-BAND POWER GaAs HJ-FET Original
NE6510179A NEC 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET Scan
NE6510179A-A NEC TRANS JFET N-CH 8V 720MA BULK Original
NE6510179A-EVPW19 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 1.9GHZ Original
NE6510179A-EVPW24 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 2.4GHZ Original
NE6510179A-EVPW26 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 2.6GHZ Original
NE6510179A-EVPW35 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE6510179A 3.5GHZ Original
NE6510179A-T1 California Eastern Laboratories NECs 3W L&S-BAND MEDIUM POWER GaAs HJ-FET Original
NE6510179A-T1 NEC 1 W L-BAND POWER GaAs HJ-FET Original
NE6510179A-T1 NEC 1 W L-Band Power GaAs HJ-FET Original
NE6510179A-T1 NEC 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET Scan
NE6510179A-T1-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, HJ-FET GAAS 1.9GHZ 1W 79A Original
NE6510179A-T1-AZ NEC FET Transistor: 1W L-BAND POWER GaAs HJ-FET: Tape And Reel Original

NE6510179A

Catalog Datasheet MFG & Type PDF Document Tags

GRM40X7R104K025BL

Abstract: IC 14553 gain compression is 3.0 dB at Vds > 4.2 V. ORDERING INFORMATION PART NUMBER QTY NE6510179A-T1 1 K , 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET NE6510179A FEATURES â'¢ LOW COST PLASTIC SURFACE MOUNT , Note: Unless otherwise specified, tolerance is ±0.2 mm. DESCRIPTION_ The NE6510179A is a 1 W GaAs , NE6510179A 79A Functional Characteristics SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS , standard devices is 1 reject for several samples. California Eastern Laboratories NE6510179A TYPICAL RF
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OCR Scan
GRM40X7R104K025BL IC 14553 PT 1017 T5.5 murata atc 11 ma 17393

NEC k 1760

Abstract: NE6510179A INFORMATION PART NUMBER QTY NE6510179A-T1 NE6510179A EXCLUSIVE NORTH AMERICAN AGENT FOR UNITS , PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER NE6510179A GaAs HJ-FET FEATURES OUTLINE , otherwise specified, tolerance is ±0.2 mm. DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for , . ELECTRICAL CHARACTERISTICS (TC = 25°C) PART NUMBER NE6510179A PACKAGE OUTLINE Functional , 1 reject for several samples. California Eastern Laboratories NE6510179A TYPICAL RF
NEC
Original
NEC k 1760 California Eastern Laboratories OR NEC ne651

NE6510179A

Abstract: NE65 at VDS > 4.2 V. ORDERING INFORMATION PART NUMBER NE6510179A-T1 NE6510179A QTY 1 K/Reel Bulk, 100 , 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES · LOW COST PLASTIC SURFACE MOUNT , 0.2 ­ 0.1 BOTTOM VIEW DESCRIPTION The NE6510179A is a GaAs HJ-FET designed for medium power , Drain Current Pinch-Off Voltage Thermal Resistance Gate to Drain Breakdown Voltage = 25°C) NE6510179A , 1 reject for several samples. California Eastern Laboratories NE6510179A TYPICAL RF
California Eastern Laboratories
Original
NE65 ms 16881 IMT-2000

NE6510179A

Abstract: at VDS > 4.2 V. ORDERING INFORMATION PART NUMBER NE6510179A-T1 NE6510179A QTY 1 K/Reel Bulk, 100 , 1W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES · LOW COST PLASTIC SURFACE MOUNT , 0.2 ­ 0.1 BOTTOM VIEW DESCRIPTION The NE6510179A is a GaAs HJ-FET designed for medium power , Drain Current Pinch-Off Voltage Thermal Resistance Gate to Drain Breakdown Voltage = 25°C) NE6510179A , 1 reject for several samples. California Eastern Laboratories NE6510179A TYPICAL RF
California Eastern Laboratories
Original

NE6510179A

Abstract: at VDS > 4.2 V. ORDERING INFORMATION PART NUMBER NE6510179A-T1 NE6510179A QTY 1 K/Reel Bulk, 100 , 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES · LOW COST PLASTIC SURFACE MOUNT , 0.2 ­ 0.1 BOTTOM VIEW DESCRIPTION The NE6510179A is a GaAs HJ-FET designed for medium power , Drain Current Pinch-Off Voltage Thermal Resistance Gate to Drain Breakdown Voltage = 25°C) NE6510179A , 1 reject for several samples. California Eastern Laboratories NE6510179A TYPICAL RF
California Eastern Laboratories
Original

NE6510179A

Abstract: INFORMATION PART NUMBER NE6510179A-T1 NE6510179A QTY 1 K/Reel Bulk, 100 piece min. Note: 1. Operation in , 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES · LOW COST PLASTIC SURFACE MOUNT , , tolerance is ±0.2 mm DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for medium power , Resistance Gate to Drain Breakdown Voltage = 25°C) NE6510179A 79A UNITS dBm dB % A A V °C/W V 12 -2.0 5 50 , . California Eastern Laboratories NE6510179A TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC
California Eastern Laboratories
Original

NE6510179A

Abstract: . NE6510179A-T1 NE6510179A 1 K/Reel Bulk, 100 piece min. 2-21 , TAPE & REEL PACKAGE OPTION AVAILABLE NE6510179A (Units in mm) OUTLINE DIMENSIONS PACKAGE , mm. d e s c r ip t io n _ The NE6510179A is a 1 W GaAs HJ-FET designed for , . ELECTRICAL CHARACTERISTICS PART NUMBER (Tc = 2 5° q NE6510179A 79A UNITS MIN TYP MAX TEST CONDITIONS , NE6510179A TYPICAL RF PE RFORMANCE FOR REFERENCE (NOT SPECIFIED) SYMBOLS Pout (Tc = 2 5 °q MAX TEST
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OCR Scan

NE6510179A

Abstract: hjfet PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET NE6510179A FEATURES â'¢ LOW COST PLASTIC SURFACE MOUNT PACKAGE â'¢ HIGH OUTPUT POWER:+31.5 dBm TYP @ Vds = 3.5 V, idsq = 150 mA, f = 850 MHz, Pin = +20 dBm +32.0 dBm TYP @ vds = 3.2 v, idsq = 200 mA, f = 1760 MHz, Pin = +24 dBm , : Unless otherwise specified, tolerance is ±0.2 mm. DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET , . ELECTRICAL CHARACTERISTICS (Tc = 2s°c) PART NUMBER PACKAGE OUTLINE NE6510179A 79A Functional
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OCR Scan
hjfet

NE6510179A

Abstract: INFORMATION PART NUMBER NE6510179A-T1 NE6510179A QTY 1 K/Reel Bulk, 100 piece min. Note: 1. Operation in , 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES · LOW COST PLASTIC SURFACE MOUNT , , tolerance is ±0.2 mm DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for medium power , Resistance Gate to Drain Breakdown Voltage = 25°C) NE6510179A 79A UNITS dBm dB % A A V °C/W V 12 -2.0 5 50 , . California Eastern Laboratories NE6510179A TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC
California Eastern Laboratories
Original

NE6510179A

Abstract: at VDS > 4.2 V. ORDERING INFORMATION PART NUMBER NE6510179A-T1 NE6510179A QTY 1 K/Reel Bulk, 100 , NEC's 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES · LOW COST PLASTIC SURFACE MOUNT , 0.2 ­ 0.1 BOTTOM VIEW DESCRIPTION NEC's NE6510179A is a GaAs HJ-FET designed for medium power , Drain Current Pinch-Off Voltage Thermal Resistance Gate to Drain Breakdown Voltage = 25°C) NE6510179A , 1 reject for several samples. California Eastern Laboratories NE6510179A TYPICAL RF
California Eastern Laboratories
Original
Abstract: INFORMATION PART NUMBER NE6510179A-T1 NE6510179A QTY 1 K/Reel Bulk, 100 piece min. Note: 1. Operation in , 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES · LOW COST PLASTIC SURFACE MOUNT , specified, tolerance is ±0.2 mm. DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for medium , Thermal Resistance Gate to Drain Breakdown Voltage = 25°C) NE6510179A 79A UNITS dBm dB % A A V °C/W V , . California Eastern Laboratories NE6510179A TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC California Eastern Laboratories
Original

a 1232 nec

Abstract: NE6510179A INFORMATION Part Number NE6510179A-T1 79A Package Supplying Form 12 mm tape width, 1 kpcs/reel Remark To , DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1YV GaAs HJ-FET designed for middle power transmitter applications for mobile communication , : NE6510179A) * ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Operation in excess of any one of these parameters , Compression Channel Temperature Symbol V ds NE6510179A Test Conditions MIN. TYP. MAX. 4.2 5.0
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OCR Scan
a 1232 nec nec 1565 NEC TANTALUM
Abstract: +25 dBm ORDERING INFORMATION Part Num ber NE6510179A-T1 Remark Package 79 A Supplying , 7 9 A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1W GaAs HJ-FET , office. (Part number for sample order: NE6510179A) ☠ABSOLUTE MAXIMUM RATINGS (T a = 25 , © NEC Corporation 1 9 9 8 NEC NE6510179A RECOMMENDED OPERATING LIMITS Characteristics Drain , bset Vds = 3.5 MIN. V NEC ☠NE6510179A OUTPUT POWER, DRAIN CURRENT AND GATE -
OCR Scan

NE6510179A

Abstract: NE6510179A-T1 MHz, Pin = +25 dBm ORDERING INFORMATION Part Number Package NE6510179A-T1 79A , DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication , , consult your NEC sales representative (Part number for sample order: NE6510179A). Caution Please , points. © 1998, 2000 NE6510179A ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Operation in excess of
NEC
Original

NE6510179A

Abstract: NE6510179A-T1 MHz, Pin = +25 dBm ORDERING INFORMATION Part Number NE6510179A-T1 Package 79A Supplying , DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1W GaAs HJ-FET designed for middle power transmitter applications for mobile communication , NEC sales office. (Part number for sample order: NE6510179A) Caution Please handle this device , points. © 1998, 1999 NE6510179A ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Operation in excess of
NEC
Original

MCR03J

Abstract: NE6510179AT1A INFORMATION PART NUMBER NE6510179A-T1-A NE6510179A-A TOTAL POWER DISSIPATION vs. CASE TEMPERATURE , NEC's 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS (Units in , : Unless otherwise specified, tolerance is ±0.2 mm NEC's NE6510179A is a GaAs HJ-FET designed for medium , . ELECTRICAL CHARACTERISTICS (TC = 25°C) PART NUMBER NE6510179A Functional Characteristics , for several samples. California Eastern Laboratories NE6510179A TYPICAL RF PERFORMANCE FOR
California Eastern Laboratories
Original
MCR03J NE6510179AT1A IC 13700 AF127 100A4R7CP150X

NEC k 1760

Abstract: NE6510179A TYP 3.5 MAX 6.0 125 5.0 dB ORDERING INFORMATION PART NUMBER NE6510179A-T1 NE6510179A , CLASS AB OPERATION TAPE & REEL PACKAGE OPTION AVAILABLE NE6510179A OUTLINE DIMENSIONS (Units in , : Unless otherwise specified, tolerance is ±0.2 mm. DESCRIPTION_ The NE6510179A , ) NE6510179A 79A UNITS dBm dB % A A V -2.0 PACKAGE OUTLINE SYMBOLS Functional Characteristics P out , devices is 1 reject for several samples. California Eastern Laboratories NE6510179A TYPICAL RF
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OCR Scan

NE6510179A

Abstract: INFORMATION PART NUMBER NE6510179A-T1 NE6510179A QTY 1 K/Reel Bulk, 100 piece min. Note: 1. Operation in , 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES · LOW COST PLASTIC SURFACE MOUNT , , tolerance is ±0.2 mm DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for medium power , Resistance Gate to Drain Breakdown Voltage = 25°C) NE6510179A 79A UNITS dBm dB % A A V °C/W V 12 -2.0 5 50 , . California Eastern Laboratories NE6510179A TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC
California Eastern Laboratories
Original

nec 772

Abstract: NE6510179A MHz, Pin = +25 dBm ORDERING INFORMATION Part Number Package NE6510179A-T1 79A , DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication , , contact your nearby sales office. Part number for sample order: NE6510179A Caution Please handle , NEC Compound Semiconductor Devices 2001 NE6510179A ABSOLUTE MAXIMUM RATINGS (TA = +25°C
NEC
Original
nec 772 NE6510179 PG10022EJ01V0DS

NE6510179A

Abstract: NE650103M NEC Discrete Power Devices www.cel.com GaAs Driver Devices Typical Specifications @ TC = 25°C Power & Gain Frequency Linear Range P1dB POUT PIN Gain (GHz) (dBm) (dBm) (dBm) (dB) Part Number NE651R479A 0.8 to 3.7 - NE6510179A 0.8 to 3.7 - NE650103M 0.8 to 2.7 29.5 40.0 15.0 12.0 35.0 25.0 10.0 40.0 30.0 11.0 Power Added Test Efficiency1 Frequency VDS (%) (GHz) (V) 58 IDS1 (mA) Package Code 350 79A
California Eastern Laboratories
Original
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