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| Part Number | Manufacturer | Description | |||||
| 1. |  NE55410GR |
California Eastern Laboratories / NEC | N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER | 315.11 Kb | 13 Pg. | ||
| 2. | NE55410GR |
California Eastern Laboratories / NEC | N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER | 542.34 Kb | 14 Pg. | ||
| 3. | NE55410GR-T3-AZ |
California Eastern Laboratories / NEC | N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER | 315.12 Kb | 13 Pg. |
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| 1. |  542.35 Kb • 14 Pages |
Abstract: ... 2004, 2007. DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such. as, cellular base station amplifier, analog/digital TV-transmitters ... Labels: NE55410GR, RoHS, Pb-Free |
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| 2. |  315.11 Kb • 13 Pages |
Abstract: ... DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such. as, cellular base station amplifier, analog/digital TV-transmitters, and the ... Labels: NE55410GR, RoHS, Pb-Free |
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