NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

NE3509M04 Datasheet

Part Manufacturer Description PDF Type Ordering
NE3509M04 California Eastern Laboratories / NEC L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
ri

11 pages,
1229.62 Kb

Original Buy
datasheet frame
NE3509M04 California Eastern Laboratories / NEC L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
ri

9 pages,
199.3 Kb

Original Buy
datasheet frame
NE3509M04-A California Eastern Laboratories / NEC L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
ri

11 pages,
1229.62 Kb

Original Buy
datasheet frame
NE3509M04-T2 California Eastern Laboratories / NEC L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
ri

11 pages,
1229.63 Kb

Original Buy
datasheet frame
NE3509M04-T2 California Eastern Laboratories / NEC L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
ri

9 pages,
199.3 Kb

Original Buy
datasheet frame
NE3509M04-T2-A California Eastern Laboratories / NEC L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
ri

11 pages,
1229.62 Kb

Original Buy
datasheet frame

NE3509M04

Catalog Datasheet Results Type PDF Document Tags
Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 NE3509M04-T2 Order Number NE3509M04-A NE3509M04-T2-A NE3509M04-T2B-A Package Flat-lead 4-pin thintype super minimold (M04) (Pb-Free , · Pin 1 (Source), Pin 2 (Drain) face the perforation side of the tape NE3509M04-T2B , : NE3509M04-A ABSOLUTE MAXIMUM RATINGS (T A = +25C) Parameter Drain to Source Voltage Gate to Source Voltage , HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL ... Original
datasheet

9 pages,
365.22 Kb

NE3509M04-A ne3509m04 m04 marking marking v80 transistor marking v80 ghz NE3509M04 NE3509M04 abstract
datasheet frame
Abstract: NE3509M04 NE3509M04-A NE3509M04-T2 4 50 () NE3509M04-T2-A (M04) V80 8 mm 1 2 3 k / () 15 k / NE3509M04-T2B NE3509M04-T2B-A NE3509M04 , Hetero Junction Field Effect Transistor NE3509M04 N LS NF = 0.4 dB TYP., Ga = , 2005, 2008 NE3509M04 TA = 25°C MIN. TYP. MAX. VDS - 2 3 , ) VDS = 2 V, ID = 10 mA (Non-RF) f = 2 GHz 2 PG10608JJ02V0DS PG10608JJ02V0DS NE3509M04 TA = 25°C vs. ... Original
datasheet

12 pages,
708.25 Kb

NE3509M04-T2-A NE3509M04-T2 HS350 NE3509M04-A NE3509M04 datasheet abstract
datasheet frame
Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel , HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL , evaluation samples, contact your nearby sales office. Part number for sample order: NE3509M04 ABSOLUTE , 2006 NS CP(K) NE3509M04 RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Symbol MIN. ... Original
datasheet

9 pages,
199.32 Kb

NE3509M04-T2-A NE3509M04-T2 NE3509M04-A NE3509M04 NE3509 HS350 NE3509M04 abstract
datasheet frame
Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel , DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER , evaluation samples, contact your nearby sales office. Part number for sample order: NE3509M04 ABSOLUTE , NS CP(K) Printed in Japan 2005, 2006 NE3509M04 RECOMMENDED OPERATING CONDITIONS (TA = +25°C ... Original
datasheet

10 pages,
76.9 Kb

transistor marking v80 ghz NE3509M04. S2P NE3509M04-T2-A NE3509M04-T2 NE3509M04-A NE3509M04 NE3509 HS350 nec v80 NE3509M04 abstract
datasheet frame
Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04-T2B Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel) V80 type super minimold NE3509M04-T2B-A (M04) (Pb-Free , DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER , office. Part number for sample order: NE3509M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter ... Original
datasheet

10 pages,
77.17 Kb

NEC Ga FET marking L NE3509M04-T2-A NE3509M04-T2 NE3509M04-A NE3509M04 HS350 nec v80 NE3509M04 abstract
datasheet frame
Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04-T2B Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel) V80 type super minimold NE3509M04-T2B-A (M04) (Pb-Free , DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER , office. Part number for sample order: NE3509M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter ... Original
datasheet

12 pages,
204.81 Kb

NE3509M04-T2-A NE3509M04-A NE3509M04 HS350 NE3509M04-T2 NE3509M04. S2P datasheet abstract
datasheet frame
Abstract: Quantity Marking NE3509M04 NE3509M04-A 50pcs (Non reel) NE3509M04-T2 NE3509M04-T2-A 3 , PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3509M04 L to S BAND , office. Part number for sample order: NE3509M04 ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C ) PARAMETER , 2005 CP(K) © NEC Compound Semiconductor Devices 2005 NE3509M04 RECOMMENDED OPERATING CONDITIONS , NE3509M04 TYPICAL CHARACTERISTICS TA = +25 °C) DRAIN CURRENT vs. GATE to SOURCE VOLTAGE 50 Mounted ... Original
datasheet

11 pages,
1229.62 Kb

Power Transisitor 100V 2A cel 502 NE3509 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NT 407 F 0429 01 2701 00 a 933 transisitor NEC Ga FET marking L NE3509M04 abstract
datasheet frame
Abstract: (NE69039 NE69039) 2SC5754 2SC5754 (NE664M04 NE664M04) PG2179TB PG2179TB HJ-FET 2SC5369 2SC5369 (NE696M01 NE696M01) NE3509M04 PC2756TB PC2756TB PC2757TB PC2757TB , 2 Tr. RF 1st 2nd PLL NE3508M04 NE3508M04 NE3509M04 NE3509M14 NE3509M14 NESG3032M14 NESG3032M14 NESG3033M14 NESG3033M14 , ) 26 GPS RX 1575.42 MHz BPF NE3508M04 NE3508M04 NE3509M04 2SC5507 2SC5507 NE3509M14 NE3509M14 2SC5508 2SC5508 NESG3032M14 NESG3032M14 ... Original
datasheet

42 pages,
861.89 Kb

PC3219GV NE696M01 PC3223TB PG2179TB 2SC3357/NE85634 PC8236T6N 2sc3357 NE3512 PC3217GV NE3517S03 NESG240033 NESG2101 NESG2031M05 NE5510279A datasheet abstract
datasheet frame
Abstract: NE3508M04 NE3508M04 0.6 800 1 to 6 2 2.0 10 NE3509M04 0.6 400 1 to 6 2 2.0 10 ... Original
datasheet

2 pages,
123.35 Kb

NE3503M04 NE350184C NE27200 NE3509M04 NE3510 MICRO-X NE3511S02 NE3514S02 NE4210S01 NE321000 GHZ micro-X Package NE2720 ne3210s01 GHZ micro-X ceramic Package NE27200 abstract
datasheet frame
Abstract: Function Type Name Feature Discrete Tr. High fT, Low Noise NE3509M04 Low Noise GaAs FET , NE3509M04 NE3509M14 NE3509M14 NESG3032M14 NESG3032M14 SiGe Tr. NESG3033M14 NESG3033M14 PC8230TU PC8230TU SiGe:C MMIC PC8231TK PC8231TK PC8232T5N PC8232T5N , design. 26 System configuration example GPS RX 1575.42 MHz BPF NE3508M04 NE3508M04 2SC5507 2SC5507 NE3509M04 ... Original
datasheet

42 pages,
497.88 Kb

transistor 20107 UPG2253 NE662M04 NESG240033 FRS lna upc3236 NE3508 2SC3357/NE85634 2SC4226 APPLICATION NOTES UPC3240 NE5510279A NE3517S03 uPD5716GR 800 Mhz Cordless Phone circuit diagram datasheet abstract
datasheet frame

Avago Cross Reference Results

Avago Part Cross Reference Type Manufacturer
MGA-645T6 Buy NE3509M04 Buy Close Equivalent NEC Electronics

CEL Cross Reference Results

CEL Part Industry Part Manufacturer Type Comments
NE3509M04-A Buy ALM1106 Buy Avago Closest Equivalent Super Low Noise Pseudomorphic HJ FET, RoHS compliant
NE3509M04-A Buy ATF-55143 Buy Avago Closest Equivalent Super Low Noise Pseudomorphic HJ FET, RoHS compliant
NE3509M04-A Buy BFP740 Buy Infineon Closest Equivalent Super Low Noise Pseudomorphic HJ FET, RoHS compliant
NE3509M04-A Buy CFY35 Buy Infineon Closest Equivalent Super Low Noise Pseudomorphic HJ FET, RoHS compliant
NE3509M04-A Buy FHC40LG Buy Fujitsu Closest Equivalent Super Low Noise Pseudomorphic HJ FET, RoHS compliant
NE3509M04-A Buy NE334S01 Buy NEC Closest Equivalent Super Low Noise Pseudomorphic HJ FET, RoHS compliant
NE3509M04-T2-A Buy NE34018 Buy NEC Closest Equivalent Super Low Noise Pseudomorphic HJ FET, RoHS compliant