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Part : NE3509M04-A Supplier : California Eastern Laboratories Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : NE3509M04-EVNF24-A Supplier : California Eastern Laboratories Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : NE3509M04-T2-A Supplier : California Eastern Laboratories Manufacturer : Avnet Stock : 3,000 Best Price : - Price Each : -
Part : NE3509M04-T2-A Supplier : California Eastern Laboratories Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : NE3509M04-T2-A Supplier : California Eastern Laboratories Manufacturer : Chip1Stop Stock : 2,722 Best Price : $0.6741 Price Each : $1.4735
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NE3509M04 Datasheet

Part Manufacturer Description PDF Type
NE3509M04 California Eastern Laboratories L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original
NE3509M04 California Eastern Laboratories L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original
NE3509M04-A California Eastern Laboratories L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original
NE3509M04-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, AMP HJ-FET 2GHZ 4-SMINI Original
NE3509M04-EVNF24-A California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL DEV RF NE3509M04 Original
NE3509M04-T2 California Eastern Laboratories L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original
NE3509M04-T2 California Eastern Laboratories L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original
NE3509M04-T2-A California Eastern Laboratories L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original
NE3509M04-T2-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, AMP HJ-FET 2GHZ SOT-343 Original

NE3509M04

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: NE3509M04 NE3509M04-A 50pcs (Non reel) NE3509M04-T2 NE3509M04-T2-A 3 Kpcs/reel V80 , PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3509M04 L to S BAND , for sample order: NE3509M04 ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C ) PARAMETER SYMBOL , 2005 CP(K) © NEC Compound Semiconductor Devices 2005 NE3509M04 RECOMMENDED OPERATING CONDITIONS , NE3509M04 TYPICAL CHARACTERISTICS TA = +25 °C) DRAIN CURRENT vs. GATE to SOURCE VOLTAGE 50 Mounted California Eastern Laboratories
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NEC Ga FET marking L a 933 transisitor 0429 01 2701 00 NT 407 F NE3509 cel 502
Abstract: NE3509M04 NE3509M04-A NE3509M04-T2 4 50 () NE3509M04-T2-A (M04) V80 8 mm 1 2 3 k / () 15 k / NE3509M04-T2B NE3509M04-T2B-A NE3509M04 , Hetero Junction Field Effect Transistor NE3509M04 N LS NF = 0.4 dB TYP., Ga = , 2005, 2008 NE3509M04 TA = 25°C MIN. TYP. MAX. VDS - 2 3 , ) VDS = 2 V, ID = 10 mA (Non-RF) f = 2 GHz 2 PG10608JJ02V0DS NE3509M04 TA = 25°C vs NEC
Original
HS350 nec v80 IR260
Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel , HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL , evaluation samples, contact your nearby sales office. Part number for sample order: NE3509M04 ABSOLUTE , 2006 NS CP(K) NE3509M04 RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Symbol MIN California Eastern Laboratories
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transistor marking v80 ghz sdars lna NE3509M04. S2P DSA0029112
Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04-T2B Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel) V80 type super minimold NE3509M04-T2B-A (M04) (Pb-Free , DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER , office. Part number for sample order: NE3509M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter NEC
Original
PG10608EJ02V0DS
Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 NE3509M04-T2 Order Number NE3509M04-A NE3509M04-T2-A NE3509M04-T2B-A Package Flat-lead 4-pin thintype super minimold (M04) (Pb-Free , · Pin 1 (Source), Pin 2 (Drain) face the perforation side of the tape NE3509M04-T2B , : NE3509M04-A ABSOLUTE MAXIMUM RATINGS (T A = +25C) Parameter Drain to Source Voltage Gate to Source Voltage , HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL California Eastern Laboratories
Original
marking v80 m04 marking
Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel , DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER , evaluation samples, contact your nearby sales office. Part number for sample order: NE3509M04 ABSOLUTE , NS CP(K) Printed in Japan 2005, 2006 NE3509M04 RECOMMENDED OPERATING CONDITIONS (TA = +25°C NEC
Original
Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04-T2B Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel) V80 type super minimold NE3509M04-T2B-A (M04) (Pb-Free , . DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER , office. Part number for sample order: NE3509M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter NEC
Original
Abstract: (NE69039) 2SC5754 (NE664M04) PG2179TB HJ-FET 2SC5369 (NE696M01) NE3509M04 PC2756TB PC2757TB , 2 Tr. RF 1st 2nd PLL NE3508M04 NE3509M04 NE3509M14 NESG3032M14 NESG3033M14 , ) 26 GPS RX 1575.42 MHz BPF NE3508M04 NE3509M04 2SC5507 NE3509M14 2SC5508 NESG3032M14 Renesas Electronics
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NESG2031M05 ic isl 887 NE3514 PG2179 NE5510279A NE3515S02 NE662M04 NESG2031M16 NE55410GR NEM090303M-28 NEM090603M-28
Abstract: NE3508M04 0.6 800 1 to 6 2 2.0 10 NE3509M04 0.6 400 1 to 6 2 2.0 10 California Eastern Laboratories
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NE27200 NE321000 NE4210S01 NE3503M04 NE3510M04 NE3511S02 m04 SMD nec smd code NE3512S02 GHZ micro-X ceramic Package NE3210S01
Abstract: : 0.4dB NF, 14 dB Gain, high linearity 4 NE3509M04 GaAs FET: 0.4dB NF, 18dB Gain, high gain 4 , NE3509M04 /M14 NESG2031M05 NE662M04 NESG2031M05 NE3508M04 NE3509M04 NE3509M14 NE3510M04 , 2.0 GHz 14.0 @ 2.0 GHz +18.0 M04 NE3509M04 GaAs HJ-FET 0.40 @ 2.0 GHz 17.5 @ 2.0 , NESG3033M14 SiGe HBT, 0.6 dB Noise Figure, 17.5 dB Gain @ 2.0 GHz, built-in ESD protection NE3509M04 , ) NE3503M04 0.2 160 2 to 18 NE3508M04 0.6 800 NE3509M04 0.6 400 NE3509M14 0.6 California Eastern Laboratories
Original
SMD M05 sot23 A3 smd sot-343 nE352 NE5531 2013/4M
Abstract: NE3509M04 Low Noise GaAs FET Down-converter D/C 2SC5369(NE696M01) HJ-FET PC2756TB 6 , NE3508M04 Feature GaAs HJ-FET NE3509M04 NE3509M14 NESG3032M14 SiGe Tr. NESG3033M14 PC8230TU , 1575.42 MHz BPF NE3508M04 2SC5507 NE3509M04 2SC5508 NE3509M14 NESG3032M14 uPC2749TB NESG3033M14 Renesas Electronics
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UPC8236 Microwave GaAs FET catalogue CATV MODULATOR 2SC3357/NE85634 upg2406t6r NE5500234 R09CA0001EJ0100 PX10020EJ42V0PF
Abstract: HJ-FET NE3509M04 Low Noise GaAs FET Down-converter PC2756TB 6-pin Super Minimold , Name NE3508M04 Feature GaAs HJ-FET NE3509M04 NESG3032M14 SiGe Tr. NESG3033M14 PC8230TU , NE3508M04 2SC5507 NE3509M04 NESG3032M14 2SC5508 NESG3033M14 uPC2749TB uPC8230TU uPC8231TK uPC8232T5N NEC
Original
digital tv tuner SW SPDT hjfet NESG240033 antenna for microwave CATV materials ANTENNA parabolic PX10020EJ39V0PF G0706
Abstract: Function Type Name Feature Discrete Tr. High fT, Low Noise NE3509M04 Low Noise GaAs FET , NE3509M04 NE3509M14 NESG3032M14 SiGe Tr. NESG3033M14 PC8230TU SiGe:C MMIC PC8231TK PC8232T5N , NE3509M04 2SC5508 NE3509M14 NESG3032M14 uPC2749TB NESG3033M14 uPC8230TU uPC8231TK uPC8232T5N Renesas Electronics
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NE3517S03 UPC3243 transistor 20107 NESG270034 NE3508 2SC4226 APPLICATION NOTES R09CA0001EJ0300
Abstract: Feature 2SC5369(NE696M01) High fT, Low Noise HJ-FET NE3509M04 Low Noise GaAs FET , Function 1st stage Type Name NE3508M04 Feature GaAs HJ-FET NE3509M04 NE3509M14 NESG3032M14 , NE3508M04 2SC5507 NE3509M04 2SC5508 NE3509M14 NESG3032M14 uPC2749TB NESG3033M14 uPC8230TU uPC8231TK NEC
Original
mobile phone basic block diagram PG2158T5K microwave Duplexer UPG2156 2SC5508 application NE5531079A PX10020EJ41V0PF
Abstract: NESG3032M14 NE3509M04 /M14 NESG2031M05 NE662M04 NESG2031M05 - NE3508M04 NE3509M04 NE3510M04 , GHz 14.0 @ 2.0 GHz +18.0 M04 NE3509M04 / M14 GaAs HJ-FET 0.40 @ 2.0 GHz 17.5 @ , M04 Plastic SMD D NE3509M04 0.6 400 0.1 to 6 2 2.0 10 0.45 17.5 3.0 California Eastern Laboratories
Original
SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd 10/2M
Abstract: MMIC 20 NE3509M04 HJ-FET NE3508M04 HJ-FET 15 0.2 0 PC8211TK SiGe MMIC PC8230TU , NESG3031M14 SiGe HBT NE3509M04 HJ-FET NESG2031M05 SiGe HBT 15 NE3508M04 HJ-FET 10 0 0.2 NEC
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nec mosfet marked v75 NEC Ga FET marking code T79 marking code C1G mmic FET marking code g5d LGA 1155 PIN diagram MMIC SOT 363 marking CODE 77 PX10727EJ02V0PF
Abstract: NESG2021M05 SiGe HBT PC8233TK SiGe:C MMIC PC8236T6N SiGe:C MMIC 20 NE3509M04 HJ-FET NE3508M04 , 20 NE3510M04 HJ-FET NESG2021M05 SiGe HBT NESG3031M05 NESG3031M14 SiGe HBT NE3509M04 , ., HJ-FET 2 10 2 000 0.45 2 14 2 F4TSMM NE3509M04 GPS, GaAs, LNA, etc., HJ-FET Renesas Electronics
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marking code C3E SOT-89 marking code C1E mmic PG2163T5N sot-23 g6g marking code C1H mmic PD5713TK R09CL0001EJ0100
Abstract: to 6 2 2.0 10 0.40 14.0 3.0 30 18.0 M04 Plastic SMD D NE3509M04 California Eastern Laboratories
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ne3511s02 s2p ne3512s02 s2p SMD M05 sot UPG2162T5N S06 SMD UPG2250T5N 07/2M
Abstract: Number N413 NE3210S01 NE350184C NE3503M04 NE3508M04 NE3509M04 NE3510M04 NE3511S02 NE3512S02 -
Original
mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 2SC5664 2002/95/EC 03P2J 03P2M 03P4J 03P4M 03P4MF
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