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NE3509M04 Datasheet

Part Manufacturer Description PDF Type Ordering
NE3509M04 California Eastern Laboratories L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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11 pages,
1229.62 Kb

Original Buy
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NE3509M04 California Eastern Laboratories L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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9 pages,
199.3 Kb

Original Buy
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NE3509M04-A California Eastern Laboratories L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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11 pages,
1229.62 Kb

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NE3509M04-T2 California Eastern Laboratories L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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11 pages,
1229.63 Kb

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NE3509M04-T2 California Eastern Laboratories L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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9 pages,
199.3 Kb

Original Buy
datasheet frame
NE3509M04-T2-A California Eastern Laboratories L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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11 pages,
1229.62 Kb

Original Buy
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NE3509M04-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, AMP HJ-FET 2GHZ 4-SMINI
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9 pages,
0 Kb

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NE3509M04-EVNF24-A California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL DEV RF NE3509M04
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9 pages,
0 Kb

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NE3509M04-T2-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, AMP HJ-FET 2GHZ SOT-343
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9 pages,
0 Kb

Original Buy
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NE3509M04

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: NE3509M04 NE3509M04-A 50pcs (Non reel) NE3509M04-T2 NE3509M04-T2-A 3 Kpcs/reel V80 , PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3509M04 L to S BAND , for sample order: NE3509M04 ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C ) PARAMETER SYMBOL , 2005 CP(K) © NEC Compound Semiconductor Devices 2005 NE3509M04 RECOMMENDED OPERATING CONDITIONS , NE3509M04 TYPICAL CHARACTERISTICS TA = +25 °C) DRAIN CURRENT vs. GATE to SOURCE VOLTAGE 50 Mounted ... California Eastern Laboratories
Original
datasheet

11 pages,
1229.62 Kb

Power Transisitor 100V 2A 09 72 264 6801 cel 502 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509 NT 407 F 0429 01 2701 00 a 933 transisitor NEC Ga FET marking L TEXT
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Abstract: NE3509M04 NE3509M04-A NE3509M04-T2 4 50 () NE3509M04-T2-A (M04) V80 8 mm 1 2 3 k / () 15 k / NE3509M04-T2B NE3509M04-T2B-A NE3509M04 , Hetero Junction Field Effect Transistor NE3509M04 N LS NF = 0.4 dB TYP., Ga = , 2005, 2008 NE3509M04 TA = 25°C MIN. TYP. MAX. VDS - 2 3 , ) VDS = 2 V, ID = 10 mA (Non-RF) f = 2 GHz 2 PG10608JJ02V0DS PG10608JJ02V0DS NE3509M04 TA = 25°C vs ... NEC
Original
datasheet

12 pages,
708.25 Kb

nec v80 NE3509M04-T2-A NE3509M04-T2 HS350 NE3509M04-A NE3509M04 TEXT
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Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel , HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL , evaluation samples, contact your nearby sales office. Part number for sample order: NE3509M04 ABSOLUTE , 2006 NS CP(K) NE3509M04 RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Symbol MIN ... California Eastern Laboratories
Original
datasheet

9 pages,
199.32 Kb

HS350 NE3509 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04. S2P sdars lna transistor marking v80 ghz TEXT
datasheet frame
Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04-T2B Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel) V80 type super minimold NE3509M04-T2B-A (M04) (Pb-Free , DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER , office. Part number for sample order: NE3509M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter ... NEC
Original
datasheet

10 pages,
77.17 Kb

NEC Ga FET marking L NE3509M04-T2-A NE3509M04-T2 NE3509M04-A NE3509M04 HS350 nec v80 TEXT
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Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 NE3509M04-T2 Order Number NE3509M04-A NE3509M04-T2-A NE3509M04-T2B-A Package Flat-lead 4-pin thintype super minimold (M04) (Pb-Free , · Pin 1 (Source), Pin 2 (Drain) face the perforation side of the tape NE3509M04-T2B , : NE3509M04-A ABSOLUTE MAXIMUM RATINGS (T A = +25C) Parameter Drain to Source Voltage Gate to Source Voltage , HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL ... California Eastern Laboratories
Original
datasheet

9 pages,
365.22 Kb

NE3509 m04 marking HS350 NE3509M04-A ne3509m04 transistor marking v80 ghz marking v80 NE3509M04 TEXT
datasheet frame
Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel , DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER , evaluation samples, contact your nearby sales office. Part number for sample order: NE3509M04 ABSOLUTE , NS CP(K) Printed in Japan 2005, 2006 NE3509M04 RECOMMENDED OPERATING CONDITIONS (TA = +25°C ... NEC
Original
datasheet

10 pages,
76.9 Kb

HS350 marking v80 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04. S2P sdars lna NE3509 transistor marking v80 ghz nec v80 TEXT
datasheet frame
Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04-T2B Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel) V80 type super minimold NE3509M04-T2B-A (M04) (Pb-Free , . DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER , office. Part number for sample order: NE3509M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter ... NEC
Original
datasheet

12 pages,
204.81 Kb

transistor marking v80 ghz NE3509M04-T2-A NE3509M04-A HS350 NE3509M04-T2 NE3509M04 NE3509M04. S2P TEXT
datasheet frame
Abstract: (NE69039 NE69039) 2SC5754 2SC5754 (NE664M04 NE664M04) PG2179TB PG2179TB HJ-FET 2SC5369 2SC5369 (NE696M01 NE696M01) NE3509M04 PC2756TB PC2756TB PC2757TB PC2757TB , 2 Tr. RF 1st 2nd PLL NE3508M04 NE3508M04 NE3509M04 NE3509M14 NE3509M14 NESG3032M14 NESG3032M14 NESG3033M14 NESG3033M14 , ) 26 GPS RX 1575.42 MHz BPF NE3508M04 NE3508M04 NE3509M04 2SC5507 2SC5507 NE3509M14 NE3509M14 2SC5508 2SC5508 NESG3032M14 NESG3032M14 ... Renesas Electronics
Original
datasheet

42 pages,
861.89 Kb

2SC3357/NE85634 NE3512 NESG260234 NESG240033 NESG270034 PC3217GV PC3223TB NE3508M04 NE3509M04 NESG2101 PC3219GV NE3517S03 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3514 2SC5508 ic isl 887 TEXT
datasheet frame
Abstract: NE3508M04 NE3508M04 0.6 800 1 to 6 2 2.0 10 NE3509M04 0.6 400 1 to 6 2 2.0 10 ... California Eastern Laboratories
Original
datasheet

2 pages,
123.35 Kb

MICRO-X NE350184C NE3510 NE3511S02 NE3503M04 NE3514S02 NE4210S01 NE2720 ne3210s01 NE27200 GHZ micro-X Package NE3509M04 NE3510M04 GHZ micro-X ceramic Package NE321000 NE3512S02 NE3514 NE3508M04 nec smd code m04 SMD TEXT
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Abstract: : 0.4dB NF, 14 dB Gain, high linearity 4 NE3509M04 GaAs FET: 0.4dB NF, 18dB Gain, high gain 4 , NE3509M04 /M14 NESG2031M05 NESG2031M05 NE662M04 NE662M04 NESG2031M05 NESG2031M05 NE3508M04 NE3508M04 NE3509M04 NE3509M14 NE3509M14 NE3510M04 NE3510M04 , 2.0 GHz 14.0 @ 2.0 GHz +18.0 M04 NE3509M04 GaAs HJ-FET 0.40 @ 2.0 GHz 17.5 @ 2.0 , NESG3033M14 NESG3033M14 SiGe HBT, 0.6 dB Noise Figure, 17.5 dB Gain @ 2.0 GHz, built-in ESD protection NE3509M04 , ) NE3503M04 NE3503M04 0.2 160 2 to 18 NE3508M04 NE3508M04 0.6 800 NE3509M04 0.6 400 NE3509M14 NE3509M14 0.6 ... California Eastern Laboratories
Original
datasheet

24 pages,
1202.74 Kb

NE5531 TEXT
datasheet frame
Abstract: NE3509M04 Low Noise GaAs FET Down-converter D/C 2SC5369 2SC5369(NE696M01 NE696M01) HJ-FET PC2756TB PC2756TB 6 , NE3508M04 NE3508M04 Feature GaAs HJ-FET NE3509M04 NE3509M14 NE3509M14 NESG3032M14 NESG3032M14 SiGe Tr. NESG3033M14 NESG3033M14 PC8230TU PC8230TU , 1575.42 MHz BPF NE3508M04 NE3508M04 2SC5507 2SC5507 NE3509M04 2SC5508 2SC5508 NE3509M14 NE3509M14 NESG3032M14 NESG3032M14 uPC2749TB uPC2749TB NESG3033M14 NESG3033M14 ... Renesas Electronics
Original
datasheet

42 pages,
675.5 Kb

NESG240033 2sc3356 2sc3357 NE3508 PG2054K SW SPDT NE3512 NE662M04 PG2179TB RF basics NE3514S02 NE5500234 upg2406t6r NE5510279A 2SC3357/NE85634 NE3515S02 CATV MODULATOR Microwave GaAs FET catalogue 2SC5508 UPC8236 TEXT
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Avago Cross Reference Results

Avago Part Cross Reference Type Manufacturer
MGA-645T6 Buy NE3509M04 Buy Close Equivalent NEC Electronics

CEL Cross Reference Results

CEL Part Industry Part Manufacturer Type Comments
NE3509M04-A Buy ALM1106 Buy Avago Closest Equivalent Super Low Noise Pseudomorphic HJ FET, RoHS compliant
NE3509M04-A Buy ATF-55143 Buy Avago Closest Equivalent Super Low Noise Pseudomorphic HJ FET, RoHS compliant
NE3509M04-A Buy BFP740 Buy Infineon Closest Equivalent Super Low Noise Pseudomorphic HJ FET, RoHS compliant
NE3509M04-A Buy CFY35 Buy Infineon Closest Equivalent Super Low Noise Pseudomorphic HJ FET, RoHS compliant
NE3509M04-A Buy FHC40LG Buy Fujitsu Closest Equivalent Super Low Noise Pseudomorphic HJ FET, RoHS compliant
NE3509M04-A Buy NE334S01 Buy NEC Closest Equivalent Super Low Noise Pseudomorphic HJ FET, RoHS compliant
NE3509M04-T2-A Buy NE34018 Buy NEC Closest Equivalent Super Low Noise Pseudomorphic HJ FET, RoHS compliant