NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| NE3509M04 | California Eastern Laboratories / NEC | L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
11 pages, |
Original | |
| NE3509M04 | California Eastern Laboratories / NEC | L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
9 pages, |
Original | |
| NE3509M04-A | California Eastern Laboratories / NEC | L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
11 pages, |
Original | |
| NE3509M04-T2 | California Eastern Laboratories / NEC | L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
9 pages, |
Original | |
| NE3509M04-T2 | California Eastern Laboratories / NEC | L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
11 pages, |
Original | |
| NE3509M04-T2-A | California Eastern Laboratories / NEC | L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
11 pages, |
Original | |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 NE3509M04-T2 Order Number NE3509M04-A NE3509M04-T2-A NE3509M04-T2B-A Package Flat-lead 4-pin thintype super minimold (M04) (Pb-Free , · Pin 1 (Source), Pin 2 (Drain) face the perforation side of the tape NE3509M04-T2B , : NE3509M04-A ABSOLUTE MAXIMUM RATINGS (T A = +25C) Parameter Drain to Source Voltage Gate to Source Voltage , HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL ... | Original |
9 pages, |
ne3509m04 marking v80 NE3509M04 NE3509M04 abstract |
| Abstract: NE3509M04 NE3509M04-A NE3509M04-T2 4 50 () NE3509M04-T2-A (M04) V80 8 mm 1 2 3 k / () 15 k / NE3509M04-T2B NE3509M04-T2B-A NE3509M04 , Hetero Junction Field Effect Transistor NE3509M04 N LS NF = 0.4 dB TYP., Ga = , 2005, 2008 NE3509M04 TA = 25°C MIN. TYP. MAX. VDS - 2 3 , ) VDS = 2 V, ID = 10 mA (Non-RF) f = 2 GHz 2 PG10608JJ02V0DS PG10608JJ02V0DS NE3509M04 TA = 25°C vs. ... | Original |
12 pages, |
NE3509M04-T2-A NE3509M04-T2 NE3509M04-A HS350 NE3509M04 datasheet abstract |
| Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel , HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL , evaluation samples, contact your nearby sales office. Part number for sample order: NE3509M04 ABSOLUTE , 2006 NS CP(K) NE3509M04 RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Symbol MIN. ... | Original |
9 pages, |
NE3509M04-T2-A NE3509M04-T2 NE3509M04-A NE3509M04 HS350 NE3509M04 abstract |
| Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel , DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER , evaluation samples, contact your nearby sales office. Part number for sample order: NE3509M04 ABSOLUTE , NS CP(K) Printed in Japan 2005, 2006 NE3509M04 RECOMMENDED OPERATING CONDITIONS (TA = +25°C ... | Original |
10 pages, |
NE3509M04-T2-A NE3509M04-T2 NE3509M04-A NE3509M04 HS350 nec v80 NE3509M04 abstract |
| Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04-T2B Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel) V80 type super minimold NE3509M04-T2B-A (M04) (Pb-Free , DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER , office. Part number for sample order: NE3509M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter ... | Original |
10 pages, |
nec v80 NEC Ga FET marking L NE3509M04-T2-A NE3509M04-T2 NE3509M04-A NE3509M04 HS350 NE3509M04 abstract |
| Abstract: microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04-T2B Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel) V80 type super minimold NE3509M04-T2B-A (M04) (Pb-Free , DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER , office. Part number for sample order: NE3509M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter ... | Original |
12 pages, |
NE3509M04-T2-A NE3509M04-A NE3509M04 HS350 NE3509M04-T2 datasheet abstract |
| Abstract: Quantity Marking NE3509M04 NE3509M04-A 50pcs (Non reel) NE3509M04-T2 NE3509M04-T2-A 3 , PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3509M04 L to S BAND , office. Part number for sample order: NE3509M04 ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C ) PARAMETER , 2005 CP(K) © NEC Compound Semiconductor Devices 2005 NE3509M04 RECOMMENDED OPERATING CONDITIONS , NE3509M04 TYPICAL CHARACTERISTICS TA = +25 °C) DRAIN CURRENT vs. GATE to SOURCE VOLTAGE 50 Mounted ... | Original |
11 pages, |
Power Transisitor 100V 2A cel 502 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A 0429 01 2701 00 NT 407 F a 933 transisitor NEC Ga FET marking L NE3509M04 abstract |
| Abstract: (NE69039 NE69039) 2SC5754 2SC5754 (NE664M04 NE664M04) PG2179TB PG2179TB HJ-FET 2SC5369 2SC5369 (NE696M01 NE696M01) NE3509M04 PC2756TB PC2756TB PC2757TB PC2757TB , 2 Tr. RF 1st 2nd PLL NE3508M04 NE3508M04 NE3509M04 NE3509M14 NE3509M14 NESG3032M14 NESG3032M14 NESG3033M14 NESG3033M14 , ) 26 GPS RX 1575.42 MHz BPF NE3508M04 NE3508M04 NE3509M04 2SC5507 2SC5507 NE3509M14 NE3509M14 2SC5508 2SC5508 NESG3032M14 NESG3032M14 ... | Original |
42 pages, |
PG2009TB PC3219GV 2SC5006 PC8236T6N PG2179TB 2SC3357/NE85634 NESG240033 PC3217GV NE3512 NE3517S03 2sc3357 NE3514 NE5510279A NESG2101 datasheet abstract |
| Abstract: NE3508M04 NE3508M04 0.6 800 1 to 6 2 2.0 10 NE3509M04 0.6 400 1 to 6 2 2.0 10 ... | Original |
2 pages, |
NE3503M04 NE27200 NE350184C MICRO-X NE3509M04 NE3510M04 NE3511S02 NE3512S02 NE3514S02 NE4210S01 NE321000 GHZ micro-X Package ne3210s01 GHZ micro-X ceramic Package NE27200 abstract |
| Abstract: NE3509M04 Low Noise GaAs FET Down-converter D/C 2SC5369 2SC5369(NE696M01 NE696M01) HJ-FET PC2756TB PC2756TB 6-pin , NE3509M04 NE3509M14 NE3509M14 NESG3032M14 NESG3032M14 SiGe Tr. NESG3033M14 NESG3033M14 PC8230TU PC8230TU SiGe:C MMIC PC8231TK PC8231TK PC8232T5N PC8232T5N , design. 26 System configuration example GPS RX 1575.42 MHz BPF NE3508M04 NE3508M04 2SC5507 2SC5507 NE3509M04 ... | Original |
42 pages, |
2sc3357 UPC3242TB 2sc3356 SW SPDT RF basics NESG2031M05 NE3517S03 NE3515S02 NE662M04 NE3514S02 NESG240033 NE3512 NE3508 NE5500234 datasheet abstract |
| Avago Part | Cross Reference | Type | Manufacturer |
| CEL Part | Industry Part | Manufacturer | Type | Comments |
| NE3509M04-A Buy | ALM1106 Buy | Avago | Closest Equivalent | Super Low Noise Pseudomorphic HJ FET, RoHS compliant |
| NE3509M04-A Buy | ATF-55143 Buy | Avago | Closest Equivalent | Super Low Noise Pseudomorphic HJ FET, RoHS compliant |
| NE3509M04-A Buy | BFP740 Buy | Infineon | Closest Equivalent | Super Low Noise Pseudomorphic HJ FET, RoHS compliant |
| NE3509M04-A Buy | CFY35 Buy | Infineon | Closest Equivalent | Super Low Noise Pseudomorphic HJ FET, RoHS compliant |
| NE3509M04-A Buy | FHC40LG Buy | Fujitsu | Closest Equivalent | Super Low Noise Pseudomorphic HJ FET, RoHS compliant |
| NE3509M04-A Buy | NE334S01 Buy | NEC | Closest Equivalent | Super Low Noise Pseudomorphic HJ FET, RoHS compliant |
| NE3509M04-T2-A Buy | NE34018 Buy | NEC | Closest Equivalent | Super Low Noise Pseudomorphic HJ FET, RoHS compliant |