500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
NE3509M04-A California Eastern Laboratories (CEL) AMP HJ-FET 2GHZ 4-SMINI visit Digikey Buy
NE3509M04-T2-A California Eastern Laboratories (CEL) AMP HJ-FET 2GHZ SOT-343 visit Digikey Buy

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : NE3509M04-EVNF24-A Supplier : California Eastern Laboratories Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : NE3509M04-T2-A Supplier : California Eastern Laboratories Manufacturer : Avnet Stock : 3,000 Best Price : - Price Each : -
Part : NE3509M04-T2-A Supplier : California Eastern Laboratories Manufacturer : Chip1Stop Stock : 2,372 Best Price : $0.7282 Price Each : $1.4086
Shipping cost not included. Currency conversions are estimated. 

NE3509M04 Datasheet

Part Manufacturer Description PDF Type
NE3509M04 California Eastern Laboratories L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original
NE3509M04 California Eastern Laboratories L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original
NE3509M04-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, AMP HJ-FET 2GHZ 4-SMINI Original
NE3509M04-A California Eastern Laboratories L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original
NE3509M04-EVNF24-A California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL DEV RF NE3509M04 Original
NE3509M04-T2 California Eastern Laboratories L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original
NE3509M04-T2 California Eastern Laboratories L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original
NE3509M04-T2-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, AMP HJ-FET 2GHZ SOT-343 Original
NE3509M04-T2-A California Eastern Laboratories L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original

NE3509M04

Catalog Datasheet MFG & Type PDF Document Tags

NEC Ga FET marking L

Abstract: a 933 transisitor NE3509M04 NE3509M04-A 50pcs (Non reel) NE3509M04-T2 NE3509M04-T2-A 3 Kpcs/reel V80 , PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3509M04 L to S BAND , for sample order: NE3509M04 ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C ) PARAMETER SYMBOL , 2005 CP(K) © NEC Compound Semiconductor Devices 2005 NE3509M04 RECOMMENDED OPERATING CONDITIONS , NE3509M04 TYPICAL CHARACTERISTICS TA = +25 °C) DRAIN CURRENT vs. GATE to SOURCE VOLTAGE 50 Mounted
California Eastern Laboratories
Original
NEC Ga FET marking L a 933 transisitor 0429 01 2701 00 NT 407 F NE3509 09 72 264 6801

NE3509M04

Abstract: NE3509M04-A NE3509M04 NE3509M04-A NE3509M04-T2 4 50 () NE3509M04-T2-A (M04) V80 8 mm 1 2 3 k / () 15 k / NE3509M04-T2B NE3509M04-T2B-A NE3509M04 , Hetero Junction Field Effect Transistor NE3509M04 N LS NF = 0.4 dB TYP., Ga = , 2005, 2008 NE3509M04 TA = 25°C MIN. TYP. MAX. VDS - 2 3 , ) VDS = 2 V, ID = 10 mA (Non-RF) f = 2 GHz 2 PG10608JJ02V0DS NE3509M04 TA = 25°C vs
NEC
Original
HS350 nec v80 IR260

transistor marking v80 ghz

Abstract: sdars lna microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel , HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL , evaluation samples, contact your nearby sales office. Part number for sample order: NE3509M04 ABSOLUTE , 2006 NS CP(K) NE3509M04 RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Symbol MIN
California Eastern Laboratories
Original
transistor marking v80 ghz sdars lna NE3509M04. S2P DSA0029112

nec v80

Abstract: NEC Ga FET marking L microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04-T2B Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel) V80 type super minimold NE3509M04-T2B-A (M04) (Pb-Free , DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER , office. Part number for sample order: NE3509M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter
NEC
Original
PG10608EJ02V0DS

transistor marking v80 ghz

Abstract: marking v80 microwave communication system ORDERING INFORMATION Part Number NE3509M04 NE3509M04-T2 Order Number NE3509M04-A NE3509M04-T2-A NE3509M04-T2B-A Package Flat-lead 4-pin thintype super minimold (M04) (Pb-Free , · Pin 1 (Source), Pin 2 (Drain) face the perforation side of the tape NE3509M04-T2B , : NE3509M04-A ABSOLUTE MAXIMUM RATINGS (T A = +25C) Parameter Drain to Source Voltage Gate to Source Voltage , HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL
California Eastern Laboratories
Original
marking v80 m04 marking

nec v80

Abstract: NE3509 microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel , DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER , evaluation samples, contact your nearby sales office. Part number for sample order: NE3509M04 ABSOLUTE , NS CP(K) Printed in Japan 2005, 2006 NE3509M04 RECOMMENDED OPERATING CONDITIONS (TA = +25°C
NEC
Original

NE3509M04. S2P

Abstract: NE3509M04 microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04-T2B Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel) V80 type super minimold NE3509M04-T2B-A (M04) (Pb-Free , . DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER , office. Part number for sample order: NE3509M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter
NEC
Original

ic isl 887

Abstract: 2SC5508 (NE69039) 2SC5754 (NE664M04) PG2179TB HJ-FET 2SC5369 (NE696M01) NE3509M04 PC2756TB PC2757TB , 2 Tr. RF 1st 2nd PLL NE3508M04 NE3509M04 NE3509M14 NESG3032M14 NESG3033M14 , ) 26 GPS RX 1575.42 MHz BPF NE3508M04 NE3509M04 2SC5507 NE3509M14 2SC5508 NESG3032M14
Renesas Electronics
Original
NESG2031M05 ic isl 887 NE3514 SW SPDT NE3515S02 PG2179 NE5510279A NE662M04 NESG2031M16 NE55410GR NEM090303M-28 NEM090603M-28

m04 SMD

Abstract: nec smd code NE3508M04 0.6 800 1 to 6 2 2.0 10 NE3509M04 0.6 400 1 to 6 2 2.0 10
California Eastern Laboratories
Original
NE27200 NE321000 NE4210S01 NE3503M04 NE3510M04 NE3511S02 m04 SMD nec smd code NE3512S02 NE2720 GHZ micro-X Package NE3210S01

SMD M05 sot23

Abstract: A3 smd sot-343 : 0.4dB NF, 14 dB Gain, high linearity 4 NE3509M04 GaAs FET: 0.4dB NF, 18dB Gain, high gain 4 , NE3509M04 /M14 NESG2031M05 NE662M04 NESG2031M05 NE3508M04 NE3509M04 NE3509M14 NE3510M04 , 2.0 GHz 14.0 @ 2.0 GHz +18.0 M04 NE3509M04 GaAs HJ-FET 0.40 @ 2.0 GHz 17.5 @ 2.0 , NESG3033M14 SiGe HBT, 0.6 dB Noise Figure, 17.5 dB Gain @ 2.0 GHz, built-in ESD protection NE3509M04 , ) NE3503M04 0.2 160 2 to 18 NE3508M04 0.6 800 NE3509M04 0.6 400 NE3509M14 0.6
California Eastern Laboratories
Original
SMD M05 sot23 A3 smd sot-343 nE352 NE5531 2013/4M

UPC8236

Abstract: 2SC5508 NE3509M04 Low Noise GaAs FET Down-converter D/C 2SC5369(NE696M01) HJ-FET PC2756TB 6 , NE3508M04 Feature GaAs HJ-FET NE3509M04 NE3509M14 NESG3032M14 SiGe Tr. NESG3033M14 PC8230TU , 1575.42 MHz BPF NE3508M04 2SC5507 NE3509M04 2SC5508 NE3509M14 NESG3032M14 µPC2749TB NESG3033M14
Renesas Electronics
Original
UPC8236 upg2406t6r 2SC3357/NE85634 CATV MODULATOR Microwave GaAs FET catalogue UPG2406T R09CA0001EJ0100 PX10020EJ42V0PF

UPC8236

Abstract: 2SC5508 HJ-FET NE3509M04 Low Noise GaAs FET Down-converter PC2756TB 6-pin Super Minimold , Name NE3508M04 Feature GaAs HJ-FET NE3509M04 NESG3032M14 SiGe Tr. NESG3033M14 PC8230TU , NE3508M04 2SC5507 NE3509M04 NESG3032M14 2SC5508 NESG3033M14 µPC2749TB µPC8230TU µPC8231TK µPC8232T5N
NEC
Original
digital tv tuner hjfet NESG240033 ANTENNA parabolic antenna for microwave CATV materials NESG270034 PX10020EJ39V0PF G0706

2SC5508

Abstract: UPC3243 Function Type Name Feature Discrete Tr. High fT, Low Noise NE3509M04 Low Noise GaAs FET , NE3509M04 NE3509M14 NESG3032M14 SiGe Tr. NESG3033M14 PC8230TU SiGe:C MMIC PC8231TK PC8232T5N , NE3509M04 2SC5508 NE3509M14 NESG3032M14 µPC2749TB NESG3033M14 µPC8230TU µPC8231TK µPC8232T5N
Renesas Electronics
Original
UPC3243 transistor 20107 NE3517S03 UPC3240 NE3508 2SC4226 APPLICATION NOTES R09CA0001EJ0300

mobile phone basic block diagram

Abstract: PG2158T5K Feature 2SC5369(NE696M01) High fT, Low Noise HJ-FET NE3509M04 Low Noise GaAs FET , Function 1st stage Type Name NE3508M04 Feature GaAs HJ-FET NE3509M04 NE3509M14 NESG3032M14 , NE3508M04 2SC5507 NE3509M04 2SC5508 NE3509M14 NESG3032M14 µPC2749TB NESG3033M14 µPC8230TU µPC8231TK
NEC
Original
mobile phone basic block diagram PG2158T5K microwave Duplexer UPG2156 2sc3356 electronics basics PX10020EJ41V0PF

SMD transistor M05

Abstract: smd TRANSISTOR code m05 NESG3032M14 NE3509M04 /M14 NESG2031M05 NE662M04 NESG2031M05 - NE3508M04 NE3509M04 NE3510M04 , GHz 14.0 @ 2.0 GHz +18.0 M04 NE3509M04 / M14 GaAs HJ-FET 0.40 @ 2.0 GHz 17.5 @ , M04 Plastic SMD D NE3509M04 0.6 400 0.1 to 6 2 2.0 10 0.45 17.5 3.0
California Eastern Laboratories
Original
SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd 10/2M

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 MMIC 20 NE3509M04 HJ-FET NE3508M04 HJ-FET 15 0.2 0 PC8211TK SiGe MMIC PC8230TU , NESG3031M14 SiGe HBT NE3509M04 HJ-FET NESG2031M05 SiGe HBT 15 NE3508M04 HJ-FET 10 0 0.2
NEC
Original
nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram marking code C1H mmic PX10727EJ02V0PF

FET marking code g5d

Abstract: PG2179TB NESG2021M05 SiGe HBT PC8233TK SiGe:C MMIC PC8236T6N SiGe:C MMIC 20 NE3509M04 HJ-FET NE3508M04 , 20 NE3510M04 HJ-FET NESG2021M05 SiGe HBT NESG3031M05 NESG3031M14 SiGe HBT NE3509M04 , ., HJ-FET 2 10 2 000 0.45 2 14 2 F4TSMM NE3509M04 GPS, GaAs, LNA, etc., HJ-FET
Renesas Electronics
Original
marking code C3E SOT-89 marking code C1E mmic PG2163T5N sot-23 g6g PD5713TK 2SC5431 R09CL0001EJ0100

ne3511s02 s2p

Abstract: ne3512s02 s2p to 6 2 2.0 10 0.40 14.0 3.0 30 18.0 M04 Plastic SMD D NE3509M04
California Eastern Laboratories
Original
ne3511s02 s2p ne3512s02 s2p SMD M05 sot UPG2162T5N S06 SMD UPG2250T5N 07/2M

mc10087f1

Abstract: mc-10041 Number N413 NE3210S01 NE350184C NE3503M04 NE3508M04 NE3509M04 NE3510M04 NE3511S02 NE3512S02
-
Original
mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 2SC5664 2002/95/EC 03P2J 03P2M 03P4J 03P4M 03P4MF
Showing first 20 results.