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Part : NDP7061 Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 5,896 Best Price : $2.37 Price Each : $2.91
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NDP7061 Datasheet

Part Manufacturer Description PDF Type
NDP7061 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original
NDP7061 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original
NDP7061 Toshiba Power MOSFETs Cross Reference Guide Original
NDP7061 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan
NDP7061L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original
NDP7061L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original
NDP7061L Toshiba Power MOSFETs Cross Reference Guide Original
NDP7061L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan
NDP7061L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan

NDP7061

Catalog Datasheet MFG & Type PDF Document Tags

T64A

Abstract: NDB7061 N NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor May 1996 General , Parameter NDP7061 NDB7061 Units v "res Drain-Source Voltage 60 V V "dgr Drain-Gate Voltage < 1 MQ) 60 V , temperature for soldering purposes, 1/8" from case for 5 seconds 275 °c NDP7061 Rev. C / NDB7061 Rev. D , Charge 37.5 nC NDP7061 Rev. C / NDB7061 Rev. D Electrical Characteristics (Tc = 25 °C , /W Note: 1. Pulse Test: Pulse Width < 300 (is, Duty Cycle < 2.0%. NDP7061 Rev. C / NDB7061 Rev. D
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OCR Scan
T64A T0-220
Abstract: May 1996 N NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General , SS T c = 2 5 ^0 unless otherw ise noted NDP7061 60 60 ±20 ±40 64 190 130 0.87 -65 to 175 275 , seconds \ °c NDP7061 Rev. C / NDB7061 Rev D Electrical Characteristics Symbol Parameter w , V 67 11 37.5 NDP7061 Rev. C / NDB7061 Rev D Electrical Characteristics (Tc= 2 5 cCunless , Test: Pulse W idth < 300 |i£, Duty Cycle < 2.0%. NDP7061 Rev. C / NDB7061 Rev D NDP7061 Rev. C -
OCR Scan
263AB
Abstract: May 1996 N NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General , 0.87 W/G -65 to 175 °C 275 °C NDP7061 Rev. C / NDB7061 Rev. D Electrical , NDP7061 Rev. C / NDB7061 Rev. D Electrical Characteristics (Tc = 25 °C unless otherwise noted) Sym b , ^ e iA N ote: 1. Pulse Test: Pulse Width < 300 ps, Duty Cycle < 2.C NDP7061 Rev. C / NDB7061 , Variation with Temperature NDP7061 Rev. C / NDB7061 Rev. D Typical Electrical Characteristics -
OCR Scan

transistor FS 18 SM

Abstract: June 1996 N NDP7061 L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor , otherw ise noted NDP7061L 60 60 ±16 ±25 60 180 130 0.87 -65 to 175 NDB7061 L Units V V V A W W/ , 430 63 240 52 9 28 35 600 120 400 75 nS nS nS nS nC nC nC NDP7061 L Rev Cl Electrical , o1e: 1.15 62.5 ÜW ÜW 1. PulseTest: Pulse Widlh < 30 0 |as, Duty Cycle < 2.0% NDP7061 L Rev
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OCR Scan
transistor FS 18 SM

64a through hole diode

Abstract: NDB7061 N May 1996 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General , NDP7061 NDB7061 Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS , -65 to 175 °C 275 °C NDP7061 Rev. C / NDB7061 Rev. D Electrical Characteristics (T , , VGS = 10 V 11 nC 37.5 nC NDP7061 Rev. C / NDB7061 Rev. D Electrical Characteristics , /W Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP7061 Rev. C / NDB7061 Rev
National Semiconductor
Original
64a through hole diode

zener diode 3.0 b2

Abstract: zener diodes color coded May 1996 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General , Parameter NDP7061 VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS < 1 M , NDP7061 Rev. C / NDB7061 Rev. D Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol , 64 A, VGS = 10 V, RGEN = 5 150 nS 67 100 nC 11 nC 37.5 nC NDP7061 Rev , , Junction-to-Ambient 62.5 °C/W Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP7061 Rev
Fairchild Semiconductor
Original
zener diode 3.0 b2 zener diodes color coded CBVK741B019 EO70 F63TNR FDP7060

CBVK741B019

Abstract: EO70 May 1996 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General , Parameter NDP7061 VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS < 1 M , NDP7061 Rev. C / NDB7061 Rev. D Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol , 64 A, VGS = 10 V, RGEN = 5 150 nS 67 100 nC 11 nC 37.5 nC NDP7061 Rev , , Junction-to-Ambient 62.5 °C/W Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP7061 Rev
Fairchild Semiconductor
Original
L86Z NDP4060L

NDB7061L

Abstract: NDP7061 June 1996 N NDP7061 L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect , Parameter NDP7061 L NDB7061L Units v "res Drain-Source Voltage 60 V V "dgr Drain-Gate Voltage < 1 MQ) 60 , 'C 0.87 W/ , NDP7061L Rev.Cl Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS , , Junction-to-Ambient 62.5 ÃW Note: 1. Pulse Test: Pulse Width < 300 (is, Duty Cycle < 2.C NDP7061L Rev.Cl
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OCR Scan
125-C

LD 8105

Abstract: NDB7061 J^J National May 1996 m^J Semiconductorm NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field â'¢ 64A, 60V. RDS(0N1 = 0.016£2@ VGS= 10V. effect transistors are produced using National's . Critica| DC electrical parameters specified at proprietary, high cell density, DMOS technology. elevated temperature , Ratings Tc = 25°C unless otherwise noted Symbol Parameter NDP7061 NDB7061 Units Vcss Drain-Source
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OCR Scan
LD 8105 d0403 D04031L

mosfet cross reference

Abstract: SMP40N06 SMP60N06 NDP7061 TO-220, N Si6968DQ^ NDH8303N TSSOP-8, Dual N SMP60N06-14 NDP7061L , IRF1010E NDP7061L TO-220, N IRF7309 FDS8958A SO-8, Comp N/P IRF1010N NDP7060L TO , Recommended Part Number Fairchild Device NDP7061 NDP7061 TO-220, N NDS9435A FDS9435A NDP7061L NDP7061L TO-220, N NDS9925A NDS9925A SO-8, Dual N NDP708A NDP708A TO , TO-220, N Si9802DY NDS9925A SO-8, Dual N SUP60N06-18 NDP7061 TO-220, N Si9803DY
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Original
IRF7206 IRF7303 SUP40N06-25L mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY IRFZ44 TO-263 SMP60N03-10L 2N7000 IRF7203 2N7002 IRF7204 NDS8434A BS170
Abstract: June 1996 N NDP7061 L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode p ow er field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide , 25°C unless otherwise noted Symbol Parameter NDP7061L NDB7061L Units v VDSS -
OCR Scan
P7061L

IRFZ44N complementary

Abstract: IRF3205 COMPLEMENTARY HUF75343P3 NBP6050 NBP6060 NDB7050 NDB7061 NDP6050 NDP6060 NDP7050 NDP7061 TO-263 TO-263 TO-263 TO
Harris Semiconductor
Original
BUK7530-55A BUZ102S BUZ110S IRFZ34N HRF3205 HUF75329P3 IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application IRF3205 TO-220 philips 435-2 BUK7508-55 BUK7514-55A BUK7524-55A BUK7570-55A BUZ100S

12SnOFC

Abstract: BQ37 ISL9N302AP3 ISL9N306AP3 ISL9N310AP3 ISL9N7030BLP3 NDP4050L NDP6020P NDP603AL NDP7050 NDP7061
Fairchild Semiconductor
Original
FDP3672 12SnOFC BQ37 PMC-90 MKT-TO220B03 PMC-90 leadframe material 22-A102 JESD22-A104 JESD22A110-B JESD22A-101 JESD22-A105 JESD22-A108

fqp60n06

Abstract: SSH6N80 NDP410A NDP5060 NDP510A NDP603AL NDP6060 NDP6060L NDP610A NDP7060 NDP7061 NDP708A NDS8410
STMicroelectronics
Original
fqp60n06 SSH6N80 spb32N03l SSP80N06A IRF540 application rfp60n06 STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L

SSH6N80

Abstract: rfp60n06 NDP603AL NDP6060 NDP6060L NDP610A NDP7060 NDP7061 NDP708A NDS8410 NDS8410A NDS8410S NDS8936
STMicroelectronics
Original
2SK2717 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A STMicroelectronics BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A

fqp60n06

Abstract: spb32N03l NDP410A NDP5060 NDP510A NDP603AL NDP6060 NDP6060L NDP610A NDP7060 NDP7061 NDP708A NDS8410
STMicroelectronics
Original
FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 HGTG*N60A4D irf630 irf640 YTAF630 STP80NE03L-06 STS4DPF30L STB70NF03L STB55NF03L STW18NB40 STS8NFS30L

SSP35n03

Abstract: bc417 /NDP7052L NDB/NDP7060 NDB/NDP7060L NDB/NDP7061 NDB/NDP7061L NDB/NDP708A NDB/NDP710A NDC631N NDC632P
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Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp N June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect , NDP7061L NDB7061L Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS , Operating and Storage Temperature Range NDP7061L Rev.C1 Electrical Characteristics (T C Symbol , 60 A , VGS = 5 V 18 400 nS 52 75 nC 9 nC 28 nC NDP7061L Rev.C1 , /W Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP7061L Rev.C1 Typical
Fairchild Semiconductor
Original
ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 S-112 F-91742
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