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Part : NDP5060 Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 1,080 Best Price : - Price Each : -
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NDP508A Datasheet

Part Manufacturer Description PDF Type
NDP508A Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original
NDP508A Toshiba Power MOSFETs Cross Reference Guide Original
NDP508A National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan
NDP508A National Semiconductor TO-220AB DMOS Power MOSFETS Scan
NDP508AE Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original
NDP508AE National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan
NDP508AE National Semiconductor TO-220AB DMOS Power MOSFETS Scan
NDP508AEL National Semiconductor TO-220AB Logic Level DMOS Power MOSFETS Scan
NDP508AL National Semiconductor TO-220AB Logic Level DMOS Power MOSFETS Scan

NDP508A

Catalog Datasheet MFG & Type PDF Document Tags

57A5-1

Abstract: P A IR C H II- D M IC D N D U C T Q R i May 1994 NDP508A / NDP508AE / NDP508B / NDP508BE , Voltage - Continuous - Nonrepetitive (tP< 50 |os) NDP508A NDP508AE NDB508A NDB508AE 80 80 120 ±40 19 57 , NDP508AE NDB508A NDB508AE NDP508B NDP508BE NDB508B NDB508BE NDP508A NDP508AE NDB508A NDB508AE NDP508B , Drain-Source Diode Forward Current NDP508A NDP508AE NDB508A NDB508AE NDP508B NDP508BE NDB508B NDB508BE 57 , Current NDP508AE NDP508BE NDB508AE NDB508BE 55 19 mJ A OFF CHARACTERISTICS b v dss
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OCR Scan
57A5-1 NDP508

NDP508BE

Abstract: NDB508A May 1994 NDP508A / NDP508AE / NDP508B / NDP508BE NDB508A / NDB508AE / NDB508B / NDB508BE , . D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted NDP508A NDP508AE , 0.2 NDP508A NDP508AE NDB508A TJ = 125°C NDB508AE NDP508B NDP508BE NDB508B TJ = 125°C NDB508BE Forward Transconductance NDP508A NDP508AE NDB508A NDB508AE 19 A NDP508B , Current A 17 A NDP508A NDP508AE NDB508A NDB508AE Maximum Pulsed Drain-Source Diode
Fairchild Semiconductor
Original

NDB508A

Abstract: NDB508AE May 1994 N NDP508A / NDP508AE / NDP508B / NDP508BE NDB508A / NDB508AE / NDB508B / NDB508BE , Maxi mum Rati n gs Tc = 25°C unless otherwise noted Symbol Parameter NDP508A NDP508AE NDB508A , 1.4 2.3 3.6 V ^ds(on) Static Drain-Source On-Resistance VGS = 10V, lD = 9.5 A NDP508A NDP508AE , NDP508A NDP508AE NDB508A NDB508AE 19 A NDP508B NDP508BE NDB508B NDB508BE 17 A 9fs Forward , Drain-Source Diode Forward Current NDP508A NDP508AE NDB508A NDB508AE 57 A NDP508B NDP508BE NDB508B
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OCR Scan
T0-220
Abstract: May 1994 N NDP508A / NDP508AE / NDP508B / NDP508BE NDB508A / NDB508AE / NDB508B / NDB508BE , Transconductance NDP508A NDP508AE NDB508A NDB508AE 19 A NDP508B NDP508BE NDB508B NDB508BE ^D(on) On-State Drain Current 4 NDP508A NDP508AE NDB508A NDB508AE TJ = 125â'˜C B , Current ls = 9.5 A A 17 A NDP508A NDP508AE NDB508A NDB508AE Maximum Pulsed , Continuos Drain-Source Diode Forward Current NDP508A NDP508AE NDB508A NDB508AE NDP508B NDP508BE -
OCR Scan

508B C

Abstract: NDB508A N May 1994 NDP508A / NDP508AE / NDP508B / NDP508BE NDB508A / NDB508AE / NDB508B / NDB508BE , . D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted NDP508A NDP508AE , 0.057 0.08 0.097 0.16 0.1 0.2 NDP508A NDP508AE NDB508A TJ = 125°C NDB508AE NDP508B NDP508BE NDB508B TJ = 125°C NDB508BE Forward Transconductance NDP508A NDP508AE , Reverse Recovery Time Irr Reverse Recovery Current A 17 A NDP508A NDP508AE NDB508A
National Semiconductor
Original
508B C

NDP505A

Abstract: NDP705AE NDP608AE 42 18/10 36 100 NDP608B NDP608BE 45 16/10 32 NDP508A NDP508AE 80 9.5/10 19 60 NDP508B
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OCR Scan
NDP710A NDP710AE NDP710B NDP710BE NDP610A NDP610AE NDP505A NDP705AE NDP605A NDP510A NDP510AE NDP510B

mosfet cross reference

Abstract: SMP40N06 NDB7060 TO-263, N NDP508A NDP508A TO-220, N NDB7060L NDB7060L TO-263, N NDP510A , -10 NDP508A TO-220, N Si9934DY FDS8934A SO-8, Dual P SUP75P03-08 NDP6030PL TO-220, P
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Original
IRF7206 IRF7303 SUP40N06-25L mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY IRFZ44 TO-263 SMP60N03-10L 2N7000 IRF7203 FDS9435A 2N7002 IRF7204 NDS8434A

ndp706b

Abstract: PWM power motor driver available. Part NDP706A NDP706B NDP708A NDB708A NDP606A NDP606B NDP608A NDB608A NDP508A NDB508A NDP408A
National Semiconductor
Original
PWM power motor driver NDS9945 LM9061 CSP-9-111C2 CSP-9-111S2

20W Solenoid Driver

Abstract: LM9061 -220 NDP608A 36A 80V 0.042 TO-220 NDB608A 36A 80V 0.042 TO-263 NDP508A 19A
National Semiconductor
Original
20W Solenoid Driver LM9061M LM9061N M08A MOSFETs Application Hints mosfet uA

NDS9945

Abstract: 20W Solenoid Driver 80V 0 042X TO-220 NDB608A 36A 80V 0 042X TO-263 NDP508A Figure 8 shows a
National Semiconductor
Original
5V GATE TO SOURCE VOLTAGE MOSFET Automatic Valve Systems parallel mosfet parallel MOSFET Transistors all mosfet power cgs resistor

014 IR MOSFET Transistor

Abstract: multiple mosfet gate driver devices available. Part NDP706A NDP706B NDP708A NDB708A NDP606A NDP606B NDP608A NDB608A NDP508A
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OCR Scan
014 IR MOSFET Transistor multiple mosfet gate driver mfha M1-41 5D1124
Abstract: transition time. Part NDP706A NDP706B NDP708A NDB708A NDP606A NDP606B NDP608A NDB608A NDP508A NDB508A National Semiconductor
Original

SSP35n03

Abstract: bc417 NDB/NDP5060 NDB/NDP5060L NDB/NDP508A NDB/NDP510A NDB/NDP6020 NDB/NDP6020P NDB/NDP6030 NDB
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Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp DP708AL N 0P 708BEL N DP708BL NDP608AEL NDP608AL NDP608BEL N DP608BL NDP508AEL NDP508AL NDP508BEL NDP508BL
Fairchild Semiconductor
Original
ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 S-112 F-91742

YTA630

Abstract: MTW14P20 NDP708BL 25 18/5 52 NDP608AEL NDP608AL 42 18/5 36 100 NDP608BEL NDP608BL 45 16/5 32 NDP508AEL NDP508AL 80 9.5/5 19 60 NDP508BEL NDP508BL 100 8.5/5 17 NDP408AEL NDP408AL 160 5.5/5 11 40 NDP408BEL
Toshiba
Original
YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407