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Part : NDF0610 Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 18,000 Best Price : - Price Each : -
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NDF0610 Datasheet

Part Manufacturer Description PDF Type
NDF0610 Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original
NDF0610 Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original
NDF0610 Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original
NDF0610 National Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original
NDF0610 Toshiba Power MOSFETs Cross Reference Guide Original
NDF0610 National Semiconductor P-Channel Enhancement Mode Field Effect Transistor Scan

NDF0610

Catalog Datasheet MFG & Type PDF Document Tags

NDF0610

Abstract: NDS0610 N April 1995 NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General , NDF0610 NDS0610 Units VDSS Drain-Source Voltage -60 V VDGR Drain-Gate Voltage (RGS , Resistance, Junction-to-Ambient 200 350 °C/W NDF0610 Rev. B / NDS0610 Rev. A ELECTRICAL , Cycle < 2.0%. NDF0610 Rev. B / NDS0610 Rev. A Typical Electrical Characteristics VGS = -10V , Temperature NDF0610 Rev. B / NDS0610 Rev. A 1.15 1.5 I D = -10µA -IS , REVERSE DRAIN CURRENT
National Semiconductor
Original
Abstract: April 1995 N NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using , ) SO T-23 Absolute Maximum RatingsTA= 25°C unless otherwise noted Symbol Parameter NDF0610 , (V) Figure 13. NDS0610 (SOT-23) Maximum Safe Operating Area. Figure 12. NDF0610 (TO-82) Maximum Safe Operating Area. tv TIME (sec) Figure 14. NDF0610 (TO-82) Transient Thermal Response -
OCR Scan
NDS061
Abstract: FAIRCHILD :m ic d n d u c t o r April 1 9 9 5 TM NDF0610 / NDS0610 P-Channel Enhancement , - | J D TO -92 NDF0610 Absolute Maximum Ratings Symbol ^D S S T, = 25°C unless otherwise noted NDF0610 -60 -60 420 ±30 -0.18 -1 0.8 5 -55 to 150 300 0.36 2.9 W mW/°C -0.12 NDS0610 Units V V V V A , 12. NDF0610 (TO-92) Maximum Safe Operating Area Figure 13. NDS0610 (SOT-23) Maximum Safe Operating Area , TIME (sec) Figure 14. NDF0610 (TO-92) Transient Thermal Response Curve. t1, TIME (sec -
OCR Scan
S0610

transistor wd sot-23

Abstract: B5G1 National Semiconductorm Aprii 1995 NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect , -23 packages for both through hole and surface mount applications â  High saturation current TO-92 NDF0610 , NDF0610 NDS0610 Units Voss Drain-Source Voltage -60 V Vdgr Drain-Gate Voltage (RÅ" < 1 Mii) -60 V V , ) 5 10 20 30 - VDS, DRAIN-SOURCE VOLTAGE (V) 60 80 Figure 12. NDF0610 (TO-92) Maximum Safe , Operating Area Duty Cycle, D = t, /I2 J j-Li-.; _ i .LLLulL. _ 10 300 Figure 14. NDF0610 (TO
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OCR Scan
transistor wd sot-23 B5G1 SG1130 5G113D

NDF0610

Abstract: NDS0610 April 1995 NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General , S D G S G D S TO-92 NDF0610 SOT-23 NDS0610 G D Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter NDF0610 VDSS Drain-Source , VOLTAGE (V) 60 80 Figure 13. NDS0610 (SOT-23) Maximum Safe Operating Area Figure 12. NDF0610 (TO , 14. NDF0610 (TO-92) Transient Thermal Response Curve. r(t), NORMALIZED EFFECTIVE TRANSIENT
Fairchild Semiconductor
Original

nos0610

Abstract: NDF0610 N April 1995 NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using National , °C unless otherwise noted Symbol Parameter NDF0610 NDS0610 Units VDSS Drain-Source Voltage -60 V ^dgr , VOLTAGE (V) Figure 12. NDF0610 (TO-92) Maximum Safe Operating Area. 5 10 20 30 60 8 -VDS , 200 c/w Duty Cycle, D = t1 /t2 Figure 14. NDF0610 (TO-92) Transient Thermal Response Curve. § lu
-
OCR Scan
nos0610

siemens transistor t2

Abstract: NDF0610 N April 1995 NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using , NDF0610 NDS0610 Units VDSS Drain-Source Voltage -60 V VDGR Drain-Gate Voltage (RGS , (SOT-23) Maximum Safe Operating Area. Figure 12. NDF0610 (TO-92) Maximum Safe Operating Area. r , 0.001 0.01 0.1 t 1, TIME (sec) 1 10 100 300 Figure 14. NDF0610 (TO-92) Transient
National Semiconductor
Original
siemens transistor t2

NDS0610

Abstract: NDF0610 April 1995 NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General , S D G S D G S SOT-23 NDS0610 G TO-92 D NDF0610 Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter NDF0610 NDS0610 Units VDSS , Figure 13. NDS0610 (SOT-23) Maximum Safe Operating Area Figure 12. NDF0610 (TO-92) Maximum Safe , . NDF0610 (TO-92) Transient Thermal Response Curve. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL
Fairchild Semiconductor
Original

CBVK741B019

Abstract: F63TNR April 1995 NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General , S D G S D G S SOT-23 NDS0610 G TO-92 D NDF0610 Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter NDF0610 NDS0610 Units VDSS , Figure 13. NDS0610 (SOT-23) Maximum Safe Operating Area Figure 12. NDF0610 (TO-92) Maximum Safe , . NDF0610 (TO-92) Transient Thermal Response Curve. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL
Fairchild Semiconductor
Original
CBVK741B019 F63TNR PN2222N

ISS 98

Abstract: April 1995 NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General , S D G S D G S SOT-23 NDS0610 G TO-92 NDF0610 D Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted NDF0610 NDS0610 Units VDSS VDGR VGSS ID , Figure 12. NDF0610 (TO-92) Maximum Safe Operating Area Figure 13. NDS0610 (SOT-23) Maximum Safe , 0.001 0.01 0.1 t 1, TIME (sec) 1 10 100 300 Figure 14. NDF0610 (TO-92) Transient
Fairchild Semiconductor
Original
ISS 98

mosfet cross reference

Abstract: SMP40N06 -220, N NDC7003P NDC7003P SSOT-6, Dual P NDP6060 NDP6060 TO-220, N NDF0610 NDF0610
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Original
IRF7206 IRF7303 SUP40N06-25L mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY IRFZ44 TO-263 SMP60N03-10L 2N7000 IRF7203 FDS9435A 2N7002 IRF7204 NDS8434A

KDS 32kHZ crystal

Abstract: opti 82c602 NDF0610 P-Channel MOSFET 57 RTCVCC The MOSFET used for testing at OPTi is a National Semiconductor NDF0610, which has a typical gate threshold voltage of -2.4V (-3.5V max / -1V min). 82C602
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Original
82C463MV 82C465MV KDS 32kHZ crystal opti 82c602 mc146818B ppm kds 5 a 32,768Khz FS 8860 IRQ14 IRQ12 IRQ10 IRQ15

H11AB17A

Abstract: wlo4f Q2 NDF0610 3T UC3909 2 D4 1N4148 RTHM VLOGIC Q3 2N3904 3 + OI-A 6
Unitrode
Original
H11AB17A wlo4f uc3906 Battery 12v uc3906 Design Seminar Data Handbook MA01 3M 5413 U-166

SSP35n03

Abstract: bc417 NDC651N NDC652P NDC7001C NDC7002N NDC7003P NDF0610 NDH8301N NDH8302P NDH8303N NDH8304P NDH831N
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Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA
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