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Part : NDC631N Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 11,785 Best Price : $0.18 Price Each : $0.22
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NDC631N Datasheet

Part Manufacturer Description PDF Type
NDC631N Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original
NDC631N National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original
NDC631N National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original
NDC631N National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original
NDC631N Toshiba Power MOSFETs Cross Reference Guide Original
NDC631N National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan
NDC631N_D87Z Fairchild Semiconductor Transistor Mosfet N-CH 20V 4.1A 6SSOT T/R Original

NDC631N

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ^ T July 1996 N NDC631N N-Channel Logic Level Enhancement Mode Field Effect Transistor , otherwise note Symbol Parameter NDC631N Units VD ss Drain-Source Voltage 20 V ^G SS , Thermal Resistance, Junction4o-Case (N 1 ote ) 30 °C/W NDC631N R0V.D1 ELECTRICAL , , d V qen = 4.5 V, Rq n = 6 £2 e 15 ns 10 14 nC 1 nC 3.3 nC NDC631N , : Pulse W idth < 300ps, Duty C ycle < 2.0%. NDC631N Rev.DI Typical Electrical Characteristics 0 -
OCR Scan

NDC631N

Abstract: N NDC631N N-Channel Logic Level Enhancement Mode Field Effect Transistor July 1996 General , NDC631N Units Vâ'ž Drain-Source Voltage 20 Gate-Source Voltage -Continuous Drain Current -Continuous , (Note 1 ) 30 °C/W NDC631N Rev.DI ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , = 4.1 A, VQS = 4.5 V 1 nC Qgd Gate-Drain Charge 3.3 nC NDC631N Rev.DI ELECTRICAL , letter size paper 2. Pulse Test: Pulse Width < 300|js, Duty Cycle < 2.0%. NDC631N Rev.DI Typical
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OCR Scan

CBVK741B019

Abstract: F63TNR July 1996 NDC631N N-Channel Logic Level Enhancement Mode Field Effect Transistor General , Parameter NDC631N Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage - , (Note 1) 30 °C/W © 1997 Fairchild Semiconductor Corporation NDC631N Rev.D1 ELECTRICAL , 14 nC 1 nC 3.3 nC NDC631N Rev.D1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless , : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDC631N Rev.D1
Fairchild Semiconductor
Original
CBVK741B019 F63TNR FDC633N

NDC631N

Abstract: N July 1996 NDC631N N-Channel Logic Level Enhancement Mode Field Effect Transistor , Parameter NDC631N Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage - , (Note 1) 30 °C/W NDC631N Rev.D1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise , 3.3 nC NDC631N Rev.D1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol , paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDC631N Rev.D1 Typical Electrical
National Semiconductor
Original

NDC631N

Abstract: July 1996 NDC631N N-Channel Logic Level Enhancement Mode Field Effect Transistor General , Parameter NDC631N Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage - , (Note 1) 30 °C/W © 1997 Fairchild Semiconductor Corporation NDC631N Rev.D1 ELECTRICAL , 14 nC 1 nC 3.3 nC NDC631N Rev.D1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless , : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDC631N Rev.D1
Fairchild Semiconductor
Original
Abstract: P A I R C H I I - D July 1996 M ICDNDUCTQ R ! NDC631N N-Channel Logic Level , otherw ise note NDC631N 20 Units V, Drain-Source Voltage Gate-Source Voltage - Continuous , ) ©1 9 9 7 Fairchild Sem iconductor Corporation NDC631N Rev.DI ELECTRICAL CHARACTERISTICS Symbol , 9 25 28 17 45 50 15 14 ns ns ns ns nC nC nC Qg Qgs Q gd 8 10 1 3.3 NDC631N Rev.DI , letter size paper 2. Pulse Test: Pulse W idth < 300ns, Duty Cycle < 2.0%. NDC631N Rev.DI Typical -
OCR Scan

Siliconix

Abstract: Siliconix mosfet guide FDZ5047N FDN335N FDN361AN NDS352AP NDS332P FDN304P NDC651N NDC631N NDC652P NDC632P FDN359AN FDN361AN FDN360P FDN360P FDC634P FDC634P NDC631N NDC631N NDC651N NDC651N FDC654P FDC654P , FDC642P FDC654P FDC634P NDC631N NDC651N FDC634P FDC638P FDC640P FDC642P SI3443DV FDC606P NDC631N FDC633N FDC604P FDC638P FDC640P SI3447DV NDC651N NDC651N FDC654P NDC652P NDC652P
Fairchild Semiconductor
Original
2SK3240 BS170 IRLML6302 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2N7000 2N7002 2N7002E 2N7002K 2SJ574

mosfet cross reference

Abstract: SMP40N06 IRLMS1902 NDC631N Micro6, N IRFL014 NDT014 SOT-223, N IRLMS5703 NDC652P Micro6, P , FDC634P TSOP6, P IRL2310 NDP710A TO-220, N MGSF3442V NDC631N TSOP6, N IRL2505 NDP7052L TO-220, N MGSF3442VV NDC631N TSOP6, N IRL2703 FDP4030L TO-220, N MGSF3442X NDC631N TSOP6, N IRL2910 NDP710A TO-220, N MGSF3454V NDC651N TSOP6, N IRL3102 , NDP6031 TO-220, N NDB710A NDB710A TO-263, N NDP6030L NDP6030L TO-220, N NDC631N
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Original
IRF7206 IRF7303 SUP40N06-25L mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY IRFZ44 TO-263 SMP60N03-10L IRF7203 FDS9435A IRF7204 NDS8434A IRF7205 BS270

NDC631N

Abstract: , Junction-to-Case (Note 1) 30 °C/W NDC631N.SAM ELECTRICAL CHARACTERISTICS (TA = 25°C unless , paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDC631N.SAM National , N May 1996 ADVANCE INFORMATION NDC631N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field , otherwise note Symbol Parameter NDC631N Units VDSS Drain-Source Voltage 20 V VGSS
National Semiconductor
Original

55b6

Abstract: NDC631N ià National Semiconductor" July 1996 NDC631N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low , Symbol Parameter NDC631N Units Vâ'ž Drain-Source Voltage 20 Gate-Source Voltage - Continuous Drain
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OCR Scan
55b6 SD113Q SQ113D

NDT453N

Abstract: H834P Fairchild S e m ic o n d u c to r Discrete Power and Signal Technologies Selection G uides Surface Mount Power MOSFETs Part Num ber v,s (VI ^DSfoN} 10V Max (ß) 4.5V 2.7V In (A) PD (W | Part Remarks | Num ber v ,s IV) M ax ( fi) V « ® 10V 4.5V 'd (A) P, |W | S u p e r S O T TM -E SO T-223 P o w e r SOT N-Channel NDC631N FDC6303N" FDC6301N* NDC651N NDC7002N 20 25 25 30 50 0.06 2 8 .« 0.5 4 0.09 4 0.075 0.7 S 4.1 0.68 0.2 3.2 0.51 1.6 0.9 0.9 1.6 0.96
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OCR Scan
NDT453N FDC6321C 6322L NDH8501N H834P NDT455N NDT451AN NDT451N NDT3055 NDT3055L

SSP35n03

Abstract: bc417 = 17m Q5 Fairchild NDC631N 1 20V N-channel MOSFET R = 60m U1 Fairchild FAN5230
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Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA

MOSFET DRIVER circuits using microcontroller 8051

Abstract: 25SP33M Any Any Fairchild FDS6690A Fairchild NDC631N Fairchild FAN5230 Quantity 1 Description 33µF, 25V
Fairchild Semiconductor
Original
MOSFET DRIVER circuits using microcontroller 8051 25SP33M RC5231 RC5230 DS30005230

5V 2A SW regulator 220v input buck

Abstract: 12V DC to 220V DC boost converter circuit diagram Q1-4 Fairchild FDS6690A 4 30V N-channel MOSFET R = 17m Q5 Fairchild NDC631N 1
Fairchild Semiconductor
Original
5V 2A SW regulator 220v input buck 12V DC to 220V DC boost converter circuit diagram regulator input 220V output 12V DC 3A

dc-dc converter 12v to 5v 3a ic

Abstract: 24v input 5v output regulator Fairchild MBR0520L Any Any Fairchild FDS6690A Fairchild NDC631N Fairchild FAN5235 Quantity 1 Description
Fairchild Semiconductor
Original
dc-dc converter 12v to 5v 3a ic 24v input 5v output regulator dc-dc converter 12v to 5v 3a SD-N50 12v in 5v out regulator 24V to 12V REGULATOR IC FAN5235QSC FAN5235MTC DS30005235

MOSFET DRIVER circuits using microcontroller 8051

Abstract: 24V DC to 5V 1A DC flyback converter ) 75 1.4K 51K 0 ohm 22 27K 68K 0 27512 93C46 ST6118 AIC1631-5 FDC6324L NDC631N MX98715AC
Fairchild Semiconductor
Original
24V DC to 5V 1A DC flyback converter

st6118

Abstract: LF8200 Fairchild NDC631N Fairchild FAN5230 Quantity 1 Description 33µF, 25V Comments OSCON, Irms = 3A, 19V adapter
Macronix International
Original
MX98715AEC-E PM0678 MX98715A LF8200 PT4171S crs20 NDK America S558-5999-1 MX98715AECE IEEE802 RJ-45 NOV/09/1999

MOSFET DRIVER circuits using microcontroller 8051

Abstract: dc to dc 12v to 19v converter circuit design Q1-4 Fairchild FDS6690A 4 30V N-channel MOSFET R = 17m Q5 Fairchild NDC631N 1
Fairchild Semiconductor
Original
dc to dc 12v to 19v converter circuit design FAN5230QSC

8051 fairchild

Abstract: Thermal Shut Down Functioned MOSFET -4 Fairchild FDS6690A 4 30V N-channel MOSFET R = 17m Q5 Fairchild NDC631N 1 20V N-channel
Fairchild Semiconductor
Original
8051 fairchild Thermal Shut Down Functioned MOSFET 12V DC to 24V dC converter circuit diagram

25SP33M

Abstract: FAN5235 = 17m Q5 Fairchild NDC631N 1 20V N-channel MOSFET R = 60m U1 Fairchild FAN5230
Fairchild Semiconductor
Original
buck EXCEL SPREADSHEET

MOSFET DRIVER circuits using microcontroller 8051

Abstract: LSD3356 Fairchild NDC631N 1 20V N-channel MOSFET R = 60m U1 Fairchild FAN5230 1 SER Controller
Fairchild Semiconductor
Original
LSD3356

RC5230

Abstract: Any Any Fairchild FDS6690A Fairchild NDC631N Fairchild FAN5230 Quantity 1 Description 33µF, 25V
Fairchild Semiconductor
Original
IPM6220
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