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TPS1100DR Texas Instruments Single P-channel Enhancement-Mode MOSFET 8-SOIC visit Texas Instruments
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N-Channel Depletion-Mode MOSFET

Catalog Datasheet MFG & Type PDF Document Tags

N-Channel

Abstract: N-Channel Depletion-Mode MOSFET TSM126 N-Channel Depletion-Mode MOSFET SOT-23 PRODUCT SUMMARY VDS (V) RDS(on)(Ω)(max , TSM126 N-Channel Depletion-Mode MOSFET Electrical Specifications (Tj = 25oC unless otherwise noted , ‰¤2% 2/7 Version: A14 TSM126 N-Channel Depletion-Mode MOSFET Electrical Characteristics Curves , Temperature 3/7 Version: A14 TSM126 N-Channel Depletion-Mode MOSFET Electrical Characteristics , TSM126 N-Channel Depletion-Mode MOSFET Electrical Characteristics Curves (Ta = 25oC, unless otherwise
Taiwan Semiconductor
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N-Channel N-Channel Depletion-Mode MOSFET TSM126CX

N-Channel Depletion-Mode MOSFET

Abstract: P-Channel Depletion Mosfets Figure 4. Output Characteristics N-Channel Depletion-Mode MOSFET Siliconix 21-Jun-94 AN901 ID , operation results in a unique series of output characteristics where, for the n-channel depletion-mode , 0.5 V VGS = 0 V IDSS VGS = ­0.5 V The transfer characteristic of the n-channel, depletionmode , Characteristics of a Depletion-Mode MOSFET (ND2020L) Extending Power Level Using MOSPOWER The n-channel, depletion-mode MOSFET can be used in conjunction with an enhancement-mode power device to give an appreciable
Temic Semiconductors
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ND2406 ND2410 2N692 P-Channel Depletion Mosfets DEPLETION MOSFET depletion mode fet depletion mode mosfet P-Channel Depletion-Mode mosfet depletion ND2012

IXTA02N100D2

Abstract: depletion 400V power mosfet N-Channel Depletion-mode MOSFET has negative channel cutoff voltage, which is designated as VGS(off). A , . Figure 5: An N-Channel Depletion-mode MOSFET with a voltage reference to provide a precise current , Depletion-mode MOSFET (Q1) as a current source [1] Figure 5 shows a current source example with a voltage , require N-channel Depletion-mode power MOSFET that operates as a normally "on" switch when the , applications. Figure 1: An N-channel Depletion-mode power MOSFET A circuit symbol for N-channel
IXYS
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IXTA02N100D2 depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET MOSFET "CURRENT source" AN-D16

P-Channel Depletion Mosfets

Abstract: mosfet low idss characteristic of the n-channel, depletionmode MOSFET (Figure 1b). Because the gate is isolated (see Figure 3b , 0.02 1.0 0.10 2.5 0.30 The n-channel, depletion-mode MOSFET can be used in conjunction , Depletion-Mode MOSFET Siliconix 10-Mar-97 AN901 ID Applications For Depletion-Mode MOSFETs As a , of the depletion-mode MOSFET is its ability to perform at higher operating voltages than its JFET counterpart. As a depletion-mode structure, the MOSFET permits the added flexibility of allowing the gate
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mosfet low idss n-channel mosfet triggering N CHANNEL DEPLETION MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET P-Channel Depletion-Mode MOSFET depletion-mode

N-Channel Depletion-Mode MOSFET

Abstract: normal scr operation a unique series of output characteristics where, for the nchannel depletionmode MOSFET, we see , NChannel DepletionMode MOSFET (06/21/94) AN901 Siliconix Applications For DepletionMode MOSFETs , , depletionmode MOSFET can be used in conjunction with an enhancementmode power device to give an appreciable , Bonkowski Introduction MOSFET may also perform in the enhancementmode. The nchannel enhancementmode MOSFET (Figure 1c), requires a positivepolarity gate voltage referenced to the source to provide
Temic Semiconductors
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normal scr operation depletion mode current limiter mosfet vs SCR voltage regulator mosfet 1,2 mosfet modern applications P channel MOSFET 1A

N-Channel Depletion-Mode MOSFET high voltage

Abstract: N-Channel Depletion-Mode MOSFET high-voltage N-channel depletion-mode MOSFET. It can be used for normally closed solid state relays, SMPS , high input impedance and positive temperature coefficient inherent in MOSFET devices. Characteristic
Supertex
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DN2470 DN2470K4 DN2470K4-G SMPS MOSFET 700V DN247

N-Channel Depletion-Mode MOSFET high voltage

Abstract: depletion-mode Product Overview: DN2470 is a high-voltage N-channel depletion-mode MOSFET. It can be used for normally , high input impedance and positive temperature coefficient inherent in MOSFET devices. Characteristic of
Supertex
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N-Channel Depletion-Mode MOSFET

Abstract: N-Channel Depletion-Mode MOSFET high voltage ) Product Overview: DN2470 is a high-voltage N-channel depletion-mode MOSFET. It can be used for normally , with the high input impedance and positive temperature coefficient inherent in MOSFET devices
Supertex
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TO-252 N-channel power MOSFET n mosfet depletion n mosfet depletion note depletion-mode power depletion fet depletion mode

N-Channel Depletion-Mode MOSFET

Abstract: VDDV24 VDDV24 J7ESS& N-Channel Depletion-Mode MOSFET_ TYPE Single Single PACKAGE TO-92 (TO-226AA) Chip · · ND2406L, ND2410L Available as VDDV1CHP, VDDV2CHP DEVICE TYPICAL CHARACTERISTICS On-Resistance & Drain Current vs. Gate-Source Cutoff Voltage 25 On-Reslstance vs. Drain Current VQS = 0 V T j = 25°C 20 15 (SI) r DS ·d r DS ND2410 (mA) ( il) 10 ND2406 10 V G S(O FF| (V) 100 I d (mA) 1K Normalized On-Resistance vs. Junction Temperature
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OCR Scan

N-Channel Depletion-Mode MOSFET

Abstract: LND250 P relim ina ry N-Channel Depletion-Mode MOSFET Ordering Information BVd s x / B V dgx 500V ^DS(ON) Idss Order Num ber / Package TO-236AB* LND250K1 Product marking for SOT-23: NDE* where * = 2-week alpha date code (max) 1.0KQ (min) 1.0mA *S am e as SO T-23. All units shipped on 3,000 piece carrier tape reels. Features ESD gate protection Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain
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OCR Scan
Abstract: Supertex inc. LND250 N-Channel Depletion-Mode MOSFET Ordering Information If Order Number / Package Product marking for SOT-23: (min) TO-236AB* NDE* 1.0K& 1.0mA LND250K1 BV dsx / b v dgx 500V Idss where = 2-week alpha date code *S am e as SO T-23. All units shipped on 3,000 piece ca rrie r tape reels. Features Advanced DMOS Technology â¡ ESD gate protection â¡ Free from secondary breakdown The LND2 is a high voltage N-channel -
OCR Scan

LND250

Abstract: LND250K1 LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVDSX / BVDGX RDS(ON) (max) IDSS (min) Order Number / Package Product marking for SOT-23: TO-236AB* NDEp 500V 1.0K 1.0mA LND250K1 where p = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features Advanced DMOS Technology ESD gate protection The LND2 is a high voltage N-channel depletion mode (normallyon) transistor utilizing Supertex
Supertex
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n-channel 500v sot 23 Power MOSFET MOSFET IGSS 100nA VDS 20V

N-Channel Depletion-Mode MOSFET high voltage

Abstract: DW-200 Supertex inc. N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ b v dgx R d S(ON) Id s s LND250 Order Number / Package TO-236AB* LND250K1 Product marking for SOT-23: NDE* where * = 2-week alpha date code (max) 1.0KÌÌ (min) 1.0mA 500V ' Sam e as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features ESD gate protection Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain
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OCR Scan
DW-200 NDE SOT23 MARKING SOT-23 MARKING mn

MOSFET IGSS 100nA VDS 20V

Abstract: N-Channel Depletion-Mode MOSFET high voltage LND250 Preliminary N-Channel Depletion-Mode MOSFET Ordering Information BVDSX / BVDGX RDS(ON) (max) IDSS (min) Order Number / Package Product marking for SOT-23: TO-236AB* NDEp 500V 1.0K 1.0mA LND250K1 where p = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features Advanced DMOS Technology ESD gate protection The LND2 is a high voltage N-channel depletion mode (normallyon) transistor utilizing Supertex
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Depletion MOSFET 20V depletion mode ramp generator MOSFET N SOT-23 power relay N-channel mosfet

vn05

Abstract: high voltage constant current source a 500V ESD protected Nchannel depletion-mode MOSFET and the VN0550N3 is a 500V N-channel enhancement-mode MOSFET. Both transistors are available in the TO-92 package. The LND1 is configured as a
Supertex
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vn05 high voltage constant current source LND150N3
Abstract: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features âºâº Bi-directional âºâº Low on-resistance âºâº Low input capacitance âºâº Fast switching speeds âºâº High input impedance and high gain âºâº Low power drive requirement âºâº Ease of paralleling The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and Supertexâ'™s well-proven silicon-gate manufacturing process. This combination Supertex
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LND01K1-G 2500/R MO-178 DSPD-5SOT23K1 A041309 DSFP-LND01

constant current source

Abstract: N-Channel Depletion-Mode MOSFET a 500V ESD protected Nchannel depletion-mode MOSFET and the VN0550N3 is a 500V N-channel enhancement-mode MOSFET. Both transistors are available in the TO-92 package. The LND1 is configured as a
Supertex
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constant current source linear databook 222 S capacitor charging and discharging time at the capacitor capacitor c

N-Channel Depletion-Mode MOSFET

Abstract: AN-D12 , and a capacitor C. R1 is a trimpot resistor. The LND150N3 is a 500V ESD protected N-channel depletion-mode MOSFET and the VN0550N3 is a 500V N-channel enhancement-mode MOSFET. Both transistors are
Supertex
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AN-D12 charging and discharging capacitor ramp generator piezo amplifier driver -audio
Abstract: Supertex inc. LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / ^DS(ON) Idss b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0K& 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SO T-89. P roduct shipped on 2000 piece c a rrie r tape reels. Features Advanced DMOS Technology â¡ ESD gate protection â¡ Free from secondary breakdown The LND1 is a high voltage N-channel depletion mode (normallyon -
OCR Scan

depletion n-channel mosfet to-92

Abstract: LND150N8 equivalent LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS(ON) (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0K 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. Product shipped on 2000 piece carrier tape reels. Features Advanced DMOS Technology ESD gate protection The LND1 is a high voltage N-channel depletion mode (normallyon) transistor utilizing Supertex's lateral DMOS technology. The gate is ESD protected. Free from
Supertex
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depletion n-channel mosfet to-92 LND150N8 equivalent
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