NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: MOSFET 60 40 MOSFET 20 Ron Ã- Qg (-nC) Ron Ã- A mcm2 VDS:100V/div t:100ns , trr=500A/s@VDSS=400V,150° C VDSS (V) RDS(on)Max.() ID (A) VGS=10V Qg typ. , TO-220(W) TK20A60U TK20A60U TK12J60U TK12J60U TK15A60U TK15A60U DTMOS II TO-3P(N) TO-220SIS t:5s/div t:5us/div TO-220(W) VGS:10V/div TK15D60U TK15D60U 600 15 0.3 17 950 TK15J60U TK15J60U TO-3P(N) TK20A60U TK20A60U TO-220SIS TK20D60U TK20D60U 600 20 0.19 27 1470 TO-3P(N) TK20J60U TK20J60U DTMOS I TK40J60T TK40J60T ... | Original |
1 pages, |
TK40J60T TK12 TK12A60U TK12D60U 500a fet TK15A60U TK15D60U TK20D60U TK20A60UIAR TK15J60U Mosfet 600V, 20A TK12J60U MOSFET 400V TO-220 TK20A60U datasheet abstract |
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| Abstract: Introduction dV/dt rating is an important parameter for the ruggedness of power MOSFET. It is usually a parameter shown in high voltage Power MOSFET (BVdss 500V) datasheets, but doesn't appear in most low voltage power MOSFET (BVdss 100V) datasheets including all low voltage datasheets made by AOS. Both dV , for UIS We use a diode recovery test condition for low voltage MOSFET with di/dt=500A/us. Waveforms , dV/dt Ratings for Low Voltage and High Voltage Power MOSFET Fei Wang , Wei Wang, Anup Bhalla 1. ... | Original |
11 pages, |
high voltage mosfet AOT1N60 AO4468 MOSFET cross uis test N mosfet 100v 500A datasheet abstract |
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| Abstract: , Switching, 250 mA, 75 V, SOT-23 Transistor, N MOSFET, 30 A, D-Pak, 18 m Transistor, N MOSFET, 60 A, D-Pak , short-circuit protection by sensing the voltage on the synchronous MOSFET. The ADP1829 ADP1829 evaluation board , MOSFET Selection. 4 Ordering , 3 of 16 I L 2 12 (6) EVAL-ADP1829 EVAL-ADP1829 MOSFET SELECTION The high-side MOSFET conduction loss can be calculated as The choice of MOSFET directly affects the dc-to-dc converter performance. ... | Original |
16 pages, |
N mosfet 100v 500A M400 IRLR7807Z ADP1829 20SP180M VJ0603Y821 IRFR3709Z fz 85 1500 6.3v FZ 75 capacitor 1500 6.3V EVAL-ADP1829 EVAL-ADP1829 abstract |
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| Abstract: , Switching, 250 mA, 75 V, SOT-23 Transistor, N MOSFET, 30 A, D-Pak, 18 m Transistor, N MOSFET, 60 A, D-Pak , sensing the voltage on the synchronous MOSFET. The ADP1823 ADP1823 evaluation board schematic is shown in Figure , MOSFET Selection. 4 Ordering , MOSFET SELECTION The high-side MOSFET conduction loss can be calculated as The choice of MOSFET directly affects the dc-to-dc converter performance. The MOSFET must have low on resistance (RDSON) to ... | Original |
16 pages, |
M400 IRLR7807Z IRFR3709Z FZ 75 capacitor 1500 6.3V FET 100v pair ADP1823 20SP180M EVAL-ADP1823 EVAL-ADP1823 abstract |
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| Abstract: ) 100V trr(a) trr(b) Fig. 7. Onset of MOSFET failure with short-circuit , This paper will identify a mechanism that induces power MOSFET failure when the converter operates into a shortcircuit load, a condition that leads to the MOSFET being turned off while its own , parasitic NPN transistor associated with the MOSFET, in that the device is still full of minority , droplet transfer through the established arc, 1ms wide current pulses must be switched from 20A to 500A ... | Original |
10 pages, |
ZVT full bridge schematic WELDER resonant full bridge schematic zcs fronius INVERTER ARC WELDING resonant converter for welding smps welder inverter ZVT full bridge for welding SWITCHING WELDING SCHEMATIC BY MOSFET pwm INVERTER welder arc welder circuit schematic WELDER capacitor APT9803 APT9803 abstract |
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| Abstract: IRF7820PbF HEXFET® Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS(on , VDS = 50V, ID = 2.2A  S 44 VDS = 100V  VGS = 10V   nC ID = 2.2A  See Figs. 6, 16a & 16b , See Figs. 15a & 15b  VGS = 0V  pF VDS = 100V  = 1.0MHz e e Avalanche , Max. Units    33 213 1.5 A 29 1.3 50 320 V ns nC Conditions MOSFET symbol showing the ... | Original |
9 pages, |
IRF7820 datasheet abstract |
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| Abstract: ), the Gate Turn-off Thyristor (GTO), the Power MOSFET, and the Insulated Gate Bipolar Transistor (IGBT , IR n p SLOPE = R D CATHODE a) A VTO V RRM VF P = VTO + IF(AV) + RD . I d , electric field across the N region of the diode becomes strong enough to cause breakdown - hence the , reversed, the p and n regions of the diode are still full of minority carriers, which can cause the diode , length is shorter than the thickness of the silicon N region, the diode's on-resistance increases ... | Original |
15 pages, |
mosfet controlled thyristor byt12 BYT12-800 IR thyristor manual 250v gto thyristor data sheet 250v gto thyristor SCR GTO "Power Diode" 10A 800v BYT12-100 BYT12-400 power IGBT MOSFET GTO SCR diode byt12 1000 datasheet abstract |
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| Abstract: control scheme. The ADP1864 ADP1864 drives a P-channel MOSFET that regulates an output voltage as low as 0.8 V , . 3 Changing the MOSFET . 10 , the source and load, calculate efficiency from the following equation: n= VOUT Ã- I OUT V IN Ã- , on the GND plane. Place another oscilloscope probe at the source of the MOSFET with the ground lead , observe the gateto-source waveform. Do not place a probe across gate-to-source terminals of the MOSFET ... | Original |
16 pages, |
PDS1040L oscilloscope ox 500MSPS ADP1864 EVAL-ADP1864 ADP1864 abstract |
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| Abstract: PD - 97449A IRLH5030PbF HEXFETо Power MOSFET VDS RDS(on) max (@VGS = 4.5V) 100 9.9 44 , ннн mV/â-'C VDS = 100V, VGS = 0V 20 A VDS = 100V, VGS = 0V, TJ = 125â-'C 250 V 100 GS = 16V nA -100 VGS = , Max. 230 50 Conditions MOSFET symbol showing the integral reverse G S pF Avalanche , junction diode. TJ = 25â-'C, IS = 50A, VGS = 0V TJ = 25â-'C, IF = 50A, VDD = 50V di/dt = 500A/s e eâ"œ , 150 T C , Case Temperature (â-'C) 1.5 ID = 150A ID = 500A 1.0 ID = 1.0mA ID = 1.0A 0.5 -75 -50 -25 ... | Original |
8 pages, |
N mosfet 100v 500A datasheet abstract |
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| Abstract: , low-side, and synchronous buck MOSFET drivers. The bridge driver products handle voltages up to 100V, with , . 14 Power MOSFET Drivers , 1.5 94 N 10 Ld MSOP ISL8011 ISL8011 1.2A Integrated FETs, High Efficiency Synchronous Buck , / LDO Regulators Ranging from high voltage linear regulators that support up to 100V input voltage to , 100V Linear Regulator Typical Application CONVERTER POWER STAGE VIN + Key Features The ... | Original |
32 pages, |
c 2688 nec EL7242 AND UC3842 POWER SUPPLY AND UC3842 AND EL7242 UC3842 mosfet driver ISL8510 MOSFET Drivers 40V ISL83202 ISL83204A application note ISL6754 AHB ZVS e bike motor controller e-bike 1-888-INTERSIL 1-888-INTERSIL abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| 100V - 0.080 ohms Harris Semiconductor MOSFETs for Audio Applications Harris Corporation's Home Page ¤ Semiconductor's Home Page ¤ Harris Semiconductor Cool Audio Home Page ¤ Harris Semiconductor MOSFETs for Audio Applications Audio MOSFETs AUDIO MOSFET SELECTION CHART Configuration www.datasheetarchive.com/files/harris/audio/audiofet.htm |
Harris | 15/08/1997 | 6.75 Kb | HTM | audiofet.htm |
| ) * - Assumes default L=100U W=100U - *SRC=BSS123 BSS123 BSS123 BSS123;DI_BSS123 BSS123 BSS123 BSS123;MOSFETs N;Enh;100V 0.170A 1.00ohms Diodes Inc ) * - Assumes default L=100U W=100U - *SRC=BSS123W BSS123W BSS123W BSS123W;DI_BSS123W BSS123W BSS123W BSS123W;MOSFETs N;Enh;100V 0.170A 1.00ohms Diodes Inc default L=100U W=100U - *SRC=MMBF170 MMBF170 MMBF170 MMBF170;DI_MMBF170 MMBF170 MMBF170 MMBF170;MOSFETs N;Enh;60.0V 0.500A 2.10ohms Diodes Inc * > N;Enh;60.0V 0.115A 7.50ohms Diodes Inc. - .MODEL 2N7002 NMOS( LEVEL=1 - * > N;Enh;60.0V 0.115A 3.20ohms Diodes Inc. MOSFET - One element of dual www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/vendor list/diodes%20incorporated/spice/spicemodels_mosfets.txt |
Spice Models | 29/07/2012 | 5.63 Kb | TXT | spicemodels_mosfets.txt |
| ) Logic Level Enhancement-Mode Power MOSFETs 2N6901 1.7A, 100V, 1.400 ohm, Logic Level, N-Channel Power MOSFET (1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS) 2N6902 12.0A, 100V, 0.200 ohm -Channel Power MOSFET RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM 40A, 100V, ESD N08L, RFL1N10L 1.0A, 80V and 100V, 1.200 ohm, Logic Level, N-Channel Power MOSFET (1 100V, 0.200 ohm, Logic Level, N-Channel Power MOSFET (1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS 1-800-4-HARRIS) RFM15N05L, RFM www.datasheetarchive.com/files/harris/families/pwr.htm |
Harris | 15/08/1997 | 90.49 Kb | HTM | pwr.htm |
| n-channel enh. SO-8 85 K 10.97 BSP 123 100 V 6.0 Ohm 0.38 A LL n 100 V 0.80 Ohm 1.00 A LL n-channel enh. SOT 223 260 K 09.96 BSP 297 -channel enh. SOT 223 273 K 09.96 BSP 372 100 V 0.31 Ohm 1.70 A LL n-channel enh. SOT 223 254 K 09.96 BSP 373 100 V 0.30 Ohm 1.70 A n-channel enh follows soon BSS 100 100 V 6.00 Ohm 0.22 A LL n-channel enh. TO 92 74 K www.datasheetarchive.com/files/infineon/products/36/3611.htm |
Infineon | 26/11/1998 | 60.58 Kb | HTM | 3611.htm |
| n-channel enh. SO-8 85 K 10.97 BSP 123 100 V 6.0 Ohm 0.38 A LL n 09.96 BSP 296 100 V 0.80 Ohm 1.00 A LL n-channel enh. SOT 223 260 K .17 A LL n-channel enh. SOT 223 273 K 09.96 BSP 372 100 V 0.31 Ohm 1.70 A LL n-channel enh. SOT 223 254 K 09.96 BSP 373 100 V 0.30 Ohm 1 -channel TO 92 75 K 05.97 BSS 119 100 V 6.00 Ohm 0.17 A LL n-channel enh. SOT www.datasheetarchive.com/files/siemens/products/36/3611.htm |
Siemens | 27/02/1998 | 58.13 Kb | HTM | 3611.htm |
| 750 Datasheets GS-D500A 100 V / 5A STEP AND MICROSTEP DRIVE BOARD FOR STEPPER MOTORS Datasheets IRFP450 IRFP450 IRFP450 IRFP450 N-CHANNEL 500V - 0.33 OMH - 14A - TO-247 MESH OVERLAY MOSFET 8 750 www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/620.htm |
STMicroelectronics | 31/03/1999 | 14.93 Kb | HTM | 620.htm |
| of a limited voltage range (60 to 100V) and a very high internal capacitance. The leakage carriers in the base. (1s for V CEO = 100V, 3s for V CEO = 400V). - The fall time t f . The rapidly increasing towards 1800V and a maximum rated current of 500A. The SOA is approximately b) Very high surge current I C CE V I C CE V I D = 2A / Div V DS = 100V / Div t = 200ns / Div I D = 10A / Div V DS = 100V / Div t = 500ns / Div a) b) APPLICATION NOTE 14 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3729.htm |
STMicroelectronics | 20/10/2000 | 28.53 Kb | HTM | 3729.htm |
| than PN diodes. However, they have the disadvantages of a limited voltage range (60 to 100V minority carriers in the base. (1s for V CEO = 100V, 3s for V CEO = 400V). - The fall time t and a maximum rated current of 500A. The SOA is approximately rectangular. The voltage / Div V DS = 100V / Div t = 200ns / Div I D = 10A / Div V DS = 100V / Div t = 500 SCRs), the Gate Turn-off Thyristor (GTO), the Power MOSFET, and the Insulated Gate Bipolar www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3729-v1.htm |
STMicroelectronics | 25/05/2000 | 27.39 Kb | HTM | 3729-v1.htm |
| Amplifier 80V 500mA MPSU06 MPSU06 MPSU06 MPSU06 MPSU06 MPSU06 MPSU06 MPSU06 BJTs NPN Amplifier 80V 2A MPSU07 MPSU07 MPSU07 MPSU07 MPSU07 MPSU07 MPSU07 MPSU07 BJTs NPN Amplifier 100V 2A 2N6043 Darlington 100V 8A 2N6283 Q2N6283 BJTs NPN Darlington 80.0V 20.0A Motorola - 2N6284 Q2N6284 BJTs NPN Darlington 100V 20.0A Motorola - 2N6301 Q2N6301 BJTs NPN Darlington 80.0V 8.00A Motorola - 2N6350 Q2N6350 QN3766 QN3766 QN3766 QN3766 BJTs NPN Power 60V 4A 2N3767 QN3767 QN3767 QN3767 QN3767 BJTs NPN Power 80V 4A 2N3879 QN3879 QN3879 QN3879 QN3879 BJTs NPN Power 100V 7A Power 60V 1A 2N5190 QN5190 QN5190 QN5190 QN5190 BJTs NPN Power 40V 4A 2N5303 QN5303 QN5303 QN5303 QN5303 BJTs NPN Power 100V 30A 2N5336 QN5336 QN5336 QN5336 QN5336 www.datasheetarchive.com/download/31304461-777572ZC/icap4rxpwrliblist.zip (ICAP4RxPwrlibList.xls) |
Spice Models | 29/07/2012 | 215.73 Kb | ZIP | icap4rxpwrliblist.zip |
| Amplifier 80V 2A MPSU07 MPSU07 MPSU07 MPSU07 MPSU07 MPSU07 MPSU07 MPSU07 BJTs NPN Amplifier 100V 2A 2N6043 QN6043 QN6043 QN6043 QN6043 BJTs NPN Darlington 60V 8A 2N6044 QN6044 QN6044 QN6044 QN6044 BJTs NPN Darlington 80V 8A 2N6045 QN6045 QN6045 QN6045 QN6045 BJTs NPN Darlington 100V 8A 2N6283 Q2N6283 BJTs NPN Darlington 80.0V 20.0A Motorola - 2N6284 Q2N6284 BJTs NPN Darlington 100V 20.0A Motorola - 2N6301 Q2N6301 3879 QN3879 QN3879 QN3879 QN3879 BJTs NPN Power 100V 7A 2N4233A QN4233A QN4233A QN4233A QN4233A BJTs NPN Power 80V 5A 2N4911 QN4911 QN4911 QN4911 QN4911 BJTs NPN Power Power 100V 30A 2N5336 QN5336 QN5336 QN5336 QN5336 BJTs NPN Power 80V 5A 2N5337 QN5337 QN5337 QN5337 QN5337 BJTs NPN Power 80V 5A 2N5338 QN5338 QN5338 QN5338 QN5338 www.datasheetarchive.com/download/23131848-777573ZC/icap4rxrfliblist.zip (ICAP4RxRFlibList.xls) |
Spice Models | 29/07/2012 | 211.35 Kb | ZIP | icap4rxrfliblist.zip |