| Fulltext Datasheet Results |
1 - 50 of about 10000+ for Model 452 |
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First line: Filter 452.70MHz Part MA08247 MAXIMUM RATING: Input Power Level: Operating Temperature: -40°C 85°C Storage Temperature -40°C 85°C Voltage: ELECTRICAL CHARACTERISTICS: Abstract: .. SAW Filter 452.70MHz 70MHz Model: TB0205A TB0205A . Part No: MA08247 MA08247 REV NO.: 1. TB0205A TB0205A v1 1. A. MAXIMUM RATING: 1. Input Power Level: 15 dBm 2. Operating Temperature: -40 °C to 85 °C 3. Storage Temperature : -40 ° .. Tags: MA08247 |
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First line: Rubber Guards Eyepieces [26800B-452] Account Abstract: .. Model: 26800B-452 Shipping Weight: 0.05lbs 05lbs . Customers who bought this product also purchased.. Rubber Eye Guards for DHW Eyepieces. Page 1 of 1 Rubber Eye Guards for DSW Eyepieces [26800B-452 .. Tags: datasheet abstract.. |
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First line: MK5009P kss 211A Cost, General Purpose, 100kHz Voltage Frequency Converter Wide Dynamic Range: 1CIO/uV Versatility: Voltage Current Inputs Bipolar Inputs: High Stability: max; Model 452L Ncinlinearity: 150ppm Meet MIL-STD-202E Environmental Testing TTL/DTL CMOS/HNIL Compatible Output Long Term Preci Abstract: .. High Noise Immunity Digital Transmission GENERAL DESCRIPTION Model 452: is a low cost 100kHz 100kHz voltage to frequency converter with performance features that make it an excellent choice for all .. Tags: kss 211A MK5009P datasheet abstract.. |
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First line: 452 diode SPICE PARAMETER RSS040P03 RSS040P03 PMOSFET model Date: 2006/10/04 This model includes diode between drain source. ******************D .SUBCKT RSS040P03 MOS_P DREV .MODEL MOS_P PMOS LEVEL=3 L=2.0000E-6 KP=32.176E-6 RS=10.000E-3 RD=22.886E-3 VTO=-2.2055 RDS=1.0000E6 TOX=2.0000E-6 CGSO=600.0 Abstract: .. MODEL DREV D + IS=1.7450E-12 7450E-12 + N=1.0662 + RS=63.189E-3 189E-3 + IKF=23.452 .ENDS RSS040P03 RSS040P03 .. Tags: 452 diode RSS040P03 |
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First line: Vacuum Variable Capacitors CVHC 1600 CVHC 1600 SPECIFICATIONS Model Number Capacity Range (pF) Voltage (kV) Peak Test Working Current Amps (RMS) Max. Type Nominal Dimensions Length (in. Diameter (in. Torque Lbs.) Max. Direct Pull (Lbs.) Max. Weight (Nominal) 17.80 452.12 8.20 203.20 17.80 452.12 8.2 Abstract: .. Model Number CVHC-1600-0030S CVHC-1600-0030S CWV2-1600-0035S CWV2-1600-0035S CWV2-1600-0040S CWV2-1600-0040S . Capacity Range pF 100 .. / mm 17.80 / 452.12 17.80 / 452.12 17.80 / 452.12. Diameter in. / mm 8.20 / 203.20 8.20 / 203.20 8 .. Tags: CVHC-1600-0030S |
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First line: 329404" INSTRUMENTS INC" ELTEC INSTRUMENTS Model Integrated Sensor Lithium Tantalate pyroelec-tric parallel opposed dual element high gain detector with complete integral analog signal processing housed standardized package. This unit offers greatly improved detection capability over exten Abstract: .. 329404" 1 ULTËC INSTRUMENTS INC" ELTEC INSTRUMENTS INC The Model 452 IR-EYEâ„ ¢ Integrated Sensor is a Lithium Tantalate pyroelec-tric parallel opposed dual element high gain detector with .. Tags: block diagram of fingerprint sensor florida rf 100 2a datasheet abstract.. |
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First line: SPICE PARAMETER RDX080N50 RDX080N50 NMOSFET model Date: 2007/07/25 ******************D .SUBCKT RDX080N50 MOS_N .584 .MODEL MOS_N NMOS LEVEL=3 L=2.0000E-6 KP=5.5508E-6 RS=10.000E-3 RD=0 VTO=3.4607 RDS=20.000E6 TOX=2.0000E-6 CGSO=1.0261E-9 CGDO=15p CBD=0 RG=0 RB=1.0000E-3 GAMMA=0 ETA=100.00E-6 KAPPA=0 Abstract: .. MODEL DDS D + IS=44.611E-12 611E-12 + N=1.1399 + RS=5.7765E-3 7765E-3 + IKF=2.2218 + CJO=452.22E-12 22E-12 + M=1.2285 + VJ=16.128 + BV=500 + TT=490.00E-9 00E-9 .MODEL DDG D + CJO=2.3944E-9 3944E-9 + M=1.8041 + VJ=3.3792 + BV=500 .. Tags: RDX080N50 |
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First line: 357nt cosmo 357nt Photo Coupler serial Numbering System Internal Control Code Abstract: .. Model Number 354NT 354NT 355NT 355NT 357NT 357NT 452 815 4N33 4N33 . DIP Type SMD Type H Type Mni-Flat Type. Numbering System Photo Coupler KPC serial. Device Package. KPC354NT KPC354NT 4pin Mini-Flat, AC input. KPC355NT KPC355NT 4pin Mini .. Tags: cosmo 357nt 357nt 357NT* PHOTOCOUPLER 354nt datasheet abstract.. |
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First line: 455.0MHz Filter Part MA09371 MAXIMUM RATING: Input Power Level: voltage: Operating Temperature: -30°C +80°C Storage Temperature: -40°C +85°C ELECTRICAL CHARACTERISTICS: Parameter Center Frequency, Insertion Loss, within 452.5 ~457.5 Stop Band Attenuation (Ref level from 462.5 467.5 4 Abstract: .. Insertion Loss, IL within 452.5 ~457.5 MHz - 1.7 2.8 dB. Stop Band Attenuation Ref level from 0 dB .. 455.0MHz SAW Filter Model: TA0356A TA0356A . Part No: MA09371 MA09371 REV NO.: 1. TA0356A TA0356A v1 2. 4. FREQUENCY .. Tags: MA09371 |
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First line: 455.0MHz Filter Part MA09282 MAXIMUM RATING: Input Power Level: voltage: Operating Temperature: -30°C +80°C Storage Temperature: -40°C +85°C ELECTRICAL CHARACTERISTICS: Parameter Center Frequency, Insertion Loss, within 452.5 457.5 Stop Band Attenuation (Reference from 462.5 467.5 46 Abstract: .. Insertion Loss, IL within 452.5 ~ 457.5 MHz - 1.6 2.8 dB. Stop Band Attenuation Reference from 0 .. 455.0MHz SAW Filter Model: TA0357A TA0357A . Part No: MA09282 MA09282 REV NO.: 1. TA0357A TA0357A v1 2. 4. FREQUENCY .. Tags: MA09282 |
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First line: Adapters, In-Series SMA, DC-18 GHz, Flange Mount SPECIFICATIONS: Models: Abstract: .. SPECIFICATIONS: Models: SPECIFICATIONS: Models: 5311A 5311A , 5312A 5312A , 5313A 5313A . Adapters, In-Series .. * are typical for all 3 Models shown. .340 ±.015 [8.64 ±0.38] .132 ±.015 [3.35 ±0.38] .452 .. Tags: datasheet abstract.. |
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First line: 617 320 THIRD-PARTY DEVELOPMENT TOOLS APPLICATIONS SOFTWARE RISC PROCESSORS MIPS/IDT RISC Microprocessor family supported wide variety third-party development tools applications software. Many these tools software products, useful across entire line processors; others these hardware development tool Abstract: .. HP-16500 HP-16500 Logic Analysis System Hewlett-Packard Co. 800-452-4844 DAS9200 DAS9200 , Model 32GPX 32GPX Tektronix, Inc. 800-426-2200 413-448-8003. In-Circuit Emulators ICEMAN 3041, SYS-R3051 SYS-R3051 Embedded Performance .. Tags: 404 MIPS transistor 0882 Thompson Components PCL - 27 ml 2550 mips r4000 logic analyzer idt cross reference hp 7800 6344 617 730 617 320 2427 datasheet abstract.. |
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First line: SPICE Models Mitel Semiconductor been using several years SPICE parameters internal Design. Custom Silicon Wafer Foundry, offering expanded services with State-of-the-Art Hardware Software Data extraction. Available Models: MODEL Abstract: .. Available Models: MOS MODEL 3 Parameters are routinely extracted on sampling of production .. + rsh= 452.6. + gap1= 4.73e-04 73e-04 . + gap2= 6.36e+02. + delta= 1.789. + eta= 1.940e-02 940e-02 . + kappa= 1.197. + nfs .. Tags: SPICE MODELS 6614 datasheet abstract.. |
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First line: CSBLA455KEC8-B0 Technical Data Ceramic Resonator MURATA Part No.: CSBLA455KEC8-B0 Applied M34556G8FP Product Engineering Service Section Planning Market Promotion Department Piezoelectric Components Group Abstract: .. Oscillating Frequency vs C1,C2 Characteristics MODEL : CSBLA455KEC8-B0 CSBLA455KEC8-B0 with M34556G8FP M34556G8FP . - .. LL 3.16 0.03 3.13 3.25 0.03 3.22 452.923 0.860 0.91. HH 3.16 0.00 3.16 3.25 0.03 3.22 452.924 0.780 .. Tags: CSBLA455KEC8-B0 CSBLA455KEC8-B0 |
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First line: TB0463A Filter 456.0MHz Part MA09759 MAXIMUM RATING: Operating Temperature: Storage Temperature: Input Power Level: CHARACTERISTICS: Ambient Temperature: Optimal Source Impedance(Balanced): Optimal Load Impedance(Balanced): Characteristics Min. Center frequency Minimum Insertion Loss (452.1~459.9MHz Abstract: .. Passband Ripple 452.1~459.9MHz dB - 0.8 1.25 -. 30dB 30dB Bandwidth MHz - 17.4 18.0 -. Attenuation .. SAW Filter 456.0MHz Model: TB0463A TB0463A . Part No: MA09759 MA09759 REV. NO.: 1. TB0463A TB0463A v1 2. C. MEASUREMENT .. Tags: TB0463A MA09759 |
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First line: Type 455SCAL Filter 1.Application: CDMA FRS. 2.SMD Ceramic Package. 3.Hermetically Sealed. 4.Characteristics Ambient temperature 23°C. Terminating impedance Source: Zs=50 matching network. Load: ZL=50 matching network. RoHS Compliant Optional Abstract: .. YY : Model. RoHS Compliant Optional. SAW Fitter. 95 ∞Contact Sales@taitien.com.tw for special .. Insertion loss 452.50~457.50 MHz ae = amin 1.7 dB 2.8 dB. Center frequency Fc 455.00MHz 00MHz -. VSER .. Tags: datasheet abstract.. |
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First line: Technical Data Ceramic Resonator MURATA Part No.: CSBLA455KEC8-B0 Applied M34283G2GP Product Engineering Service Section Planning Market Promotion Department Piezoelectric Components Group Abstract: .. Oscillating Frequency vs C1,C2 Characteristics MODEL : CSBLA455KEC8-B0 CSBLA455KEC8-B0 with M34283G2GP M34283G2GP . - .. LL 3.25 -0.25 3.50 3.38 -0.03 3.41 452.895 0.920 0.87. HH 3.25 -0.28 3.53 3.41 -0.06 3.47 452.889 0 .. Tags: CSBLA455KEC8-B0 |
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First line: NLFV32T-102K-EF Equivalent Circuit Model Library Inductors NLFV32 Series Circuit Diagram Dec. 2009 Model Type: Simple Model Abstract: .. Model Type: Simple Model Inductors / NLFV32 NLFV32 Series. Part No. L1[uH] R1[ohm] C1[pF] R2[ohm .. NLFV32T-1R5M-EF NLFV32T-1R5M-EF 1.5 950 0.452 0.0700. NLFV32T-2R2M-EF NLFV32T-2R2M-EF 2.2 1300 0.487 0.0900. NLFV32T-3R3M-EF NLFV32T-3R3M-EF .. Tags: NLFV32T-102K-EF EF Series 331k NLFV32 |
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First line: SiA513EDJ_RC Thermal Model Parameters Abstract: .. a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers .. CT2 1.9922 m 1.9922 m 452.2021 u 452.2021 u. CT3 34.1193 m 34.1193 m 54.4164 u 54.4164 u. CT4 1.1119 1 .. Tags: 4956 SiA513EDJ RC |
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First line: SiA517DJ_RC Thermal Model Parameters Abstract: .. a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers .. CT2 1.9893 m 1.9779 m 452.2021 u 452.2021 u. CT3 34.1166 m 35.0295 m 54.4164 u 54.4164 u. CT4 1.1119 1 .. Tags: CT3-34 SiA517DJ RC |
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First line: SiA519EDJ SiA519EDJ Thermal Model Parameters Abstract: .. a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers .. CT2 1.9891 m 1.9742 m 452.2021 u 452.2021 u. CT3 34.1114 m 34.9892 m 54.4164 u 54.4164 u. CT4 1.1118 1 .. Tags: SiA519EDJ CT3-34 65285 4956 SiA519EDJ |
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First line: SiA778DJ_RC Thermal Model Parameters Abstract: .. a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers .. CT2 1.9884 m 1.9773 m 452.2021 u 452.2021 u. CT3 34.1358 m 34.9699 m 54.4164 u 54.4164 u. CT4 1.1117 1 .. Tags: CT3-34 4956 4164 SiA778DJ RC |
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First line: Filter 915MHz Part MP01408 MAXIMUM RATING: Input Power Level: voltage: Operating Temperature: -40°C 85°C Storage Temperature: -40°C +85°C CHARACTERISTICS: Item Center frequency Insertion loss ILmax Amplitude ripple VSWR Attenuation (Relative ILFc Source impedance Load impedance Min. Abstract: .. SAW Filter 915MHz 915MHz Model: TA0521A TA0521A . Part No: MP01408 MP01408 REV. NO.: 2. TA0521A TA0521A v2 1. A. MAXIMUM RATING: 1 .. 452 MHz dB 40 62 -. 806 MHz dB 38 55 -. 850 MHz dB 38 57 -. 932 MHz dB 12 31 -. Source impedance ZS Ω - 50 -. Load .. Tags: MP01408 |
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First line: SiA913ADJ_RC Thermal Model Parameters Abstract: .. a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers .. CT2 1.9922 m 452.2021 u N/A. CT3 34.1193 m 54.4164 u N/A. CT4 1.1119 486.1773 u N/A. www.vishay.com .. Tags: CT3-34 SiA913ADJ RC |
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First line: 55000 SERIES PPROVED MINITURE TOGGLE SWITCHES SPECIFICTIONS SUBJECT CHNGE WITHOUT NOTICE FETURES Abstract: .. 55239WAVDEULCSA 55239WAVDEULCSA +U1042 U1042 ON OFF ON DOUBLE POLE MODEL NO. CIRCUIT. 55246WAX433VDEULCSA 55246WAX433VDEULCSA +U1042 U1042 ON .. .452 .452 .472 .472 .145 .145 .039 .039 .078 .078 .185 .185 EPOXY .. Tags: u1042 DP 704 datasheet abstract.. |
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First line: Filter 465.0MHz Part MA07587 MAXIMUM RATING: Input Power Level: voltage: Operating Temperature: -30°C +80°C Storage Temperature: -40°C +85°C ELECTRICAL CHARACTERISTICS: Parameter Center Frequency, Insertion Loss, within 462.5 467.5 Stop Band Attenuation (Reference level from 452.5 46 Abstract: .. Stop Band Attenuation Reference level from 0 dB DC ~ 452.5 MHz 25 28 - dB. 462.5 ~ 457.5 MHz 35 45 - .. SAW Filter 465.0MHz Model: TA0358A TA0358A . Part No: MA07587 MA07587 REV. NO.: 1. TA0358A TA0358A v1 2. 4. FREQUENCY .. Tags: MA07587 |
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First line: Filter 456MHz Part MA09960 MAXIMUM RATING: Operating Temperature: -20° +60° Storage Temperature: -40° +85° Input Power Level: 10dBm CHARACTERISTICS: Ambient Temperature: Optimal Source Impedance (Balanced): Optimal Load Impedance (Balanced): Characteristics Min. Center Frequency Mini Abstract: .. Minimum Insertion Loss 452.1 ~ 459.9MHz dB 7.4 9. Passband Ripple 452.1 ~ 459.9MHz dB - 0.7 .. SAW Filter 456MHz 456MHz Model: TB0427A TB0427A . Part No: MA09960 MA09960 Rev No: 2. TB0427A TB0427A v2 2. C. MEASUREMENT CIRCUIT .. Tags: MA09960 |
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First line: TAD-6113A* ASPB448 High Performance, Base Loaded Vehicular Antenna Series Model ASP-268 Series Abstract: .. ASP-452 ASP-268 ASP-268 supplied with stainless steel shock spring. ASP-555 ASP-555 Same as ASP-268 ASP-268 , but .. mounts for Motorola models TAD 6111A 6111A , TAD 6112A 6112A , TAD 6113A 6113A , TAD 6114A 6114A , and TAE 6052A 6052A . No cable or .. Tags: ASPB448 TAD-6113A* TAD-6111A Motorola pl-259 ASP-552 ASP-268 |
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First line: 456.0MHz Filter Part MP01133 MAXIMUM RATING: Operating Temperature: -40°C +85°C Storage Temperature: -40°C +85°C Maximum Input Power 10dBm ELECTRICAL CHARACTERISTICS: Ambient Temperature: Item Center frequency Insertion loss Bandwidth -1.0dB Bandwidth -3.0dB Amplitude Ripple (452.8 4 Abstract: .. Amplitude Ripple 452.8 ~ 459.2 MHz dB - 0.6 1.0. Amplitude Ripple 452.3 ~ 459.7 MHz dB - 2.0 3 .. 456.0MHz SAW Filter Model: TB0574A TB0574A . Part No: MP01133 MP01133 REV NO: 3. TB0574A TB0574A v3 2. D. FREQUENCY .. Tags: MP01133 |
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First line: SUP40N10-35_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves S Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. RT2 N/A 452.0608 m N/A. RT3 N/A 66.7317 m N/A. RT4 N/A 200.0744 m N/A. Thermal Capacitance Joules/ ° .. Tags: 6852 6164 mosfet SUP40N10-35 RC |
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First line: JAN 7289 transistor 3669 Si7993DP_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching c Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. RF3 14.1535 452.3654 m N/A. RF4 51.9506 262.6024 m N/A. Thermal Capacitance Joules/ °C .. Tags: transistor 3669 M 1535 JAN 7289 8423 Si7993DP RC |
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First line: Si7983DP_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Sing Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. RF3 14.1535 452.3654 m N/A. RF4 51.9506 262.6024 m N/A. Thermal Capacitance Joules/ °C .. Tags: Si7983DP RC |
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First line: Si7358DP_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Sing Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. CF3 452.9107 m 27.1993 m N/A. CF4 1.7837 866.1249 u N/A. Document Number: 73732 Revision 13-Jan 13-Jan .. Tags: Si7358DP RC |
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First line: Si7970DP_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Sing Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. RF3 14.1535 452.3654 m N/A. RF4 51.9506 262.6024 m N/A. Thermal Capacitance Joules/ °C .. Tags: 8423 Si7970DP RC |
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First line: transistor c 6073 SiA914DJ_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characte Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. CT2 1.9819 m 452.2021 u N/A. CT3 34.1116 m 54.4164 u N/A. CT4 1.1100 486.1773 u N/A. www.vishay.com 2 .. Tags: transistor c 6073 SiA914DJ RC |
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First line: SiA912DJ_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Sing Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. CT2 103.0985 u 452.2021 u N/A. CT3 40.8990 m 54.4164 u N/A. CT4 1.1298 486.1773 u N/A. www.vishay .. Tags: 7814 transistor SiA912DJ RC |
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First line: 73686 Si1330EDL_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curv Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. CT3 452.2647 m N/A 10.5289 m. CT4 1.1652 m N/A 3.6906 m. www.vishay.com 2. Document Number: 73686 .. Tags: 73686* mosfet 3067 9713 7909 data book 73686 Si1330EDL RC |
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First line: Si1303EDL_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Sin Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. CT1 452.9197 u N/A 781.7864 u. CT2 8.1825 m N/A 65.2729 u. CT3 254.3411 m N/A 94.2755 m. CT4 2.9163 m N .. Tags: Si1303EDL RC |
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First line: Si7962DP_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Sing Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. RF3 14.1535 452.3654 m N/A. RF4 51.9506 262.6024 m N/A. Thermal Capacitance Joules/ °C .. Tags: Si7962DP RC |
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First line: SiA913DJ_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Sing Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. CT2 1.9927 m 452.2021 u N/A. CT3 34.1260 m 54.4164 u N/A. CT4 1.1120 486.1773 u N/A. www.vishay.com 2 .. Tags: CT3-34 9927 SiA913DJ RC |
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First line: Si7958DP_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Sing Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. RF3 14.1535 452.3654 m N/A. RF4 51.9506 262.6024 m N/A. Thermal Capacitance Joules/ °C .. Tags: 8423 Si7958DP RC |
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First line: 73708 Si7973DP_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curve Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. RF3 14.1535 452.3654 m N/A. RF4 51.9506 262.6024 m N/A. Thermal Capacitance Joules/ °C .. Tags: 73708 Si7973DP RC |
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First line: SI7964DP_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Sing Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. RF3 14.1535 452.3654 m N/A. RF4 51.9506 262.6024 m N/A. Thermal Capacitance Joules/ °C .. Tags: 0837* SI7964DP RC |
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First line: Si7942DP_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Sing Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. RF3 14.1535 452.3654 m N/A. RF4 51.9506 262.6024 m N/A. Thermal Capacitance Joules/ °C .. Tags: 8226 0837* Si7942DP RC |
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First line: Si7960DP_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Sing Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. RF3 14.1535 452.3654 m N/A. RF4 51.9506 262.6024 m N/A. Thermal Capacitance Joules/ °C .. Tags: 0837* Si7960DP RC |
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First line: SiA917DJ_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Sing Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. CT2 1.9927 m 452.2021 u N/A. CT3 34.1260 m 54.4164 u N/A. CT4 1.1120 486.1773 u N/A. www.vishay.com 2 .. Tags: SiA917DJ RC |
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First line: 124RP Abstract: .. -4167 Fax 619 452-5499 Email: sales@spaceelectronics.com http://www.spaceelectronics .. 6. Human body model, 1.5kΩ in series with 100pF 100pF . SEi - Radiation Hardened 124RP 124RP Low Power Quad .. Tags: "90 MeV" datasheet abstract.. |
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First line: SiA511DJ_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Sing Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. CT2 1.9927 m 1.9927 m N/A 452.2021 u 452.2021 u. CT3 34.1260 m 34.1260 m N/A 54.4164 u 54.4164 u. CT4 1 .. Tags: sia511dj* CT3-34 SiA511DJ RC |
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First line: SiA513DJ_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Sing Abstract: .. the R-C thermal model have been derived using curve-fitting techniques. These techniques are .. CT2 1.9927 m 1.9927 m N/A 452.2021 u 452.2021 u. CT3 34.1260 m 34.1260 m N/A 54.4164 u 54.4164 u. CT4 1 .. Tags: 74692 4956 4164 SiA513DJ RC |
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First line: 18000 SERIES MINIATURE SNAP-ATION MOMENTARY PUSHBUTTON SWITHES Abstract: .. Above models have back bezel & cap. Solder lug terminals - snap-in mounting - gold plated silver .. 11.50 .452 1 2 3. 1.80 1.80. 12.00 3.70. .070 .070 .145 .472 6.35 DIA-40UNS DIA-40UNS 6.35 DIA .. Tags: U840 diode u840 u3400 U2400 smooth 283 1.3 137 620 datasheet abstract.. |
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