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Part : MVAM125 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 1,722 Best Price : $27.5520 Price Each : $33.60
Part : MVAM115 Supplier : - Manufacturer : Chip One Exchange Stock : 5 Best Price : - Price Each : -
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MVAM108 Datasheet

Part Manufacturer Description PDF Type
MVAM108 Advanced Semiconductor SILICON VARACTOR DIODE Original
MVAM108 Motorola European Master Selection Guide 1986 Scan
MVAM108M2 Motorola 12V Vrrm, 500pF Capacitance Varactor Diode Scan

MVAM108

Catalog Datasheet MFG & Type PDF Document Tags

MVAM109

Abstract: MVAM108 , high tuning ratio applications. â'¢ High Capacitance Ratio â'" Cr = 15 (Min), MVAM108, 115, 125 â'¢ Guaranteed Diode Capacitance â'" Ct = 440 pF (Min) â'" 560 pF (Max) @ Vr = 1.0 VDc, f = 1.0 MHz, MVAM108 , RATINGS Rating Symbol Value Unit Reverse Voltage MVAM108 VR 12 Volts MVAM109 15 MVAM115 18 , °C 2.8 mW/°C Operating and Storage Junction Tj,Tstg -55 to +125 X Temperature Range MVAM108 , = 10 ¿tAdc) MVAM108 12 â'" â'" MVAM109 15 â'" â'" MVAM115 18 â'" â'" MVAM125 28 â'" â
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OCR Scan
nvam109 motorola mvam109 MVAM115 TUNING DIODE Motorola MVAM125 Am tuning DIODE MVAM115 equivalent C1/C15 C1/C25 L3L7254 VAM10

MVAM109

Abstract: MOTOROLA mvam108 , high tuning ratio applications. â'¢ High Capacitance Ratio â'" Cr = 15 (Min), MVAM108, 115, 125 â'¢ Guaranteed Diode Capacitance â'" Ct = 440 pF (Min) â'" 560 pF (Maxi @ Vr = 1.0 VDc, f = 1.0 MHz, MVAM108 , RATINGS Rating Symbol Value Unit Reverse Voltage MVAM108 Vr 12 Volts MVAM109 15 MVAM115 18 , mW/°C Operating and Storage Junction Tj. Tstg -55 to +125 °C Temperature Range MVAM108 , fiAdc) MVAM108 MVAM109 MVAM115 MVAM125 V(BR)R 12 15 18 28 â'" - Vdc Reverse Current (VR = 8.0 V
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OCR Scan
MOTOROLA mvam108 diode b3l VAM108 MVAM12S

D 92 M - 02 DIODE

Abstract: fro 108 I n ter n a tio n a l S e m ic o n d u c to r , I n c . SILICON TUNING DIODES T U N IN G D IO D E S W ITH V E R Y H IG H C A P A C IT A N C E RA TIO MVAM108 MVAM109 MVAM115 MV1M125 High Capacitance Ratio CR= 15 Min for MVAM108, 115, 125 Guaranteed Diode Capacitance Guaranteed Figure of Merit M AXIM UM RATINGS ( RATING R everse V oltage M V A M 108 M VA M 109 M V A M 1 15 M VAM 125 , 1Ü0D378 ' Fax: (908) 245-5541 0000058 7 bT 3^ 7- CAPACITANCE CURVES - MVAM108 thru MVAM125
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OCR Scan
D 92 M - 02 DIODE fro 108 MVAM-1 M 108 MVAM11S VAIV11

MVAM108

Abstract: varactor diode datasheet MVAM108 SILICON VARACTOR DIODE PACKAGE STYLE DESCRIPTION: The ASI MVAM108 is a Silicon Tuning Varactor Diode. FEATURES INCLUDE: · 15:1 Minimum Tuning Range · Q - 150 Minimum MAXIMUM RATINGS IF 50 mA VR 12 V PDISS 280 mW @ TC = 25 C TJ -55 C to +125 C TSTG -55 C to +125 C O O O O O CHARACTERISTICS SYMBOL NONE O TA = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VBR IR = 10 µA IR VR = 8.0 V Ct VR =
Advanced Semiconductor
Original
varactor diode datasheet varactor

Motorola MVAM125

Abstract: MVAM109 c, f = 1.0 M H z MVAM108* MVAM109* MVAM115* MVAM125* C A SE 182-02, STY LE 1 (T0 , evice Data 5-121 MVAM108 MVAM109 MVAM115 MVAM125 FIG U RE 1 - TYPICAL AM RADIO APPLICATION
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OCR Scan
T0-226AC

VAM109

Abstract: MVAM109 MVAM115 M VAM125 Symbol VR Value 12 15 18 28 50 280 2.8 - 5 5 to +125 Unit Volts MVAM108* MVAM109 , TRANSISTORS, FETs AND DIODES 5 -7 0 MVAM108, MVAM109, MVAM115, MVAM125 FIG URE 1 - T Y P I C A L A
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OCR Scan
VAM109 C1C9 VAM115 C1C25

MVAM109

Abstract: MOTOROLA mvam108 MOTOROLA TECHNICAL DATA SEM ICONDUCTOR MVAM108 MVAM109 MVAM115 MVAM125 v v c SILICON TUNING DIODE . . . d e s ig n e d fo r e le c tr o n ic tu n in g o f A M re c e iv e rs a n d h ig h capacitance, high tu n in g ratio applications. · · High Capacitance Ratio - Cp = 1 5 (Min). MVAM 108, 115, 125 G uaranteed Diode Capacitance - Ct = 4 4 0 pF (M in) - 560 pF (M axi @ V r = 1.0 Vdc, f = 1.0 , n in g ra n g e . MVAM108 Figure 2. Capacitance versus Reverse Voltage MVAM109 Figure 3
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OCR Scan

MVAM109

Abstract: MVAM108 VoÃs Min Device Type f ' PF" ' Min Max ; : 440 560 : ; 12 15 1/8 MVAM108 ,400 520 15 12 1
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OCR Scan
MMBV105G MMBV3102 MMBV109 MV209 MV209 diode TO-226AC 774SLI C3/C25

SA612

Abstract: 2N3565 text) R10 100K C16 0.1 D1 MVAM108 8 1 2 Y1 3.58 MHz Resonator 4 L1 4.7uH (IF
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Original
LM358 2N5485 2N3565 SA612 FT37-43 FT-37-43 XFORMER 2n3565 equivalent transistor U4B LM358 LM78L06 2N2222A

mvam108

Abstract: C8546A I nternational S em ico nducto r , I nc . SILICON TUNING DIODES TUNING DIODES WITH VERY HIGH CAPACITANCE RATIO C8546A thru C8546D High Capacitance Ratio CR= 15 Min for MVAM108, 115, 125 Guaranteed Diode Capacitance Guaranteed Figure of Merit MAXIM UM RATINGS t° SYM BO L VALUE 12 15 18 28 lF PD 50 280 2.8 L , t stg -55 to +125 UNIT Volts ^ C RATING C 8546A C 8546B C 854 6C C 8546D M Reverse V oltage Forw ard C urrent Power D issipation at TA= 2 5 °C Derate above 25°C O
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OCR Scan
C8546B C8546C
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