NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: LESHAN RADIO COMPANY, LTD. Silicon Epicap Diode MMBV109LT1 MMBV109LT1 MBV109T1 MBV109T1 MV209 Designed for , IF PD 280 2.8 Unit MV209 Vdc mAdc 200 2.0 +125 Â55 to +150 TJ T stg 200 1.6 mW mW/°C °C °C DEVICEMARKING MBV109T1 MBV109T1= J4A, MMBV109LT1 MMBV109LT1 =M4A, MV209 = MV209 ELECTRICAL , u Adc) Reverse Voltage Leakage Current ( V R = 25Vdc) Diode Capacitance Temperature Coefficient , - - 0.1 mAdc TC C - 300 - ppm/°C C T Diode Capacitance VR =3.0Vdc, f ... | Original |
2 pages, |
MMBV109LT1 MMBV109L MMBV109 MBV109T1 j4a diode MV209 equivalent MV209 MV209 diode DIODE M4A MMBV109LT1 abstract |
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| Abstract: Package MAXIMUM RATINGS MV209 MMBV109LT1 MMBV109LT1 Rating Symbol Value Unit Reverse Voltage VR 30 Volts , ) MMBV109LT1 MMBV109LT1* MV209* CASE 318-07, STYLE 8 SOT-23 (TO-236AB) 3 0-|H-O 1 CASE 182-02, STYLE 1 (TO-226AC) HK- , Voltage Leakage Current |VR = 25 Vdc) IR - - 0.1 jiAdc Diode Capacitance Temperature Coefficient (Vr = 3.0 Vdc, f = 1.0 MHz) TCC - 300 - ppm/°C Cf, Diode Capacitance Vr = 3.0 Vdc, f = 1.0 MHz PF Q , Nom Max Min Min Max MMBV109LT1 MMBV109LT1, MV209 26 29 32 200 5.0 6.5 (1) Cr is the ratio of Ct measured at 3 ... | OCR Scan |
2 pages, |
transistors marking HK MMBV109LT1 MMBV109L MV209 DIODE M4A MV209 diode MV209 abstract |
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| Abstract: MV209 (SILICON) WC SILICON EPICAP DIODE . . . designed for VHF TV tuning, AFC, general frequency , • Guaranteed Matching^' Tolerance From Oiode to Diode and Group to Group • Supplied, in One-Piece , FIGURE 1 - DIODE CAPACITANCE 40 36 - 3? o 28 z < 24 < ?n < in ill O 12 8.0 , 2.0 3.0 5.0 7.0 10 20 30 SO 70 100 Vfl. REVERSE VOLTAGE(VOLTS! VOLTAGE VARIABLE CAPACITANCE DIODE , apply. CASE 182 02 1404 MV209 (continued) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise ... | OCR Scan |
2 pages, |
tcc 300 MV209 diode MV209 MV209 equivalent MV209 abstract |
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| Abstract: ON Semiconductort MMBV109LT1 MMBV109LT1, MV209 Silicon Epicap Diodes Designed for general frequency , · Available in Surface Mount Package MMBV109LT1 MMBV109LT1 and MV209 are Preferred Devices 26Â32 pF VOLTAGE VARIABLE CAPACITANCE DIODES MAXIMUM RATINGS Rating Symbol MMBV109LT1 MMBV109LT1 MV209 3 , ) MMBV109LT1 MMBV109LT1 = M4A, MV209 = MV209 3 Cathode ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise , - 0.1 uAdc Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) TCC ... | Original |
8 pages, |
SMD310 MMBV109LT1 MV209 diode MV209 datasheet abstract |
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| Abstract: February, 2006 - Rev. 5 1 Publication Order Number: MMBV109LT1/D MMBV109LT1/D MMBV109LT1 MMBV109LT1, MV209 Ct, Diode , MMBV109LT1 MMBV109LT1, MV209 Preferred Devices Silicon Epicap Diodes Designed for general frequency , IF 200 mAdc Forward Power Dissipation MMBV109LT1 MMBV109LT1 @ TA = 25°C Derate above 25°C MV209 @ , 1 Anode Reverse Voltage Leakage Current (VR = 25 Vdc) Diode Capacitance Temperature , MV209 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note ... | Original |
4 pages, |
MV209G MARKING C25 SOT23 MERIT INCH MMBV109LT1 MMBV109LT1G MMBV109LT3 MMBV109LT3G MV209 diode MV209 equivalent "Variable Capacitance Diodes" MV209 DIODE M4A MMBV109LT1 abstract |
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| Abstract: ON Semiconductort MBV109T1 MBV109T1 MMBV109LT1 MMBV109LT1 * MV209 * Silicon Epicap Diodes Designed for general , MV209 Unit Reverse Voltage VR 30 Vdc Forward Current IF 200 mAdc Forward , MARKING MBV109T1 MBV109T1 = J4A, MMBV109LT1 MMBV109LT1 = M4A, MV209 = MV209 ELECTRICAL CHARACTERISTICS (TA = 25°C unless , = 25 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) 3 1 Cathode Anode SCÂ70/SOT 70/SOTÂ323 Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MBV109T1 MBV109T1 ... | Original |
8 pages, |
SMD310 MV209 diode MV209 MMBV109LT1 MMBV109L MBV109T1 datasheet abstract |
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| Abstract: MMBV109LT1 MMBV109LT1* MV209* Silicon Epicap Diodes Designed for general frequency control and tuning applications , Reverse Voltage MBV109T1 MBV109T1 MMBV109LT1 MMBV109LT1 MV209 CASE 318  08, STYLE 6 SOT 23 (TO  236AB 236AB) Unit , TOÂ92 (TOÂ226AC 226AC) DEVICE MARKING MBV109T1 MBV109T1 = J4A, MMBV109LT1 MMBV109LT1 = M4A, MV209 = MV209 ELECTRICAL , Characteristic - 300 - ppm/°C Reverse Voltage Leakage Current (VR = 25 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF ... | Original |
8 pages, |
SMD310 DIODE M4A j4a diode MBV109T1 MMBV109L MMBV109LT1 MV209 ansi y14.5m-1982 CR SOT-23 C25 diode marking C3 sot-23 MV209 diode MBV109T1/D MBV109T1/D abstract |
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| Abstract: MMBV109LT1 MMBV109LT1 * MV209* Silicon Epicap Diodes Designed for general frequency control and tuning applications , Reverse Voltage MBV109T1 MBV109T1 MMBV109LT1 MMBV109LT1 MV209 CASE 318  08, STYLE 6 SOT 23 (TO  236AB 236AB) Unit , TOÂ92 (TOÂ226AC 226AC) DEVICE MARKING MBV109T1 MBV109T1 = J4A, MMBV109LT1 MMBV109LT1 = M4A, MV209 = MV209 ELECTRICAL , Characteristic - 300 - ppm/°C Reverse Voltage Leakage Current (VR = 25 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF ... | Original |
8 pages, |
SMD310 MV209 MMBV109LT1 MMBV109L MBV109T1 MBV109T1/D MBV109T1/D abstract |
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| Abstract: 32 3 5 250 MV209* •Case 318 "Case 182 AM Radio CASE 182-02 (TO-226AC) TO-92 f- ' • High Capacitance Ratio â- :â- . â- â- • Guaranteed Diode Capacitance : • Close Matching ' •'• - . °T Q @ 1Vdc, 1 , MVAM115 MVAM115 fW 560 28 15 1/25 MVAM125 MVAM125 TYPICAL CHARACTERISTICS Diode Capacitance 40 36 32 Li- la. 28 , 1 10 30 Vr, REVERSE VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS Diode Capacitance versus Reverse Voltage 6 10 14 18 22 Vr, REVERSE VOLTAGE (VOLTS) m MOTOROLA 8 TUNING AND SWITCHING DIODE SELECTOR ... | OCR Scan |
1 pages, |
MVAM125 MMBV105G MMBV3102 MV209 cf 318 MVAM108 MVAM115 MMBV109 MV209 diode MVAM109 774SLI 774SLI abstract |
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| Abstract: MMBV109LT1 MMBV109LT1 * MV209* Silicon Epicap Diodes Designed for general frequency control and tuning applications , Reverse Voltage MBV109T1 MBV109T1 MMBV109LT1 MMBV109LT1 MV209 CASE 318  08, STYLE 6 SOT 23 (TO  236AB 236AB) Unit , TOÂ92 (TOÂ226AC 226AC) DEVICE MARKING MBV109T1 MBV109T1 = J4A, MMBV109LT1 MMBV109LT1 = M4A, MV209 = MV209 ELECTRICAL , Characteristic - 300 - ppm/°C Reverse Voltage Leakage Current (VR = 25 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF ... | Original |
6 pages, |
SMD310 MV209 MMBV109LT1 MMBV109L MBV109T1 marking C3 sot-23 DIODE M4A CR SOT-23 MBV109T1/D MBV109T1/D abstract |
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| * Library of diode model parameters * * Copyright 1989-1995 by MicroSim Corporation * Neither + ) *$ * * * MANUFACTURERS PART NO. = 914NGTS 914NGTS 914NGTS 914NGTS * MANUFACTURER = SPRAGUE * TYPE: DIODE * SUBTYPE: RECTIFIER * THE FOLLOWING * SIMULATIONS IF USED AS A RECTIFIER OR SWITCHING DIODE. * * * MEASURED TRR = 344.0NS, SIMULATED TRR = 96 PART NO. = 914NGTS 914NGTS 914NGTS 914NGTS * MANUFACTURER = SPRAGUE * TYPE: DIODE * SUBTYPE: RECTIFIER * THIS FILE CONTAINS * AS A RECTIFIER OR SWITCHING DIODE * * * * MEASURED TRR = 202.0NS, SIMULATED TRR = 82.64NS www.datasheetarchive.com/files/spicemodels/misc/schematics_layouts/diode.lib |
Spice Models | 17/06/1998 | 619.54 Kb | LIB | diode.lib |
| * Library of diode model parameters * * Copyright OrCAD, Inc. 1998 All Rights Reserved *$ * * GENERIC FUNCTIONAL EQUIVALENT = 1N3940 1N3940 1N3940 1N3940 * TYPE: DIODE * SUBTYPE: RECTIFIER * * THIS IS A TEMPERATURE . = THD4003 THD4003 THD4003 THD4003 * MANUFACTURER = SPRAGUE * TYPE: DIODE * SUBTYPE: RECTIFIER * THE FOLLOWING SECTION -6 + ) .ENDS *$ * * MANUFACTURERS PART NO. = THD4003 THD4003 THD4003 THD4003 * MANUFACTURER = SPRAGUE * TYPE: DIODE 4097 * TYPE: DIODE * SUBTYPE: VOLTAGE REG GP * THIS IS A PRELIMINARY MODEL FOR THE SIMULATION OF THE www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/diode.lib |
Spice Models | 29/07/2012 | 634.77 Kb | LIB | diode.lib |
| * Library of diode model parameters * * Copyright Cadence Design Systems, Inc. 2002 All Rights *$ * * GENERIC FUNCTIONAL EQUIVALENT = 1N3940 1N3940 1N3940 1N3940 * TYPE: DIODE * SUBTYPE: RECTIFIER * * THIS IS A TEMPERATURE . = THD4003 THD4003 THD4003 THD4003 * MANUFACTURER = SPRAGUE * TYPE: DIODE * SUBTYPE: RECTIFIER * THE FOLLOWING SECTION -6 + ) .ENDS *$ * * MANUFACTURERS PART NO. = THD4003 THD4003 THD4003 THD4003 * MANUFACTURER = SPRAGUE * TYPE: DIODE 4097 * TYPE: DIODE * SUBTYPE: VOLTAGE REG GP * THIS IS A PRELIMINARY MODEL FOR THE SIMULATION OF THE www.datasheetarchive.com/files/spicemodels/misc/diode.lib |
Spice Models | 09/10/2003 | 634.72 Kb | LIB | diode.lib |
| - The Power Clamp curves have been omitted since there is no power clamp diode www.datasheetarchive.com/files/nxp/misc/support/models/aup1g/ibis/aup1gu04.ibs |
NXP | 20/05/2008 | 275.67 Kb | IBS | aup1gu04.ibs |
| - The Power Clamp curves have been omitted since there is no power clamp diode www.datasheetarchive.com/files/nxp/misc/support/models/aup2g/ibis/aup2gu04.ibs |
NXP | 20/05/2008 | 275.77 Kb | IBS | aup2gu04.ibs |
| have been omitted on digital inputs and outputs since there is no power clamp diode www.datasheetarchive.com/files/nxp/misc/support/models/aup1g/ibis/aup1z125.ibs |
NXP | 20/05/2008 | 619.95 Kb | IBS | aup1z125.ibs |
| inputs and outputs since there is no power clamp diode. - Non-monotonic sections below www.datasheetarchive.com/files/nxp/misc/support/models/aup1g/ibis/aup1z04.ibs |
NXP | 13/08/2008 | 580.81 Kb | IBS | aup1z04.ibs |