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Part : MTP3055EL Supplier : Motorola Manufacturer : ComSIT Stock : 74 Best Price : - Price Each : -
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MTP3055EL Datasheet

Part Manufacturer Description PDF Type
MTP3055EL Toshiba Power MOSFETs Cross Reference Guide Original
MTP3055EL Motorola N-channel TMOS power FET logic level. 60 V, 12 A, Rds(on) 0.18 Ohm. Scan
MTP3055EL Motorola Switchmode Datasheet Scan
MTP3055EL N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
MTP3055EL N/A FET Data Book Scan
MTP3055EL N/A Shortform Datasheet & Cross References Data Scan

MTP3055EL

Catalog Datasheet MFG & Type PDF Document Tags

MTP3055EL

Abstract: MTP-3055EL ) Specified at 150°C Y TMOS MAXIMUM RATINGS {Tj = 25°C unless otherwise noted) MTP3055EL Motorola , (XSTRS/R F) b*E J> â  L,3b7254 0^^0020 =143 «MOTb MTP3055EL ELECTRICAL CHARACTERISTICS â'" continued , POWER MOSFET DATA 3-434 MOTOROLA SC (XSTRS/R F) MTP3055EL hôE D â  b3b72SH 00^602^ flöT TYPICAL , (°C) MOTOROLA TMOS POWER MOSFET DATA 3-435 MTP3055EL MOTOROLA SC (XSTRS/R F) bflE D â  b3b7S54 , MOSFET DATA 3-436 MTP3055EL MOTOROLA SC (XSTRS/R F) bôE D â  b3b72S4 00^0031 M3fi â  MOTb
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OCR Scan
MTP-3055EL 221A-06 AN569 100QC
Abstract: MTP3055EL Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)60 V(BR)GSS (V)15 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)26 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40# Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case3.12 Thermal Resistance Junc-Amb.62.5 V(GS)th Max. (V)2.0 V(GS)th (V) (Min)1.0 @(VDS) (V) (Test Condition)15.0 @I(D) (A) (Test Condition)1.0m I(DSS) Max American Microsemiconductor
Original

MTP3055EL

Abstract: 3055el MOTOROLA TMOS POWER MOSFET DATA 3-817 MTP3055EL ELECTRICAL CHARACTERISTICS - continued (T c = 2 5 C , 7 5 (Typ) - MOTOROLA TMOS POWER MOSFET DATA 3-818 MTP3055EL T Y P IC A L ELE C TR IC A , TEMPERATURE 0 MOTOROLA TMOS POWER MOSFET DATA 3-819 MTP3055EL Figure 7. Breakdown Voltage Variation , . Therm al Response MOTOROLA TMOS POWER MOSFET DATA MTP3055EL C O M M U T A T IN G S A FE O P E , BRIDSS VDD ' I MOTOROLA TMOS POWER MOSFET DATA 3-821 MTP3055EL Figure 15. Capacitance
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OCR Scan
3055el TP3055EL TP3055E 3055E TQ-220AB

NDP406BL

Abstract: DP408 NDP406BEL NDP406BL 150 6/5 12 60 150 MTP3055EL 180 15 6/5 4 0/5 12 75 150 N
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OCR Scan
P610BL NDP510AL NDP706AL NDP606AL NDP505AEL NDP505AL DP408 DP706 NDP405AL DP608 P610B NDP710AEL DP710AL NDP710BEL NDP710BL NDP610AEL DP610AL

MTP3055EL

Abstract: MTP n-channel mosfet to 220 TA 18N 10E LS ^ 80 0.3 0.135 2.5 7.5 6 MTD5N08L M TP15N08EL M TD3055EL MTP3055EL 60
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OCR Scan
MTP n-channel mosfet to 220 TP25N10 motorola TO-252 TP12N10 Power MOSFETs Cross Reference Guide 221D-02 T0-220AB TP12N10EL TA11N10ELS TP25N10EL TP30N06EL

NDP406BL

Abstract: NDP508AEL 12/5 24 NDP406AEL NDP406AL 100 7.5/5 15 40 NDP406BEL NDP406BL 150 6/5 12 MTP3055EL 180 6/5 12
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OCR Scan
NDP710AL NDP610AL NDP610BEL NDP510AEL NDP510BEL NDP508AEL NDP405BL NDP605AL NDP408BL ndp508al NDP610BL

68HC24

Abstract: 14049UB MTP3055EL iD = 6 Amps unless noted. One gate used unless noted. Rp td(on) trise td(off) tfall Driver (fl , tr-L Tao \iF TlOnF Rp* §3.3 -=â  MTP3055EL 74LS04 Rp - 560 à 74F04 Rp «220 £2 (b) Schottky TTL , Driving an MTP3055EL MOTOROLA 8 AN 1102 applied to the drain. When this happens the power MOSFET may , 2, 1988, Ch 1-4, 6, and pp. 3.711-716. Motorola MTP3055EL Designer Data Sheet, MTP3055EUD, 1988
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OCR Scan
68HC24 14049UB mc14000 series 74LS04 Hex Inverter Gate function table 74LS240-74HC240 74LS04 NOT gate AN1102/D AN1102 25178T

Samsung Tantalum Capacitor

Abstract: MTP3055EL MTP3055EL 5 n MTP3055EL C2 47 µF 5 EXT GND GND TC110xx TC110xx VOUT C1 33µF , F93 Series Sanyo OS-CON Series Motorola MTP3055EL MTD20N03 NPN Zetex ZTX694B Matshushita
Microchip Technology
Original
TC110 IN5817 Samsung Tantalum Capacitor TC110X torroidal core inductor CAPACITOR 47uF/16V TC1102 9410DY DS21355A TC110-2

tc110501

Abstract: 3-1: BOOTSTRAPPED OPERATION L1 100µH D1 IN5817 VOUT n MTP3055EL C2 47µF 5 4 , ON VIN NON-BOOTSTRAPPED OPERATION L1 100µH D1 IN5817 VOUT n MTP3055EL C2 47µF 5 , Series Sprague 595D Series Transistors Matsushita MA735 Series ON Semiconductor MTP3055EL
Microchip Technology
Original
tc110501 11F-3 DK-2750 D-81739 DS21355B-

IN5817 diode

Abstract: mtp3055el 3-1: BOOTSTRAPPED OPERATION L1 100µH D1 IN5817 VOUT n MTP3055EL C2 47µF 5 4 EXT , NON-BOOTSTRAPPED OPERATION L1 100µH D1 IN5817 VOUT n MTP3055EL C2 47µF 5 4 EXT GND , Matsushita MA735 Series ON Semiconductor MTP3055EL MTD20N03 Nichicon F93 Series Sanyo OS-CON
Microchip Technology
Original
IN5817 diode 12v dc soft start motor control diagram TC110301ECT equivalent transistor K 2767 DS21355 Nordic Soft start IN581

TC54

Abstract: MTP3055EL VIN RL VOUT Pwr Sply MTP3055EL TC54VN VOUT TC54Vx POWER GOOD VSS VSS
TelCom Semiconductor
Original
TC54 MC34164P3 equivalent TC54VN4302EZB tc54vn43 MC33164P-5 MC34064P-5 TC54VC TC54V

MTP50N05E

Abstract: MTP25N10E 100 25 TO-220AB MTP3055EL MOT N 60 ±15 12 40 ±100 ±15 1 60 1 2 0. 18 5 6 5 6 400* 175* 30* 25
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OCR Scan
MTP25N05E MTP25N05L MTP25N06 MTP25N06E MTP25N06L MTP25N10 MTP50N05E MTP25N10E MTP50N05 MTP40N06M MTP50N05EL

mc33167 applications

Abstract: MC34167 620 D4 1N4148 Thermal Q2 MTP3055EL Reference + D3 1N967A + D2 1N5822 EA , Engineering Inc. MC34167: 5903B, or 5930B MTP3055EL: 5925B Figure 21 shows that the MC34167 can be configured
ON Semiconductor
Original
MC33167 1N5825 mc33167 applications GMT-0223 dc/tx/1/2/1257/MC34167 Application Notes ac step-up transformer winding awg MUR415 2N3906
Abstract: VCC Rl MTP3055EL 4.6V â'" Overheating of the logic level power MOSFET due to insufficient -
OCR Scan
MC34064 MC33064 MPSW51A

33064

Abstract: 34064 MTP3055EL 4.6V - 7^ - Overheating of the logic level power MOSFET due to insufficient gate
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OCR Scan
33064 34064 MC34064P5 solar charger controller 33064 8 pin POWER WITH 34064 SO-81 1N5819 1N756

Infrared Sensing and Data Transmission

Abstract: xr567 MLED81 Data To Be Sent MTP3055EL 50 kHz Square Wave Figure 3. Basic IR Source Drive for CW , usually much too slow. Another solution is an inexpensive logic­level FET such as the MTP3055EL, its
ON Semiconductor
Original
Infrared Sensing and Data Transmission xr567 MRD360 MC145030 MC34072 photo transistor mrd360 AN1016/D

24v to 12v converter CIRCUIT DIAGRAM

Abstract: converter circuit diagram 50V DC to 12v dc R2 1 6.8k COUT 1000 + D3 1N967A D2 1N5822 VOUT + 28V/0.6A *RG 620 Q2 MTP3055EL Q1 2 D1 1N5822 L 190µH , MTP3055EL: 5925B Figure above shows that the TC33166 can be configured as a step­up/down converter with the
TelCom Semiconductor
Original
24v to 12v converter CIRCUIT DIAGRAM converter circuit diagram 50V DC to 12v dc TDK H5C2 1n5404 diode GMT 0223 24V DC TO 220 V AC CONVERTER TC33066 D-82152

TC54

Abstract: mc33064p-5 270 VIN VIN TC54VN RL Pwr Sply VOUT TC54Vx VOUT Power Good MTP3055EL VSS
Microchip Technology
Original
mc33064p-5 MC33164P-3 MC34164P-3 MC34164P-5 TL7757CLP TL7757ILP DS00779A-

MC341

Abstract: m4164 VOLTAGE GATE DRIVE PROTECTION USING THE MC3X1M-5 Vcc a 1 MTP3055EL - - - -
Motorola
Original
MC34164 MC341 m4164 64P-5 64P5 MC33164 MC341W3 MC341U-5

AN779

Abstract: AN-779 MTP3055EL VSS VSS FIGURE 4: MOSFET low drive protection. FIGURE 6: Power good monitor. OTHER
Microchip Technology
Original
AN779 AN-779 using the TC54 voltage detector TC54VN4502EZB DS00779A

scr pulse battery charger schematic

Abstract: trickle battery charger circuit using scr header 2-pin single-row header MTP3055EL FET 2N3904 TIP42 1M 5% 1 4 W 69.8K 1% 1 4 W 30.1K 1% 1 4 , /D13 1N5821 D10/D14 1N4001 Q1 TIP120 or MTP3055EL Q2, Q5 2N7000 Q3, Q6 , TIP120 or MTP3055EL LOAD RSB 0.1 1% 3W DIS R15/R17 D10/D14 1N4001 DCC BATA/B Q3/Q6
Unitrode
Original
scr pulse battery charger schematic trickle battery charger circuit using scr SCR trickle charger circuit 232264063103 motorola 3507 transistor P8008 U-507

P50N05

Abstract: p50n06 DATA MC34166 MC33166 Figure 20. Step-Up/Down Converter 02 MTP3055EL D2 1N5822 - o V0 28 , MTP3055EL: 5925B Figure 20 shows that the MC34166 can be configured as a step-up/down converter with the
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OCR Scan
MTP36N06E P50N05 p50n06 tp50n05e BUZ11 BUZ11A BUZ20 BUZ21 BUZ71 BUZ71A
Abstract: R2 1 6.8k COUT 1000 + D3 1N967A D2 1N5822 VOUT + 28V/0.6A *RG 620 Q2 MTP3055EL Q1 2 D1 1N5822 L 190µH , MTP3055EL: 5925B Figure above shows that the TC33166 can be configured as a step­up/down converter with the -
OCR Scan
C34166 C33166 I7225

DIODE Z1 04 833 motorola

Abstract: MC33166 4.7 k R1 1.5 k + D3 1N967A R2 6.8 k CO 1000 *RG 620 Q2 MTP3055EL D2 1N5822 + Q1 2 Cin 330 D1 1N5822 L , : 5903B, or 5930B MTP3055EL: 5925B Figure 21 shows that the MC34166 can be configured as a step-up/down
Motorola
Original
DIODE Z1 04 833 motorola Nippon capacitors MC33166D2T MC33166T MC33166TH MC33166TV MC34166/D

PT3595

Abstract: TDK t6 100 25 TO-220AB MTP3055EL MOT N 60 ±15 12 40 ±100 ±15 1 60 1 2 0. 18 5 6 5 6 400* 175* 30* 25
ON Semiconductor
Original
MC34166TH PT3595 TDK t6 transistor mtp 3055e mc34166t 58350-A2 MC33166D2TR4 MC34166D2T MC34166D2TR4 MC34166T MC34166TV
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