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MTH5N100 Datasheet

Part Manufacturer Description PDF Type
MTH5N100 Motorola Switchmode Datasheet Scan
MTH5N100 Motorola European Master Selection Guide 1986 Scan
MTH5N100 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan
MTH5N100 N/A Shortform Datasheet & Cross References Data Scan
MTH5N100 N/A Semiconductor Master Cross Reference Guide Scan
MTH5N100 N/A FET Data Book Scan
MTH5N100 On Semiconductor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS Scan

MTH5N100

Catalog Datasheet MFG & Type PDF Document Tags

MTH5N100

Abstract: 5n95 TT TMOS Order this data sheet by MTH5N95/D MTH5N95 MTH5N100 MTM5N95 MTM5N100 TMOS POWER FETs 5 , 275 °c MTM5N95 MTM5N100 CASE 1-05 TO-204AA MTH5N95 MTH5N100 CASE 340-01 TO-218AC TMOS and Designer , 300 ¿is, Duty Cycle ^ 2%. MOTOROLA MTH5N95 â'¢ MTH5N100 MTM5N95 â'¢ MTH5N100 TYPICAL ELECTRICAL , 200 MTH5N95 â'¢ MTH5N100 MTM5N95 â'¢ MTH5N100 MOTOROLA SAFE OPERATING AREA INFORMATION 4 10 20 40 , . Thermal Response 100 200 500 1 k MTH5N95 â'¢ MTH5N100 MTM5N95 â'¢ MTH5N100 MOTOROLA Figure 10
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OCR Scan
5N100 5n95 0610L AN569 mps 2108

TL43I

Abstract: TH5N100 half-bridge topology as an alternative, two M TP4N50s will do the same job as a single MTH5N100. The amount of silicon in the MTH5N100 is 40 percent greater than the total sili con in two M TP4N50's. It is not surprising, therefore, that a single MTH5N100 is more expensive than a pair of MTP4N50s. It is also true that , in tim idating. T he on -resistan ce o f an MTH5N100, for example, is specified at 3 ohms cold , OSFET's input gate capacitance. Again considering the 1000-volt MTH5N100, an inspection of the data
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OCR Scan
C74061 TL43I TH5N100 AR326 EC52-3C8 Ferroxcube EC52 AR326/D

mtp6n6

Abstract: an1043 motorola components are inverted. The listing of MTH5N100 and MTP3055E library is given in the Appendix. For the , significant since power MOSFETs of the E-series {Energy) can now withstand Vpp= 15 V J 50 Q 3 MTH5N100 VG=10V Figure 20. Undamped inductive Switching with MTH5N100: V0i Jill' "l , Switching with MTH5N100: VDS = 100 V/div. ID = 200 mA/div, VGS = 10 V/div, Time = 500 ns/div Simulation , avalanche the MTH5N100 in the test configuration shown in Figure 21, but to check the over-voltage value at
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OCR Scan
mtp6n6 an1043 motorola AN1043 Spice Model for TMOS Power MOSFETs motorola superior 600 ssd MTP305SE MTP15N06E AN1043/D

MTH13N50

Abstract: MTH40N10 POWER TRANSISTORS â'" TMOS PLASTIC (continued) Plastic TMOS Power MOSFETs â'" TO-218AC VBR(DSS) (Volts) Min rDS(on) @ 'D (Ohms) (Amp) Max Device 'D(Cont) (Amp) Max PD @ Tc = 25°C (Watts) Max 1000 3 2.5 MTH5N100 5 150 950 MTH5N95 900 3 MTH6N90 6 850 MTH6N85 600 1.2 MTH6N60 0.5 4 MTH8N60 8 550 1.2 3 MTH6N55 6 0.5 4 MTH8N55 8 500 0.8 3.5 MTH7N50 7 0.4 7 MTH13N50 13 450 0.8 3.5 MTH7N45 7 150 0.4 7 MTH13N45 13 400 0.55 4 MTH8N40 8 0.3 7.5 MTH15N40 15 350 0.55 4
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OCR Scan
MTH8P20 MTH15N20 MTH30N20 MTH35N15 MTH25N10 MTH40N10 MTH35N05 MTH25N08 MTH8N35 MTH15N35 MTH8P18

MTE100N05

Abstract: MTE200N05 0.25 0. 08 10 15 10 15 3200» 515* 90* 25 CASE340B-03 MTH5N100 MOT N 1000 ±20 5 150 ±100 Â
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OCR Scan
MTE65N15 MTE75N08 MTE75N10 MTE100N05 MTE100N06 MTE120N18 MTE200N05 MTE120N20 CASE353-01

MTH8P20

Abstract: MTH13N50 ) @ 'D (Ohms) (Amp) Max Device 'D(Cont) (Amp) Max PD @ Tc = 25°C (Watts) Max 1000 3 2.5 MTH5N100 5
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OCR Scan
MTM2P50 MTP2P45 T0204AA MTH20N15 MTH35N06 MTH40N06 TG-204 204AA MTP2P50 220AB MTM2P45

MFE9200

Abstract: BUZ84A 3-287 3 2.5 MTH5N100 5 . 3-272 950 MTH5N95 3-272 900 1.8 4 MTH8N90 8 170 3-308 3 3 MTH6N90 6
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OCR Scan
MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M DK101/D MTP2955 T-97-60 0020-H

1RFZ40

Abstract: 1RF150 150 - 3-287 3 2.5 MTH5N100 5 . 3-272 950 MTH5N95 3-272 900 1.8 4 MTH8N90 8 170 3-308 3 3
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OCR Scan
1RFZ40 1RF150 MTP25N10E MTP35N06E mth7n50 Transistor BUZ80a equivalent MTP3P25 MTP5P25 MTP8P25 IRF9640 IRF9630 MTP5P20

MTH13N50

Abstract: MRF531 : Industry Type: MTH30N20 STI Type: MTH5N100 Notes: Breakdown Voltage: 1000 Continuous Current: 5 RDS(on , : 0.5 Case Style: TO-218 Polarity: Industry Type: MTH5N100 STI Type: MTH30N25 Notes: Breakdown
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Original
MRF531 MTM565 MM1758 MM3220 MM3004 MM3904 MJE8502A MJF16010A MJF16018 MJF16206 MJF16204 MJF16212

801-2003-01

Abstract: Cambion peltier : Industry Type: MTH30N20 STI Type: MTH5N100 Notes: Breakdown Voltage: 1000 Continuous Current: 5 RDS(on , : 0.5 Case Style: TO-218 Polarity: Industry Type: MTH5N100 STI Type: MTH30N25 Notes: Breakdown
Linear Technology
Original
801-2003-01 Cambion peltier mosfet 10a 500v 40khz regulator 48V peltier cooler wiring diagram LT1070 AN-25 AN25-23 AN25-24