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Part : MTB52N06VL Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 946 Best Price : $0.42 Price Each : $0.42
Part : MTB52N06VLT4 Supplier : ON Semiconductor Manufacturer : ComSIT Stock : 800 Best Price : - Price Each : -
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MTB52N06V Datasheet

Part Manufacturer Description PDF Type
MTB52N06V Motorola TMOS POWER FET 52 AMPERES 60 VOLTS Original
MTB52N06V On Semiconductor Power MOSFET 52 A, 60 V Original
MTB52N06V/D On Semiconductor TMOS POWER FET 52 AMPERES 60 VOLTS Original
MTB52N06V-D On Semiconductor Power MOSFET 52 Amps, 60 Volts N-Channel D2PAK Original
MTB52N06VL Motorola TMOS POWER FET 52 AMPERES 60 VOLTS Original
MTB52N06VL On Semiconductor Power MOSFET 52 A, 60 V, Logic Level Original
MTB52N06VL Toshiba Power MOSFETs Cross Reference Guide Original
MTB52N06VL/D On Semiconductor TMOS POWER FET 52 AMPERES 60 VOLTS Original
MTB52N06VL-D On Semiconductor Power MOSFET 52 Amps, 60 Volts, Logic Level N-Chan Original
MTB52N06VLT4 On Semiconductor Power MOSFET 52 A, 60 V, Logic Level Original
MTB52N06VT4 Motorola Transistor Original
MTB52N06VT4 On Semiconductor Power MOSFET 52 A, 60 V Original

MTB52N06V

Catalog Datasheet MFG & Type PDF Document Tags

marking code 024 sod

Abstract: Week ORDERING INFORMATION Device MTB52N06V MTB52N06VT4 Package D2PAK D2PAK Shipping 50 Units/Rail , MTB52N06V Preferred Device Power MOSFET 52 Amps, 60 Volts N-Channel D2PAK This Power MOSFET , 62.5 50 260 °C/W MTB52N06V YWW °C 1 Gate MTB52N06V Y WW 2 Drain 3 Source 1. When , : MTB52N06V/D MTB52N06V ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF , ta tb QRR LD nH - - - 3.5 4.5 7.5 - - nH - LS http://onsemi.com 2 MTB52N06V TYPICAL
ON Semiconductor
Original
marking code 024 sod

MTB52N06V

Abstract: SMD310 MOTOROLA Order this document by MTB52N06V/D SEMICONDUCTOR TECHNICAL DATA TM Data Sheet VTM MTB52N06V Designer's TMOS Power Field Effect Transistor D2PAK for Surface Mount , , Inc. 1996 Power MOSFET Transistor Device Data 1 MTB52N06V ELECTRICAL CHARACTERISTICS (TJ = , = 3 x SIGMA 2 Motorola TMOS Power MOSFET Transistor Device Data MTB52N06V TYPICAL , Voltage 3 MTB52N06V POWER MOSFET SWITCHING Switching behavior is most easily modeled and
Motorola
Original
SMD310 AN569 TMOS E-FET

AN569

Abstract: MTB52N06V MTB52N06V D2PAK 50 Units/Rail MTB52N06VT4 D2PAK 800/Tape & Reel Preferred devices are , MTB52N06V Preferred Device Power MOSFET 52 Amps, 60 Volts N­Channel D2PAK This Power , CASE 418B STYLE 2 2 1 3 °C/W MTB52N06V YWW °C 260 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2 Drain 1 Gate MTB52N06V Y WW 3 , , 2000 November, 2000 ­ Rev. 4 1 Publication Order Number: MTB52N06V/D MTB52N06V
ON Semiconductor
Original

CIL TRANSISTOR 188

Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB52N06V/D Designer's TM Data Sheet TM O S VTM MTB52N06V Motorola PrtfsrrM l Dw tc* Power Field Effect Transistor D2PAK for , overall value. REV 3 ©Motorola, Inc. 1996 (M) M O TO R O LA MTB52N06V ELECTRICAL , Motorola T M O S Power M O S F E T Transistor Device Data MTB52N06V Or, TOTAL CHARGE (nC) Rq , MTB52N06V S A F E O PERATIN G A R E A VDs, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated
-
OCR Scan
CIL TRANSISTOR 188 418B-02
Abstract: MOTOROLA Order this document by MTB52N06V/D SEMICONDUCTOR TECHNICAL DATA â"¢ Data Sheet Vâ"¢ MTB52N06V Designer's TMOS Power Field Effect Transistor D2PAK for Surface Mount , Power MOSFET Transistor Device Data 1 MTB52N06V ELECTRICAL CHARACTERISTICS (TJ = 25°C unless , '" Typ Cpk = 3 x SIGMA 2 Motorola TMOS Power MOSFET Transistor Device Data MTB52N06V TYPICAL , . Drainâ'"Toâ'"Source Leakage Current versus Voltage 3 MTB52N06V POWER MOSFET SWITCHING Switching behavior is Motorola
Original
Abstract: â"¢ Data Sheet MTB52N06V TMOS Vâ"¢ Power Field Effect Transistor D2PAK for Surface Mount , otorola, Inc. 1996 MTB52N06V ELECTRICAL CHARACTERISTICS ( T j = 25°C unless otherwise noted) Typ , 2 3 x SIG M A I Motorola TMOS Power MOSFET Transistor Device Data MTB52N06V TYPICAL , rain -T o -S ou rce Leakage Current versus Voltage 3 MTB52N06V POWER MOSFET SWITCHING , MOSFET Transistor Device Data MTB52N06V Oy, TOTAL CHARGE (nC) RG , GATE RESISTANCE (OHMS -
OCR Scan
TB52N06V/D

NTP3055AV

Abstract: NTP3055 MTB50N06VLT4 MTB50N06VT4 MTB52N06V MTB52N06VL MTB52N06VLT4 MTB52N06VT4 MTB60N06HD MTB60N06HDT4 MTB75N03HDL
ON Semiconductor
Original
MMFT3055ELT1 MMFT3055VLT1 NTF3055-100T1 NTMS3P03R2 NTP13N10 NTP3055AV NTP3055 MTD20P03HDLT4 active MTD2955VT4 MTD3055ELT4 MGSF1P02ELT1/LT3 MGSF1P02LT1/LT3 MGSF3433VT1 MGSF3441VT1 MGSF3455VT1 MMBF0202PLT1

IRFZ44N complementary

Abstract: IRF3205 COMPLEMENTARY 55V UltraFET MOSFETs Competitive Cross Reference PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRF1010NS IRF3205 IRF3205L IRF3205S IRFZ24A IRFZ24N IRFZ34N IRFZ34NS IRFZ44A IRFZ44N IRFZ44NS IRFZ48N IRFZ48NS MTB52N06V TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-263 TO-220 TO-262 TO-263 TO
Harris Semiconductor
Original
HRF3205 HUF75329P3 NBP6060 LC-98045 IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N IRF3205 TO-220 HUF75337P3 HUF75321P3 HUF75309P3 HUF75339P3

NTP3055AV

Abstract: NTP3055 MTB50N06VLT4 MTB50N06VT4 MTB50P03HDL MTB50P03HDLT4 MTB52N06V MTB52N06VL MTB52N06VLT4 MTB52N06VT4
ON Semiconductor
Original
MTB20N20E MTB3N100ET4 MTB3N120E MTB3N60ET4 MTP27N10E MTP5P25 irf630 irf640 IRF540 0708B MTB1306 08-DEC-2000 S21431 RYFV70 T0220 MTB1306T4 MTB15N06V
Abstract: ltag e tra n sie n ts. MTB52N06V M o t o r o la P re fe rre d D e v ic e TMOS POWER FET 52 -
OCR Scan

mosfet cross reference

Abstract: SMP40N06 -263, N MTB52N06V NDB6060L TO-263, N NDB408A NDB408A TO-263, N MTB52N06VL NDB6060 TO-263, N NDB410A NDB410A TO-263, N MTB52N06VL2 NDB6060 TO-263, N NDB5060
-
Original
IRF7206 IRF7303 SUP40N06-25L mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY IRFZ44 TO-263 SMP60N03-10L 2N7000 IRF7203 FDS9435A 2N7002 IRF7204 NDS8434A

mgb20n40cl

Abstract: MOTOROLA 136 DPAK 0.026 21 MTB52N06VL MTD1N50E 4.16 1 0.25 5 12 0.04 21 0.5 800 0.80 , MTD15N06V 15 0.028 55 500 500 0.55 0.18 7.5 12 0.025 MTB52N06V 60 0.045
Motorola
Original
mgb20n40cl MOTOROLA 136 DPAK MPIC2131FN MPIC2112DW MPIC2151D MTP75N06 MTD/MTP3055E MTD/MTP2955E MTP75N06HD MMSF4P01HDR1 SG265/D MC6530

A Listing and Cross Reference of Available Technical Literature from ON Semiconductor

Abstract: transistor book - 52 MTB52N06V 165 - 0.05 - 30 MTB30N06VL 90 0.04 - - 32 MTB36N06V 0.028 - - 42 MTB50N06V 125 - 0.025 - 52 MTB52N06VL 188
ON Semiconductor
Original
A Listing and Cross Reference of Available Technical Literature from ON Semiconductor transistor book SG385-D mtd1p50e IGBT Manual MMDF3N06VL SG385/D SC-70/SOT-323

mgb20n40cl

Abstract: MGB20N40 MTB52N06V (4) MTB52N06VL(2)(4) 3.0(3) 3.0(3) 52 3.0(3) ID (cont) Amps PD (Watts) Max
Motorola
Original
MGB20N35CL MGW12N120 MGB20N40 motorola automotive transistor coil ignition MTD1N60E1 MTSF3N03HD Motorola Master Selection Guide MGP20N14CL 220AB MGP20N35CL MGP20N40CL 247AE

mgb20n40cl

Abstract: 340G MTB52N06V (4) MTB52N06VL(2)(4) 3.0(3) 3.0(3) 52 3.0(3) ID (cont) Amps PD (Watts) Max
Motorola
Original
MGP20N60 340G TO-220AB footprint 221A-06 IGBTs Designed For Automotive Ignition Systems MTB75n05hd MGP5N60E MGW20N60D MGW30N60 MGY30N60D MGY40N60
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