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MRF237 Datasheet

Part Manufacturer Description PDF Type
MRF237 Advanced Semiconductor Silicon NPN RF Power Transistor Original
MRF237 Motorola The European Selection Data Book 1976 Scan
MRF237 Motorola European Master Selection Guide 1986 Scan
MRF237 N/A Shortform Transistor PDF Datasheet Scan
MRF237 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
MRF237 N/A Semiconductor Master Cross Reference Guide Scan
MRF237 N/A NPN Silicon RF Power Transistor Scan
MRF237 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan

MRF237

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: buses/Business radio \ 25 W 156-162 MHz, VHF MARINE RADIO FM TRANSISTORS c MRF237* 4.0 12 , 4-13.6 V, 160 MHz Marine radio/Pleasure craft/Fishing boats/2 meter "ham band" MRF237 MRF238 130-175 , 1.75 12.5 12.5 TO-39 2N6255 3.0 7.8 12.5 TO-39 2N5589 3.0 8.2 13.6 144B-06 MRF237* 4.0 12 12.5 -
OCR Scan
MRF231 MRF232 MRF233 MRF234 MRF212 MRF221 Transistor MRF237 transistor mrf212 mrf237 transistor MRF243 MRF230 MRF235
Abstract: MRF237 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The MRF237 is designed for large signal power amplifier applications operating to 225 MHz PACKAGE STYLE TO-39 MAXIMUM RATINGS IC 1.0 A VCBO 36 V VCEO 18 V PDISS 8.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 22 °C/W 1 = EMITTER 2 = BASE 3 = COLLECTOR TRANS1.SYM CHARACTERISTICS SYMBOL TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC Advanced Semiconductor
Original
Abstract: MRF237 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The MRF237 is designed for large signal power amplifier applications operating to 225 MHz PACKAGE STYLE TO-39 MAXIMUM RATINGS IC 1.0 A VCBO 36 V VCEO 18 V PDISS 8.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C JC 22 °C/W 1 = EMITTER 2 = BASE 3 = COLLECTOR TRANS1.SYM CHARACTERISTICS TC = 25 °C TEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCEO Advanced Semiconductor
Original
Abstract: TRANSISTORS c MRF237* 4.0 12 12.5 TO-39 MRF238 30 9.0 12.5 145A-07 \ *'Grounded emitter TO , " MRF237 MRF238 130-175 MHz, HIGH BAND/VHF FM TRANSISTORS f \ MRF604 1.0 10 12.5 TO-46 2N4427 1.0 , MRF237* 4.0 12 12.5 TO-39 2N6080 4.0 12 12.5 145A-07 2N5590 10 5.2 13.6 145A-07 MRF212 10 9.0 12.5 -
OCR Scan
2N6068 MAC10-2 2N6151 2N6073 2N6153 MRF215 2n5591 MRF244 MRF216 MAC92-1I MAC92A-1 2N6069 MAC220-2 MAC221-2
Abstract: 2SC2056 2SC2131 BLW90 BLW90 MRF237 MRF237 MRF237 ~~~~ · 85 Nth merSemi MitsubiElec MitsubiElec Advanced Semiconductor
Original
BF460 BF461 2N3374 2N3869 BLY34 BLY33 motorola diode 2SC24 2SC1567 2SC1567A BLY11 2N3498 2N3499
Abstract: MRF237 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The MRF237 is designed for large signal power amplifier applications operating to 225 MHz PACKAGE STYLE TO-39 MAXIMUM RATINGS IC 0.64A VCB 36 V VCE 18 V PDISS 8 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 21.9 °C/W CHARACTERISTICS SYMBOL 1 = EMITTER 2 = BASE 3 = COLLECTOR TRANS1.SYM TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO Advanced Semiconductor
Original
Abstract: 28.0 TO-39 MRF237* 175 0.25 4.0 12.0 12.5 TO-39 MRF207 220 0.15 1.0 8.2 12.5 TO-39 MRF227* 225 0.13 , 317D-01 MRF607 1.75 0.12 11.5 12.5 TO-205AD 2N6255 3.0 0.5 7.8 12.5 T0-205AD MRF237* 4.0 0.25 12 12.5 -
OCR Scan
MRF630 MRF262 MRF264 MRF4070 MRF247 MRF239 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA 2N6255 MOTOROLA MRF229 MRF553 2N3553 MRF525 2N3866 2N5160
Abstract: MRF237 4 W-175 MHz RF POWER TRANSISTOR NPN SILICON STYLE 5: PIN I. COLLECTOR 2. BASE 3. EMITTER , ° NOM N 2.54 TYP 0.100 TYP 0 90° NOM 90e NOM 9-40 MRF237 FIGURE 1 - 175 MHz TEST CIRCUIT -
OCR Scan
TL 413 transistor 2SA 640 motorola mrf237 T463 arco 457 15MH
Abstract: MOTOROL A SC -CDIODES/OPTO} 34 D rjb 3 b 7 2 S S 003A070 j 6367255 MOTOROLA SC (D IO D E S /O P T O ) 34C 38070 D SILICON RF TRANSISTOR DICE (continued) 7"> J ? - O 7 DIE NO. - NPN LINE SOURCE - RF605.418 2C6080 This die provides performance equal to or better than that of the following device types: 2N6080 MRF220 MRF237 Designed for 12.5 volts VHF largesignal power amplifier applications. · Specified 175 MHz, 12.5 Vdc Characteristics Poui = 4 -0 watts G -
OCR Scan
Motorola 2N6080 DIE npn RF Transistor motorola 418
Abstract: ), with a midband efficiency of 50 percent. The Motorola MRF237 was selected for the driver stage. This , mount and is cost effective. In this design, the MRF237 is inserted into a hole in the circuit board , forward bias (5­15 mA) to the MRF237, it will track low drive levels and help maintain stability in the Motorola
Original
AN955 choke vk200 VK200 inductor of high frequencies motorola MRF Motorola transistors MRF vk200 choke VK200 mrf237 AN955/D MRF1946A
Abstract: Motorola MRF237 was selected for the driver stage. This common emitter (TO-39) RF power transistor , mount and is cost effective. In this design, the MRF237 is inserted into a hole in the circuit board , forward bias (5­15 mA) to the MRF237, it will track low drive levels and help maintain stability in the Motorola
Original
MRF transistor High frequency MRF transistor AN778 250 watts amplifier schematic diagram mrf 237 MRF transistor 237
Abstract: Motorola MRF237 was selected for the driver stage. This common emitter (TO-39) RF power transistor , power. high-gain, is easy to mount and is cost effective. In this design, the MRF237 is inserted into , introducing a small amount of forward bias (5 ­ 15 mA) to the MRF237, it will track low drive levels and Motorola
Original
MRF1946 equivalent MRF high power transistor 1946A RF Application mrf vhf motorola rf Power Transistor
Abstract: 0.25 2.5 10.0 28.0 TO-39 MRF237* 175 0.25 4.0 12.0 12.5 TO-39 MRF207 220 0.15 1.0 8.2 12.5 TO , -205AD MRF237* 4.0 0.25 12 12.5 79-03 2N6080 4.0 0.25 12 12.5 145A-09 MRF260 5.0 0.5 10 12.5 T0-220AB MRF261 -
OCR Scan
MRF240 MOTOROLA TRANSISTOR MRF239 mrf239 MOTOROLA 145A-09 2N5591 MOTOROLA 2N3866 MOTOROLA s parameters 2N3866A MM4018 2N3948 2N5109 2N5943 2N5583
Abstract: 28.0 TO-39 MRF237* 175 0.25 4.0 12.0 12.5 TO-39 MRF207 220 0.15 1.0 8.2 12.5 TO-39 MRF227* 225 0.13 -
OCR Scan
MRF515 MRF557 Transistor 2N3866 Motorola transistors MRF630 to-39 2N3553 motorola MRF313 MRF581 MRF629 MRF627 MRF628
Abstract: Copyright 2001 TYPE PNP NPN NPN NPN Closest Packaged Equivalent SD1127/MRF237 MS1649/MRF630 Microsemi
Original
MCE545 MRF545 MRF544 MC1012 MC1343 MCE544 bfr96 equivalent bfr96 equivalent TRANSISTORS 2N5031 equivalent transistor equivalent bfr96 MMBR5031LT1/2N5031 MRF581/MRF5812R1/BFR96
Abstract: /MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 CEO 70V 70V 10V 18V IC MAX 400mA 400mA 20mA Microsemi
Original
MC3042 MC1333 MC1309 Bipolar Transistor y 200Mhz MRF237 / SD1127 waffle 5GHz oscillator 400MH 200MH MC1826
Abstract: SEMICONDUCTOR TECHNICAL DATA MOTOROLA MRF237 The RF Line 4 W - 175 MHz NPN SILIC O N RF POWER TRANSISTO R . . . designed fo r 12-5 V o lt large-signal p o w e r a m p lifie r a p p lica tio n s in c o m m u n ic a tio n e q u ip m e n t o p e ra tin g to 2 2 5 M H z . · S p e c ifie d 12.5 V o lt , 1 7 5 M H z C h a r a c t e r is t ic s - O u tp u t P o w e r = 4.0 W a tts M in im u m , % C A S E 79-05 TO-206AF (TO-39) MOTOROLA RF DEVICE DATA 2-506 MRF237 F I G U R E 1 - 1 -
OCR Scan
Abstract: 0.12 11.5 12.5 TO-205AD 2N6255 3.0 0.5 7.8 12.5 T0-205AD MRF237* 4.0 0.25 12 12.5 79-03 2N6080 4.0 -
OCR Scan
MRF238 MOTOROLA Motorola 2N6083 mrf2628 T0-206AB 2N6081 MRF2628 2N6082 2N6083 MRF1946/A
Abstract: MRF604 MRF553 MRF607 MRF220 MRF237 MRF260 Pin Input Power Watts (Max) Gpe (Min) Power Gain dB 9 175 -
OCR Scan
TP9380 TP9383 2n4427 MOTOROLA motorola 2N4427 motorola TP9380 fm band broadcast transmitter TP1940 317D-02/2
Abstract: 2001 TYPE PNP NPN NPN NPN Closest Packaged Equivalent SD1127/MRF237 MS1649/MRF630 MRF837 Microsemi
Original
PNP 2GHz LNA TRANSISTOR NPN 5GHz TRANSISTOR PNP 5GHz ms1649 transistor 5ghz pnp 5GHz PNP transistor 500MH SD1127/MRF237 B/200MH B/400MH B/500MH B/175MH
Abstract: ) 4bE D b3b72S4 4 MOTb MRF237 FIGURE 1 - 175 M H i TE STC IR C U IT SCHEMATIC T -
OCR Scan
transistor 7905 Y14SM
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