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Part : MPSW56RLRPG Supplier : ON Semiconductor Manufacturer : Avnet Stock : 22,000 Best Price : €0.0879 Price Each : €0.2049
Part : MPSW56RLRAG Supplier : ON Semiconductor Manufacturer : Allied Electronics & Automation Stock : - Best Price : $0.1030 Price Each : $0.1450
Part : MPSW56 Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 11,133 Best Price : $0.16 Price Each : $0.16
Part : MPSW56RLRAG Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 311,397 Best Price : $0.13 Price Each : $0.13
Part : MPSW56RLRP Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 292,000 Best Price : $0.11 Price Each : $0.11
Part : MPSW56RLRPG Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 179,499 Best Price : $0.13 Price Each : $0.13
Part : MPSW56 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 1,660 Best Price : $0.09 Price Each : $0.45
Part : MPSW56RLRAG Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 83 Best Price : $0.9932 Price Each : $0.9932
Part : MPSW56RLRAG Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 500 Best Price : $0.10 Price Each : $0.16
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MPSW56 Datasheet

Part Manufacturer Description PDF Type
MPSW56 Fairchild Semiconductor PNP General Purpose Amplifier Original
MPSW56 Fairchild Semiconductor PNP General Purpose Amplifier Original
MPSW56 On Semiconductor One Watt Amplifier Transistors(PNP Silicon) Original
MPSW56 Motorola European Master Selection Guide 1986 Scan
MPSW56 N/A Cross Reference Datasheet Scan
MPSW56 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
MPSW56 N/A Shortform Data and Cross References (Misc Datasheets) Scan
MPSW56 National Semiconductor PNP General Purpose Amplifier Scan
MPSW56RLRA On Semiconductor One Watt Amplifier Transistor PNP Original
MPSW56RLRAG On Semiconductor One Watt Amplifier Transistors; Package: TO-92 (TO-226) 7.87mm Body Height 1Watt; No of Pins: 3; Container: Tape and Reel; Qty per Container: 2000 Original
MPSW56RLRP On Semiconductor One Watt Amplifier Transistor PNP Original
MPSW56RLRPG On Semiconductor One Watt Amplifier Transistors; Package: TO-92 (TO-226) 7.87mm Body Height 1Watt; No of Pins: 3; Container: Tape and Ammunition Box; Qty per Container: 2000 Original

MPSW56

Catalog Datasheet MFG & Type PDF Document Tags

MPSW55

Abstract: MPSW56 ON Semiconductort MPSW55 MPSW56 One Watt Amplifier Transistors PNP Silicon w These , contact your local ON Semiconductor sales office or representative. MPSW56 is a Preferred Device MAXIMUM RATINGS Symbol MPSW55 MPSW56 Unit Collector -Emitter Voltage Rating VCEO -60 , ) MPSW55 MPSW56 Emitter -Base Breakdown Voltage (IE = -100 mAdc, IC = 0) V(BR)CEO V(BR)EBO Collector Cutoff Current (VCE = -40 Vdc, IB = 0) (VCE = -60 Vdc, IB = 0) MPSW55 MPSW56 Collector
ON Semiconductor
Original
MPSW55/D

MPSW55

Abstract: MPSW55G MPSW55, MPSW56 One Watt Amplifier Transistors PNP Silicon http://onsemi.com Features · , Unit Collector -Emitter Voltage MPSW55 MPSW56 VCEO -60 -80 Collector -Base Voltage MPSW55 MPSW56 VCBO -60 -80 Vdc VEBO -4.0 Vdc Collector Current - Continuous IC , ) 2000/Tape & Reel TO-92 2000/Ammo Pack TO-92 (Pb-Free) 2000/Ammo Pack MPSW56RLRP MPSW56RLRPG *For additional information on our Pb-Free strategy and soldering details, please download the
ON Semiconductor
Original
MPSW55G
Abstract: /Ammo Pack TOâ'92 (Pbâ'Free) 2000/Ammo Pack MPSW56RLRP MPSW56RLRPG *For additional , MPSW55, MPSW56 One Watt Amplifier Transistors PNP Silicon http://onsemi.com Features â , Unit Collector â'Emitter Voltage MPSW55 MPSW56 VCEO â'60 â'80 Collector â'Base Voltage MPSW55 MPSW56 VCBO â'60 â'80 Vdc VEBO â'4.0 Vdc Collector Current â , , BRD8011/D. Publication Order Number: MPSW55/D MPSW55, MPSW56 ELECTRICAL CHARACTERISTICS (TA = 25Â ON Semiconductor
Original

MPSW55

Abstract: MPSW56 8.0 2.5 20 ­55 to +150 MPSW56 ­80 ­80 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C MPSW55 MPSW56 MPSW56 is a Preferred Device 1 2 3 CASE 29­10, STYLE 1 TO­92 (TO­226AE) THERMAL , . Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. MPSW55 MPSW56 ICBO MPSW55 MPSW56 IEBO - - - ­0.1 ­0.1 ­0.1 µAdc V(BR)CEO MPSW55 MPSW56 V(BR)EBO ICES - - ­0.5 ­0.5 µAdc ­60 ­80 ­4.0 - - - Vdc µAdc , Order Number: MPSW55/D MPSW55 MPSW56 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted
ON Semiconductor
Original
Abstract: Transistors MPSW55 MPSW56* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW55 MPSW56 Collector â'" Emitter , Voltage(1) (IC = â'"1.0 mAdc, IB = 0) V(BR)CEO MPSW55 MPSW56 Emitter â'" Base Breakdown Voltage , â'"60 Vdc, IB = 0) MPSW55 MPSW56 Collector Cutoff Current (VCB = â'"40 Vdc, IE = 0) (VCB = â'"60 Vdc, IE = 0) MPSW55 MPSW56 µAdc ICBO IEBO Vdc µAdc ICES Emitter Motorola
Original
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW55 MPSW56* PNP , Symbol E m itter-B ase Voltage MPSW56 Unit -6 0 -8 0 Vdc VCBO C ollector-B ase , mAdc, I b = 0) Vdc v (BR)CEO MPSW55 MPSW56 E m itter-Base Breakdown Voltage (IE = -1 0 0 , , lg = 0) MPSW55 MPSW56 Collector Cutoff Current (Vc b = -4 0 Vdc, lE = 0) (V c b = -6 0 Vdc, I e = 0) MPSW55 MPSW56 ^4.0 â'" â'" v (BR)EBO - -0 .5 -0 .5 |iAdc â -
OCR Scan
QCH3477

MPSW56

Abstract: MPSW55 Transistors MPSW55 MPSW56* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW55 MPSW56 Collector ­ Emitter Voltage , Collector ­ Emitter Breakdown Voltage(1) (IC = ­1.0 mAdc, IB = 0) V(BR)CEO MPSW55 MPSW56 Emitter ­ , Vdc, IB = 0) (VCE = ­60 Vdc, IB = 0) MPSW55 MPSW56 Collector Cutoff Current (VCB = ­40 Vdc, IE = 0) (VCB = ­60 Vdc, IE = 0) MPSW55 MPSW56 µAdc ICBO IEBO Vdc µAdc ICES
Motorola
Original
Abstract: -60 -60 -4.0 -500 1.0 8.0 2.5 20 - 55 to +150 MPSW56 -80 -80 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C MPSW55 MPSW56 MPSW56 is a Preferred Device 1 2 3 CASE 29-10, STYLE 1 TO-92 (TO , Vdc, IC = 0) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. MPSW55 MPSW56 ICBO MPSW55 MPSW56 IEBO - - - -0.1 -0.1 -0.1 µAdc V(BR)CEO MPSW55 MPSW56 V(BR)EBO ICES - - -0.5 -0.5 µAdc -60 -80 , Rev. 2 Publication Order Number: MPSW55/D MPSW55 MPSW56 ELECTRICAL CHARACTERISTICS (TA = 25 ON Semiconductor
Original
Abstract: 8.0 2.5 20 ­55 to +150 MPSW56 ­80 ­80 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C MPSW55 MPSW56 MPSW56 is a Preferred Device 1 2 3 CASE 29­10, STYLE 1 TO­92 (TO­226AE) THERMAL , . Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. MPSW55 MPSW56 ICBO MPSW55 MPSW56 IEBO - - - ­0.1 ­0.1 ­0.1 µAdc V(BR)CEO MPSW55 MPSW56 V(BR)EBO ICES - - ­0.5 ­0.5 µAdc ­60 ­80 ­4.0 - - - Vdc µAdc , Publication Order Number: MPSW55/D MPSW55 MPSW56 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise ON Semiconductor
Original
Abstract: MPSW55 -6 0 -6 0 -4 .0 - 500 1.0 8.0 2.5 20 - 55 to +150 MPSW56 -8 0 -8 0 Unit Vdc Vdc Vdc m Adc W att m , - 15 MHz pF h FE 100 50 v CE(sat) v BE(on) - - 05 - 1 .2 Vdc Vdc - MPSW55 MPSW56 lCBO MPSW55 MPSW56 'e b o - _ - I Symbol Min M ax [ Unit v {BR)CEO MPSW55 MPSW56 v !BR)EBO , SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-377 MPSW55, MPSW56 FIGURE 1 D C C U R R EN T G AIN lc. C , SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-378 MPSW55, MPSW56 FIGURE 6 C U R R EN T G AIN · B A N D W ID -
OCR Scan

MPSW56

Abstract: MPSW56 MPSW56 C TO-226 B E PNP General Purpose Amplifier This device is designed , Units MPSW56 1.0 8.0 50 W mW/°C °C/W 125 °C/W Thermal Resistance, Junction to , cm . 2 2000 Fairchild Semiconductor Corporation MPSW56, Rev A (continued) Electrical , °C 0.1 - 40 ºC 125 ºC 0.01 10 100 I C - COLLECTOR CURRENT (mA) P 1000 MPSW56 , 100 MPSW56 PNP General Purpose Amplifier (continued) Typical Characteristics
Fairchild Semiconductor
Original

MPSW55

Abstract: MPSW56 ON Semiconductort MPSW55 MPSW56* One Watt Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSW55 MPSW56 Unit , , IB = 0) V(BR)CEO MPSW55 MPSW56 Emitter­Base Breakdown Voltage (IE = ­100 mAdc, IC = 0) V , MPSW56 Collector Cutoff Current (VCB = ­40 Vdc, IE = 0) (VCB = ­60 Vdc, IE = 0) MPSW55 MPSW56 , Industries, LLC, 2001 March, 2001 ­ Rev. 1 1 Publication Order Number: MPSW55/D MPSW55 MPSW56
ON Semiconductor
Original

mpsw56 transistor

Abstract: PR79 MPSW56 MPSW56 C TO-226 B E PNP General Purpose Amplifier This device is designed , Units MPSW56 1.0 8.0 50 W mW/°C °C/W 125 °C/W Thermal Resistance, Junction to , cm . 2 2000 Fairchild Semiconductor Corporation MPSW56, Rev A (continued) Electrical , °C 0.1 - 40 ºC 125 ºC 0.01 10 100 I C - COLLECTOR CURRENT (mA) P 1000 MPSW56 , 100 MPSW56 PNP General Purpose Amplifier (continued) Typical Characteristics
Fairchild Semiconductor
Original
mpsw56 transistor PR79 s773 CBVK741B019 F63TNR PN2222N
Abstract: MPSA56/MPSW56/MMBTA56 £ 5 | National m im Semiconductor MPSA56 MPSW56 MMBTA56 (C N ^ c / iJ if M B. ir È TL/G/10100-1 ! 7^7 TO-236 (SOT- 23) 10-92 c TO- 226AE Tl/G/10100-5 8c TL/G/10100-4 PNP General Purpose Amplifier Electrical Characteristics Symbol OFF CHARACTERISTICS v (BR)CEO = 25°c unless otherwise noted Parameter Min Max Units Collector-Emitter Breakdown Voltage, (Note 1) (lc = 1.0 mAdc, lB = 0) 80 Vdc Vdc 0.1 ixAdc v (BR)EBO -
OCR Scan
MPSA56/MPSW56/MMBTA56

mpsw56 transistor

Abstract: ic-250mA MPSW56 MPSW56 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM: 1 W (Tamb=25) 2. BASE Collector current ICM: -500 mA Collector-base voltage -80 V V(BR)CBO: Operating and storage junction temperature range 3. COLLECTOR 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA, IE
WEJ Electronic
Original
ic-250mA
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors PNP Silicon COLLECTOR MPSW55 MPSW56* 3 `Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating C o llecto r , -6 0 -6 0 MPSW56 -8 0 -8 0 Unit Vdc Vdc Vdc mAdc Watt m W /cC Watts m W /"C ·>C - 4 .0 -5 , value. Motorola Small-Signal Transistors, FETs and Diodes Device Data 2 -7 0 7 MPSW55 MPSW56 , Diodes Device Data MPSWSS MPSW56 0 VB. TEMPERATURE COEFFICIENT (mV/°C) IC. COLLECTOR CURRENT (mA -
OCR Scan

MPSW

Abstract: j- T Stg Tq 25' C Symbol v CEO v CB O v EBO >C Pd MPSW55 60 - 60 MPSW56 -8 0 80 4.0 Unit V dc V dc V dc m Adc W a tt m w rc W a tts m W /°C MPSW55 MPSW56* CASE 29-05, STYLE 1 TO
-
OCR Scan
MPSW

ztx450 equivalent

Abstract: transistor equivalent ZTX651 MPSW51A MPSW55 MPSW56 MPSW60 MPSW92 MPSW93 TN2017 TN2102 TN2218A TN2219 TN2219A TN 2270 TN 3020 TN3053
-
OCR Scan
ztx450 equivalent transistor equivalent ZTX651 ztx650 equivalent MPS651 equivalent MPS751 equivalent ztx751 equivalent 2N6714 2N6715 2N6716 2N6717 2N6718 2N6719

MMBTA56

Abstract: MPSW56 NATL SEMICOND DISCRETE National Semiconductor MPSW56 HE D J bSD1130 0D37S71 3 I T'tt-ZI MMBTA56 TO-92 T0 - 226AE TUG/10100-S â o (A > in o> T> to â'¬ CJl o> § 01 a> TL/G/10100-1 TUQ/10100-4 PNP General Purpose Amplifier Electrical Characteristics ta = 25°c unless otherwise noted Symbol Parameter Mln Max Units OFF CHARACTERS ncs V(BR)CEO Collector-Emitter Breakdown Voltage, (Note 1) (lc = 1.0 mAdc, I b = 0) 80 Vdc V(BR)EBO Emitter-Base Breakdown Voltage (lE = 100
-
OCR Scan
SD1130

BDB04

Abstract: BDB01A 50 200 MPSW56 EBC P 80 0.5 100 60 80 â'" 50 1 0.5 250 10 50 250 MOTOROLA EUROPEAN MASTER SELECTION
-
OCR Scan
BDC01A BDC02A BDB01A BDB02A BDC01B BDC02B BDB04 BDB01B BDB028

2n2904 2n2905

Abstract: BC237 3 2 BASE 1 EMITTER MPSW55 MPSW56* *Motorola Preferred Device MAXIMUM RATINGS Rating , ­60 ­60 ­4.0 ­500 1.0 8.0 2.5 20 ­ 55 to +150 MPSW56 ­80 ­80 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW , ) Emitter Cutoff Current (VEB = ­3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSW55 MPSW56 ICBO MPSW55 MPSW56 IEBO - - - ­0.1 ­0.1 ­0.1 µAdc V(BR)CEO MPSW55 MPSW56 V(BR)EBO ICES - - ­0.5 ­0.5 µAdc ­60 , Diodes Device Data 2­707 MPSW55 MPSW56 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise
ON Semiconductor
Original
2n2904 2n2905 BC237 MM3001 MM3725 MM4001 MMAD1106 MMBF4856LT1 MMBF4860LT1

ELMWOOD SENSORS

Abstract: AN1308 the darlington pairs are the MPSW06 and MPSW56 respectively. Both of these devices are also rated at , 1000 µF + C3 470 µF R17 51 k Z1 1N5252B Q5 MPSW56 E1 INPUT 2.2 µF 4.7 k , 1N4148 C15 Q15 MJF15030 R35 750 R91 22 k Q9 2SA1306B Q5 MPSW56 15 R44 750 , Transistor 80 volt Motorola MPS8599 Q5 1 NPN Transistor 80 volt Motorola MPSW56 , MPS8599 Q5 1 NPN Transistor 80 volt Motorola MPSW56 Q6 1 NPN Transistor 80
Motorola
Original
AN1308 ELMWOOD SENSORS 500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics 1000 watts audio amplifier schematics elmwood sensors ltd AN1308/D

motorola AN1308

Abstract: 300 watts audio amplifier schematics MPSW56 respectively. Both of these devices are also rated at 80 volts. These devices are operated in a , 470 µF Z1 1N5252B Q5 MPSW56 3 R72 500 R93 100 C15 330P C91 22P 27.4 k Q1 MPS8099 R1 221 R4 221 Q4 , C15 Q5 MPSW56 Q7 2SA1306B Q9 2SA1306B R91 22 k R5 2.21 k R95 300 R9 511 R11 22.1 R13 22.1 ­81V 15 Q15 , Motorola MPS8099 MPS8599 MPSW56 MPSW06 2SA1306B 2SC3298B MPS750 MPS650 MJF15030 2SC3281 MJF15031 2SA1302 , Motorola Motorola Motorola Motorola Motorola Motorola MPS8099 MPS8599 MPSW56 MPSW06 2SA1306B 2SC3298B
Motorola
Original
motorola AN1308 300 watts audio amplifier schematics power transistor audio amplifier 500 watts circuit diagram t1z12 Aham Tor Inc high fidelity amplifier
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