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Part : MPS3646 Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : MPS3646 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 610 Best Price : $0.09 Price Each : $0.30
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MPS3646 Datasheet

Part Manufacturer Description PDF Type
MPS3646 Motorola Switching Trasnistor(NPN Silicon) Original
MPS3646 Motorola SWITCHING TRANSISTOR Original
MPS3646 On Semiconductor Switching Transistor Original
MPS3646 On Semiconductor Switching Transistor Original
MPS3646 ON Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR SW NPN 15V TO-92 Original
MPS3646 Continental Device India Semiconductor Device Data Book 1996 Scan
MPS3646 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
MPS3646 Motorola Motorola Semiconductor Datasheet Library Scan
MPS3646 Motorola The European Selection Data Book 1976 Scan
MPS3646 Motorola Semiconductor Data Library Volume 3 1974 Scan
MPS3646 Motorola Switching Transistor NPN Silicon Scan
MPS3646 N/A Shortform Transistor PDF Datasheet Scan
MPS3646 N/A Shortform Transistor PDF Datasheet Scan
MPS3646 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
MPS3646 N/A Semiconductor Master Cross Reference Guide Scan
MPS3646 N/A Shortform Transistor Datasheet Guide Scan
MPS3646 N/A Vintage Transistor Datasheets Scan
MPS3646 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
MPS3646 National Semiconductor Shortform National Semiconductor Datasheet Scan
MPS3646 National Semiconductor NPN SWitching Transistors Scan
Showing first 20 results.

MPS3646

Catalog Datasheet MFG & Type PDF Document Tags

MPS-3646

Abstract: ON Semiconductort Switching Transistor MPS3646 NPN Silicon w ON Semiconductor , March, 2006 â' Rev. 3 1 Publication Order Number: MPS3646/D MPS3646 ELECTRICAL , 2 ts Vout MPS3646 CURRENT GAIN CHARACTERISTICS 100 MPS3646 VCE = 1 V h FE, DC , ) 1.0 MPS3646 TJ = 25°C 0.8 IC = 10 mA 50 mA 200 mA 100 mA 0.6 0.4 0.2 0 , ://onsemi.com 3 200 MPS3646 DYNAMIC CHARACTERISTICS 200 200 VCC = 10 V TJ = 25°C 100 70
ON Semiconductor
Original
MPS-3646 226AA MPS3646/D

mps3646

Abstract: mps3646 equivalent MOTOROLA Order this document by MPS3646/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3646 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 , . Motorola Small­Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPS3646 , Transistors, FETs and Diodes Device Data MPS3646 CURRENT GAIN CHARACTERISTICS 100 MPS3646 VCE = 1 V , MPS3646 VCE = 1 V h FE, DC CURRENT GAIN TJ = 125°C 25°C 100 ­15°C 70 ­ 55°C 50
Motorola
Original
mps3646 equivalent TRANSISTOR 023

mps3646 equivalent

Abstract: transistor N 343 AD ON Semiconductort Switching Transistor MPS3646 NPN Silicon ON Semiconductor Preferred , . 1 1 Publication Order Number: MPS3646/D MPS3646 ELECTRICAL CHARACTERISTICS (TA = 25 , RC , 70 100 200 200 MPS3646 VCE = 1 V h FE, DC CURRENT GAIN TJ = 125°C 25°C 100
ON Semiconductor
Original
transistor N 343 AD ad 303 transistor

MPS3646

Abstract: MPS3646 ON Semiconductor Preferred Device 1 2 3 CASE 29­11, STYLE 1 TO­92 (TO­226AA) mW mW/°C Watts , Publication Order Number: MPS3646/D MPS3646 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , Time Test Circuit http://onsemi.com 802 MPS3646 CURRENT GAIN CHARACTERISTICS 100 70 h FE, DC CURRENT GAIN 50 TJ = 125°C 25°C -15°C -55°C MPS3646 VCE = 1 V 30 20 10 1.0 2.0 3.0 5.0 , 0.2 0 MPS3646 TJ = 25°C IC = 10 mA 50 mA 100 mA 200 mA 0.1 0.2 0.3 0.5 0.7 1.0
ON Semiconductor
Original

MPS3646

Abstract: TO226AA ON Semiconductort Switching Transistor MPS3646 NPN Silicon ON Semiconductor Preferred , October, 2001 - Rev. 2 1 Publication Order Number: MPS3646/D MPS3646 ELECTRICAL , 50 Figure 2. Charge Storage Time Test Circuit http://onsemi.com 2 ts Vout MPS3646 CURRENT GAIN CHARACTERISTICS 100 MPS3646 VCE = 1 V h FE, DC CURRENT GAIN 70 TJ = 125°C 50 , CHARACTERISTICS VCE, MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 MPS3646 TJ = 25°C 0.8 IC = 10
ON Semiconductor
Original
TO226AA

MPS3646

Abstract: MPS3646 ON Semiconductor Preferred Device 1 2 3 CASE 29-11, STYLE 1 TO-92 (TO-226AA) mW mW/°C Watts , October, 2001 - Rev. 2 Publication Order Number: MPS3646/D MPS3646 ELECTRICAL CHARACTERISTICS (TA , Figure 2. Charge Storage Time Test Circuit http://onsemi.com 1205 MPS3646 CURRENT GAIN CHARACTERISTICS 100 70 h FE, DC CURRENT GAIN 50 TJ = 125°C 25°C -15°C - 55°C MPS3646 VCE = 1 V 30 20 10 1.0 , VOLTAGE (VOLTS) 0.8 0.6 0.4 0.2 0 MPS3646 TJ = 25°C IC = 10 mA 50 mA 100 mA 200 mA 0.1 0.2 0.3
ON Semiconductor
Original

MPS3646

Abstract: ON Semiconductort Switching Transistor MPS3646 NPN Silicon w ON Semiconductor , Components Industries, LLC, 2006 March, 2006 - Rev. 3 1 Publication Order Number: MPS3646/D MPS3646 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic , MPS3646 CURRENT GAIN CHARACTERISTICS 100 MPS3646 VCE = 1 V h FE, DC CURRENT GAIN 70 TJ = 125 , CHARACTERISTICS VCE, MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 MPS3646 TJ = 25°C 0.8 IC = 10
ON Semiconductor
Original

mps3646

Abstract: mps3646 equivalent ON Semiconductort Switching Transistor MPS3646 NPN Silicon ON Semiconductor Preferred , Order Number: MPS3646/D MPS3646 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , ://onsemi.com 2 ts Vout MPS3646 CURRENT GAIN CHARACTERISTICS 100 MPS3646 VCE = 1 V h FE, DC , MPS3646 TJ = 25°C 0.8 IC = 10 mA 50 mA 200 mA 100 mA 0.6 0.4 0.2 0 0.2 0.1 , , COLLECTOR CURRENT (mA) Figure 6. Temperature Coefficients http://onsemi.com 3 200 MPS3646
ON Semiconductor
Original

MPS-3646

Abstract: MPS3646 MOTOROLA Order this document by MPS3646/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3646 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 , . Motorola Small­Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPS3646 , % Motorola Small­Signal Transistors, FETs and Diodes Device Data MPS3646 CURRENT GAIN CHARACTERISTICS 100 MPS3646 VCE = 1 V h FE, DC CURRENT GAIN 70 TJ = 125°C 50 25°C ­15°C 30 ­ 55
Motorola
Original
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor NPN Silicon MPS3646 Motorola , Transistors, FETs and Diodes Device Data 2-5 5 5 MPS3646 ELEC TR IC A L C HAR AC TER ISTIC S (TA = 25 , , FETs and Diodes Device Data MPS3646 CURRENT GAIN CHARACTERISTICS IC, COLLECTOR CURRENT (mA , , FETs and Diodes Device Data 2 -5 5 7 MPS3646 ON" CONDITION CHARACTERISTICS Figure 5. C , Transistors, FETs and Diodes Device Data MPS3646 DYNAMIC CHARACTERISTICS td, D E LA Y T IM E (ns) 1.0 -
OCR Scan

mps3646

Abstract: IC-100 MPS3646 (SILICON) NPN SILICON ANNULAR SWITCHING TRANSISTOR . designed for use in fast switching applications. Collector-Emitter Breakdown Voltage â'" BVCES = 40 Volts (Mini @ lc = 100 (JAdc DC , 2.410 2.670 0.095 0.105 S 2.030 2.670 0.080 0.105 CASE 2942 TO-92 890 MPS3646 (continued , Z,n - 50 fl 891 MPS3646 (continued) FIGURE 3 - OC CURRENT GAIN -w-4- , 0.3 0.5 1.0 2.0 3.0 5.0 7 0 10 20 30 50 70 100 200 300 >c, COLLECTOR CURRENT ImA) 892 MPS3646
-
OCR Scan
IC-100
Abstract: , FETs and Diodes Device Data MPS3646 ELECTRICAL CHARACTERISTICS (TA = 25°C unle s s otherw ise , Motorola Small-Signal Transistors, FETs and Diodes Device Data MPS3646 CURRENT GAIN CHARACTERISTICS , , FETs and Diodes Device Data MPS3646 "ON" CONDITION CHARACTERISTICS !ß, BASE CURRENT (mA , Small-Signal Transistors, FETs and Diodes Device Data MPS3646 DYNAMIC CHARACTERISTICS td, DELAY TIME -
OCR Scan
PS3646 GCH332

2N4264

Abstract: MPS3646 Thermal Resistance, Junction to Case R&JC 83.3 'CAN MPS3646* CASE 29-04, STYLE 1 TO-92 (TO-226AA) 3 , %. 2-294 Motorola Small-Signal Transistors, FETs and Diodes Device Data MPS3646 FIGURE 1 - SWITCHING
-
OCR Scan
2N4264

2N4264

Abstract: 12 - 5 5 to +150 Unit Vdc Vdc Vdc Vdc m Adc mW m W '-C W atts mW'°C °C MPS3646* CASE 29-04, STYLE , DIODES 2-265 MPS3646 F I G U R E 1 - S W I T C H I N G T I M E TE ST C I R C U I T '3 0 V M O V
-
OCR Scan

S4015

Abstract: MPS3646* CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Th erm a l R , Diodes Device Data MPS3646 F I G U R E 1 - S W IT C H IN G T IM E T E S T C I R C U I T T o S a m
-
OCR Scan
S4015 2N42S4
Abstract: MPS3646 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)300m Absolute Max. Power Diss. (W)625mâ'™ Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)20 h(FE) Max. Current gain.120 @I(C) (A) (Test Condition)30m @V(CE) (V) (Test Condition).40 f(T) Min. (Hz) Transition Freq350M @I(C) (A) (Test Condition)30m @V(CE) (V) (Test Condition)10 Power Gain Min. (dB) @I(C) (A American Microsemiconductor
Original

2N3646

Abstract: MPS3013 M O T O R O L A SC -CDIODES/OPTOJ 34 DE | b 3 b ? a S 5 0D37Tfl(a [ 6367255 MOTOROLA SC (DIODES/OPTO) 34C 37986 SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) T " %5~- t y DIE NO. - NPN LINE SOURCE - DMB104 2C3511 » This die provides performance similar to that of the following device types: 2N2501* 2N3009 2N3013 2N3014 2N3211 2N3510* 2N3S11 2N3646 2N3647 2N3648 2N4264 2N4265 2N5772 MMT3014 MPS2501 MPS3013 MPS3646 MPS5128 MPS5129 Designed for logic
-
OCR Scan
SILICON SMALL-SIGNAL DICE SILICON DICE motorola 0D37T MIL-S-19500

2N4275

Abstract: 2N3640 30 0.20 30 350 5.0 200 0.5 to-106 26 MPS3646 15 18 10 30/120 30 0.20 30 350 5.0 625 1.0 to-92 27
-
OCR Scan
2N3639 2N5134 2N4274 2N5224 2N4258A 2N4208 2N4275 2N3640 2N3646 fairchild 2N4209 fairchild to-106 2NS228
Abstract: MPS3646 18 18 25 25 25 25 25 25 25 30 40 15 15 25 25 25 25 25 25 25 12 15 5 5 5 5 5 5 5 5 5 2 5 -
OCR Scan
CSD261G CSD261R CSD261Y MPS2222 PS2222A MPS2369

MPSL08

Abstract: MPS3640 2N5769 10 0.25 @ 10 0.20 @ 10 0.18 @ 30 0.40 0.20 0.20 0.20 @ @ @ @ EN3009 EN3013 MPS3646
-
OCR Scan
MPSL08 MPS3640 TO-106 en744 MPS834 EN3011 EN744 2N5140 EN2894A

BC237

Abstract: transistor BC107 specifications EMITTER MPS3646 Motorola Preferred Device 1 2 3 MAXIMUM RATINGS Rating Collector ­ Emitter , MPS3646 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol , Small­Signal Transistors, FETs and Diodes Device Data MPS3646 CURRENT GAIN CHARACTERISTICS 100 70 h FE, DC CURRENT GAIN 50 TJ = 125°C 25°C ­15°C ­ 55°C 20 MPS3646 VCE = 1 V 30 10 1.0 2.0 3.0 , , DC CURRENT GAIN 100 70 50 25°C ­15°C ­ 55°C MPS3646 VCE = 1 V 30 20 1.0 2.0 3.0 5.0
ON Semiconductor
Original
BC237 transistor BC107 specifications mps4123 opposite transistor equivalent 2n5551 transistor equivalent book 2N5401 2n3819 equivalent transistor MM3001 MM3725 MM4001 MMAD1106 MMBF4856LT1 MMBF4860LT1
Abstract: 2N6428 2N6428A 2PC945* 2PC1815* 2PC1815L' JC501 * MPS3646 MPS3704 MPS3705 MPS3706 MPS3904 -
OCR Scan
3S3T31 2N1613 2N1711 2N1893 2N2218 2N2219

2N2222A TO-18

Abstract: 2N2222 to92 8 1 2PC1815L* TO-92 60 150 140 â'" 1.0 8 1 JC501 * TO-92 45 90 â'" â'" 1.0 150 1 MPS3646 TO-92 15
-
OCR Scan
2N2219A 2N2221A 2N2222 2N2222A 2N2297 2N2368 2N2222A TO-18 2N2222 to92 2N3904 TO-92 type 2N2222A TO-92 2N2222 TO-92 S3131
Showing first 20 results.