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ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
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TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

MP 41 transistor

Catalog Datasheet MFG & Type PDF Document Tags

ge-2 transistor

Abstract: transistor gt 322 8128051 Zierleiste für Skala Ziergitter für Laut sprecher 8050127 Diode 7 GE 2 AS Transistor GT 322 A Transistor MP 37 Transistor MP 41 Transistor ? 213 B Diode D 103 Kühlkörper für Transistor P 213 B Platte für
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smd code marking NEC

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 15000 39 53 139 336 304 88 20000 12000 600 1550 600 4V 27 41 , 26 36 56 40 83/105 17 4.5V 18.2 25.5 23.9 41 36.4 15 150 , Taping Type MP-3ZK MP-25ZK MP-25 Fin Cut MP-25ZK SOP-8 TSSOP-8 NEC Electronics , NP110N04PUG 7.8 14 180 12 15 21 27 30 41 44 53 38 64 -E1, -E2 -E1, -E2 -E1, -E2 MP-3ZK TO-263 3-pin MP-25ZP TO-263 7-pin MP-3 MP-3ZK 2SK4069
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smd code marking NEC TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w marking code E1 SMD 5pin SMD 8PIN IC MARKING CODE 251 G18756EU3V0SG00

2SK1794

Abstract: 2SK1500 Build-up Rate dV/dt When Power Is Turned Off Incorrect operation of the internal Bip transistor in the FET , power is turned off. Tr Gate RB Base resistor < 2 > The internal Bip transistor Tr is , concentrates because the internal Bip transistor is switched on locally, and the circuit is damaged. Internal Bip transistor Source (2) Enlarged cross-sectional diagram of the MOSFET Cell Cell Gate electrode N P Source aluminum Gate dielectric N P RB Internal Bip transistor N N
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2SK1794 2SK1500 snubber circuit for mosfet flyback snubber nec 5p4m upd1099 D13686EJ1V0AN00 EJ1V0AN00
Abstract: DATA SHEET MOS FIELD EFFECT TRANSISTOR _ 2SK3353 SWITCHING N-CHANNEL POWER MOS , Effect Transistor PART NUMBER PACKAGE 2SK3353 TO -220AB 2SK3353-S TO-262 2SK3353 , resistance: ☠☠☠RüS(on)i = 9.5 m£2 MAX. (V gs = 10 V, Id = 41 A) RDS(on)2 = 14 m£i MAX. (V gs = 4 V, Id = 41 A) â'¢ Low Ciss: Ciss = 4650 pF TYP. â'¢ Built-in gate protection diode , , Id = 41 A RDS(on)1 RDS(on)2 V gs = 4V, Id = 41 A VGS(ofl) Gate to Source C ut-off -
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2SK3353-Z TQ-220SM D14130EJ1V0DS00 MP-25 MP-25Z
Abstract: HA12089NT/MP -Sound Signal Processing IC for Automatic Telephone Answering , when FF/REW (VOX Part) â'¢ VO X Amp COMP Amp; (Detection Circuit) DP-42SA HA12089MP MP-44 168 HA12089NT/MP Absolute Maximum Ratings (Ta = 2S°C) Item Supply Voltage * Power Dissipation , (HA12089MP) l 69 HA12089NT/MP Pin Description (HA12089NT) Pin No. r 2 3 4 5 6 7 8 9 10 , 36 37 38 39 40 41 42 Symbol REC-OUT1 GND ICM OGM RIP-FIL MIC-IN LINE-IN ALC-DC-CUT -
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HA12089NT/MP HA12089 MP-44

MP-25

Abstract: NP82N055CLE PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP82N055CLE, NP82N055DLE , product is N-channel MOS Field Effect Transistor TO-220AB TO-262 NP82N055ELE · Channel , . (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 m MAX. (VGS = 5 V, ID = 41 A) · Low Ciss : Ciss = 4750 pF (TYP , . UNIT RDS(on)1 VGS = 10 V, ID = 41 A 6.7 8.4 m RDS(on)2 VGS = 5 V, ID = 41 A 7.9 11 m RDS(on)3 VGS = 4.5 V, ID = 41 A 8.2 12 m VGS(off) VDS = 10 V, ID = 250
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2SK3353

Abstract: 2SK3353-S PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3353 SWITCHING N-CHANNEL , Effect Transistor PART NUMBER PACKAGE 2SK3353 TO-220AB 2SK3353-S TO-262 2SK3353 , resistance: RDS(on)1 = 10 m MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 15 m MAX. (VGS = 4 V, ID = 41 A) · Low , . UNIT RDS(on)1 VGS = 10 V, ID = 41 A 8.0 10 m RDS(on)2 VGS = 4 V, ID = 41 A 11 , | yfs | VDS = 10 V, ID = 41 A 20 40 Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V
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nec 41-A

Abstract: 2SK3353 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3353 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3353 is N-channel MOS Field Effect Transistor , (on)1 = 9.5 m MAX. (VGS = 10 V, ID = 41 A) 5 RDS(on)2 = 14 m MAX. (VGS = 4 V, ID = 41 A) 5 · , (on)1 VGS = 10 V, ID = 41 A 7.5 9.5 m RDS(on)2 VGS = 4 V, ID = 41 A 10.5 14 , | yfs | VDS = 10 V, ID = 41 A 30 50 Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V
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nec 41-A

transistor 5bw

Abstract: Part) â'¢ VOX Amp-COMP Amp; (Detection Circuit) 0 MP-44 H IT A C H I Hitachi America , 71 HA12089NT/MP Absolute Maximum Ratings (Ta = 25°C) Item Supply Voltage * Power , HA12089NT/MP Pin Description (HA12089NT) Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 , Level Adjustment GND (Power) External Power Transistor Drive External Power Transistor Drive Vcc
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transistor 5bw HA12089NT/MP------------------------S

nec 41-A

Abstract: MP-25 PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP82N06CLD,NP82N06DLD,NP82N06ELD , Effect Transistor designed for high current switching applications. ORDERING INFORMATION FEATURES , V, ID = 41 A) · Low Ciss : Ciss = 4830 pF (TYP.) TO-262 NP82N06ELD RDS(on)1 = 8.5 m (MAX.) (VGS = 10 V, ID = 41 A) TO-220AB NP82N06DLD · Super Low On-state Resistance PACKAGE TO , source of the transistor serves as a protector against ESD. When this device actually used, an
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transistor BD 512

Abstract: transistor kt 801 B Diode D 220 Diode D 211 Diode D 242 B Z-Diode D 814 B Transistor GT 328 B Transistor GT 313 A Transistor KT 315 A Transistor P 416 B Transistor MP 38 Transistor GT 404 B Transistor GT 402 B Transistor MP 40 A Transistor KT 315 G Transistor MP 42 A Transistor MP 42 B Transistor KT 801 B Transistor GT 906 A Transistor KT 611 G Transistor P 4 DB Transistor GT 313 B/G Bildröhre 23 LK 13 B Thermistor S T , : Seite 2. 9/73 Poe. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. 34. 35. 36. 37. 38. 39. 40. 41
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transistor BD 512 transistor kt 801 transistor kt junost 603 Diode KD 202 kt801b 12-VA III/18/379

d1409

Abstract: MP-25 DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CLE,NP82N055DLE,NP82N055ELE,NP82N055KLE , FEATURES TO-220AB NP82N055DLE applications. PACKAGE NP82N055CLE Transistor designed for high current switching TO-263 (MP-25ZJ) NP82N055KLE TO-263 (MP-25ZK) · Super low on-state resistance RDS(on)1 = 8.4 m MAX. (VGS = 10 V, ID = 41 A) (TO-220AB) RDS(on)2 = 11 m MAX. (VGS = 5.0 V, ID = 41 A) · Low Ciss : Ciss = 4400 pF TYP. · Built-in gate protection diode ABSOLUTE MAXIMUM
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d1409 MP-25ZJ MP-25ZK

82n055

Abstract: nec 82n055 . DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055ELE, NP82N055KLE NP82N055CLE, NP82N055DLE , -263 (MP-25ZK) typ. 1.5 g Note1, 2 NP82N055DLE-S12-AY TO-263 (MP-25ZJ) typ. 1.4 g Note1 Sn-Ag-Cu Pure Sn (Tin) TO-220 (MP-25) typ. 1.9 g Tube 50 p/tube Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g (TO-220) FEATURES · Channel
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82n055 nec 82n055 NP82N055ELE-E1-AY NP82N055ELE-E2-AY NP82N055KLE-E1-AY NP82N055KLE-E2-AY

MP-25

Abstract: NP82N055CLE PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CLE, NP82N055DLE, NP82N055ELE , applications. PACKAGE NP82N055CLE Transistor designed for high current switching TO-263 · , , ID = 41A) RDS(on)2 = 11 m MAX. (VGS = 5.0 V, ID = 41 A) 5 · Low Ciss : Ciss = 4400 pF TYP. · , On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 41 A 6.7 8.4 m RDS(on)2 VGS = 5.0 V, ID = 41 A 7.9 11 m RDS(on)3 VGS = 4.5 V, ID
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82n055

Abstract: nec 82n055 DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055ELE, NP82N055KLE NP82N055CLE, NP82N055DLE , -263 (MP-25ZK) typ. 1.5 g Note1, 2 NP82N055DLE-S12-AY TO-263 (MP-25ZJ) typ. 1.4 g Note1 Sn-Ag-Cu Pure Sn (Tin) TO-220 (MP-25) typ. 1.9 g Tube 50 p/tube Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g (TO-220) FEATURES · Channel
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NP82N055MLE NP82N055NLE MP transistor 82n055 MP 41 transistor np82n055 NP82N055CLE-S12-AZ NP82N055MLE-S18-AY NP82N055NLE-S18-AY MP-25K

MP-25

Abstract: NP82N055CHE PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CHE, NP82N055DHE, NP82N055EHE , applications. PACKAGE NP82N055CHE Transistor designed for high current switching TO-263 · , V, ID = 41 A) · Low Ciss : Ciss = 2800 pF TYP. · Built-in gate protection diode ABSOLUTE , Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 41 A Gate to Source Threshold , | VDS = 10 V, ID = 41 A 19 38 Drain Leakage Current IDSS VDS = 55 V, VGS = 0 V 10
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2SB562C

Abstract: /REW (VOX Part) · VOX Amp-COMP Amp; (Detection Circuit) MP-44 0 H ITA C H I Hitachi America, Ltd , HA12089NT/MP Absolute Maximum Ratings (Ta = 25°C ) Item Supply Voltage * Power Dissipation * Operating , , CA 94005-1819 · (415) 589-8300 HA12089NT/MP Pin Description (HA12089NT) Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 , Adjustment GND (Power) External Power Transistor Drive External Power Transistor Drive Vcc (Power) Power Amp
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2SB562C

NEC 10F triac

Abstract: 10F triac NEC diode 26 Selection Guide G10748EJDV0SG TO-251 (MP-3 Type) Transistor TO-251 (MP-3) VCEO , , [: Complementary pair, : Single high hFE, : Low VCE(sat) TO-126 (MP-5) Type Transistor TO-126 (MP , ), : Single high hFE Selection Guide G10748EJDV0SG 27 MP-10 Type Transistor VCEO (V) Up to 60 , : Darlington transistor, [: Complementary pair, O: Single high hFE, : Low VCE(sat) TO-220AB (MP-25) Type , : Darlington transistor, [: Complementary pair, *: Internal Zener diode between C and B, 28 TO-220AB (MP
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NEC 10F triac 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM 3S4M SCR thyristor battery charger 2p4m D-30177 G10748EJDV0SG00

82n055

Abstract: NP82N055MLE PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP82N055MLE,NP82N055NLE , PACKING NP82N055MLE-S18-AY Note PACKAGE Pure Sn (Tin) Tube 50 p/tube TO-220 (MP-25K) typ. 1.9 g NP82N055NLE-S18-AY Note Pure Sn (Tin) Tube 50 p/tube TO-262 (MP-25SK) typ. 1.8 g , resistance (TO-220) RDS(on)1 = 8.4 m MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 m MAX. (VGS = 5.0 V, ID = 41 A) RDS(on)3 = 12 m MAX. (VGS = 4.5 V, ID = 41 A) · Low Ciss : Ciss = 4400 pF TYP. ·
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41A28 d1848 MP-25SK

MP-25

Abstract: NP82N055CHE PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP82N055CHE, NP82N055DHE , product is N-channel MOS Field Effect Transistor TO-220AB TO-262 NP82N055EHE · Channel , . (VGS = 10 V, ID = 41 A) · Low Ciss : Ciss = 2800 pF TYP. · Built-in gate protection diode ABSOLUTE , = 41 A Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 250 µA 2.5 3 16 31 Forward Transfer Admittance | yfs | VDS = 10 V, ID = 41 A Drain Leakage Current
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