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V62/11601-01YE-T Texas Instruments HALF BRDG BASED MOSFET DRIVER visit Texas Instruments
UCC27211ADRM Texas Instruments IC HALF BRDG BASED MOSFET DRIVER, MOSFET Driver visit Texas Instruments
ISL6625ACRZ-T Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; DFN8; Temp Range: See Datasheet visit Intersil Buy
HIP6601BCBZ Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
HS0-4424RH-Q Intersil Corporation BUF OR INV BASED MOSFET DRIVER visit Intersil
ISL6596CBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy

MOSFET 1000v 30a

Catalog Datasheet MFG & Type PDF Document Tags

smps with uc3842 and tl431

Abstract: mc34063 step down with mosfet DDP6V8 / BZYxx Input rect. Bridge - 1000V / 35A; 600V/35A Input Rect. Bridge - ; 1200V, 30A (3 , VB408* Power Switch 1000V, 36A / 1000V, 72A - ISOTOP Mosfet 500V, 53A / 900V 26A - ISOTOP Mosfet , , E2Prom, PWM-Timer, etc. Fast Mosfet Max220 / TO247 / TO220/ ISOWATT218 8A, 2x300V Hyperfast Diode / Low , Current loop control Fast Mosfet Max247 /Max220 /TO247 / TO220/ ISOWATT218 New Mosfet Technology: less , ,inverting) 1.5A, Adj Output, SO8/DIP8 5A Linear Regulator / Controller for ext. Mosfet ESD Protection (5V
STMicroelectronics
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smps with uc3842 and tl431 mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a BF3510TV BHA/K3012TV 600CW AVS08 L6560/A

MOSFET 1000v 30a

Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES · · · · · MOSFET And Common Cathode Rectifier In One Package Isolated High Density Package , °C PART NUMBER OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 VDS 100V 200V 500V 1000V MOSFET RDS , Time MOSFET ELECTRICAL CHARACTERISTICS: OM9030SP1 (1000V) (TC = 25° unless otherwise noted
International Rectifier
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MOSFET 1000v 30a 10A, 100v fast recovery diode diode 1000V 10a OM9027 OM9028 OM9029 OM9030

transistor 12n60c

Abstract: 12N60c equivalent , SCH FRED h e Wo Rs!!! T IFIE RECT PRODUCT PART NUMBER MOSFET IXFR 180N07 IXFR 180N085 , 600V 800V 800V 800V 800V 900V 900V 1000V 1000V 1000V 1000V 180A 180A 75A 80A 165A 68A 105A 56A 71A 90A 105A 83A 48A 75A 13A 24A 30A 43A 48A 24A 37A 7.5A 13A 21A 28A 24A , SCHOTTKY DSSK 60-015AR RECTIFIERS DSP25-16AR DSI 45-16AR 200V 300V 600V 600V 600V 1000V 1200V 1200V 1200V 1200V 150V 2x34A 2x30A 9A 17A 30A 30A 15A 30A 30A 60A 2x30A 0.85V 0.91V
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IXLF19N250A transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a ISOPLUS247TM PLUS247TM- 180N10 PLUS247TM ISOPLUS220TM FBO16-08N
Abstract: V 200V 500V 1000V .0650 0.1Î2 0.4Î2 3Î2 30A 25A 12A 4A 1.1V 1.45V 1.45V 1.55V 3.1 , OM9027SP1 OM9029SP1 OM9Q28SP1 QM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 10 0 V T h r u 1000V. 4A To 3 0 A P o w e r M O S F E T A n d High S p e e d R ect ifi er In O n , High Density Package Fast Switching Low RDS(on) MOSFET High Current DESCRIPTION This series of , RATINGS @25°C MOSFET PART NUMBER OM9Û27SP1 OM9028SP1 OM9029SP1 OM9030SP1 vD S ^ D S (o n -
OCR Scan
OM9Q27SP1 100-C

MOSFET 1000v 30a

Abstract: OM6223SP2 PROFILE PLASTIC PACKAGE Four Uncommitted 100V To 1000V, Up To 30A N-Channel Power MOSFETs In One Package , MOSFET OM6226SP2 (1000V) (TC = 25° unless otherwise noted) ELECTRICAL CHARACTERISTICS: Per MOSFET , ) DESCRIPTION This series of Industrial products feature the latest advanced MOSFET and packaging technology , energy pulse circuits. MAXIMUM RATINGS (Per MOSFET) PART NUMBER OM6223SP2 OM6224SP2 OM6225SP2 OM6226SP2 VDS 100V 200V 500V 1000V SCHEMATIC 2 D 5 D 8 D RDS(on) .065 0.1 0.4 3
International Rectifier
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p-channel 250V 30A power mosfet

MOSFET 1000v 30a

Abstract: 1000V P-channel MOSFET PLASTIC PACKAGE Four Uncommitted 100V To 1000V, Up To 30A N-Channel Power MOSFETs In One Package , energy pulse circuits. MAXIMUM RATINGS (Per mosfet) PART NUMBER Vos RdS(oh) â o OM6223SP2 100 V .065Ã2 30A OM6224SP2 200V 0.1Q 25A OM6225SP2 500V 0.4Q 12A OM6226SP2 1000V 3Q 4A SCHEMATIC PIN , = 300(js, Duty Cycle < 2%. B ELECTRICAL CHARACTERISTICS: Per MOSFET OM6226SP2 (1000V) (Tc = 25Â , ) DESCRIPTION This series of Industrial products feature the latest advanced MOSFET and packaging technology
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OCR Scan
1000V P-channel MOSFET 6015-a ic AM 12A OM6223 OM6224 OM6225 OM6226

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF VDSS (V) 1000V 200V 0.040 0.300 0.200 22A 30A 0.075 14A 25A 0.047 , 30V 1000V 200V 100V 0.014 60V RF1S9630SM (Note) 200V, 6.5A, 0.800 RF1S4N100SM 1000V, 4.3A, 3.500 RF1S630SM 200V, 9A, 0.400 0A TO 10A S E M I C O N D U C TO R 3.500 , , P-Channel, 30V, Surface Mount MOSFET CURRENT RATING 1 = 1A, 10 = 10A, 25 = 25A, etc. PACKAGE DESIGNATION 1S: TO-262, TO-263 DEVICE TYPE F: Standard MOSFET L: Current Limited MOSFET RF1S50N06SM
Harris Semiconductor
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IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V RF1S70N06SM RF1S70N03SM RF1S60P03SM LC96586 RF1S45N06SM RF1S50N06LESM

1000V 25A Mosfet

Abstract: MOSFET 1000v 30a : Per MOSFET OM6222SP1 (1000V) (TC = 25° unless otherwise noted) OM6219SP1 - OM6222SP1 ABSOLUTE , POWER PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFETs With Low RDS(on) Characteristics , Available (up to 200V) DESCRIPTION This series of Industrial products feature the latest advanced MOSFET , , choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS (Per MOSFET) PART NUMBER OM6219SP1 OM6220SP1 OM6221SP1 OM6222SP1 VDS 100V 200V 500V 1000V SCHEMATIC DRAIN
International Rectifier
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1000V 25A Mosfet tf 115 250v 20 a POWER MOSFET Rise Time 1000V NS
Abstract: PROFILE PLASTIC PACKAGE Four Uncommitted 100V To 1000V, Up To 30A N-Channel Power MOSFETs In One Package , ELECTRICAL CHARACTERISTICS: Per MOSFET OM6226SP2 (1000V) (Tc = 25° unless otherwise noted) Characteristic , RoS(on) .065Q Id 30A OM6224SP2 200V 0.1Q 25A OM6225SP2 500V 0.4Q 12A OM6226SP2 1000V 3Q 4A SCHEMATIC 2D 1g o - 5D J 4 GOâ'" PIN CONNECTION 8D , Omnirel® ELECTRICAL CHARACTERISTICS: Per MOSFET OM6223SP2 (100V) (Tc = 25° unless otherwise noted -
OCR Scan

S 170 MOSFET TRANSISTOR

Abstract: 600v 20a IGBT MOSFET · < 250V MOSFET IGBT 600V IGBT · > 1000V IGBT MOSFET RDS-ON 1000V MOSFET RDS-ON IGBT · 250V 1000V MOSFET IGBT IGBT MOSFET · 80% 500V MOSFET 400V , . DS00898A_CN 11 AN898 MOSFET MOSFET 1.5A 3.0A 6.0A 600 IGBTMOSFET100 , AN898 MOSFET Jamie Dunn Microchip Technology Inc. MOSFET MOSFET MOSFET MOSFET Insulated Gate Bipolar Transistor IGBT MOSFET MOSFET MOSFET IGBT 1 5
Microchip Technology
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S 170 MOSFET TRANSISTOR 600v 20a IGBT igbt 400V 20A igbt 500V 15A mosfet 600V 20A IGBT Designers Manual

MOSFET 1000v 30a

Abstract: SCHEMATIC POWER AUDIO MOSFET OM6034NM OM6035NM OM6036NM OM6037NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFET In A Surface Mount Package FEATURES · · · · · · Surface Mount Hermetic Package High Current/Low RDS(on) Fast Switching, Low Drive Current Ease Of Paralleling For Added , OM6034NM OM6035NM OM6036NM OM6037NM VDS 100V 200V 500V 1000V RDS(on) .065 .095 0.4 3 ID 35A 30A 15A 5A , hermetic surface mount product features the latest advanced MOSFET and packaging technology. They are
Omnirel
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SCHEMATIC POWER AUDIO MOSFET MOSFET 1000V audio power mosfet MIL-S-19500
Abstract: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES â'¢ â'¢ â'¢ â'¢ â'¢ MOSFET And Common Cathode Rectifier In One Package Isolated High Density , RATINGS @25°C Rectifier MOSFET PIV Vp .065Q Id 30A 100V 1.1V lo 10A 50nsec , %. H ns nC MOSFET ELECTRICAL CHARACTERISTICS: QM9030SP1 (1000V) (Tc = 25° unless otherwise -
OCR Scan

POWER MOSFET Rise Time 1000V NS

Abstract: MOSFET 1000v 30a OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES â'¢ MOSFET And Common Cathode Rectifier In One Package â'¢ Isolated High Density Package â'¢ Fast Switching â'¢ Low RDS(on) MOSFET â'¢ High Current DESCRIPTION This series of Industrial products feature , NUMBER MOSFET Rectifier vDS ^DS(on) 'd PIV Vp lo trr OM9027SP1 100V 065Q 30A 100 V 1.1V 10A
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OCR Scan
inverter circuit 200v to 100v mosfet 10a 500v mosfet 400 V 10A 0M9028 100-TYP
Abstract: I ns ELECTRICAL CHARACTERISTICS: Per MOSFET OM6222SP1 (1000V) (Tc = 25° unless otherw ise noted , POWER PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFETs With Low RDS(on) Characteristics , the latest advanced MOSFET and packaging technology. They are ideally suited where small size, high , m o s f e t ) PART n u m b e r VD S OM6219SP1 100V RoS(on) .065Q Id 30A OM6220SP1 200V 0.1Q 25A OM6221SP1 500V 0.4Q 12A OM6222SP1 1000V 3Q 4A -
OCR Scan
OM622QSP1 OM6221 OM6222 534-5776FAX

1000V P-channel MOSFET

Abstract: p-channel 250V 30A power mosfet energy pulse circuits. MAXIMUM RATINGS (Per mosfet) PART NUMBER VDS RoS(on) ID OM6219SP1 100V .065£2 30A OM6220SP1 200V 0.1Q 25A OM6221SP1 500V 0.4Q 12A OM6222SP1 1000V 3Q 4A SCHEMATIC PIN , /js, Duty Cycle < 2%. 'S1 IMI ELECTRICAL CHARACTERISTICS: Per MOSFET OM6222SP1 (1000V) (Tc = 25 , POWER PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFETs With Low RDS(0n) Characteristics , This series of Industrial products feature the latest advanced MOSFET and packaging technology. They
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OCR Scan
1MI100 0001D OM6219 OM6220
Abstract: OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain â'" Source , IGSS VGS = ±20V VDS = 0 100 nA IDSS VDS = 1000V VGS = 0 VDS = 1000V VGS = 0 TJ = , VDS = 15V VDS(on) ID = 3.0A VGS = 10V ID = 1.5A VGS = 10V TJ = 125ºC Output Capacitance , Characteristics Forward On Voltage IS = 3.0A VGS = 0 IS = 3.0A VGS = 0 TJ = 125°C Reverse Recovery Time ID = 3.0A, VDD = 400V, VGS = 10V Switching Characteristics 104 ns tb 511 ns 2.92 Semiconductor Technology
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MTP3N100E

MOSFET 1000v 30a

Abstract: W210PIV400 MSSxx / MDSxx BTW68-xxx / BTW69-xxx Input Rect. Bridge - 600V/35A; 1000V/35A Input Rect. Bridge - 1200V/30A (3-ph.) Input Rect. Bridge - Thyristor-Diode Module Soft Start - Insulated Thyristor , Power Factor Controller 500/600V Mosfet TO220/Max220/TO247/Max247/ISOTOP 8A, 2x300V Hyperfast Diode , , low pwr. cons. Level Shifter 600V - current loop control Mosfet Driver 3 x 600mA Mosfet 500V Max220 , ISOTOP 2 x 30A / 2 x 60A Inverter STGW50N60* L6353/D BUT230V IGBT 50A, 600V - low Vcesat High
STMicroelectronics
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W210PIV-400 W210PIV400 mosfet 600V 100A MOSFET welding INVERTER welding inverter 100A UC3842 mosfet 600V 30A 1200v 30A to247 BF3506TV BTW68- BTW69- L4981A/B NB50/60 STTH806TTI
Abstract: < 2%. MOSFET ELECTRICAL CHARACTERISTICS: QM9030SP1 (1000V) (Tc = 25° unless otherwise noted , OM9Û27SP1 OM9()29SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30 A Power M O S F E T And High Spee d Rectifier In On e Package FEATURES · · · · · MOSFET And Common Cathode Rectifier In One Package Isolated High Density Package Fast Switching Low Rpsjon) MOSFET High Current DESCRIPTION This series of Industrial products feature the -
OCR Scan

FS-10 16A

Abstract: p-channel 250V 30A power mosfet OM6220SP1 OM6221SP1 OM6222SP1 (Per mosfet) VD s 100 V 200V 500V 1000V ^ D S (o n ) Id 30A , ELECTRICAL CHARACTERISTICS: Per MOSFET OM6222SP1 (1000V) (T c = 2 5 " unless otherw ise noted , POWER PACKAGE 100V Thru 1000V. Up To 30 Am p. N-Channel M OS FE Ts With L o w RDS(0n) C h a r a c t e r , Omnirel® B Omnirel® 2 .1 - 9 8 ELECTRICAL CHARACTERISTICS: Per MOSFET OM6219SP1 (100V) (T c = 2 5 ° , ) (VD S = 80V, lD = 30A, VG S = 10V) ·dlool t, Idfom t, 0. ns nC 45 (Typ) SOURCE-DRAIN DIODE
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OCR Scan
FS-10 16A

IRU1239SC

Abstract: iru1239 3 Phase Bridge in a MTP package with round 15 pins 3 1000V 100.000A MTK MODULES 3 1000V 100.000A , Diode in a D6120 8-SL package 45V 110A Schottky Common Cathode Diode in a D6120 8-SM package 3 1000V 3 Phase Bridge in a INT-A-Pak package 3 1000V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 Phase , Schottky Common Cathode Diode in a D6120 8-SM package 3 1000V 3 Phase Bridge in a INT-A-Pak package 3 1000V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3
Shenzhen Shouhe Technology
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IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 100MT160PAPBF 100MT160PA 100MT160PBPBF T85HFL60S05 T85HFL80S05 T90RIA10
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