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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: QFET ® FQA10N80C FQA10N80C 800V N-Channel MOSFET Features Description · · · · · · These , - °C/W - 40 °C/W www.fairchildsemi.com FQA10N80C FQA10N80C 800V N-Channel MOSFET , temperature FQA10N80C FQA10N80C Rev. A1 2 www.fairchildsemi.com FQA10N80C FQA10N80C 800V N-Channel MOSFET Package Marking and Ordering Information FQA10N80C FQA10N80C 800V N-Channel MOSFET Typical Performance , [V] 3 www.fairchildsemi.com FQA10N80C FQA10N80C 800V N-Channel MOSFET Typical Performance ... | Original |
9 pages, |
mosfet 10a 800v high power FQA10N80C F109 mosfet 10a 800v MOSFET 800V 10A FQA10N80C abstract |
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| Abstract: IR IGBT 1 MOSFET IGBT IR 2 IGBT GATE POLYSILICON , N- EPI N+ BUFFER LAYER P+ SUBSTRATE dv/dt COLLECTOR MOSFET (a) DEVICE STRUCTURE COLLECTOR C Qrr Trr G rb IGBT E EMITTER MOSFET (b) Device Symbol (c) EQUIVALENT CIRCUIT IGBT MOSFET 3 IGBT N PNP IRIGBT MOSFET MOSFET MOSFET IGBT 1 1 IGBT 2 P+ IGBT MOSFET N+ ... | Original |
12 pages, |
mosfet 10a 600v MOSFET 800V 10A igbt rectifier circuit Igbt high voltage low current igbt to247 900v IGBT application notes mosfet ir 250 n MOSFET 150 N IRF igbt 100V 5A ir 944 IRF MOSFET 10A P IRF MOSFET driver AN-983AJ AN-983AJ abstract |
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| Abstract: MOSFET Reverse Recovery Time Qrr Test Conditions IS =10A, VGS =0V - - 10 - - , PROVISIONAL WFW10N80 WFW10N80 Wisdom Semiconductor N-Channel MOSFET Features RDS(on) (Max 1.05 , 3. Source General Description TO-247 This Power MOSFET is produced using Wisdom's advanced , , referenced to 25 °C - 1.0 - V/°C IDSS VDS = 800V, VGS = 0V - - 10 uA , Time VDD =400V, ID =10A, RG =25 Rise Time Turn-off Delay Time (Note 4, 5) 50 - - ... | Original |
2 pages, |
WFW10N80 mosfet 10a 800v high power diode 10a 400v MOSFET 800V 10A mosfet 10a 800v WFW10N80 abstract |
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| Abstract: MOSFET MODULE SF100CB100 SF100CB100 UL;E76102 E76102 M SF100CB100 SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current. The mounting base of the module is , IDSS Zero Gate Voltage Drain Current VGS 0V VDS 800V DSS Darin-Source Breakdown Voltage , Forward Transconductance VDS 10A VD 75A Input Capacitance VGS 0V VDS 25V f 1.0MHz 16000 , IS 100A VGS 15V di/dt 400A/ s 1.8 V 300 ns MOSFET 0.16 Diode 0.64 /W 16 ... | Original |
3 pages, |
"MOSFET Module" "VDSS 800V" mosfet mosfet 100A mosfet 400a mosfet Vds 30 Vgs 25 SF100CB100 100A Mosfet MOSFET IGSS 100A MOSFET 20V 100A POWER MOSFET Rise Time 1000V NS mosfet vgs 5v N CHANNEL MOSFET 10A 1000V SF100CB100 abstract |
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| Abstract: QFET ® FQA10N80C FQA10N80C_F109 800V N-Channel MOSFET Features Description · · · · · · · , 10A, 800V, RDS(on) = 1.1 @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 15pF) Fast , www.fairchildsemi.com FQA10N80C FQA10N80C_F109 800V N-Channel MOSFET Package Marking and Ordering Information FQA10N80C FQA10N80C_F109 800V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics , MOSFET Typical Performance Characteristics (Continued) FQA10N80C FQA10N80C_F109 800V N-Channel MOSFET ... | Original |
8 pages, |
FQA10N80C F109 mosfet 10a 800v MOSFET 800V 10A FQA10N80C abstract |
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| Abstract: SBD . FRD (PN ) , SBD MOSFET . SBD PN . . . MOSFET 10A 200V . A . 3 , TO-220 MOSFET . , MOSFET . MOSFET - PN . (N MOSFET ). IGBT () PN . , 10A 0.182V 0.242V 0.305V 0.448V 0.659V R , 1mA VF 182 24.2 3 0.149 66m 31DQ04 31DQ04 (SBD) 125 IF 1mA 10mA 0.1A 3A 10A VF 0.0175 ... | Original |
26 pages, |
igbt spice mosfet 100a 200v NATIONAL IGBT 31DF2 mosfet 10a 600v 200v 3A schottky LM317 spice MOSFET 800V 10A MOSFET 800V 3A mosfet 60a 200v smd diode 101a 60v 10KHz ir MOSFET IGBT 60A spice model datasheet abstract |
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| Abstract: SBD . FRD (PN ) , SBD MOSFET . SBD PN . . . MOSFET 10A 200V . A . 3 , TO-220 MOSFET . , MOSFET . MOSFET - PN . (N MOSFET ). IGBT () PN . , 10A 0.182V 0.242V 0.305V 0.448V 0.659V R , 1mA VF 182 24.2 3 0.149 66m 31DQ04 31DQ04 (SBD) 125 IF 1mA 10mA 0.1A 3A 10A VF 0.0175 ... | Original |
26 pages, |
10EDB20 31DQ04 diode 400V 1A SOD-123 FCU10A30 31DF2 7 31DF2 LM317 spice model MOSFET 400V TO-220 5a200v 3A 300V Schottky Diode 60v 10KHz ir MOSFET NATIONAL IGBT LM317 spice IGBT 60A spice model datasheet abstract |
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| Abstract: , IDS= 10A, TJ = 25ºC VDS= 20V, IDS= 10A, TJ = 150ºC fig. 3 VDS = 800V fig. 5 f = 1MHz , , IF=5A, TJ = 25ºC VGS = -2V, IF=5A, TJ = 25ºC VGS = -5V, IF=10A, TJ = 25ºC VR = 800V, diF/dt= 100A/s , CPMF-1200-S160B CPMF-1200-S160B Rev. A nC Test Conditions VDD = 800V ID =10A VGS = -2/20V -2/20V Per JEDEC24-2 JEDEC24-2 Note fig.8 , ID= 10A 100 VGS= -2/20V -2/20V RG= 11.8 Total VDD= 800V ID= 10A 50 0 0 2 4 6 8 , ) VGS (V) VGS(V) 15 10 5 ID=10A 0 -5 VDD=800V EON E O FF 150 100 50 0 ... | Original |
10 pages, |
423F Cree SiC MOSFET DMOS SiC mosfet 10a 800v high power MOSFET 800V 10A mosfet 10a 800v CPMF-1200-S160B Cree SiC diode die DMOSFET bare Die mosfet CPMF-1200-S160B abstract |
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| Abstract: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 m Z-FETTM MOSFET Rev. CMF20120D CMF20120D N-Channel , Power MOSFET Z-FETTM MOSFET VDS RDS(on) N-Channel Enhancement Mode = 1200 V = 80 m ID(MAX , 3 CMF20120D CMF20120D Rev. - Applications Information The Cree SiC MOSFET has removed the upper , addressed to get maximum benefit from the SiC MOSFET. In general, although the SiC MOSFET is a superior , the SiC MOSFET is considerably lower. In fact, the product of gate voltage swing and gate charge for ... | Original |
13 pages, |
SiC MOSFET CMF20120D Cree SiC MOSFET defibrillator DMOS SiC 6N137 JEDEC24 mosfet 10a 800v mosfet 10a 800v high power RB160M-60 IXDI414 cmf20120 mosfet 1200V CMF20120D abstract |
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| Abstract: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 m Z-FeTTM MOSFET Rev. A CMF20120D CMF20120D , CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS(on) N-Channel Enhancement Mode = , 3 CMF20120D CMF20120D Rev. A Applications Information The Cree SiC MOSFET has removed the upper , addressed to get maximum benefit from the SiC MOSFET. In general, although the SiC MOSFET is a superior , the SiC MOSFET is considerably lower. In fact, the product of gate voltage swing and gate charge for ... | Original |
13 pages, |
RB160M-60 MOSFET 800V 10A IXDI414 electronic transformer halogen 12v DMOS SiC Cree SiC MOSFET CMF20120D 6N137 datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| ST | N-CHANNEL 800V 0.65 OHM - 10A - MAX220 MAX220 MAX220 MAX220 POWERMESH MOSFET Datasheet N-CHANNEL 800V 0.65 OHM - 10A - MAX220 MAX220 MAX220 MAX220 POWERMESH MOSFET STU10NB80 STU10NB80 STU10NB80 STU10NB80 Document Format Size Document Number Date Update Pages Portable Document Format 6578 15/04/1999 5 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/6578.htm |
STMicroelectronics | 20/10/2000 | 2.87 Kb | HTM | 6578.htm |
| ST | N-CHANNEL 800V 0.65 OHM - 10A - MAX220 MAX220 MAX220 MAX220 POWERMESH MOSFET Datasheet N-CHANNEL 800V 0.65 OHM - 10A - MAX220 MAX220 MAX220 MAX220 POWERMESH MOSFET STU10NB80 STU10NB80 STU10NB80 STU10NB80 Document Format Size Document Number Date Update Pages Portable Document Format 6578 15/04/1999 5 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/6578-v1.htm |
STMicroelectronics | 25/05/2000 | 2.82 Kb | HTM | 6578-v1.htm |
| ST | N-CHANNEL 800V 0.65 OHM - 10A - MAX220 MAX220 MAX220 MAX220 POWERMESH MOSFET STU10NB80 STU10NB80 STU10NB80 STU10NB80 N-CHANNEL 800V 0.65 OHM - 10A - MAX220 MAX220 MAX220 MAX220 POWERMESH MOSFET Document Number: 6578 Date Update: 15/04/99 Pages: 5 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/6578-v2.htm |
STMicroelectronics | 14/06/1999 | 0.89 Kb | HTM | 6578-v2.htm |
| -CHANNEL 800V - 4.6 OMH - 2.6A - TO-220/TO-220FP POWERMESH MOSFET 9 629 Datasheets STB4NB80 STB4NB80 STB4NB80 STB4NB80 N-CHANNEL 800V - 3 OHM - 4A - TO-220/TO-220FP POWERMESH MOSFET 8 629 Datasheets STP4NB80 STP4NB80 STP4NB80 STP4NB80 STP4NB80FP STP4NB80FP STP4NB80FP STP4NB80FP N-CHANNEL 800V - 3 OHM - 4A - TO-220/TO-220FP POWERMESH MOSFET 9 MOSFET 7 629 Datasheets STN1NB80 STN1NB80 STN1NB80 STN1NB80 N-CHANNEL 800V - 16 OHM - 0.2A - SOT-223 POWERMESH MOSFET 7 629 Datasheets STW8NB80 STW8NB80 STW8NB80 STW8NB80 N-CHANNEL 800V - 1.2 OHM - 7A - TO-247 www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/256.htm |
STMicroelectronics | 31/03/1999 | 15.19 Kb | HTM | 256.htm |
| ST | N-CHANNEL 800V 0.65 OHM - 10A - MAX220 MAX220 MAX220 MAX220 POWERMESH MOSFET Datasheet N-CHANNEL 800V 0.65 OHM - 10A - MAX220 MAX220 MAX220 MAX220 POWERMESH MOSFET STU10NB80 STU10NB80 STU10NB80 STU10NB80 STU10NB80 STU10NB80 STU10NB80 STU10NB80 N - CHANNEL 800V - 0.65 W - 10A - Max220 PowerMESH ] MOSFET PRELIMINARY DATA n V (BR)DSS , Tj 3 T JMAX TYPE V DSS R DS(on) I D STU10NB80 STU10NB80 STU10NB80 STU10NB80 800 V < 0.8 W 10 A 1 Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 800 V V DGR Drain- gate Voltage www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6578.htm |
STMicroelectronics | 20/10/2000 | 9.19 Kb | HTM | 6578.htm |
| ST | N-CHANNEL 800V 0.65 OHM - 10A - MAX220 MAX220 MAX220 MAX220 POWERMESH MOSFET Datasheet N-CHANNEL 800V 0.65 OHM - 10A - MAX220 MAX220 MAX220 MAX220 POWERMESH MOSFET STU10 STU10 STU10 STU10 /04/1999 5 Raw Text Format STU10NB80 STU10NB80 STU10NB80 STU10NB80 N - CHANNEL 800V - 0.65 W - 10A - Max220 PowerMESH ] MOSFET PRELIMINARY DATA n TYPICAL R DS(on) = 0 V V DGR Drain- gate Voltage (R GS = 20 k W ) 800 V V GS Gate-source Voltage www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6578-v1.htm |
STMicroelectronics | 25/05/2000 | 8.63 Kb | HTM | 6578-v1.htm |
| ST | N-CHANNEL 800V 0.65 OHM - 10A - MAX220 MAX220 MAX220 MAX220 POWERMESH MOSFET STU10NB80 STU10NB80 STU10NB80 STU10NB80 N-CHANNEL 800V 0.65 OHM - 10A - MAX220 MAX220 MAX220 MAX220 POWERMESH MOSFET Document Number: 6578 Date Update: 15 and Raw Text Format STU10NB80 STU10NB80 STU10NB80 STU10NB80 N - CHANNEL 800V - 0.65 W - 10A - Max220 PowerMESH ] MOSFET )DSS , Tj 3 T JMAX TYPE V DSS R DS(on) I D STU10NB80 STU10NB80 STU10NB80 STU10NB80 800 V < 0.8 W 10 A 1/5 THERMAL DATA R thj GS = 0) 800 V V DGR Drain- gate Voltage (R GS = 20 k W ) 800 V V GS Gate-source Voltage + 30 V I D www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6578-v2.htm |
STMicroelectronics | 14/06/1999 | 6.78 Kb | HTM | 6578-v2.htm |
| -CHANNEL 800V - 16 OHM - 1A - IPAK POWERMESH MOSFET 7 904 Datasheets STH15NA50FI STH15NA50FI STH15NA50FI STH15NA50FI STW15NA50 STW15NA50 STW15NA50 STW15NA50 Datasheets STW10NB60 STW10NB60 STW10NB60 STW10NB60 N-CHANNEL 600V - 0.69 OHM - 10A - TO-247 POWERMESH MOSFET 8 809 Datasheets STP3NB80 STP3NB80 STP3NB80 STP3NB80 STP3NB80FP STP3NB80FP STP3NB80FP STP3NB80FP N-CHANNEL 800V - 4.6 OMH - 2.6A - TO-220/TO-220FP POWERMESH MOSFET POWERMESH MOSFET 8 809 Datasheets STP4NB80 STP4NB80 STP4NB80 STP4NB80 STP4NB80FP STP4NB80FP STP4NB80FP STP4NB80FP N-CHANNEL 800V - 3 OHM - 4A -CHANNEL 800V - 1.6 OHM - 6.5A - TO-247 POWERMESH MOSFET 7 809 Datasheets STW8NB80 STW8NB80 STW8NB80 STW8NB80 N www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/257.htm |
STMicroelectronics | 31/03/1999 | 25.75 Kb | HTM | 257.htm |
| ST | N-CHANNEL 800V - 0.65 OHM - 11A - TO-247 POWERMESH MOSFET Datasheet N-CHANNEL 800V - 0.65 OHM - 11A - TO-247 POWERMESH MOSFET STW /07/1999 8 Raw Text Format STW11NB80 STW11NB80 STW11NB80 STW11NB80 N-CHANNEL 800V - 0 Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 800 V V DGR Drain- gate Voltage (R GS = 20 k W ) 800 V V GS Gate-source Voltage + 30 V I D Drain Current www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6750-v1.htm |
STMicroelectronics | 25/05/2000 | 9.17 Kb | HTM | 6750-v1.htm |
| ST | N-CHANNEL 800V - 0.65 OHM - 11A - TO-247 POWERMESH MOSFET Datasheet N-CHANNEL 800V - 0.65 OHM - 11A - TO-247 POWERMESH MOSFET STW11NB80 STW11NB80 STW11NB80 STW11NB80 STW11NB80 STW11NB80 STW11NB80 STW11NB80 N-CHANNEL 800V - 0.65 W - 11A - T0-247 T0-247 T0-247 T0-247 PowerMESH ] MOSFET n TYPICAL R DS(on) = 0 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 800 V V DGR Drain- gate Voltage (R GS = 20 k W ) 800 V V GS Gate-source Voltage + 30 V I D Drain www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6750.htm |
STMicroelectronics | 20/10/2000 | 9.75 Kb | HTM | 6750.htm |