500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
TPS1110Y Texas Instruments 6A, 7V, 0.065ohm, P-CHANNEL, Si, POWER, MOSFET visit Texas Instruments
ISL6615IRZ Intersil Corporation High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features; DFN10; Temp Range: See Datasheet visit Intersil Buy
ISL6615IRZ-T Intersil Corporation High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features; DFN10; Temp Range: See Datasheet visit Intersil Buy
ISL6615CRZ Intersil Corporation High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features; DFN10; Temp Range: See Datasheet visit Intersil Buy
ISL6615CRZ-T Intersil Corporation High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features; DFN10; Temp Range: See Datasheet visit Intersil Buy
UC2710J Texas Instruments 6A BUF OR INV BASED MOSFET DRIVER, CDIP8, CERAMIC, DIP-8 visit Texas Instruments

MOSFET 6A

Catalog Datasheet MFG & Type PDF Document Tags

Power MOSFET p-Channel n-channel dual

Abstract: 2A 12v nChannel mosfet , N-Channel, Logic Level UltraFET Power MOSFET. 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET. 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET. 4.7A, 30V, 0.031 Ohm, N-Channel , N-Channel, Logic Level Power MOSFET. 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET. 3A, 55V, 0.070 Ohm, N-Channel
-
OCR Scan
Abstract: UNISONIC TECHNOLOGIES CO., LTD UF6N15 Preliminary Power MOSFET 6A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF6N15 is an N-channel enhancement mode Power MOSFET using UTCâ'™ s , switching performance. FEATURES * 6A, 150V, RDS(ON) , Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source , Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6A DYNAMIC PARAMETERS Input Capacitance CISS Output Unisonic Technologies
Original
UF6N15L-AA3-R UF6N15G-AA3-R QW-R502-759

6n50

Abstract: UNISONIC TECHNOLOGIES CO., LTD 6N50 Preliminary Power MOSFET 6A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220 The UTC 6N50 is an N-channel mode power MOSFET using UTC's advanced technology to , -220F FEATURES * VDS = 500V * ID = 6A * RDS(ON)=1.15 @ VGS=10V * High Switching Speed * 100% Avalanche Tested , SYMBOL VDSS VGSS ID IDM IAR EAS EAR dv/dt Power MOSFET UNIT V V A A A mJ mJ V/ns W W/°C °C °C damaged , temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. L =13mH, IAS = 6A
Unisonic Technologies
Original
6n50 6N50L-TA3-T 6N50G-TA3-T 6N50L-TF3-T 6N50G-TF3-T QW-R502-526

6n80

Abstract: UNISONIC TECHNOLOGIES CO., LTD 6N80 Preliminary Power MOSFET 6A, 800V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220 The UTC 6N80 is a N-channel mode power MOSFET using UTC's advanced technology to , Unisonic Technologies Co., Ltd 1 of 6 QW-R502-500.b 6N80 Preliminary Power MOSFET , maximum junction temperature 2. L = 37mH, IAS = 6A, VDD = 50V, RG = 25, Starting TJ = 25°C 3. ISD 5.5A , Current Gate- Source Leakage Current Forward Reverse Preliminary Power MOSFET ELECTRICAL
Unisonic Technologies
Original
6n80 6N80L-TA3-T 6N80G-TA3-T 6N80L-TF3-T 6N80G-TF3-T 6N80L-TF1-T 6N80G-TF1-T
Abstract: UNISONIC TECHNOLOGIES CO., LTD Preliminary 6N40K-TA Power MOSFET 6A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N40K-TA is an N-Channel enhancement mode power MOSFET using UTCâ , Unisonic Technologies Co., Ltd 1 of 6 QW-R205-052.a 6N40K-TA  Preliminary Power MOSFET , maximum junction temperature 3. L=13.5mH, IAS=6A, VDD= 50V, RG=25â"¦, Starting TJ=25°C 4. ISD ≤6A, di , Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF Unisonic Technologies
Original
6N40KL-TA3-T 6N40KG-TA3-T 6N40KL-TF1-T 6N40KG-TF1-T
Abstract: UNISONIC TECHNOLOGIES CO., LTD UF6N15Z Power MOSFET 6A, 150V N-CHANNEL POWER MOSFET  DESCRIPTION 1 The UTC UF6N15Z is an N-channel enhancement mode Power MOSFET using UTCâ'™ s advanced , performance.  SOT-223 FEATURES * R DS(ON) , Unisonic Technologies Co., Ltd 1 of 3 QW-R502-759.B UF6N15Z  Power MOSFET ABSOLUTE MAXIMUM , On-State Resistance R DS(ON) V GS =10V, I D =6A DYNAMIC PARAMETERS Input Capacitance C ISS Output Unisonic Technologies
Original
UF6N15ZL-AA3-R UF6N15ZG-AA3-R

AN2033

Abstract: MOSFET 6A ZL2106 4.5V 14V 0.54V 5.5V rDS(ON) MOSFET 6A PMBusTM Zillker Labs Digital-DC MOSFET 6A ±1 SnapshotTM I2C/SMBus , ) MOSFET 6A PWM , Intersil Americas Inc. 2009, 2010. All Rights Reserved ZL2106 6A Digital-DC DC/DC , . I2 I2C/SMBus I2C/SMBus 2. 12V 3.3V/6A SS 5ms SS 5ms
Intersil
Original
ZL2106EVAL1Z AN2010 AN2033 AN2035 FN6852 MOSFET 6A ZL2106ALCN ZL2106ALCNT ZL2106ALCNTK AN1468

6n40

Abstract: UNISONIC TECHNOLOGIES CO., LTD 6N40 Preliminary Power MOSFET 6A, 400V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-252 The UTC 6N40 is an N-Channel enhancement mode power MOSFET using UTC's perfect planar , efficiency switched mode power supplies. 1 TO-220 FEATURES 1 * ID= 6A * VDS=400V * RDS(ON , © 2011 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-487.c 6N40 Preliminary Power MOSFET , implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L=13.7mH, IAS=6A
Unisonic Technologies
Original
6n40 6N40L-TA3-T 6N40G-TA3-T 6N40L-TF3-T 6N40G-TF3-T 6N40L-TN3-R 6N40G-TN3-R
Abstract: UNISONIC TECHNOLOGIES CO., LTD 6N40 Preliminary Power MOSFET 6A, 400V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 6N40 is an N-Channel enhancement mode power MOSFET using UTCâ'™s , QW-R502-487.d 6N40 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless , =5.5A, VDD= 50V, RG=25â"¦, Starting TJ=25°C 4. ISD ≤6A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ , °C/W 2 of 6 QW-R502-487.d 6N40 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS Unisonic Technologies
Original
Abstract: UNISONIC TECHNOLOGIES CO., LTD Preliminary UD4840-H Power MOSFET 6A, 40V DUAL N-CHANNEL , switch or in PWM applications.  FEATURES * RDS(ON)< 32 mâ"¦ @ VGS=10V, ID=6A RDS(ON)< 42 mâ , ® Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER , ® Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF , =0V VDS=VGS, ID=250µA VDS=5V, VGS=10V VGS=10V, ID=6A VGS=10V, ID=6A, TJ=125°C VGS=4.5V, ID=5A VDS Unisonic Technologies
Original
UT4810DG-S08-R QW-R211-025 UT4435-H
Abstract: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTC606P-H Power MOSFET -6A, -12V, P-CHANNEL 1.8V TRENCH MOSFET  DESCRIPTION The UTC UTC606P-H is a P-channel MOSFET, it uses UTCâ'™s advanced , 1 2 3 SOT-26 FEATURES * RDS(ON) < 26mâ"¦ @ VGS= -4.5V, ID= -6A RDS(ON) < 35mâ"¦ @ VGS , ® Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) PARAMETER SYMBOL , -100 -0.4 -0.5 ID=-250µA, Referenced to 25°C VGS=-4.5V, ID=-6A VGS=-2.5V, ID=-5A VGS Unisonic Technologies
Original
UTC606PG-AG6-R QW-R502-B34
Abstract: UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET 6A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6NM80 is a N-channel mode power MOSFET using UTCâ'™s advanced , QW-R209-070.a 6NM80  Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless , ® Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER , Reverse Recovery Time trr 615 nS VGS = 0V, IS = 6A, dIF / dt =100A/μs (Note 1) Reverse Recovery Unisonic Technologies
Original
6NM80L-TN3-R 6NM80G-TN3-R
Abstract: ICE6N70 Product Summary ID V(BR)DSS rDS(ON) Qg N-Channel Enhancement Mode MOSFET 6A , by Tjmax MOSFET dv/dt Ruggedness 50 V/ns ID ID, pulse dv/dt Parameter VGS Ptot , to +150 °C 60 Operating and Storage Temperature Parameter VDS = 480V, ID = 6A, Tj = , * RDS, ID = 3A nS VDS = 480V, VGS = 10V, ID = 6A, RG = 4â"¦ (External) Gate Charge , VDS = 480V, ID = 6A, VGS = 0 to 10V Reverse Diode VSD Diode Forward Voltage - 1.0 1.2 Micross Components
Original
E6N70 0E-06 0E-05 0E-04 0E-03 0E-02
Abstract: ICE6N73 Product Summary ID V(BR)DSS rDS(ON) Qg N-Channel Enhancement Mode MOSFET 6A , by Tjmax MOSFET dv/dt Ruggedness 50 V/ns ID ID, pulse dv/dt Parameter VGS Ptot , to +150 °C 50 Operating and Storage Temperature Parameter VDS = 480V, ID = 6A, Tj = , * RDS, ID = 3A nS VDS = 380V, VGS = 10V, ID = 6A, RG = 4â"¦ (External) Gate Charge , VDS = 480V, ID = 6A, VGS = 0 to 10V Reverse Diode VSD Diode Forward Voltage - 1.0 1.2 Micross Components
Original
0E-01 0E-00

spartan 3a

Abstract: TB379 ISL65426 2007 2 21 FN640.2 MOSFET 6A ISL65426 2.375V 5.5V 1V 80 6A PWM 180 RMS ISL65426 1MHz 6 1A 4 4 PG1 PG2 ISL65426 IC ISL65426 QFN IO FPGA 95 1MHz 2.375V 5.5V ±1 - 2 VID - 0.6V 4.0V , PCB FB1FB2 VOUTGND LX1LX2LX3LX4LX5LX6 MOSFET EN POR0.6V EN1EN2 PWM10(A VCC1V , POR VCCPVINx VOUT2VCC 2.5V VCC2.9V 3.3V VCC POR4.3V PVINxPOR 7""MOSFET POR LX
Intersil
Original
ISL65426HRZ ISL65426IRZA spartan 3a TB379 EN2710 MBR0520 ISL65426IRZ STD-020 ISL6542 L65426ENEN1EN2VCCPVIN
Abstract: UNISONIC TECHNOLOGIES CO., LTD 6N65K-MT Power MOSFET 6A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N65K-MT is a high voltage power MOSFET designed to have better characteristics, such , characteristics. This power MOSFET is usually used in high speed switching applications of switching power , : Source  Power MOSFET Package TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO , www.unisonic.com.tw 2 of 7 QW-R502-A95.F 6N65K-MT  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 Unisonic Technologies
Original
6N65KL-TA3-T 6N65KG-TA3-T 6N65KL-TF3-T 6N65KG-TF3-T 6N65KL-TF1-T 6N65KG-TF1-T
Abstract: ICE6N70FP Product Summary ID V(BR)DSS rDS(ON) Qg N-Channel Enhancement Mode MOSFET 6A , by Tjmax MOSFET dv/dt Ruggedness 50 V/ns ID ID, pulse dv/dt Parameter VGS Ptot , to +150 °C 50 Operating and Storage Temperature Parameter VDS = 480V, ID = 6A, Tj = , * RDS, ID = 3A nS VDS = 480V, VGS = 10V, ID = 6A, RG = 4â"¦ (External) Gate Charge , VDS = 480V, ID = 6A, VGS = 0 to 10V Reverse Diode VSD Diode Forward Voltage - 1.0 1.2 Micross Components
Original
Abstract: UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET 6A, 800V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 6NM80 is an Super Junction MOSFET Structure . It uses UTC , MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS , of 6 QW-R209-070.a 6NM80  Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC , Forward Current Reverse Recovery Time trr 615 nS VGS = 0V, IS = 6A, dIF / dt =100A/μs (Note 1 Unisonic Technologies
Original

an799

Abstract: mosfet 55 nf 06 TC4429 TC429 TC4420 18V 6A TC442918V65 nsec 10,000 pF TC4421 TC4422 9A MOSFET TC4420/29 6A MOSFET 6A TC1410N TC1411 N TC1412 N TC1413 N TC4420/29 TC4421/22 3 TC4426 , AN799 MOSFET MOSFET Jamie Dunn Microchip Technology Inc. 2. MOSFET 2 MOSFET MOSFET / MOSFET MOSFET MOSFET MOSFET MOSFET MOSFET MOSFET MOSFET MOSFET Microchip MOSFET MOSFET MOSFET MOSFET MOSFET MOSFET MOSFET MOSFET 1
Microchip Technology
Original
mosfet 55 nf 06 MOSFET 500V 15A an799 microchip 348 mosfet TC4431 application tc1426 DS00799B 500V14AN

6680a

Abstract: 6680aso-8 MOSFET shoot through MOSFET 6A IP-P=I·IOMAX 2 td1 P-MOSFET N-MOSFET td2 , MOSFET N MOSFET P MOSFET MOSFET shoot through P MOSFET SYNC/SLEEP 0.8V SYNC/SLEEP , 0.8V )/6A 1.6u M2 5 C7 C4 150u R5 22u C9 3.3n R7 4.64k R8 169 , PHASE MOSFET P-MOSFET PHASE PWM GND GND 68.75% PMOSFET SYNC/SLEEPSYNC/SLEEP N-MOSFET , SYNC/SLEEP 0.8V SC4602 10A MOSFET fs=300kHzTSOFT-START=720/300k=2.4ms fs
Semtech
Original
SC4602A SC4602BIMSTR 6680a 6680aso-8 6680as 9SC46 PMOSFET smt mosfet 6680a SC4602B C4602B
Showing first 20 results.